TW202325877A - Substrate processing method - Google Patents

Abstract

The present invention relates to a substrate treatment method and, more specifically, to a substrate treatment method for improving substrate properties. The present invention provides a substrate treatment method comprising: a first compression and decompression step (S100) for performing, at least once, compression and decompression of a chamber in which a substrate is treated; and a second compression and decompression step (S200) for performing, at least once, compression and decompression of the chamber at a temperature higher than the first compression and decompression step (S100), after the first compression and decompression step (S100).

Description

Substrate processing method

The present invention relates to a substrate processing method, and more particularly, to a substrate processing method for improving substrate characteristics.

Generally, a substrate processing method may include a process of forming a thin film by deposition.

However, in the past, in order to remove impurities and improve film properties after forming a thin film on a substrate, there is no particular preference or fully verified known technology in the industry.

In particular, with the advent of substrates with high aspect ratios for three-dimensional semiconductor components, it is becoming more difficult to remove impurities by lowering the film deposition temperature or necessarily using a gas source with a high impurity content in order to meet the step coverage standard .

Accordingly, there is demand for a substrate processing method that improves film characteristics by removing impurities present in a thin film so that no film is degraded after film formation.

For this reason, in the past, after raising the pressure and temperature to the process value, the substrate is boosted and depressurized to remove impurities. However, such a substrate processing method is that the substrate is exposed to the atmosphere, so impurities and unnecessary impurities cannot be effectively removed. Gas particles, therefore there is a problem of reducing the efficiency of the impurity removal process.

Therefore, in the past, the impurity could not be completely removed or the buck-boost could only be performed repeatedly at a high temperature, but the substrate was processed at a high temperature for a long time for the impurity removal process, because the heat budget exceeded the substrate's acceptable level. There is a problem that the film is damaged.

Therefore, in the conventional substrate processing method, there is a problem that impurities cannot be completely removed when the heat budget is reduced. In the case of performing complete removal of impurities, the quality of the film is damaged due to the excessive heat budget, and there is a problem that the process yield is reduced. The problem of increasing the process time while increasing the rate.

"Problems to be Solved"

In order to solve the above-mentioned problems, the object of the present invention is to provide a substrate processing method, which can reduce the heat balance of the substrate while removing impurities, thereby improving the characteristics of the substrate. "Problem Solving"

The present invention is proposed in order to achieve the above-mentioned purpose of the present invention. The present invention provides a substrate processing method, including: the first step S100 of increasing and decreasing the pressure, performing at least one step of increasing and decreasing the pressure in the chamber for processing the substrate; and the second The second boost step S200, after the first boost step S100, at least one step up and down in the chamber at a temperature higher than the first step S100.

The first step S100 is to keep the first temperature _T1 unchanged; and, wherein the second step S200 can be performed at a second temperature _T2 higher than the first temperature _T1 . deal with.

The first step S100 of step up and down can increase the temperature to the temperature at which the step of step S200 is performed through any one of continuous or step-by-step methods or a combination of these methods.

Before the first boost step S100, a standby step S300 may also be included, the standby step S300 prepares the substrate for substrate processing and maintains the temperature in the chamber at the third temperature T ₃ .

The first temperature _T1 may be the same temperature as the third temperature _T3 .

The first temperature T ₁ may be higher than the third temperature T ₃ and lower than the second temperature T ₂ .

The first step up and down step S100 and the second step up and down step S200 can use the same process gas.

The process gas may include hydrogen (H ₂ ).

The first step S100 of step up and down pressure performs substrate processing using a first gas, and the second step step S200 of step up step up and step down of pressure may use a second gas different from the first gas to perform substrate processing.

The first gas includes hydrogen H ₂ , and the second gas may include at least one of nitrogen N ₂ and oxygen O ₂ .

The first decompression step S100 uses a first gas containing hydrogen _H2 ; the second decompression step S200 includes: an impurity removal step, using the first gas to treat the substrate and the thin film formed on the substrate removing impurities; a stabilizing step, performing stabilization on the film, wherein the stabilizing step may use a second gas containing at least one of nitrogen N ₂ and oxygen O ₂ .

The first boosting step S100 may include: a first boosting step, raising the pressure in the chamber below a first pressure P ₁ higher than atmospheric pressure; After the step, the pressure in the chamber is lowered above a second pressure _P2 lower than the first pressure _P1 .

