TW202325877A - 基板處理方法 - Google Patents

基板處理方法 Download PDF

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Publication number
TW202325877A
TW202325877A TW111129938A TW111129938A TW202325877A TW 202325877 A TW202325877 A TW 202325877A TW 111129938 A TW111129938 A TW 111129938A TW 111129938 A TW111129938 A TW 111129938A TW 202325877 A TW202325877 A TW 202325877A
Authority
TW
Taiwan
Prior art keywords
pressure
temperature
substrate processing
processing method
chamber
Prior art date
Application number
TW111129938A
Other languages
English (en)
Chinese (zh)
Inventor
金昶熏
張源準
金周燮
朴坰
南尚錄
安元植
安海桭
李大成
Original Assignee
南韓商圓益Ｉｐｓ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商圓益Ｉｐｓ股份有限公司 filed Critical 南韓商圓益Ｉｐｓ股份有限公司
Publication of TW202325877A publication Critical patent/TW202325877A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW111129938A 2021-12-15 2022-08-09 基板處理方法 TW202325877A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2021-0179979 2021-12-15
KR1020210179979A KR20230090855A (ko) 2021-12-15 2021-12-15 기판처리방법

Publications (1)

Publication Number Publication Date
TW202325877A true TW202325877A (zh) 2023-07-01

Family

ID=86772836

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111129938A TW202325877A (zh) 2021-12-15 2022-08-09 基板處理方法

Country Status (3)

Country Link
KR (1) KR20230090855A (ko)
TW (1) TW202325877A (ko)
WO (1) WO2023113130A1 (ko)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100332129B1 (ko) * 1995-12-29 2002-11-07 주식회사 하이닉스반도체 반도체소자의산화막형성방법
KR100982996B1 (ko) * 2005-03-08 2010-09-17 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
JP2017147263A (ja) * 2016-02-15 2017-08-24 東京エレクトロン株式会社 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
KR102540252B1 (ko) * 2018-07-10 2023-06-07 주식회사 원익아이피에스 반도체 소자의 제조 방법
KR20210045296A (ko) * 2019-10-16 2021-04-26 주식회사 원익아이피에스 기판처리방법

Also Published As

Publication number Publication date
KR20230090855A (ko) 2023-06-22
WO2023113130A1 (ko) 2023-06-22

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