TW202326279A - 附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法 - Google Patents

附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法 Download PDF

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Publication number
TW202326279A
TW202326279A TW111141078A TW111141078A TW202326279A TW 202326279 A TW202326279 A TW 202326279A TW 111141078 A TW111141078 A TW 111141078A TW 111141078 A TW111141078 A TW 111141078A TW 202326279 A TW202326279 A TW 202326279A
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TW
Taiwan
Prior art keywords
layer
film
substrate
multilayer reflective
protective film
Prior art date
Application number
TW111141078A
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English (en)
Chinese (zh)
Inventor
中川真徳
鈴木宏太
岸田響
Original Assignee
日商Ｈｏｙａ股份有限公司
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Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202326279A publication Critical patent/TW202326279A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW111141078A 2021-10-28 2022-10-28 附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法 TW202326279A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021176757 2021-10-28
JP2021-176757 2021-10-28
WOPCT/JP2022/040039 2022-10-26
PCT/JP2022/040039 WO2023074770A1 (ja) 2021-10-28 2022-10-26 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW202326279A true TW202326279A (zh) 2023-07-01

Family

ID=86158070

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111141078A TW202326279A (zh) 2021-10-28 2022-10-28 附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法

Country Status (6)

Country Link
US (1) US20240411220A1 (https=)
EP (1) EP4425258A4 (https=)
JP (1) JPWO2023074770A1 (https=)
KR (1) KR20240089139A (https=)
TW (1) TW202326279A (https=)
WO (1) WO2023074770A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
TW202603476A (zh) * 2024-03-23 2026-01-16 日商Ｈｏｙａ股份有限公司 附導電膜基板、附多層反射膜基板、遮罩基底、反射型遮罩、及半導體裝置之製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2511945A4 (en) 2009-12-09 2014-09-03 Asahi Glass Co Ltd MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING THEREOF
WO2012014904A1 (ja) 2010-07-27 2012-02-02 旭硝子株式会社 Ｅｕｖリソグラフィ用反射層付基板、およびｅｕｖリソグラフィ用反射型マスクブランク
JP2014127630A (ja) * 2012-12-27 2014-07-07 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
JP6301127B2 (ja) * 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
TWI833025B (zh) * 2019-06-20 2024-02-21 日商Ｈｏｙａ股份有限公司 反射型遮罩基底、反射型遮罩、以及反射型遮罩及半導體裝置之製造方法

Also Published As

Publication number Publication date
EP4425258A1 (en) 2024-09-04
US20240411220A1 (en) 2024-12-12
KR20240089139A (ko) 2024-06-20
EP4425258A4 (en) 2025-11-26
WO2023074770A1 (ja) 2023-05-04
JPWO2023074770A1 (https=) 2023-05-04

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