The first pressurization step may include: a pressurization step of raising the pressure inside the chamber; and a pressure maintaining step of maintaining the pressure inside the chamber raised by the pressurization step.

The first pressure-boosting step S100 takes the first pressure-boosting step and the first pressure-lowering step as a unit cycle, and can be when the first pressure P ₁ is the maximum value and the second pressure P ₂ is the minimum value The unit cycle is executed n times (n≥1) within the pressure range.

The second pressure _P2 may be a pressure higher than or equal to atmospheric pressure.

The second boosting step S200 may include: a second boosting step, raising the pressure in the chamber below a third pressure _P3 higher than atmospheric pressure; After the step, the pressure in said chamber is lowered above a fourth pressure _P4 lower than said third pressure _P3 .

The first pressure _P1 may be the same pressure value as the third pressure _P3 .

The fourth pressure _P4 may be a pressure below atmospheric pressure.

The second depressurization step S200 may include: a temperature raising step, raising the temperature in the chamber to the second temperature T ₂ ; a high temperature maintaining step, maintaining the temperature in the chamber at the second temperature T ₂ : a temperature lowering step, lowering the temperature in the chamber from the second temperature T ₂ to a fourth temperature T ₄ .

The second pressure-boosting step S200 takes the second pressure-boosting step and the second pressure-lowering step as a unit cycle, and the third pressure _P3 is the maximum value and the fourth pressure _P4 is the minimum value The unit cycle is performed n times (n≥1) within a pressure range; at least one unit cycle can be performed in the high temperature maintaining step.

The second depressurization step S200 includes: a temperature raising step, raising the temperature in the chamber to the second temperature T ₂ ; a cooling step, lowering the temperature in the chamber from the second temperature T ₂ to a fourth temperature T _{4 ,} wherein at least one of the step of increasing temperature and the step of decreasing temperature can be performed when the pressure in the strong chamber is above atmospheric pressure.

The fourth temperature _T4 may be the same as or lower than the first temperature _T1 . "The Effects of Invention"

The substrate processing method of the present invention removes impurities inside the reactor and the substrate and removes unnecessary gases adsorbed on the substrate in advance, thereby having the advantage of maximizing the annealing effect in the main process.

In particular, the substrate processing method of the present invention minimizes the process at high temperature, reduces the thermal budget of the substrate, and further has the advantage of minimizing the damage to the film quality.

Accordingly, the substrate processing method of the present invention has the advantages of shortening the process time and increasing the process yield.

In addition, in the substrate processing method of the present invention, the pressure-lifting process is performed before the high-temperature process, thereby increasing the concentration of the reaction gas inside the reactor, thereby having the advantage of maximizing the annealing effect.

Hereinafter, the substrate processing method of the present invention will be described with reference to the accompanying drawings.

As shown in FIG. 1 and FIG. 2, the substrate processing method of the present invention includes: a first boosting step S100, for at least once boosting and reducing the pressure in the chamber for processing the substrate; and a second boosting step S200, in After the first step S100 of step up and down, step up and down the chamber at least once at a temperature higher than that of the step S100.

In addition, the substrate processing method of the present invention may further include a standby step S300 before the first buck-boost step S100, wherein the standby step S300 prepares the substrate for substrate processing, and keeps the temperature in the chamber at third temperature T ₃ .

The substrate described below can be used in a concept that includes both the state before the thin film is formed and the state in which the thin film is deposited.

Here, the substrate to be processed can be understood as including all substrates such as substrates used in display devices such as LEDs, LCDs, and OLEDs, semiconductor substrates, solar cell substrates, and glass substrates.

In addition, the process of processing the substrate may include deposition, etching, annealing, etc., especially may include the process of removing impurities and unnecessary gases from the substrate and the film deposited on the substrate.

In addition, the substrate may be a structure of a non-metal film and a metal film including a dielectric film. In this case, the specific content of the non-metal film and the metal film will be described later.

The chamber may have various configurations as a configuration in which a processing space is formed to process a substrate.

At this time, the chamber may be a structure for performing substrate processing on a single substrate, or as another example, may be a batch structure for stacking a plurality of substrates in a vertical direction to perform substrate processing.

