TW202332985A - 附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法 - Google Patents

附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法 Download PDF

Info

Publication number
TW202332985A
TW202332985A TW111136664A TW111136664A TW202332985A TW 202332985 A TW202332985 A TW 202332985A TW 111136664 A TW111136664 A TW 111136664A TW 111136664 A TW111136664 A TW 111136664A TW 202332985 A TW202332985 A TW 202332985A
Authority
TW
Taiwan
Prior art keywords
layer
film
substrate
reflective film
refractive index
Prior art date
Application number
TW111136664A
Other languages
English (en)
Chinese (zh)
Inventor
梅澤禎一郎
池邊洋平
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202332985A publication Critical patent/TW202332985A/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW111136664A 2021-09-30 2022-09-28 附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法 TW202332985A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-160857 2021-09-30
JP2021160857 2021-09-30

Publications (1)

Publication Number Publication Date
TW202332985A true TW202332985A (zh) 2023-08-16

Family

ID=85780693

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111136664A TW202332985A (zh) 2021-09-30 2022-09-28 附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US20240377719A1 (https=)
JP (1) JPWO2023054145A1 (https=)
KR (1) KR20240070522A (https=)
TW (1) TW202332985A (https=)
WO (1) WO2023054145A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025023299A1 (ja) * 2023-07-27 2025-01-30 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2025074642A (ja) * 2023-10-30 2025-05-14 信越化学工業株式会社 反射型マスクブランク及びその製造方法
WO2025142852A1 (ja) * 2023-12-28 2025-07-03 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
CN121115389A (zh) * 2024-06-12 2025-12-12 信越化学工业株式会社 反射型掩模坯料、反射型掩模及反射型掩模坯料的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723955B2 (ja) 1989-03-16 1998-03-09 キヤノン株式会社 軟ｘ線・真空紫外線用多層膜反射鏡
JP3097778B2 (ja) 1992-01-23 2000-10-10 日本電信電話株式会社 多層膜分光反射鏡
JPH09230098A (ja) 1996-02-21 1997-09-05 Nippon Telegr & Teleph Corp <Ntt> 多層膜ｘ線反射鏡
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
JP6546391B2 (ja) * 2014-12-02 2019-07-17 エヌ・ティ・ティ・アドバンステクノロジ株式会社 多層膜反射鏡およびｅｕｖ光装置
KR20210089406A (ko) 2020-01-08 2021-07-16 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 포토마스크
JP7577486B2 (ja) * 2020-09-10 2024-11-05 信越化学工業株式会社 Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク

Also Published As

Publication number Publication date
US20240377719A1 (en) 2024-11-14
JPWO2023054145A1 (https=) 2023-04-06
KR20240070522A (ko) 2024-05-21
WO2023054145A1 (ja) 2023-04-06

Similar Documents

Publication Publication Date Title
US20230418148A1 (en) Multilayer reflective film-equipped substrate, reflective mask blank, reflective mask, and method for producing semiconductor device
CN112666788B (zh) 带多层反射膜的基板、反射型掩模坯料、反射型掩模及制造方法、及半导体装置制造方法
JP2021128247A (ja) 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
JP7350571B2 (ja) 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法
TW202332985A (zh) 附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法
WO2020184473A1 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR20200088283A (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
JP2024075660A (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
KR20220161261A (ko) 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법
JP6855190B2 (ja) 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法
US20240411220A1 (en) Multilayer reflective film-attached substrate, reflective mask blank, reflective mask, and method for producing semiconductor device
US20250370324A1 (en) Multilayer reflective film-attached substrate, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
KR20220024004A (ko) 박막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP7271760B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR20250093487A (ko) 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
JP7837943B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
TW202430670A (zh) 附導電膜基板、反射型遮罩基底、反射型遮罩及半導體裝置之製造方法
WO2025205962A1 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
TW202609451A (zh) 附多層反射膜基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法