TW202312476A - 光檢測元件及影像感測器 - Google Patents

光檢測元件及影像感測器 Download PDF

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Publication number
TW202312476A
TW202312476A TW111127664A TW111127664A TW202312476A TW 202312476 A TW202312476 A TW 202312476A TW 111127664 A TW111127664 A TW 111127664A TW 111127664 A TW111127664 A TW 111127664A TW 202312476 A TW202312476 A TW 202312476A
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TW
Taiwan
Prior art keywords
atoms
group
quantum dots
semiconductor quantum
light
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Application number
TW111127664A
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English (en)
Chinese (zh)
Inventor
小野雅司
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日商富士軟片股份有限公司
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Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202312476A publication Critical patent/TW202312476A/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW111127664A 2021-07-29 2022-07-25 光檢測元件及影像感測器 TW202312476A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-124050 2021-07-29
JP2021124050 2021-07-29

Publications (1)

Publication Number Publication Date
TW202312476A true TW202312476A (zh) 2023-03-16

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Family Applications (1)

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TW111127664A TW202312476A (zh) 2021-07-29 2022-07-25 光檢測元件及影像感測器

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JP (1) JPWO2023008353A1 (https=)
TW (1) TW202312476A (https=)
WO (1) WO2023008353A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3852151A4 (en) * 2018-09-12 2022-06-15 NS Materials Inc. INFRARED SENSOR AND METHOD OF MANUFACTURE THEREOF
JPWO2021002112A1 (https=) * 2019-07-01 2021-01-07
WO2021029389A1 (ja) * 2019-08-15 2021-02-18 Nsマテリアルズ株式会社 量子ドット、及び、その製造方法
CN110911568A (zh) * 2019-12-03 2020-03-24 武汉大学 一种银铋硫薄膜光电探测器及其制备方法

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JPWO2023008353A1 (https=) 2023-02-02
WO2023008353A1 (ja) 2023-02-02

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