Hereinafter, the description will be based on an embodiment of a batch structure capable of processing multiple substrates at the same time, of course, a single wafer structure in which substrate processing is performed on a single substrate is also applicable.

The chamber may have a single-pipe or double-pipe structure, and may be a structure in which a processing space is formed inside and gas is supplied or discharged through a lower manifold.

At this time, the chamber has an open lower part, and the lower part can be opened and closed through a cover flange or the like, thereby forming a sealed processing space, and substrates can be introduced and exported.

On the other hand, at this time the chamber may be constructed of a metallic material including aluminum, and as another example may be constructed of a quartz material.

The first boosting and boosting step S100 may be a step of boosting and depressurizing the chamber of the configurable substrate at least once.

More specifically, the first step S100 may be a step of removing impurities and unnecessary gases from the substrate at a temperature relatively lower than that of the second step S200 before the second step S200. Thus, the effect of the main process through the second buck-boost step S200 can be maximized.

In particular, the first step S100 is performed at a temperature relatively lower than that of the second step S200, which reduces the thermal budget of the substrate, minimizes damage to the substrate and the film, and also minimizes impurities and Advantages of maximizing unwanted gas removal.

For this reason, the first buck-boost step S100 may be performed before the second buck-boost step S200 as a main process.

More specifically, the first step S100 of step S100 may perform at least one step-up and step-down of the chamber in which the substrate can be placed at a temperature lower than that of the second step S200.

At this time, the first step S100 of step up and down can keep the first temperature _T1 unchanged, and perform boosting and stepping down while maintaining the first temperature _T1 , and then can perform processing on the substrate.

In addition, as another example, the first step S100 is performed at a temperature relatively lower than that of the second step S200, and the temperature is raised to When performing the second step S200 of raising and lowering the temperature, at least one step of increasing and decreasing the voltage may be performed.

That is to say, the first step S100 is to continuously increase the temperature linearly to the temperature at which the second step S200 is performed or stepwise increase the temperature, and at least one step-up and step-down can be performed at the same time.

On the other hand, the first temperature _T1 at which the first step S100 is performed may be lower than the second temperature _T2 at the second step S200. The third temperature _T3 is the same temperature.

That is to say, the first boosting step S100 can be performed at least once at the same temperature as the third temperature _T3 in the standby step S300, which is a process preparation step for substrate processing .

As another example, the first step S100 of step-up and down can certainly set the first temperature T ₁ to be higher than the third temperature T ₃ and lower than the second temperature T ₂ .

On the other hand, the first depressurization step S100 may perform substrate processing with a process gas, and the process gas may include hydrogen H ₂ at this time.

More specifically, the process gas may be a gas containing at least one element of hydrogen (H), oxygen (O), nitrogen (N), chlorine (Cl), and fluorine (F).

That is, the first step S100 of step-up and down pressure supplies hydrogen H ₂ into the chamber to perform processing on the substrate, more specifically, to remove impurities and unnecessary gases on the substrate and the surface of the thin film formed on the substrate.

The specific mechanism for removing impurities at this time has been proposed in the previously published Korean Patent No. 10-2020-0006422A, and structures related thereto may be included.

At this time, the first step S100 of step S100 uses the same process gas as the second step S200 of step S200 to perform substrate processing, and the process gas at this time may be a gas containing hydrogen H ₂ .

On the other hand, as another example, the first depressurization step S100 can perform substrate processing with a process gas different from that of the second depressurization step S200 described later, which will be described later.

The first boosting step S100 may include: a first boosting step, raising the pressure in the chamber below a first pressure _P1 greater than atmospheric pressure; and a first depressurizing step, after the first boosting step, increasing The pressure in the chamber drops above a second pressure _P2 which is lower than the first pressure _P1 .

That is to say, the first step S100 of increasing and decreasing the pressure can be performed at least once in the pressure range where the first pressure P ₁ is the maximum value and the second pressure P ₂ is the minimum value.

At this time, the first boosting step may include: a boosting step of raising the pressure in the chamber; a pressure maintaining step of keeping the pressure in the chamber raised by the boosting step constant.

That is, the first boosting step may include a boosting step of raising the pressure in the chamber to a first pressure _P1 , and may include raising the pressure in the chamber to the first pressure when the first pressure _P1 is reached. P ₁ is a pressure hold step that maintains a constant pre-set time.

