CN108807204B - Wafer flatness measuring device and wafer flatness measuring system - Google Patents
Wafer flatness measuring device and wafer flatness measuring system Download PDFInfo
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- CN108807204B CN108807204B CN201710312102.0A CN201710312102A CN108807204B CN 108807204 B CN108807204 B CN 108807204B CN 201710312102 A CN201710312102 A CN 201710312102A CN 108807204 B CN108807204 B CN 108807204B
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- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention provides a wafer flatness measuring device and a wafer flatness measuring system, wherein the wafer flatness measuring device comprises: the device comprises a measuring cavity, a gas inlet and a gas outlet, wherein the top of the measuring cavity is provided with the gas inlet, and the bottom of the measuring cavity is provided with the gas outlet; the gas inlet is communicated with a gas pipeline and is suitable for introducing dry gas into the measurement cavity; a super-planar mirror assembly located within the measurement chamber; the super plane mirror assembly comprises a pair of super plane mirrors which are arranged at intervals, and the distance between the two super plane mirrors is larger than the thickness of the wafer to be detected; at least the inner side surface of the super plane mirror is a super plane, and the super planes of the two super plane mirrors are parallel. In the wafer flatness measuring device, the drying gas is continuously introduced into the measuring cavity with the super-plane mirror, so that the super-plane mirror and the wafer to be measured in the measuring cavity are ensured to be in a dry state, and the adverse effect on measurement caused by condensation of condensed water on the super-plane surface of the super-plane mirror is effectively avoided.
Description
Technical Field
The invention belongs to the technical field of semiconductor equipment, and particularly relates to a wafer flatness measuring device and a wafer flatness measuring system.
Background
The flatness, warpage and nanotopography of the silicon substrate are the main parameters of the bare silicon wafer, since these parameters directly correspond to the yield of chips fabricated on the silicon wafer in the future. For example, poor flatness of bare silicon wafers can lead to focus blur on the lithographic support, resulting in exposure failures.
WS2+ (wafer sight2+) is an important tool that can measure parameters such as wafer flatness, warp and nanotopography simultaneously. The method mainly adopts the principle of light interference, namely, the optical path difference is adopted to calculate the performance of the surface of the wafer. The main structure of the device is shown in fig. 1, and the device mainly comprises a pair of super plane mirrors 10 which are arranged at intervals, wherein the inner side surfaces of the super plane mirrors 10 are super planes, that is, the adjacent surfaces of the two super plane mirrors 10 are super planes. During measurement, as shown in fig. 1, a wafer 11 to be measured is placed between two of the super-plane mirrors 10, and the surface of the wafer 11 to be measured is parallel to the super-plane of the super-plane mirror 10. In fig. 1, R1 is the light reflected by the hyperplane of the hyperplane mirror 10, R2 is the light reflected by the surface of the wafer 11 to be measured, and the distance between each point on the wafer 11 to be measured and the hyperplane of the hyperplane mirror 10 can be calculated by calculating the optical path difference between R1 and R2, that is, the surface profile of the wafer 10 to be measured can be obtained.
In the above measurement process, the hyperplane of the hyperplane mirror 10 is used as a reference plane, and the flatness thereof is directly related to the measurement accuracy. However, since the super-plane mirror 10 is made of glass, the super-plane mirror 10 may be deformed due to thermal expansion and contraction, and even a very small deformation may cause a change in the super-plane of the super-plane mirror 10 as a reference surface, thereby causing measurement inaccuracy. In addition, since the surface of the super-flat mirror 10 is prone to condensation, for example, when humidity in a semiconductor factory (fab) increases, as long as temperature is suitable, minute moisture is condensed on the super-flat surface of the super-flat mirror 10, and the refractive index of the condensed water is different from that of the glass super-flat mirror 10, which causes a change in the reference surface, and thus inaccurate measurement is performed.
