JPWO2023074770A1 - - Google Patents

Info

Publication number
JPWO2023074770A1
JPWO2023074770A1 JP2023556616A JP2023556616A JPWO2023074770A1 JP WO2023074770 A1 JPWO2023074770 A1 JP WO2023074770A1 JP 2023556616 A JP2023556616 A JP 2023556616A JP 2023556616 A JP2023556616 A JP 2023556616A JP WO2023074770 A1 JPWO2023074770 A1 JP WO2023074770A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023556616A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023074770A1 publication Critical patent/JPWO2023074770A1/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48Protective coatings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2023556616A 2021-10-28 2022-10-26 Pending JPWO2023074770A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021176757 2021-10-28
PCT/JP2022/040039 WO2023074770A1 (ja) 2021-10-28 2022-10-26 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPWO2023074770A1 true JPWO2023074770A1 (https=) 2023-05-04

Family

ID=86158070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023556616A Pending JPWO2023074770A1 (https=) 2021-10-28 2022-10-26

Country Status (6)

Country Link
US (1) US20240411220A1 (https=)
EP (1) EP4425258A4 (https=)
JP (1) JPWO2023074770A1 (https=)
KR (1) KR20240089139A (https=)
TW (1) TW202326279A (https=)
WO (1) WO2023074770A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
TW202603476A (zh) * 2024-03-23 2026-01-16 日商Hoya股份有限公司 附導電膜基板、附多層反射膜基板、遮罩基底、反射型遮罩、及半導體裝置之製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2511945A4 (en) 2009-12-09 2014-09-03 Asahi Glass Co Ltd MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING THEREOF
WO2012014904A1 (ja) 2010-07-27 2012-02-02 旭硝子株式会社 Euvリソグラフィ用反射層付基板、およびeuvリソグラフィ用反射型マスクブランク
JP2014127630A (ja) * 2012-12-27 2014-07-07 Asahi Glass Co Ltd Euvリソグラフィ用反射型マスクブランクおよびその製造方法
JP6301127B2 (ja) * 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
TWI833025B (zh) * 2019-06-20 2024-02-21 日商Hoya股份有限公司 反射型遮罩基底、反射型遮罩、以及反射型遮罩及半導體裝置之製造方法

Also Published As

Publication number Publication date
EP4425258A1 (en) 2024-09-04
US20240411220A1 (en) 2024-12-12
KR20240089139A (ko) 2024-06-20
EP4425258A4 (en) 2025-11-26
TW202326279A (zh) 2023-07-01
WO2023074770A1 (ja) 2023-05-04

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Legal Events

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