On the other hand, unlike the above, as shown in FIG. 1 , the first step of increasing pressure may of course be performed immediately after raising the pressure in the chamber to the first pressure _P1 .

The first boost step S100 takes the first step up step and the first step down step as a unit cycle, and can be executed within the pressure range where the first pressure _P1 is the maximum value and the second pressure _P2 is the minimum value. times (n≥1) said unit cycle.

That is to say, the first boosting step S100 regards the first boosting step and the first stepping down step as a unit cycle, and this unit cycle can be repeatedly executed. During this process, the maximum value and the minimum value of the pressure in each cycle can be set to be the same or different from each other.

More specifically, the unit cycle can be repeatedly executed within the pressure range in which the first pressure _P1 is the maximum value and the second pressure _P2 is the minimum value, and the maximum value and the minimum value of the pressure of each unit cycle are within the above pressure range can be the same or different from each other.

On the other hand, the second pressure _P2 may be greater than or equal to the atmospheric pressure, so that the inside of the chamber is in a vacuum state before the second depressurization step S200, ie, the main process, so as to prevent the inflow of external air.

As an example, the first pressure P ₁ may be a preset pressure value within 2 atm to 5 atm; the second pressure P ₂ is 1 atm, which may be normal pressure (ie atmospheric pressure).

The second boost step S200 may be a step of boosting and reducing the pressure in the chamber at least once after the first boost step S100 at a temperature higher than the first step S100.

At this time, the second boost step S200 is a step of performing substrate processing at a relatively high temperature after the first step S100 , which may be a main process for removing impurities and unnecessary gases from the substrate and film.

The second boost step S200 may perform _substrate processing at a second temperature _T2 higher than the first temperature _T1 , keep the second temperature _T2 constant during the entire step or may include The heating interval in which temperature changes occur before and after.

On the other hand, as mentioned above, the second step S200 may use the same process gas as the first step S100 to perform substrate processing, and the process gas may be a gas containing hydrogen H ₂ .

At this time, the substrates to be processed in the first step S100 of step up and down step S100 and step S200 of step up step S200 using the process gas containing hydrogen _H2 may have a structure of forming metal electrodes, for example, such as TiN, Films of Mo and Ru.

In addition, as another example, the second step S200 of step up and down may use a different process gas from that of the first step S100 to process the substrate.

More specifically, unlike the first depressurization step S100 of performing substrate processing using a first gas containing hydrogen H ₂ , the second depressurization step S200 may use at least one gas containing nitrogen N ₂ and oxygen O ₂ The second gas performs substrate processing.

In this case, the second boosting step S200 does not perform a process of removing impurities from the substrate, but may perform film stabilization for stabilizing the film formed on the substrate. At this time, nitrogen gas containing _N2 may be used. and a second gas of at least one gas in oxygen O ₂ .

In addition, more specifically, at this time, the first gas may be a gas containing at least one element among hydrogen (H), oxygen (O), nitrogen (N), chlorine (Cl), and fluorine (F).

In addition, as another example, the second boosting step S200 may include both the impurity removal step and the stabilization step, the impurity removal step removes impurities from the substrate and the thin film formed on the substrate, and the stabilization step and film stabilization.

At this time, the second step of depressurization and depressurization S200 can use the first gas containing hydrogen _H2 to perform the impurity removal step, and can use the second gas containing at least one gas of nitrogen _N2 and oxygen _O2 to perform the stabilization step .

In this case, the first depressurization step S100 of performing substrate processing using the first gas and the second depressurization step S200 of sequentially using the first gas and the second gas to perform substrate processing may form a dielectric film on the substrate. For example, ZrO ₂ , HfO ₂ , Al ₂ O ₃ can be used.

The stabilization step is to fill oxygen O in the dielectric film such as HfO ₂ or ZrO ₂ at the position where carbon C is removed by hydrogen H ₂ in the impurity removal step, thereby forming a stable dielectric film.

On the other hand, the second boosting step S200 may include: a second boosting step, raising the pressure in the chamber below the third pressure _P3 which is greater than the atmospheric pressure; The pressure in the described chamber that the second pressurization step raises is kept in high pressure state; The second depressurization step, the pressure in the described chamber is dropped to be lower than the described 3rd pressure P ₃ 's after the described high pressure maintaining step The fourth pressure is above _P4 .

