KR20240070522A - 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20240070522A
KR20240070522A KR1020247007779A KR20247007779A KR20240070522A KR 20240070522 A KR20240070522 A KR 20240070522A KR 1020247007779 A KR1020247007779 A KR 1020247007779A KR 20247007779 A KR20247007779 A KR 20247007779A KR 20240070522 A KR20240070522 A KR 20240070522A
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KR
South Korea
Prior art keywords
film
multilayer reflective
reflective film
refractive index
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247007779A
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English (en)
Korean (ko)
Inventor
데이이찌로 우메자와
요헤이 이께베
Original Assignee
호야 가부시키가이샤
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Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20240070522A publication Critical patent/KR20240070522A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020247007779A 2021-09-30 2022-09-22 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Pending KR20240070522A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021160857 2021-09-30
JPJP-P-2021-160857 2021-09-30
PCT/JP2022/035292 WO2023054145A1 (ja) 2021-09-30 2022-09-22 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20240070522A true KR20240070522A (ko) 2024-05-21

Family

ID=85780693

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247007779A Pending KR20240070522A (ko) 2021-09-30 2022-09-22 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US20240377719A1 (https=)
JP (1) JPWO2023054145A1 (https=)
KR (1) KR20240070522A (https=)
TW (1) TW202332985A (https=)
WO (1) WO2023054145A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025023299A1 (ja) * 2023-07-27 2025-01-30 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2025074642A (ja) * 2023-10-30 2025-05-14 信越化学工業株式会社 反射型マスクブランク及びその製造方法
WO2025142852A1 (ja) * 2023-12-28 2025-07-03 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
CN121115389A (zh) * 2024-06-12 2025-12-12 信越化学工业株式会社 反射型掩模坯料、反射型掩模及反射型掩模坯料的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02242201A (ja) 1989-03-16 1990-09-26 Canon Inc 軟ｘ線・真空紫外線用多層膜反射鏡
JPH05203798A (ja) 1992-01-23 1993-08-10 Nippon Telegr & Teleph Corp <Ntt> 多層膜分光反射鏡
JPH09230098A (ja) 1996-02-21 1997-09-05 Nippon Telegr & Teleph Corp <Ntt> 多層膜ｘ線反射鏡
JP2021110953A (ja) 2020-01-08 2021-08-02 エスアンドエス テック カンパニー リミテッド 極紫外線用反射型ブランクマスク及びフォトマスク

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
JP6546391B2 (ja) * 2014-12-02 2019-07-17 エヌ・ティ・ティ・アドバンステクノロジ株式会社 多層膜反射鏡およびｅｕｖ光装置
JP7577486B2 (ja) * 2020-09-10 2024-11-05 信越化学工業株式会社 Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02242201A (ja) 1989-03-16 1990-09-26 Canon Inc 軟ｘ線・真空紫外線用多層膜反射鏡
JPH05203798A (ja) 1992-01-23 1993-08-10 Nippon Telegr & Teleph Corp <Ntt> 多層膜分光反射鏡
JPH09230098A (ja) 1996-02-21 1997-09-05 Nippon Telegr & Teleph Corp <Ntt> 多層膜ｘ線反射鏡
JP2021110953A (ja) 2020-01-08 2021-08-02 エスアンドエス テック カンパニー リミテッド 極紫外線用反射型ブランクマスク及びフォトマスク

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Overt Wood et al. "Improved Ru/Si multilayer reflective coatings for advanced extreme-ultraviolet lithography photomasks". Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977619(18 March 2016)

Also Published As

Publication number Publication date
US20240377719A1 (en) 2024-11-14
JPWO2023054145A1 (https=) 2023-04-06
TW202332985A (zh) 2023-08-16
WO2023054145A1 (ja) 2023-04-06

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