JPWO2023054145A1 - - Google Patents
Info
- Publication number
- JPWO2023054145A1 JPWO2023054145A1 JP2023551400A JP2023551400A JPWO2023054145A1 JP WO2023054145 A1 JPWO2023054145 A1 JP WO2023054145A1 JP 2023551400 A JP2023551400 A JP 2023551400A JP 2023551400 A JP2023551400 A JP 2023551400A JP WO2023054145 A1 JPWO2023054145 A1 JP WO2023054145A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021160857 | 2021-09-30 | ||
| PCT/JP2022/035292 WO2023054145A1 (ja) | 2021-09-30 | 2022-09-22 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023054145A1 true JPWO2023054145A1 (https=) | 2023-04-06 |
| JPWO2023054145A5 JPWO2023054145A5 (https=) | 2025-07-14 |
Family
ID=85780693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023551400A Pending JPWO2023054145A1 (https=) | 2021-09-30 | 2022-09-22 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240377719A1 (https=) |
| JP (1) | JPWO2023054145A1 (https=) |
| KR (1) | KR20240070522A (https=) |
| TW (1) | TW202332985A (https=) |
| WO (1) | WO2023054145A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025023299A1 (ja) * | 2023-07-27 | 2025-01-30 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| JP2025074642A (ja) * | 2023-10-30 | 2025-05-14 | 信越化学工業株式会社 | 反射型マスクブランク及びその製造方法 |
| WO2025142852A1 (ja) * | 2023-12-28 | 2025-07-03 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| CN121115389A (zh) * | 2024-06-12 | 2025-12-12 | 信越化学工业株式会社 | 反射型掩模坯料、反射型掩模及反射型掩模坯料的制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2723955B2 (ja) | 1989-03-16 | 1998-03-09 | キヤノン株式会社 | 軟ｘ線・真空紫外線用多層膜反射鏡 |
| JP3097778B2 (ja) | 1992-01-23 | 2000-10-10 | 日本電信電話株式会社 | 多層膜分光反射鏡 |
| JPH09230098A (ja) | 1996-02-21 | 1997-09-05 | Nippon Telegr & Teleph Corp <Ntt> | 多層膜ｘ線反射鏡 |
| JP2006332153A (ja) * | 2005-05-24 | 2006-12-07 | Hoya Corp | 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法 |
| JP6546391B2 (ja) * | 2014-12-02 | 2019-07-17 | エヌ・ティ・ティ・アドバンステクノロジ株式会社 | 多層膜反射鏡およびｅｕｖ光装置 |
| KR20210089406A (ko) | 2020-01-08 | 2021-07-16 | 주식회사 에스앤에스텍 | 극자외선용 반사형 블랭크 마스크 및 포토마스크 |
| JP7577486B2 (ja) * | 2020-09-10 | 2024-11-05 | 信越化学工業株式会社 | Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク |
-
2022
- 2022-09-22 JP JP2023551400A patent/JPWO2023054145A1/ja active Pending
- 2022-09-22 US US18/692,007 patent/US20240377719A1/en active Pending
- 2022-09-22 KR KR1020247007779A patent/KR20240070522A/ko active Pending
- 2022-09-22 WO PCT/JP2022/035292 patent/WO2023054145A1/ja not_active Ceased
- 2022-09-28 TW TW111136664A patent/TW202332985A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20240377719A1 (en) | 2024-11-14 |
| KR20240070522A (ko) | 2024-05-21 |
| TW202332985A (zh) | 2023-08-16 |
| WO2023054145A1 (ja) | 2023-04-06 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250703 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250703 |