That is, similar to the first step S100 of step-up and step-down, the second step S200 of step-up and step-down can be performed at least once in the pressure range where the third pressure _P3 is the maximum value and the fourth pressure _P4 is the minimum value. and buck.

The second step S200 of decompression may include: a second step of increasing pressure, increasing the pressure in the chamber to a third pressure _P3 ; a high pressure maintaining step, when reaching the third pressure _P3 , increasing the pressure in the chamber by The third pressure _P3 remains constant for a preset time.

On the other hand, unlike the above, the second depressurization step may of course be performed immediately after the second pressure increase step of raising the pressure in the chamber to the third pressure _P3 .

The second pressure-boosting step S200 takes the second pressure-boosting step and the second pressure-reducing step as a unit cycle, and can be executed within the pressure range where the third pressure _P3 is the maximum value and the fourth pressure _P4 is the minimum value. times (n≥1) the unit cycle.

That is to say, the second step up and down step S200 takes the second step up step and the second step down step as a unit cycle, which can be repeatedly executed, and in this process, the maximum value and minimum value of the pressure in each cycle can be the same or different from each other. .

More specifically, the unit cycle can be repeatedly executed within the pressure range in which the third pressure _P3 is the maximum value and the fourth pressure _P4 is the minimum value, and the maximum value and minimum value of the pressure of each unit cycle are within the above pressure range may be the same or different from each other.

On the other hand, the third pressure _P3 may have the same pressure value as the first pressure _P1 , so the maximum pressure of the first step S100 and the maximum pressure of the second step S200 may be the same.

The fourth pressure _P4 may be a pressure lower than the atmospheric pressure, and thus, different from the first step S100 of increasing pressure and increasing pressure, the second step S200 of increasing pressure and increasing pressure can lead to a third pressure _P3 relatively higher than normal pressure and a fourth pressure P3 in a vacuum state. Sharp pressure changes between pressure P ₄ .

For this, the third pressure _P3 may have a pressure value ranging from 2 atm to 5 atm, and the fourth pressure _P4 may be a pressure value of a vacuum state of 10 torr lower than normal pressure.

On the other hand, the second depressurization step S200 may include: a temperature raising step, raising the temperature in the chamber from the first temperature T ₁ to a second temperature T ₂ ; a high temperature maintaining step, maintaining the temperature in the chamber at the second temperature The second temperature T ₂ ; the step of lowering the temperature in the chamber from the second temperature T ₂ to the fourth temperature T ₄ .

In this case, the second boosting step S200 combines the second boosting step with the second pressure within a pressure range where the third pressure _P3 is the maximum value and the fourth pressure _P4 is the minimum value. The depressurization step is regarded as a unit cycle, and the unit cycle can be performed n times (n≥1). At least one unit cycle at this time may be performed in the high temperature maintaining step.

That is, at least one unit cycle of the unit cycle consisting of the second pressure increasing step and the second pressure reducing step is performed in the high temperature maintaining step, thereby further promoting a reaction for removing impurities from the substrate.

More specifically, the step-up step and the step-down step are repeatedly performed at a high temperature, thereby increasing the thermal vibration of the atoms, thereby promoting the decomposition of impurity bonds that form weak bonds with the substrate or thin film, and further improving the energy efficiency of hydrogen, such as hydrogen. Combination of the composition of the first gas with impurities on the substrate or film surface.

The step of raising the temperature may be a step of raising the temperature in the chamber from the first temperature _T1 to the second temperature _T2 .

That is, the temperature raising step may raise the temperature in the chamber to create a temperature environment for removing impurities, thereby creating a temperature condition for substrate processing.

At this time, the step of increasing the temperature may be performed under the condition that the pressure in the chamber is above atmospheric pressure in the second step of increasing and decreasing the pressure S200.

The high temperature maintaining step is a step of keeping the temperature in the chamber at the second temperature T ₂ , and the second boosting step and the second depressurizing step are performed, thereby effectively removing impurities and unnecessary gases from the substrate and film.

The step of lowering the temperature may be a step of lowering the temperature in the chamber from the second temperature _T2 to the fourth temperature _T4 .

At this time, the fourth temperature _T4 may be the same temperature as the chamber temperature applicable in the standby step S300 described later, that is, the third temperature _T3 . As another example, it may be lower than the third temperature _T3 . The temperature, as described above, may be the same temperature as the first temperature _T1 or may be a different temperature according to subsequent processes.