At present, an effective reference plane monitoring means of the super-plane mirror only carries out continuous monitoring, namely a gold wafer (a wafer with a result obtained under a normal condition) is continuously detected, and once an actual measurement result deviates from an original vertical state, environment detection is carried out. However, this method is time and labor consuming, and only the hyperplane of the hyperplane mirror 10 can be detected and cannot be corrected.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a wafer flatness measuring apparatus and a wafer flatness measuring system, which are used to solve the problems of time and labor consumption of the reference plane monitoring means of the prior art, and that only the reference plane can be detected and cannot be corrected.
To achieve the above and other related objects, the present invention provides a wafer flatness measuring apparatus, comprising:
the device comprises a measuring cavity, a gas inlet and a gas outlet, wherein the top of the measuring cavity is provided with the gas inlet, and the bottom of the measuring cavity is provided with the gas outlet; the gas inlet is communicated with a gas pipeline and is suitable for introducing dry gas into the measurement cavity;
a super-planar mirror assembly located within the measurement chamber; the super plane mirror assembly comprises a pair of super plane mirrors which are arranged at intervals, and the distance between the two super plane mirrors is larger than the thickness of the wafer to be detected; at least the inner side surface of the super plane mirror is a super plane, and the super planes of the two super plane mirrors are parallel.
As a preferred scheme of the wafer flatness measuring device of the present invention, the number of the air inlets and the number of the air outlets are both one, and the air inlets and the air outlets are arranged in a vertically corresponding manner; the two super plane mirrors are respectively positioned at two sides of the air inlet and the air outlet.
In a preferred embodiment of the wafer flatness measuring apparatus according to the present invention, a vertical symmetry axis of the super-plane mirror assembly coincides with a central axis of the gas inlet and a vertical central axis of the gas outlet.
As a preferred scheme of the wafer flatness measuring device of the present invention, the number of the air inlets and the number of the air outlets are two, and the air inlets and the air outlets are arranged in a one-to-one correspondence manner; the two super plane mirrors are respectively positioned at the outer sides of the two air inlets.
As a preferable mode of the wafer flatness measuring apparatus according to the present invention, the distances from the inner sides of the two hyper-flat mirrors to the vertical central axes of the gas inlets adjacent thereto are equal.
As a preferable scheme of the wafer flatness measuring device of the present invention, a distance between the two air inlets is greater than or equal to a thickness of the wafer to be detected.
As a preferable aspect of the wafer flatness measuring apparatus according to the present invention, the super flat mirror is a glass super flat mirror.
As a preferable scheme of the wafer flatness measuring apparatus of the present invention, the wafer flatness measuring apparatus further includes a temperature control device, the temperature control device is located at the gas inlet and is adapted to control the temperature of the dry gas introduced into the measurement chamber, so as to ensure that the temperature of the dry gas introduced into the measurement chamber is kept constant.
The invention also provides a wafer flatness measuring system, which comprises:
a drying gas source adapted to provide a drying gas;
at least two stages of wafer flatness measuring devices as described in any of the previous solutions; wherein, the gas inlet of the first-stage wafer flatness measuring device is communicated with the dry gas source through the gas pipeline; and the air inlets of the wafer flatness measuring devices of other stages are communicated with the air outlet of the wafer flatness measuring device positioned at the previous stage, and the air outlet is communicated with the air inlet of the wafer flatness measuring device positioned at the next stage.
As a preferable scheme of the vertical wafer flatness measuring system of the present invention, the wafer flatness measuring system further includes a drying device, and the drying device is disposed on the gas pipeline between the drying gas source and the first-stage wafer flatness measuring device, and is adapted to further perform a drying process on the drying gas provided by the drying gas source.
As described above, the wafer flatness measuring apparatus and the wafer flatness measuring system according to the present invention have the following advantageous effects: in the wafer flatness measuring device, the drying gas is continuously introduced into the measuring cavity with the super-plane mirror, so that the super-plane mirror and a wafer to be measured in the measuring cavity are ensured to be in a dry state, and the adverse effect on measurement caused by condensation of condensed water on the super-plane surface of the super-plane mirror is effectively avoided; meanwhile, the temperature control device is arranged at the air inlet, so that the drying gas introduced into the measuring cavity can be kept at a constant temperature, the hyper-plane mirror and the wafer to be measured are both in a constant temperature environment, and the adverse effect on measurement caused by the change of the temperature of the external environment is effectively avoided.
