CN118092530A - Temperature calibration method, device and system - Google Patents
Temperature calibration method, device and system Download PDFInfo
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- CN118092530A CN118092530A CN202211439153.7A CN202211439153A CN118092530A CN 118092530 A CN118092530 A CN 118092530A CN 202211439153 A CN202211439153 A CN 202211439153A CN 118092530 A CN118092530 A CN 118092530A
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- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000012937 correction Methods 0.000 claims abstract description 106
- 238000010438 heat treatment Methods 0.000 claims abstract description 84
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 238000012360 testing method Methods 0.000 claims description 31
- 238000004886 process control Methods 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003303 reheating Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
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Abstract
The application relates to a temperature calibration method, a temperature calibration device and a temperature calibration system, which are used for temperature calibration of semiconductor equipment. Comprising the following steps: obtaining a target temperature; acquiring the temperature of a calibration sheet, wherein the calibration sheet is placed on a calibration disk in the semiconductor device; acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature; and correcting the heating temperature according to the temperature correction value. In the temperature calibration method, the temperature of the calibration sheet and the target temperature are applied to obtain the temperature correction value, so that the heating temperature is corrected, the temperature of the calibration sheet can be adjusted in real time, the difference between the temperature of the calibration sheet and the target temperature is reduced, the difference between the temperature of a process sheet heated by semiconductor equipment subsequently and the target temperature is reduced, the influence of the temperature difference on the subsequent process is reduced, and the accurate processing of the wafer is completed.
Description
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a temperature calibration method, device, and system.
Background
In the field of semiconductor technology, the heating process of various semiconductor devices requires monitoring and adjusting the temperature.
However, when the conventional semiconductor device is heated, the temperature of the silicon carbide disc can be monitored, and the wafer cannot be accurately processed.
Disclosure of Invention
In view of the shortcomings of the conventional technology, the application aims to provide a temperature calibration method, a temperature calibration device and a temperature calibration system, which aim to solve the problem that accurate processing cannot be performed on a wafer accurately.
A temperature calibration method for temperature calibrating a semiconductor device, the method comprising:
Obtaining a target temperature;
acquiring the temperature of a calibration sheet, wherein the calibration sheet is placed on a calibration disk in the semiconductor device;
acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature;
And correcting the heating temperature according to the temperature correction value.
In the temperature calibration method, the temperature of the calibration sheet and the target temperature are applied to obtain the temperature correction value, so that the heating temperature is corrected, the temperature of the calibration sheet can be adjusted in real time, the difference between the temperature of the calibration sheet and the target temperature is reduced, the difference between the temperature of a process sheet heated by the semiconductor equipment subsequently and the target temperature is reduced, the influence of the temperature difference on the subsequent process is reduced, and the accurate processing of the wafer is completed.
Optionally, acquiring a temperature correction value according to the temperature of the calibration sheet and the target temperature includes:
Acquiring the temperatures of a plurality of calibration areas on the calibration disc according to the temperature of the calibration sheet;
acquiring temperature correction values of the plurality of calibration areas according to the temperatures of the plurality of calibration areas and the target temperature;
correcting the heating temperature according to the temperature correction value, including:
and correcting the heating temperatures of the plurality of calibration areas according to the temperature correction values of the plurality of calibration areas.
Optionally, a plurality of calibration sheets are placed on the calibration disk, and the temperature of the calibration sheets is obtained, including:
acquiring the temperatures of the plurality of calibration sheets;
Acquiring the temperatures of a plurality of calibration areas on the calibration disk according to the temperature of the calibration sheet, wherein the method comprises the following steps:
for each calibration area, the temperature of the calibration area is obtained according to the temperature of the calibration sheet related to the calibration area.
Optionally, the semiconductor device includes a heating device, and before the target temperature is obtained, the method includes:
and heating the heating device to a target temperature according to a preset heating program.