On the other hand, the step of lowering the temperature may be performed during any one of the second boosting step and the high pressure maintaining step, more specifically, the pressure in the chamber is maintained at a high pressure state greater than atmospheric pressure, that is, the first During the period of pressure P ₁ , the temperature can be lowered from the second temperature T ₂ to the fourth temperature T ₄ .

More specifically, conventionally, when the pressure is lower than atmospheric pressure in a state where _O2 remains in the chamber, if the temperature inside the chamber rises or the temperature inside the chamber falls, there is a depletion of _O2 remaining inside the chamber. The problem of the gas reacting with the film.

In order to improve this problem, the temperature raising step and the temperature lowering step can be performed when the pressure in the chamber is above atmospheric pressure in the second decompression step S200, more preferably, they can be performed during the high pressure maintaining step of maintaining a high pressure state.

More specifically, the temperature rise start time, the temperature rise end time, the temperature drop start time, and the temperature drop end time of the temperature drop step can be specified using the time points at which the deterioration of the film can be minimized.

For example, the temperature raising step can raise the temperature environment from the first temperature T1 to the second temperature from the preset temperature raising start time point to the temperature raising end time point during or after _the second pressure raising step is executed. temperature T ₂ .

At this time, the temperature rise start time point and temperature rise end time point in the temperature rise step can be set at the start time point of the second pressure increase step (the time point when the pressure starts to be raised to the third pressure _P3 ) and the second drop pressure step. Between the starting time point of the pressure step (the time point when the pressure is reduced to the fourth pressure _P4 ).

As an example, the temperature raising step may raise the temperature from a preset temperature raising start time point to a temperature raising end time point during execution of the second pressure raising step.

Here, as for the temperature raising start time point, any time point can be set as long as it is after the start time point of the second pressurization step, but it is preferably set so that the inside of the chamber can fully obtain _O2 gas. The time point after injecting a predetermined amount of the first gas or the second gas to raise the process pressure above the atmospheric pressure.

Furthermore, at this time, the temperature rise start time point and the temperature rise end time point are preferably set in the high pressure maintenance step, the high pressure maintenance step is the process pressure in the chamber is increased to the third pressure _P3 level through the second pressure increase step Maintain pressure under full high pressure.

Same as the above-mentioned temperature raising step, the temperature lowering step can lower the temperature environment to the fourth temperature _T4 from the preset temperature drop start time point to the temperature drop end time point during or after the second pressure increase step is executed. .

At this time, the temperature drop start time point and the temperature drop end time point in the temperature drop step can be set at the start time point of the second pressure increase step (the time point when the pressure is raised to the third pressure _P3 ) and the second pressure drop step. Between the start time point of the step (the time point when the pressure is reduced to the fourth pressure _P4 ).

As an example, in the temperature lowering step, the temperature may be lowered from a preset temperature lowering start time point to a temperature lowering end time point during the execution of any one of the second pressurization step and the high pressure maintaining step.

Here, the temperature drop start time point can be set at any time point as long as it is after the start time point of the pressurization step, but it is preferably set so that the inside of the chamber can be fully protected in _O2 gas And the time point after injecting a predetermined amount of the first gas or the second gas to increase the process pressure to above the atmospheric pressure, as the same situation, before the end time point of the depressurization step, can be set as the process pressure drop inside the chamber The point in time before the pressure falls below atmospheric pressure.

Furthermore, at this time, the temperature drop start time point and the temperature drop end time point are preferably set in the high pressure maintenance step, the high pressure maintenance step is that the process pressure in the chamber is boosted to the third pressure _P3 level through the second boost step The pressure is maintained under the state of full high pressure.

On the other hand, as an example, the second boosting step and the second depressurizing step are regarded as a unit cycle, and when the unit cycle is repeatedly executed n times, the cooling step can be performed in the last nth high-pressure maintaining step during execution.

That is, during the period from the first unit cycle repeated to the n-1th time, the temperature in the chamber can be maintained at the second temperature T ₂ , and for the temperature conditions of the subsequent process, the temperature drop step can be n times are performed during the pressure hold step.

Accordingly, the sheet resistance R _S of the processed substrate is reduced, thereby achieving the effect of high-quality substrate processing.