Drawings
Fig. 1 is a schematic diagram showing the structure and testing principle of a super-flat mirror in the prior art.
Fig. 2 is a schematic structural diagram of a wafer flatness measuring apparatus according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a wafer flatness measuring apparatus according to a second embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a wafer flatness measuring system according to a third embodiment of the present invention.
Description of the element reference numerals
10 super plane mirror
101 hyperplane
11 wafer to be tested
20 measurement chamber
201 air intake hole
202 exhaust port
21 gas pipeline
22 super plane mirror
221 hyperplane
23 wafer to be tested
24 temperature control device
25 drying gas source
26 drying device
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 2 to 4. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 2, the present invention provides a wafer flatness measuring apparatus, which includes: the device comprises a measurement chamber 20, wherein the top of the measurement chamber 20 is provided with an air inlet 201, and the bottom of the measurement chamber 20 is provided with an air outlet 202; the gas inlet 201 is communicated with a gas pipeline (not shown) and is suitable for introducing dry gas into the measurement chamber 20; a hyper-planar mirror assembly located within the measurement chamber 20; the super-plane mirror assembly comprises a pair of super-plane mirrors 22 which are arranged at intervals, and the distance between the two super-plane mirrors 22 is larger than the thickness of a wafer 23 to be detected so as to ensure that the wafer 23 to be detected can be vertically placed between the two super-plane mirrors 22; at least the inner side surface of the super plane mirror 22 is a super plane 221, and the super planes 221 of the two super plane mirrors 22 are parallel. In the wafer flatness measuring device of the present invention, the gas inlet 201 is disposed at the top of the measuring chamber 20, and the gas outlet is disposed at the bottom of the measuring chamber 20, so that dry gas (CDA) can be continuously introduced into the measuring chamber 0 in which the super-flat mirror 22 is disposed through the gas inlet 201, and the super-flat mirror 22 and the wafer 23 to be measured disposed in the measuring chamber 20 can be ensured to be in a dry state, and moisture does not exist in the measuring chamber 20, thereby effectively avoiding adverse effects on measurement caused by condensation of condensed water on the surface of the super-flat 221 of the super-flat mirror 22, and ensuring accuracy of measurement.
The term "inside of the super-mirror 22" as used herein refers to a side adjacent to the wafer 23 to be measured.
In this example, the number of the air inlets 201 and the number of the air outlets 202 are both one, and the air inlets 201 and the air outlets 202 may be arranged in a vertically corresponding manner or in a vertically staggered manner; preferably, in this embodiment, the air inlet 201 and the air outlet 202 are disposed in an up-down corresponding manner; the two hyper-mirrors 22 are respectively located at two sides of the air inlet 200 and the air outlet 202.
As an example, a vertical symmetry axis of the hyper-plane mirror assembly coincides with a central axis of the air inlet 201 and a vertical central axis of the air outlet 202, that is, a symmetry axis of the hyper-plane mirror assembly parallel to the hyper-plane 221 coincides with a central axis of the air inlet 201 and a vertical central axis of the air outlet 202. When the wafer 23 to be measured is measured, the wafer 23 to be measured is located between the two super-flat mirrors 22, and the distance from the surface of the wafer 23 to be measured to the super-flat plane 221 adjacent to the surface is equal, the dry gas introduced into the measurement chamber 20 through the gas inlet 201 is divided into two paths by the wafer 23 to be measured, flows through the gaps between the wafer 23 to be measured and the super-flat mirrors 22 on the two sides of the wafer to be measured, and is discharged through the gas outlet 202, wherein a white arrow in fig. 2 is a flow path of the dry gas.
The super-flat mirror 22 may be a glass super-flat mirror as an example, but in other examples, the flat mirror 22 may be a super-flat mirror made of any transparent material, such as transparent ceramic, transparent crystal, and so on.