Optionally, before the heating device is heated to the target temperature according to a preset heating program, the method includes:
And setting process control parameters.
Optionally, after correcting the heating temperature according to the temperature correction value, the method includes:
according to a preset heating program, the heating device is heated to the corrected heating temperature again;
The heating temperature is repeatedly corrected.
Optionally, when performing temperature calibration on the semiconductor device, a calibration disc and a test disc are placed in the semiconductor device, where the calibration disc carries a calibration sheet, and the test disc carries a test sheet, and before acquiring the temperature correction value according to the temperature of the calibration sheet and the target temperature, the method includes:
Acquiring the temperature of the test disc;
When the difference between the temperature of the test disc and the temperature of the correction sheet is smaller than a threshold temperature difference, acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature;
And stopping calibration when the difference between the temperature of the test disc and the temperature of the calibration sheet is not smaller than a threshold temperature difference.
Based on the same inventive concept, the present application also provides a temperature calibration device, the device comprising:
the temperature acquisition module is used for acquiring the target temperature and the temperature of the correction sheet;
a temperature correction value acquisition module for acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature;
and the calibration module is used for correcting the heating temperature according to the temperature correction value.
Based on the same inventive concept, the present application also provides a temperature calibration system, comprising:
The correction disc is used for bearing the correction sheet;
the temperature measuring device comprises a correction piece, wherein a temperature measuring element is arranged on the correction piece;
the temperature detection device is connected with the correction sheet and is used for detecting the temperature of the correction sheet;
And the temperature calibration device is connected with the temperature detection device and is used for correcting the heating temperature according to the temperature calibration method.
Optionally, the temperature calibration device includes:
a control unit for correcting the heating temperature according to the temperature calibration method;
And the display unit is connected with the control unit and used for displaying.
Drawings
FIG. 1 is a flow chart of a temperature calibration method in one embodiment;
FIG. 2 is a flow chart of a temperature calibration method according to another embodiment;
FIG. 3 is a schematic diagram of a temperature calibration device according to an embodiment;
Fig. 4 is a block diagram showing a structure of a temperature calibration device in one embodiment.
Reference numerals illustrate:
11-first correction piece, 12-second correction piece, 13-third correction piece, 14-fourth correction piece, 20-correction disk, 30-temperature acquisition module, 40-temperature correction value acquisition module, 50-calibration module.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the application. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The present application is intended to provide a solution to the above technical problems, the details of which will be described in the following examples.
In one embodiment, as shown in fig. 1, a temperature calibration method is provided for performing temperature calibration on a semiconductor device, including the steps of:
step S30, obtaining a target temperature;
step S40, acquiring the temperature of a calibration sheet, wherein the calibration sheet is placed on a calibration disk 20 in the semiconductor device;
step S60, acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature;
step S70, correcting the heating temperature according to the temperature correction value.
In step S30, the target temperature may be any temperature required for the semiconductor device during heating. Specifically, the acquisition may be determined and performed according to the actual situation of the semiconductor device. As an example, the semiconductor device may be a rapid thermal processing annealing furnace, in which case the heating process is a rapid thermal processing process. The rapid heat treatment can be carried out by adopting different heat preservation time after heating according to the material and the size of the workpiece, and then rapid cooling is carried out. The rapid heat treatment can lead the metal and the semiconductor to form good ohmic contact, and simultaneously lead the internal structure of the metal to reach or approach to the equilibrium state, thereby obtaining good technological performance and service performance.
In step S40, the calibration sheet is positioned on the calibration disk 20, and the calibration disk 20 is placed in the heating chamber of the semiconductor device. As an example, the semiconductor apparatus includes a rapid thermal processing annealing furnace, the calibration plate 20 includes a silicon carbide plate, and the calibration plate includes a Wafer thermocouple calibration plate (TC Wafer).