On the other hand, the above-mentioned fourth temperature _T4 may be the same as or lower than the first temperature _T1 .

The standby step S300 may be a step of preparing the substrate for substrate processing before the first buck-boost step S100.

For example, as shown in FIG. 2 , the standby step S300 may be a step of maintaining the temperature in the chamber at the third temperature _T3 to prepare for substrate processing before the first step S100 of step-up and down.

_At this time, as described above, the third temperature _T3 may be the same as or lower than the first temperature _T1 .

In the case that the third temperature _T3 is lower than the first temperature _T1 , the standby step S300 may include: a temperature maintaining step of maintaining the temperature in the chamber at the third temperature T in the standby state of preparing for substrate processing ₃ ; a temperature raising step, after the temperature maintaining step, the temperature in the chamber is raised to a first temperature T ₁ , so as to perform a first step of step S100 of increasing pressure and increasing pressure.

On the other hand, the effects of the present invention will be described in detail below with reference to FIG. 4 .

FIG. 4 is a graph comparing experimental results of substrate processing performed by a conventional substrate processing method and the substrate processing method of the present invention. Experiments were performed under the following conditions.

In the conventional substrate processing method, the temperature in the chamber is kept at 300°C in the standby step S300, and the process corresponding to the second step S200 of the present invention as the main process is repeatedly executed at 400°C for three times. cycles.

In the substrate processing method of the present invention, in the standby step S300, the temperature in the chamber is kept at 300°C, and the first step S100 is performed at the same 300°C, and then the second step S200 is performed at 400°C. One cycle is performed, and at this time, the first step S100 of step up and down and the second step S200 of step up and down of step S200 all use hydrogen H ₂ .

As a result, when the substrate processing method of the present invention was performed, it was confirmed that the sheet resistance R _s was improved, and thus the substrate characteristics were improved. In particular, the effect of reducing the heat budget by reducing the heat budget was confirmed. The substrate processing time is confirmed at the highest temperature in the process, thereby reducing the damage to the substrate and the film while improving the sheet resistance R _s .

The above description is only a relevant description of a part of the preferred embodiments that can be realized by the present invention. As everyone knows, it should not be limited to the above-mentioned embodiments to explain the scope of the present invention. The technical ideas and fundamental technologies of the present invention described above The ideas are all included within the scope of the present invention.

S100: first step up and down step S200: second step up and down step S300: standby step _P1 : first pressure _P2 : second pressure _P3 : third pressure _P4 : fourth pressure _T1 : first temperature _T2 : second temperature T ₃ : third temperature T ₄ : fourth temperature

1 is a flow chart showing a substrate processing method of the present invention; FIG. 2 is a graph showing the substrate processing method of FIG. 1; 3 is a graph showing temperature changes of an embodiment of the substrate processing method of FIG. 1; and FIG. 4 is a graph showing the effect of the substrate processing method of FIG. 1 .

S100: the first buck-boost step

S200: the second boost step

S300:Standby steps

P ₁ : first pressure

P ₂ : Second pressure

P ₃ : third pressure

P ₄ : Fourth pressure

T ₁ : first temperature

T ₂ : second temperature

T ₃ : the third temperature

Claims (22)