As an example, the wafer flatness measuring apparatus further includes a temperature control device 24, where the temperature control device 24 is located at the gas inlet 201, and specifically, the temperature control device 24 is located around the periphery of the gas inlet 201. The temperature control device 24 is adapted to control the temperature of the drying gas introduced into the measurement chamber 20 to ensure that the drying gas introduced into the measurement chamber 20 is maintained at a constant temperature. Through the air inlet 201 is provided with the temperature control device 24, the drying gas introduced into the measuring chamber 20 can be ensured to be kept at a constant temperature, so that the hyper-flat mirror 22 and the wafer 23 to be measured are both in a constant temperature environment, and the hyper-flat mirror 22 cannot generate surface deformation, thereby effectively avoiding adverse effects on measurement caused by the temperature change of the external environment.
As an example, the temperature control device 24 may include a temperature detection device (not shown) and a thermostatic control device (not shown), and the temperature detection device may be inserted into the gas inlet 201 at one end to accurately detect the temperature of the drying gas flowing through the gas inlet 201; thermostatic control device with temperature detection device is connected, is suitable for the basis the result convection current that temperature detection device listened carries out thermostatic control to the temperature of the dry gas of air inlet 201, when flowing through the temperature of the dry gas of air inlet 201 is less than required constant temperature, thermostatic control device does dry gas heats, when flowing through when the temperature of the dry gas of air inlet 201 is higher than required constant temperature, thermostatic control device does dry gas carries out cooling treatment. The temperature of the drying gas introduced into the measurement chamber 20 may be controlled to 20 ℃, but may be controlled to other desired temperatures in other examples, which is not limited herein.
Example two
Referring to fig. 3, the present embodiment further provides a wafer flatness measuring apparatus, and the specific structure of the wafer flatness measuring apparatus in the present embodiment is substantially the same as that of the wafer flatness measuring apparatus in the first embodiment, and the difference between the two embodiments is: in the first embodiment, the number of the gas inlets 201 at the top of the measurement chamber 20 and the number of the gas outlets 202 at the bottom of the measurement chamber 20 are both one; in this embodiment, the number of the gas inlets 201 at the top of the measurement chamber 20 and the number of the gas outlets 202 at the bottom of the measurement chamber 20 are two.
As an example, the air inlets 201 and the air outlets 202 may be arranged in a one-to-one up-down correspondence, or in an up-down staggered arrangement, preferably, in this embodiment, the air inlets 201 and the air outlets 202 are arranged in a one-to-one up-down correspondence; the two hyper-flat mirrors 22 are respectively located outside the two air inlets 201.
As an example, the distance from the inner side of two super-flat mirrors 22 to the vertical central axis of the air inlet 201 adjacent to the super-flat mirrors is equal.
As an example, the distance between the two air inlets 201 is greater than or equal to the thickness of the wafer 23 to be tested, so as to ensure that the wafer 23 to be tested can be placed between the two air inlets 201. When the wafer 23 to be measured is measured, as shown in fig. 3, the wafer 23 to be measured is located between the two hyper-mirrors 22 and between the two air inlets 201, and distances from the surface of the wafer 23 to be measured to vertical central axes of the air inlets 201 adjacent thereto are equal.
In this embodiment, the number of the gas inlets 201 and the number of the gas outlets 202 are two, and two paths of dry gas may be respectively supplied to the measurement chamber 20; as shown by the white arrows in fig. 3, the white arrows in fig. 3 are flow paths of the dry gas, and the two paths of dry gas introduced into the measurement chamber 20 are separated by the wafer 23 to be measured, so that the flow velocity of the dry gas in the measurement chamber 20 is stable, no turbulent flow exists, no adverse effect is caused on the passing of the measurement light, and the measurement accuracy is further ensured.
EXAMPLE III
Referring to fig. 4, the present embodiment further provides a wafer flatness measuring system, which includes: a drying gas source 25, said drying gas source 25 being adapted to provide a drying gas; at least two stages (i.e., two) of wafer flatness measuring devices as described in example two; wherein, the gas inlet 201 of the wafer flatness measuring device of the first stage is communicated with the dry gas source 25 via a gas pipeline 21; the gas inlet 201 of the wafer flatness measuring device of the other stage is communicated with the gas outlet 201 of the wafer flatness measuring device of the previous stage, and the gas outlet 202 of the wafer flatness measuring device of the stage is communicated with the gas inlet 201 of the wafer flatness measuring device of the next stage. At least two stages of the wafer flatness measuring devices are connected in series in sequence through the gas management 21, so that the use frequency of the drying gas is as large as possible, and the utilization rate of the drying gas is improved.