The calibration sheet can be provided with a plurality of measurement points, and one measurement point is provided with a temperature measuring element. As an example, five measurement points may be provided, at which time one temperature measuring element is provided on each of the five measurement points.
As an example, the calibration sheet may be a four inch blue light epitaxial wafer, to which an induction wire is connected, and the induction wire is connected to a temperature measuring element and a temperature detecting device on the calibration sheet. The temperature detection device detects the temperature of the calibration sheet through the temperature measuring element, and then the temperature of the calibration sheet is transmitted to the display unit for display.
The epitaxial wafer comprises a substrate and an epitaxial layer formed on the substrate, and the epitaxial wafer is used as a calibration wafer, so that the heating process of a normal process wafer can be simulated, and a reference basis is provided for the temperature of a subsequent calibration process wafer.
In step S60, a temperature correction value may be calculated from the ratio of the temperature of the calibration sheet to the target temperature. Or calculating a calibration-related temperature from the temperature of the calibration sheet, and then calculating a temperature correction value by a ratio of the calibration-related temperature to the target temperature.
In step S70, the heating temperature is corrected based on the temperature correction value, and the difference between the actual temperature of the calibration sheet and the target temperature is reduced so that the actual temperature of the calibration sheet is closer to the target temperature. The calibration sheet is similar to the process sheet in structure, so that the temperature of the process sheet in the subsequent process is more similar to the target temperature.
In the temperature calibration method, the temperature of the calibration sheet and the target temperature are applied to obtain the temperature correction value, so that the heating temperature is corrected, the temperature of the calibration sheet can be adjusted in real time, the difference between the temperature of the calibration sheet and the target temperature is reduced, the difference between the temperature of a process sheet heated by the semiconductor equipment subsequently and the target temperature is reduced, the influence of the temperature difference on the subsequent process is reduced, and the accurate processing of the wafer is completed.
In one embodiment, step S60 includes:
step S61, acquiring the temperatures of a plurality of calibration areas on the calibration disk 20 according to the temperature of the calibration sheet;
Step S62, according to the temperatures of the calibration areas and the target temperatures, temperature correction values of the calibration areas are obtained.
Step S70 includes:
Step S71, correcting the heating temperatures of the plurality of calibration areas according to the temperature correction values of the plurality of calibration areas.
In step S61, the calibration disk 20 is divided into calibration areas. Each calibration area may correspond to one calibration sheet or may correspond to a plurality of calibration sheets.
By acquiring the temperature of the calibration sheet, the temperature of the plurality of calibration areas located on the calibration disk 20 is further acquired.
In step S62, the temperature correction values of the respective plurality of calibration areas may be acquired according to the ratio between the temperatures of the plurality of calibration areas and the target temperature.
In step S71, the heating temperature of the calibration sheet corresponding to the calibration area may be corrected according to the temperature correction value corresponding to the calibration area, thereby reducing the difference between the actual temperature of the calibration sheet and the target temperature.
In the present embodiment, by dividing the correction disk 20 into areas, the temperature value can be acquired in areas, the temperature correction value can be acquired in areas, and then the heating temperature can be corrected in areas. The temperature calibration can be performed in different areas, so that the heating temperature can be more accurately and conveniently calibrated.
In one embodiment, the plurality of calibration sheets are placed on the calibration disk 20, and step S40 includes:
in step S41, temperatures of a plurality of calibration sheets are acquired.
Step S61 includes:
Step S611, for each calibration area, the temperature of the calibration area is obtained according to the temperature of the calibration sheet associated therewith.
In step S41, a plurality of calibration sheets may be provided on the calibration disk 20. When the temperature of the correction disk 20 is acquired, the temperatures of a plurality of correction sheets may be acquired.
As an example, the calibration disk 20 may be a rectangular calibration disk 20, on which four calibration sheets may be disposed, and four calibration sheets may be uniformly disposed on the calibration disk 20, and a plurality of measurement points may be disposed on each calibration sheet, and the temperature of each calibration sheet may be the average value of the plurality of measurement points.