A substrate processing method, comprising: The first boosting and boosting step (S100), performing at least one boosting and depressurization in the chamber for processing the substrate; and In the second boost step (S200), after the first boost step (S100), at least one boost and drop is performed in the chamber at a temperature higher than that of the first step (S100). pressure. The substrate processing method according to claim 1, wherein the first step (S100) of step-up and step-down is to keep the first temperature (T ₁ ) constant; and wherein the second step of step-up and step-down (S200) is Substrate processing is performed at a second temperature (T ₂ ) higher than said first temperature (T ₁ ). The substrate processing method according to claim 1, wherein the first step of stepping up and down (S100) raises the temperature to the point where the second step of stepping up and down is carried out in any one of continuous or stepwise ways or a combination of these ways. The temperature of the pressing step (S200). The substrate processing method according to claim 2, wherein, before the first step of step-up and down (S100), a standby step (S300) is included, and the standby step (S300) prepares the substrate for substrate processing and The temperature in the chamber is maintained at a third temperature (T ₃ ). The substrate processing method according to claim 4, wherein the first temperature (T ₁ ) is the same temperature as the third temperature (T ₃ ). The substrate processing method according to claim 4, wherein the first temperature (T ₁ ) is higher than the third temperature (T ₃ ) and lower than the second temperature (T ₂ ). The substrate processing method according to claim 1, wherein, the first step ( S100 ) of step up and down and the step of step ( S200 ) use the same process gas. The substrate processing method according to claim 7, wherein the process gas contains hydrogen (H ₂ ). The substrate processing method according to claim 1, wherein the first step (S100) of step up and down pressure is used to perform substrate processing using a first gas; and Wherein, the second step (S200) of boosting and depressurizing uses a second gas different from the first gas to perform substrate processing. The substrate processing method according to claim 9, wherein the first gas includes hydrogen (H ₂ ), wherein the second gas includes at least one of nitrogen (N ₂ ) and oxygen (O ₂ ); and Wherein, the second step (S200) of boosting and depressurizing uses the second gas to stabilize the thin film formed on the substrate. The substrate processing method according to claim 1, wherein the first step (S100) of decompression and decompression uses a first gas containing hydrogen (H ₂ ); wherein the second decompression and decompression step (S200) includes: impurities a removing step of using the first gas to remove impurities from the substrate and a thin film formed on the substrate; and a stabilizing step of stabilizing the thin film, wherein the stabilizing step uses a gas containing nitrogen (N ₂ ) and a second gas of at least one of oxygen (O ₂ ). The substrate processing method according to claim 1, wherein the first step of increasing pressure (S100) includes: a first step of increasing pressure, increasing the pressure in the chamber to a first pressure (P ₁ ) or lower; and a first depressurization step, after the first boost step, the pressure in the chamber is lowered to above a second pressure (P ₂ ) lower than the first pressure (P ₁ ). The substrate processing method according to claim 12, wherein the first boosting step comprises: a pressurization step, increasing the pressure in the chamber; and A pressure maintaining step of maintaining constant the pressure in the chamber raised by the pressure increasing step. The substrate processing method according to claim 12, wherein, in the first step of increasing pressure (S100), the first step of increasing pressure and the step of reducing pressure are regarded as a unit cycle, at the first pressure (P ₁ ) is the maximum value and the second pressure (P ₂ ) is the minimum value and the unit cycle is executed n times (n≥1). The substrate processing method according to claim 12, wherein the second pressure (P ₂ ) is a pressure higher than or equal to atmospheric pressure. The substrate processing method according to claim 12, wherein the second step of increasing the pressure (S200) includes: a second step of increasing the pressure, increasing the pressure in the chamber to a third pressure (P ₃ ) or lower; and a second depressurization step, after the second boost step, the pressure in the chamber is lowered to above a fourth pressure (P ₄ ) lower than the third pressure (P ₃ ). The substrate processing method according to claim 16, wherein the first pressure (P ₁ ) is the same pressure value as the third pressure (P ₃ ). The substrate processing method according to claim 16, wherein the fourth pressure (P ₄ ) is a pressure lower than atmospheric pressure. The substrate processing method according to claim 16, wherein the second step of stepping up and down (S200) comprises: a step of raising the temperature in the chamber to the second temperature (T ₂ ); maintaining a high temperature a step of maintaining the temperature in the chamber at the second temperature (T ₂ ); and a cooling step of lowering the temperature in the chamber from the second temperature (T ₂ ) to a fourth temperature (T ₄ ). The substrate processing method according to claim 19, wherein, in the second boosting step (S200), the second boosting step and the second depressurizing step are taken as a unit cycle, and at the third pressure (P ₃ ) is the maximum value and the fourth pressure (P ₄ ) is the minimum value and the unit cycle is executed n times (n≥1), wherein at least one unit cycle is in the high temperature maintaining step implement. The substrate processing method according to claim 16, wherein the second step (S200) of stepping up and down pressure comprises: a step of raising the temperature in the chamber to the second temperature (T ₂ ); and lowering the temperature step, lowering the temperature in the chamber from the second temperature (T ₂ ) to a fourth temperature (T ₄ ), wherein at least one of the temperature raising step and the temperature lowering step is in the chamber Execute when the pressure is above atmospheric pressure. The substrate processing method according to claim 19 or 21, wherein the fourth temperature (T ₄ ) is the same as or lower than the first temperature (T ₁ ).