It should be noted that fig. 4 only exemplifies a wafer flatness measuring device including two stages as described in embodiment two, and the number of the wafer flatness measuring devices may be set according to actual needs, that is, two wafer flatness measuring devices may be as shown in fig. 4, and may also be three, four, five or even more wafer flatness measuring devices.
It should be further noted that, for convenience of illustrating the flow path of the drying gas (i.e. white arrows in fig. 4), the gas inlet 201 and the gas outlet 202 of each stage of the wafer flatness measuring apparatus are not shown with the connected gas pipeline where they are connected to the gas pipeline 21, but only the flow path of the drying gas is indicated by the white arrows, but it should be clear that the gas inlet 201 and the gas outlet 202 of each stage of the wafer flatness measuring apparatus are directly communicated with the gas pipeline 21.
In another example, the wafer flatness measuring apparatus in the wafer flatness measuring system may also be the wafer flatness measuring apparatus described in the first embodiment. In the case of the wafer flatness measuring apparatus according to the first embodiment, the wafer flatness measuring apparatuses are connected in sequence according to the connection method.
As an example, the wafer flatness measuring system further includes a drying device 26, and the drying device 26 is disposed on the gas pipeline 21 between the dry gas source 25 and the wafer flatness measuring device of the first stage, and is adapted to further dry the dry gas provided by the dry gas source 25.
In summary, the present invention provides a wafer flatness measuring apparatus and a wafer flatness measuring system, wherein the wafer flatness measuring apparatus includes: the device comprises a measuring cavity, a gas inlet and a gas outlet, wherein the top of the measuring cavity is provided with the gas inlet, and the bottom of the measuring cavity is provided with the gas outlet; the gas inlet is communicated with a gas pipeline and is suitable for introducing dry gas into the measurement cavity; a super-planar mirror assembly located within the measurement chamber; the super plane mirror assembly comprises a pair of super plane mirrors which are arranged at intervals, and the distance between the two super plane mirrors is larger than the thickness of the wafer to be detected; at least the inner side surface of the super plane mirror is a super plane, and the super planes of the two super plane mirrors are parallel. In the wafer flatness measuring device, the drying gas is continuously introduced into the measuring cavity with the super-plane mirror, so that the super-plane mirror and a wafer to be measured in the measuring cavity are ensured to be in a dry state, and the adverse effect on measurement caused by condensation of condensed water on the super-plane surface of the super-plane mirror is effectively avoided; meanwhile, the temperature control device is arranged at the air inlet, so that the drying gas introduced into the measuring cavity can be kept at a constant temperature, the hyper-plane mirror and the wafer to be measured are both in a constant temperature environment, and the adverse effect on measurement caused by the change of the temperature of the external environment is effectively avoided.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A wafer flatness measuring apparatus, comprising:
the device comprises a measuring cavity, a gas inlet and a gas outlet, wherein the top of the measuring cavity is provided with the gas inlet, and the bottom of the measuring cavity is provided with the gas outlet; the gas inlet is communicated with a gas pipeline and is suitable for introducing dry gas into the measurement cavity;
a super-planar mirror assembly located within the measurement chamber; the super plane mirror assembly comprises a pair of super plane mirrors which are arranged at intervals, and the distance between the two super plane mirrors is larger than the thickness of the wafer to be detected; at least the inner side surface of the super plane mirror is a super plane, and the super planes of the two super plane mirrors are parallel.
2. The wafer flatness measurement apparatus of claim 1, wherein: the number of the air inlets and the number of the air outlets are one, and the air inlets and the air outlets are arranged up and down correspondingly; the two super plane mirrors are respectively positioned at two sides of the air inlet and the air outlet.
3. The wafer flatness measuring apparatus according to claim 2, wherein: the vertical symmetry axis of the hyper-planar mirror assembly coincides with the central axis of the air inlet and the vertical central axis of the air outlet.