In step S611, a calibration area may have one or more calibration tiles associated therewith, which is not limited herein.
As an example, a calibration zone may have two calibration tiles associated with it, the temperature of which calibration zone may be obtained from the temperatures of the two calibration tiles. In particular, the temperatures of the two calibration sheets may be averaged to represent the temperature of the calibration area.
As yet another example, a calibration zone may have four calibration tiles associated therewith, and the temperature of the calibration zone may be obtained from the temperatures of the four calibration tiles. In particular, the temperatures of the four calibration sheets may be averaged to represent the temperature of the calibration area.
For example, referring to fig. 3, the calibration disk 20 may be divided into five calibration areas, wherein the first calibration area, the second calibration area, the third calibration area, and the fourth calibration area are parallel to four sides of the calibration disk 20, and the fifth area is surrounded by the other four calibration areas. When the calibration disk is provided with four calibration sheets, the temperature of the first calibration area can be obtained by the temperatures of the first calibration sheet 11 and the third calibration sheet 13, the temperature of the second calibration area can be obtained by the temperatures of the second calibration sheet 12 and the fourth calibration sheet 14, the temperature of the third calibration area can be obtained by the temperatures of the third calibration sheet 13 and the fourth calibration sheet 14, the temperature of the fourth calibration area can be obtained by the temperatures of the first calibration sheet 11 and the second calibration sheet 12, and the temperatures of the first calibration sheet 11, the second calibration sheet 12, the third calibration sheet 13, and the fourth calibration sheet 14, and the temperature of the fifth calibration area can be obtained by the temperatures of the first calibration sheet 11, the second calibration sheet 12, the third calibration sheet 13, and the fourth calibration sheet 14. Specifically, the temperature of the calibration area may be an average value of the calibration sheet corresponding thereto.
The temperature of the first correction sheet 11 is set to t1, the temperature of the second correction sheet 12 is set to t2, the temperature of the third correction sheet 13 is set to t3, and the temperature of the fourth correction sheet 14 is set to t4. Then, the temperature of the first calibration area is (t1+t3)/2, the temperature of the second calibration area is (t2+t4)/2, the temperature of the third calibration area is (t3+t4)/2, the temperature of the fourth calibration area is (t1+t2)/2, and the temperature of the fifth calibration area is (t1+t2+t3+t4)/4.
At this time, a temperature compensation value R1 was set, and the target temperature was 550 ℃. Wherein, for the same region, when the first calibration is performed, the initial value of the temperature compensation value R1 may be set to 1, and for the subsequent calibration, the temperature compensation value R1 may be the temperature correction value of the region acquired by the previous calibration.
Then, for each calibration:
The temperature correction value for the first calibration region may be expressed as r1× [ (t1+t3)/2 ]/550. The temperature correction value of the second calibration area may be expressed as r1× [ (t2+t4)/2 ]/550. The temperature correction value for the third calibration area may be expressed as r1× [ (t3+t4)/2 ]/550. The temperature correction value for the fourth calibration area may be expressed as r1× [ (t1+t2)/2 ]/550. The temperature correction value of the fifth calibration area may be expressed as r1× [ (t1+t2+t3+t4)/2 ]/550.
In this embodiment, the temperature of the calibration area is obtained by the temperature of the calibration sheet related to the calibration area, so that the temperature of the calibration area is obtained more accurately.
In other embodiments, a calibration sheet with a larger size may be provided, where the calibration sheet is provided with different measurement points corresponding to different calibration areas. The temperature of the measuring point can be obtained according to the temperature measuring element arranged on the measuring point, and then the temperature of each calibration area can be obtained according to the temperatures of a plurality of measuring points on the calibration sheet.
In one embodiment, referring to fig. 2, the semiconductor apparatus includes a heating device, including, prior to step S30:
step S20, heating the heating device to the target temperature according to a preset heating program.
