CN106206352B - A kind of micro-nano semiconductor light electrical characteristics three-dimensional detection system - Google Patents
A kind of micro-nano semiconductor light electrical characteristics three-dimensional detection system Download PDFInfo
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- CN106206352B CN106206352B CN201610712826.XA CN201610712826A CN106206352B CN 106206352 B CN106206352 B CN 106206352B CN 201610712826 A CN201610712826 A CN 201610712826A CN 106206352 B CN106206352 B CN 106206352B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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Abstract
A kind of micro-nano semiconductor light electrical characteristics three-dimensional detection system, micro-nano semiconductor light electrical characteristics three-dimensional detection system according to the present invention include: optical signal driving source/CCD microscope 1, for providing light stimulus input signal for wafer 4, and provide machine vision；IV/CV/ pulse/noise-measuring system 12, for providing pumping signal to wafer 4 and acquiring tested 4 output signal of wafer；Ultra-low temperature surroundings steam detects circulating dehumidification device 13, for detecting and reducing low moisture content；Big cross-layer temperature control equipment 14 provides wide temperature environment for tested wafer；Weak signal extraction unit 11, for measuring the small-signal of tested wafer output；Dual needle pressure detection device 3 and probe 2, for contacting wafer and being directed at position and contact surface；Chuck 5, for carrying tested wafer；Four axis move stage body 6, are used for XYZ axis linear movement and R axis moving in rotation；Closed shield camera bellows 7, for providing stable brightness, temperature and humidity test environment for tested wafer；Computer and Data Analysis Software 15 are controlled, for realizing the integrated coordinated control of system, is tested the processing and analysis of wafer detection data.Micro-nano semiconductor light electrical characteristics three-dimensional detection system according to the present invention can realize the semiconductor light electrical characteristics three dimensional detection automated under high-precision, highly reliable high/low temperature condition.
Description
Technical field
The present invention relates to semiconductors manufacture and testing fields, it is more particularly related to which a kind of micro-nano is partly led
Body photoelectric characteristic three-dimensional detection system.
Background technique
Conductor manufacturing industry is the foundation stone of generation information technology industry, mark semiconductors manufacture ability in addition to technique process
Also important one is exactly technology controlling and process ability outside precision, and the optical electrical parameter testing of wafer scale is reflection technological fluctuation
One of important evidence.
With the development of photoelectric technology, the photodetector as one of electro-optical system core starts towards array, collection
The directions such as Cheng Hua, high speed, high sensitivity are developed.How to carry out optical electrical parameter testing in wafer scale is to improve technology controlling and process ability
One of key, while being also to carry out cDNA microarray, improve subsequent yield rate and reduce the important channel of manufacturing cost.
Currently, the wafer fabrication techniques of state overall diameter 300mm are very mature, the semiconductor production line that the whole world is newly gone into operation is big
The wafer that part is 300mm using diameter.There is a big difference compared with foreign countries for domestic wafer manufacture level, still with diameter 100mm
The wafer of~200mm is main product, and positioning accuracy and temperature control precision are lower, and for example most products can only be normal
It is tested under temperature, such as exhibition core FL series etc., it is difficult to meet the diversified demand of semiconductor die loop truss.Big stroke height positioning
The high/low temperature detection device of precision is monopolized by foreign brand name always, from production technology to test method, from production test equipment to
The peripheral holding equipment such as cleaning encapsulation, will nearly all introduce from foreign countries.
Summary of the invention
The present invention dig-ins domestic and international semiconductor crystal wafer detection technique development trend, breaks through the high-precision of large area high uniformity
Thermostatic control technology；The big mobile control technology of stroke precision；Probe autoregistration positioning and Pressure Control Technology；Detection of Weak Signals
With processing technique；Automatic testing and control technology.Invent a kind of micro-nano semiconductor light electrical characteristics three-dimensional detection system, system packet
It includes: optical signal driving source, for providing light stimulus input signal for wafer；Can auto-focusing high definition CCD microscope, for providing
Machine vision；IV/CV/ pulse/noise-measuring system, for providing pumping signal to wafer and acquiring tested wafer output letter
Number；Ultra-low temperature surroundings steam detects circulating dehumidification device, for detecting and reducing moisture content, prevents in ultra-low temperature surroundings detection
Frost；Big cross-layer temperature control equipment provides wide temperature environment for tested wafer；Weak signal extraction unit, for measuring
The small-signal of tested wafer output；Dual needle pressure detection device and probe, for contacting wafer and adjusting alignment position and connect
Contacting surface；Chuck, for carrying tested wafer；Four axis move stage body, are used for XYZ axis linear movement and R axis moving in rotation；Sealed screen
Camera bellows is covered, for providing stable brightness, temperature and humidity test environment for tested wafer；Computer and Data Analysis Software are controlled,
For realizing the integrated coordinated control of system, it is tested the processing and analysis of wafer detection data.