4. The wafer flatness measurement apparatus of claim 1, wherein: the number of the air inlets and the number of the air outlets are two, and the air inlets and the air outlets are arranged in a one-to-one up-and-down correspondence manner; the two super plane mirrors are respectively positioned at the outer sides of the two air inlets.
5. The wafer flatness measuring apparatus according to claim 4, wherein: the distance between the inner sides of the two hyper-flat mirrors and the vertical central axis of the air inlet adjacent to the hyper-flat mirrors is equal.
6. The wafer flatness measurement apparatus of claim 5, wherein: the distance between the two air inlets is larger than or equal to the thickness of the wafer to be detected.
7. The wafer flatness measurement apparatus of claim 1, wherein: the super plane mirror is a glass super plane mirror.
8. The wafer flatness measurement apparatus according to any one of claims 1 to 7, wherein: the wafer flatness measuring device further comprises a temperature control device, wherein the temperature control device is located at the air inlet and is suitable for controlling the temperature of the drying gas introduced into the measuring cavity so as to ensure that the drying gas introduced into the measuring cavity is kept at a constant temperature.
9. A wafer flatness measurement system, comprising:
a drying gas source adapted to provide a drying gas;
at least two stages of the wafer flatness measuring apparatus of any one of claims 1 to 8; wherein, the gas inlet of the first-stage wafer flatness measuring device is communicated with the dry gas source through the gas pipeline; and the air inlets of the wafer flatness measuring devices of other stages are communicated with the air outlet of the wafer flatness measuring device positioned at the previous stage, and the air outlet is communicated with the air inlet of the wafer flatness measuring device positioned at the next stage.
10. The wafer flatness measurement system of claim 9, wherein: the wafer flatness measuring system further comprises a drying device, wherein the drying device is arranged on the gas pipeline between the drying gas source and the first-stage wafer flatness measuring device and is suitable for further drying the drying gas provided by the drying gas source.
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| JP7143831B2 (en) * | 2019-10-11 | 2022-09-29 | 信越半導体株式会社 | Wafer shape measurement method |
| CN111192837B (en) * | 2020-01-03 | 2023-03-28 | 浙江百盛光电股份有限公司 | Method for testing warping degree of wafer |
| CN112904679B (en) * | 2021-01-26 | 2023-01-17 | 长鑫存储技术有限公司 | Method for determining focus boundary and judging whether wafer needs to be reworked |
| US11988612B2 (en) | 2021-01-26 | 2024-05-21 | Changxin Memory Technologies, Inc. | Methods for determining focus spot window and judging whether wafer needs to be reworked |
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| JP3770078B2 (en) * | 2000-11-29 | 2006-04-26 | セイコーエプソン株式会社 | Thin plate-like object to be measured and holding method, crystal plate cut surface inspection device and inspection method, thin plate-like object to be measured flatness measuring device and measuring method |
| CN101276151A (en) * | 2008-05-14 | 2008-10-01 | 上海微电子装备有限公司 | Method and apparatus for measuring wafer surface flatness |
| CN103017691A (en) * | 2012-11-30 | 2013-04-03 | 上海华力微电子有限公司 | Device and method for detecting flatness of silicon chip |
| CN104677315A (en) * | 2015-03-05 | 2015-06-03 | 上海光刻电子科技有限公司 | Measuring method of surface roughness of silicon wafers |
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| US20070148792A1 (en) * | 2005-12-27 | 2007-06-28 | Marx David S | Wafer measurement system and apparatus |
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| JP3770078B2 (en) * | 2000-11-29 | 2006-04-26 | セイコーエプソン株式会社 | Thin plate-like object to be measured and holding method, crystal plate cut surface inspection device and inspection method, thin plate-like object to be measured flatness measuring device and measuring method |
| CN101276151A (en) * | 2008-05-14 | 2008-10-01 | 上海微电子装备有限公司 | Method and apparatus for measuring wafer surface flatness |
| CN103017691A (en) * | 2012-11-30 | 2013-04-03 | 上海华力微电子有限公司 | Device and method for detecting flatness of silicon chip |
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