The preset heating program may be a program in a normal process (e.g., normal RTP). At this time, the temperature calibration is performed by heating according to a preset heating program, so that the calibration process is similar to the actual process, and the obtained calibration result is more accurate.
The preset heating program may include a first heating to heat the semiconductor device from an initial temperature (e.g., room temperature) to an intermediate temperature by the heating means, and a second heating to continue to heat the semiconductor device from the intermediate temperature to a target temperature by the heating means.
After the first heating, the heating program further includes maintaining the semiconductor device at the intermediate temperature for a first preset time. Specifically, the first preset time may be 60 seconds. After the second heating, the heating program further includes maintaining the semiconductor device at the target temperature for a second preset time. Specifically, the second preset time may be 480 seconds.
The rate of the first heating may be the same as or different from the rate of the second heating, and as an example, the rate of the first heating and the rate of the second heating may each be 5 degrees celsius per second.
By setting the two-stage heating program, the temperature control in the semiconductor device can be more accurate.
In one embodiment, referring to fig. 2, step S20 includes, before:
Step S10, setting process control parameters.
Before the heating process, the process control parameters are set. The process control parameters may include a first process control parameter and a second process control parameter. As an example, a first process control parameter may be used to stabilize the rising slope of the heating program rate and a second process control parameter may be used to smooth the rate fluctuations of the heating program. The value of the first process control parameter may be selected to be 0.05 and the value of the second process control parameter may be selected to be 0.00015.
In this embodiment, the heating process can be controlled more well by the process control parameter setting.
In one embodiment, referring to fig. 2, step S70 includes:
Step S80, according to a preset heating program, the heating device is heated to the corrected heating temperature again;
Step S90, repeatedly correcting the heating temperature.
In step S80, after the heating temperature is corrected for the first time, the corrected heating temperature is heated by the heating device.
In step S90, the heating temperature after the first correction is transmitted to the correction sheet by the heating device, the temperature correction value is again acquired based on the difference between the temperature of the correction sheet at this time and the target temperature, and the heating temperature is again corrected based on the again acquired temperature correction value.
And correcting the heating temperature for a plurality of times until the standard variance value of the temperature of the correction sheet in each area is less than 1 rho and less than or equal to 1.5 ℃.
In this embodiment, the heating temperature is corrected step by repeating steps S30 to S70 a plurality of times, and then the temperature of the calibration sheet is changed, so that the standard variance value of the temperature of the calibration sheet after the plurality of times of correction is less than 1 ρ and less than or equal to 1.5 ℃, at this time, the difference between the temperature of the calibration sheet and the target temperature is within an acceptable range, and the difference between the temperature of each region of the calibration disk 20 and the target temperature is also within an acceptable range.
In one embodiment, referring to fig. 2, when temperature calibration is performed on a semiconductor device, a calibration tray 20 and a test tray are placed in the semiconductor device, the calibration tray 20 carries a calibration sheet, and the test tray carries a test sheet, before step S60, including:
Step S51, obtaining the temperature of a test disc;
step S52, when the difference between the temperature of the test disc and the temperature of the correction sheet is smaller than the threshold temperature difference, acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature;
and step S53, stopping calibration when the difference between the temperature of the test disc and the temperature of the calibration sheet is not smaller than the threshold temperature difference.
In step S51, the test tray may be a process tray used as a test among normal process trays. The test strip may be a process strip used as a test in a normal process strip.
The thermocouple is arranged on the test disc, and the temperature of the test disc can be obtained through the thermocouple.
In step S52, the threshold temperature difference refers to the difference between the calibration sheet and the test tray under normal temperature rise conditions. When the difference between the temperature of the test tray and the temperature of the calibration sheet is smaller than the threshold temperature difference, the temperature of the calibration sheet at that time is normal and can be used to acquire a temperature correction value in a subsequent step.