Preferably, in above-mentioned micro-nano semiconductor light electrical characteristics three-dimensional detection system, the big cross-layer temperature control dress
Achievable -60 DEG C~200 DEG C are set, temperature deviation ± 0.25 DEG C@300mm；
Preferably, in above-mentioned micro-nano semiconductor light electrical characteristics three-dimensional detection system, the stage body that moves around can be real
Existing XY axis shift motion 300mm, 0.5 μm of positioning accuracy；Z axis shift motion 15mm, 1 μm of positioning accuracy；R axis moving range: ±
10 °, positioning accuracy ± 0.3'；
Preferably, the micro-nano semiconductor light electrical characteristics three-dimensional detection system has probe autoregistration and pressure control
Function；
Preferably, the micro-nano semiconductor light electrical characteristics three-dimensional detection system has the detection of ultra-low temperature surroundings steam and follows
Ring dehumidification function；
Preferably, the micro-nano semiconductor light electrical characteristics three-dimensional detection system is a kind of Auto-Test System.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the system composition block diagram of the invention；
Fig. 2 is overall structure diagram of the invention；
Fig. 3 is that internal structure of the invention is illustrated.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.
The object of the present invention is to provide a kind of micro-nano semiconductor light electrical characteristics three-dimensional detection system, please refer to Fig. 1, Fig. 2,
Shown in Fig. 3, Fig. 1 is the system composition block diagram provided in an embodiment of the present invention, and Fig. 2 is overall structure diagram, and Fig. 3 is of the invention
Schematic diagram of internal structure.In the present embodiment micro-nano semiconductor light electrical characteristics three-dimensional detection system include: 1, optical signal driving source/
CCD microscope；2, probe；3, dual needle pressure detection；4, it is tested wafer；5, chuck；6, the mobile stage body of 4 axis；7, closed shield is dark
Case；9, microscope mobile station, 10, signal/control/nitrogen access port；11, weak signal is extracted；12, IV/CV/ pulse/noise is surveyed
Measure device；13, ultra-low temperature surroundings steam detects circulating dehumidification；14, big cross-layer temperature control；15, computer and data point are controlled
Analyse software composition.As shown in Fig. 2, the present invention guarantees its internal air-tightness and brightness environment by 7, closed shield camera bellows.Its
8, internal structure signal is as shown in Figure 3.
Described 1, optical signal driving source/CCD microscope；2, probe；4, it is tested wafer；5, chuck；6, the mobile stage body of 4 axis；
9, microscope mobile station is inside 7, closed shield camera bellows.7, closed shield camera bellows can guarantee the air-tightness of 8, internal structure
And brightness environment.4 are fixed by 5, chuck, tested wafer, described 5, chuck and 6,4 axis move stage body and mutually fix, and pass through it
Autoregistration makes 4 described in 2, probe alignment, is tested wafer.Described 1, optical signal driving source/CCD microscope is located on 4, tested wafer
Side, is fixed on 9, microscope mobile station, by optical signal appropriate, by the test image of high quality by 10, signal/control/
Nitrogen access port is transferred to 15, control computer and Data Analysis Software.During the test, detection is pressed to protect by 3, dual needle
Card 4, tested wafer are not scratched by 2, probe.2, probe can be used as voltage source or current source with 4, tested wafer contacts and pass through
11, weak signal, which is extracted, will extract signal incoming 12, IV/CV/ pulse/noise-measuring system, finally by 10, signal/control/nitrogen
Gas access port is passed to 15, control computer and Data Analysis Software.Described 14, the control of big cross-layer temperature can be according to different realities
The demand of testing can construct arbitrary temp in -60 DEG C~200 DEG C sections and have very little temperature deviation (± 0.25 DEG C of@300mm)
Environment is tested, temperature passes to 4, tested wafer by 5, chuck.When low temperature (- 60 DEG C) is tested, to prevent 4, quilt
Wafer frosting is surveyed, circulating dehumidification and 10, signal/control/nitrogen access port real-time detection are detected by 13, ultra-low temperature surroundings steam
Wafer installation site moisture content guarantees moisture content≤5000ppm, and adjusts be filled with nitrogen flow accordingly, guarantees ultralow
Frostless control under warm environment.