In step S53, when the difference between the temperature of the test tray and the temperature of the calibration sheet is not smaller than the threshold temperature difference, at this time, the temperature of the calibration sheet is abnormal and cannot be used for the subsequent acquisition of the temperature correction value.
For example, when the temperature of the test tray is 550 ℃, and the temperature of the calibration sheet is 300 ℃, the temperature difference between the temperature of the calibration sheet and the temperature of the test tray is large, and the temperature of the calibration sheet is not obtained in error and cannot be used for subsequent temperature calibration.
In this embodiment, the temperature of the calibration sheet is compared with the temperature of the test tray, so that it can be determined whether the temperature of the calibration sheet is normal at this time, and an error in acquiring a subsequent temperature correction value is avoided, thereby affecting the temperature calibration of the semiconductor device.
It should be understood that, although the steps in the flowcharts related to the embodiments described above are sequentially shown as indicated by arrows, these steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the flowcharts described in the above embodiments may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with at least some of the other steps or stages.
Based on the same inventive concept, the embodiment of the application also provides a temperature calibration device for realizing the above-mentioned temperature calibration method. The implementation of the solution provided by the device is similar to that described in the above method, so the specific limitation of one or more embodiments of the temperature calibration device provided below may be referred to the limitation of the temperature calibration method hereinabove, and will not be repeated here.
In one embodiment, referring to fig. 4, a temperature calibration device is provided, comprising: a temperature acquisition module 30, a temperature correction value acquisition module 40, and a calibration module 50, wherein:
a temperature acquisition module 30 for acquiring the target temperature and the temperature of the calibration sheet.
The temperature correction value acquisition module 40 is used for acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature.
The calibration module 50 is used for correcting the heating temperature according to the temperature correction value.
In one embodiment, the temperature acquisition module 30 includes:
And a first temperature acquisition module for acquiring temperatures of a plurality of calibration areas on the calibration disk 20 according to the temperature of the calibration sheet.
The temperature correction value acquisition module 40 includes:
the first temperature correction value acquisition module is used for acquiring temperature correction values of the plurality of calibration areas according to the temperatures of the plurality of calibration areas and the target temperature.
The calibration module 50 includes:
The first calibration module corrects the heating temperatures of the plurality of calibration areas according to the temperature correction values of the plurality of calibration areas.
In one embodiment, the temperature acquisition module 30 further includes:
and the second temperature acquisition module is used for acquiring the temperatures of the plurality of calibration sheets.
And the third temperature acquisition module is used for acquiring the temperature of each calibration area according to the temperature of the calibration sheet related to the calibration area.
In one embodiment, the temperature calibration device further comprises:
the preset heating module is used for heating the heating device to the target temperature.
In one embodiment, the temperature calibration device further comprises:
And the process control module is used for setting process control parameters.
In one embodiment, the temperature calibration device further comprises:
And the reheating module is used for reheating the heating device to the corrected heating temperature according to a preset heating program.
The calibration module 50 further includes:
And the second calibration module is used for repeatedly correcting the heating temperature.
In one embodiment, the temperature acquisition module 30 further includes:
And the fourth temperature acquisition module is used for acquiring the temperature of the test disc.
The temperature calibration device further includes:
and the judging module is used for judging whether the temperature of the calibration sheet can be used for calibration.
The embodiment of the application also provides a temperature calibration system, which comprises: correction disk 20, correction piece, temperature detection device and temperature calibration device, wherein:
The calibration disk 20 is placed in the semiconductor device, and the calibration disk 20 is used for carrying a calibration sheet, on which temperature measuring elements are arranged, and the number of the temperature measuring elements can be one or more, which is not limited herein. The temperature detection device is connected with the calibration sheet through a temperature measurement element and is used for detecting the temperature of the calibration sheet. The temperature calibration device is connected with the temperature detection device and corrects the heating temperature by applying any one of the temperature calibration methods.