Wherein, in the control of described 14, temperature, the big cross-layer large area temperature thermodynamical model of wafer chuck is established,
Realize ± 0.25 DEG C of@300mm temperature accuracy of -60 DEG C~200 DEG C big cross-layer temperature range.Chuck temperature control is using single compression
Mechanism cold, Electric heating heat mode.Due to the complexity of physical model itself, chuck large area temperature thermodynamics is being carried out
Model foundation and calculate when, need to carry out it is assumed hereinafter that:
(1) temperature field in computation model under steady state operating conditions, therefore ignore time term in all differential equations；
(2) air is dry air and is Newtonian fluid in the locating shielding camera bellows of chuck, and density and specific heat at constant pressure are definite value；
(3) air meets non-slip condition on solid wall surface in shielded box；
(4) meet Boussinesq, that is, ignore viscous dissipation in fluid.
Standard k-ε model is typical two-equation model.The model stability is high, and calculation amount is moderate, there is more data
Accumulation and higher precision, are widely used.In the present invention, the mobility status of air meets being applicable in for standard k-ε model in model
Condition, therefore turbulence model uses standard k-ε model, and is handled near wall using Standard law of wall method, and formed
Governing equation are as follows:
WhereinFor some variable,It is variable diffusion coefficient, S is source item.In above formula, each variable, diffusion coefficient and source
Item is shown in Table 1
Variable, diffusion coefficient and source item in each governing equation of table 1
Above-mentioned to be based on the embodiment of the present invention, those of ordinary skill in the art are obtained without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Claims (10)
1. a kind of micro-nano semiconductor light electrical characteristics three-dimensional detection system, comprising: optical signal driving source and CCD microscope (1), In
When tested wafer (4) carry out response characteristics to light test, optical signal driving source is that wafer (4) provide light stimulus input signal, is tested
When wafer detection is initially aligned, CCD microscope provides machine vision, and real-time monitoring mobile station takes the needle and be tested crystalline substance in detection process
Round shape state, IV, CV, pulse and noise-measuring system (12) are tested in wafer (4) detection process, are provided tested wafer (4) and are swashed
Signal is encouraged, and is acquired by weak signal extraction unit (11) and probe (2) and is tested wafer (4) output signal, completion IV, CV,
Pulse, noise objective detection, ultra-low temperature surroundings steam detect circulating dehumidification device (13), are tested wafer (4) ultra-low temperature surroundings and survey
When examination, steam frosting velocity is accelerated, which realizes low moisture content high-precision detection and high-speed circulating dehumidifying, to be tested wafer
(4) frostless environment is provided, realizes and detects frost-free under tested wafer (4) ultra-low temperature surroundings, big cross-layer temperature control equipment (14),
Wide temperature environment is provided for tested wafer (4) by heating or freezing to chuck (5), weak signal extraction unit (11) passes through spy
Needle (2) provides pumping signal to tested wafer (4), while measuring tested wafer (4) output signal, and dual needle presses detection device
(3) and probe (2), probe (2) are that the contact medium of tested wafer (4) Photoelectric Detection passes through before the detection of tested wafer (4)
Dual needle presses detection device (3), wherein being formed double by CCD monitoring probe position and deformation degree combination current pressure numerical value
Re-detection, the alignment position and contact surface of adjustment probe (2) and tested wafer (4) guarantee that probe (2) and tested wafer (4) can
By contact, while tested wafer (4) will not be scratched, chuck (5) is tested the plummer of wafer (4), and four axis are mobile stage body (6), move
Dynamic stage body (6) pass through the accurate XYZ axis linear movement and R axis moving in rotation for controlling achievable large stroke and high precision, closed shield
Camera bellows (7) is divided into inside and outside two layers, and outer layer is shell, and internal layer is heat insulation layer, provided for tested wafer (4) stablize brightness,
The detection environment of temperature and humidity, controls computer and Data Analysis Software (15), and control computer realizes optical signal driving source and CCD
Microscope (1), IV, CV, pulse and noise-measuring system (12), ultra-low temperature surroundings steam detect circulating dehumidification device (13), greatly
Cross-layer temperature control equipment (14), the integrated coordinated control of four axis mobile stage body (6), while quilt is realized by Data Analysis Software
The processing and analysis of wafer (4) detection data are surveyed, counts the qualified product of tested wafer (4) chip, which is characterized in that by described
Ultra-low temperature surroundings steam detects circulating dehumidification device (13) and signal, control and nitrogen access port (10) real-time detection wafer are installed
Position moisture content guarantees moisture content≤5000ppm, and adjusts be filled with nitrogen flow accordingly, guarantees at low ambient temperatures
Frostless control.
2. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1, which is characterized in that the CCD
Microscope (1) be can autozoom high definition CCD microscope.
3. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1, which is characterized in that described is super
Low temperature environment steam detection circulating dehumidification device (13) can make system keep frostless state under -60 DEG C of environment.
4. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1 or 3, which is characterized in that described
Big cross-layer temperature control equipment (14) can be achieved -60 DEG C~200 DEG C big cross-layer temperature range ± 0.25 DEG C of@300mm temperature
Precision.
5. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1, which is characterized in that described is micro-
Weak signal extraction unit (11) extracted small-signal is non-stationary signal and is in nA, pF rank.
6. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1, which is characterized in that described is double
The autoregistration of probe test position can be achieved in weight needle pressure detection device (3) and probe (2) and pressure controls.
7. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1, which is characterized in that the card
Disk (5) can conduct high/low temperature to tested wafer.
8. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1, which is characterized in that described four
Axis mobile stage body (6) is by accurate control, XY axis shift motion 300mm, and 0.5 μm of positioning accuracy；Z axis shift motion 15mm, it is fixed
1 μm of precision of position；R axis moving range ± 10 °, positioning accuracy ± 0.3'.
9. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1 or 8, which is characterized in that described
The micro-nano achievable wafer of semiconductor light electrical characteristics three-dimensional detection system (4) automatically detect.
10. micro-nano semiconductor light electrical characteristics three-dimensional detection system according to claim 1 or 3, which is characterized in that described
Closed shield camera bellows (7) be that tested wafer (4) provide optical dark room environment, realize tested wafer dark counting, dark current measurement；
Play noise shielding when detecting, improves tested wafer (4) output signal-noise ratio；In ultra-low temperature surroundings test, sealing
The air-tightness that camera bellows (7) protect tested wafer (4) test environment is shielded, detects circulating dehumidification device in ultra-low temperature surroundings steam
(13) lower frost-free is acted on.
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| KR102010329B1 (en) * | 2017-08-04 | 2019-10-15 | 주식회사 디엠에스 | Substrate processing apparatus and in line type substrate processing system using the same |
| JP6308639B1 (en) * | 2017-08-07 | 2018-04-11 | 株式会社テクノホロン | Probing station |
| CN109655731A (en) * | 2017-10-12 | 2019-04-19 | 北京信息科技大学 | A kind of demisler when the low-temperature test for wafer |
| CN109406984B (en) * | 2018-09-14 | 2021-11-02 | 上海华岭集成电路技术股份有限公司 | Intelligent test analysis method for integrated circuit full ecological chain |
| CN110703068B (en) * | 2019-11-21 | 2021-01-29 | 中芯集成电路制造(绍兴)有限公司 | Wafer needle pressure testing method and device, controller and wafer tester |
| CN112763189A (en) * | 2020-12-24 | 2021-05-07 | 松山湖材料实验室 | Measuring device for EBCMOS resolution parameter |
| CN113324739A (en) * | 2021-06-04 | 2021-08-31 | 盐城东紫光电科技有限公司 | Using method of MiniLED detection equipment with point-to-point multi-optical-path optical component |
| CN116504664A (en) * | 2023-06-28 | 2023-07-28 | 东莞市兆恒机械有限公司 | Wafer detection method, detection device and detection system |
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| CN101128716A (en) * | 2004-10-26 | 2008-02-20 | 应用材料股份有限公司 | Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers |
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| CN87209491U (en) * | 1987-06-24 | 1988-05-11 | 石家庄市自动化所 | Dynamic quality selecter for semiconductor rectifier |
| AU2002253773A1 (en) * | 2002-04-11 | 2003-11-17 | Gintic Institute Of Manufacturing Technology | Systems and methods for deformation measurement |
| CN102650604A (en) * | 2011-09-26 | 2012-08-29 | 北京京东方光电科技有限公司 | Airflow distribution testing method and apparatus system for clean room |
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| CN101128716A (en) * | 2004-10-26 | 2008-02-20 | 应用材料股份有限公司 | Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers |
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