In one embodiment, the temperature calibration device includes a control unit and a display unit. The control unit is used for correcting the heating temperature according to the temperature calibration method, and the display unit is connected with the control unit and used for displaying.
In this embodiment, the temperature calibration device is provided with a control unit and a display unit, so that the operation is convenient and the readability is improved.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.
Claims (10)
1. A temperature calibration method for temperature calibrating a semiconductor device, comprising:
Obtaining a target temperature;
acquiring the temperature of a calibration sheet, wherein the calibration sheet is placed on a calibration disk in the semiconductor device;
acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature;
And correcting the heating temperature according to the temperature correction value.
2. The temperature calibration method according to claim 1, wherein acquiring a temperature correction value based on the temperature of the calibration sheet and the target temperature, comprises:
Acquiring the temperatures of a plurality of calibration areas on the calibration disc according to the temperature of the calibration sheet;
acquiring temperature correction values of the plurality of calibration areas according to the temperatures of the plurality of calibration areas and the target temperature;
correcting the heating temperature according to the temperature correction value, including:
and correcting the heating temperatures of the plurality of calibration areas according to the temperature correction values of the plurality of calibration areas.
3. The temperature calibration method of claim 2, wherein placing a plurality of calibration sheets on the calibration disk, obtaining the temperature of the calibration sheets, comprises:
acquiring the temperatures of the plurality of calibration sheets;
Acquiring the temperatures of a plurality of calibration areas on the calibration disk according to the temperature of the calibration sheet, wherein the method comprises the following steps:
for each calibration area, the temperature of the calibration area is obtained according to the temperature of the calibration sheet related to the calibration area.
4. The temperature calibration method according to claim 1, wherein the semiconductor device includes a heating means, and before the target temperature is obtained, comprising:
and heating the heating device to a target temperature according to a preset heating program.
5. The method of temperature calibration according to claim 4, wherein before heating the heating device to a target temperature according to a preset heating program, comprising:
And setting process control parameters.
6. The temperature calibration method according to claim 1, wherein after correcting the heating temperature based on the temperature correction value, comprising:
according to a preset heating program, the heating device is heated to the corrected heating temperature again;
The heating temperature is repeatedly corrected.
7. The temperature calibration method according to claim 1, wherein, when temperature calibration is performed on a semiconductor device, a calibration tray and a test tray are placed in the semiconductor device, the calibration tray carries a calibration sheet, the test tray carries a test sheet, and before acquiring a temperature correction value according to a temperature of the calibration sheet and the target temperature, the method comprises:
Acquiring the temperature of the test disc;
When the difference between the temperature of the test disc and the temperature of the correction sheet is smaller than a threshold temperature difference, acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature;
And stopping calibration when the difference between the temperature of the test disc and the temperature of the calibration sheet is not smaller than a threshold temperature difference.
8. A temperature calibration device, the device comprising:
the temperature acquisition module is used for acquiring the target temperature and the temperature of the correction sheet;
a temperature correction value acquisition module for acquiring a temperature correction value according to the temperature of the correction sheet and the target temperature;
and the calibration module is used for correcting the heating temperature according to the temperature correction value.
9. A temperature calibration system, comprising:
The correction disc is used for bearing the correction sheet;
the temperature measuring device comprises a correction piece, wherein a temperature measuring element is arranged on the correction piece;
the temperature detection device is connected with the correction sheet and is used for detecting the temperature of the correction sheet;
Temperature calibration means connected to said temperature detection means for correcting the heating temperature according to the method of any one of claims 1-7.
10. The temperature calibration system of claim 9, wherein the temperature calibration device comprises:
A control unit for correcting the heating temperature according to the method of any one of claims 1-7;
And the display unit is connected with the control unit and used for displaying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211439153.7A CN118092530A (en) | 2022-11-17 | 2022-11-17 | Temperature calibration method, device and system |
Applications Claiming Priority (1)
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