JPWO2021002112A1 - - Google Patents

Info

Publication number
JPWO2021002112A1
JPWO2021002112A1 JP2021529913A JP2021529913A JPWO2021002112A1 JP WO2021002112 A1 JPWO2021002112 A1 JP WO2021002112A1 JP 2021529913 A JP2021529913 A JP 2021529913A JP 2021529913 A JP2021529913 A JP 2021529913A JP WO2021002112 A1 JPWO2021002112 A1 JP WO2021002112A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021529913A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021002112A1 publication Critical patent/JPWO2021002112A1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/661—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/87—Light-trapping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
JP2021529913A 2019-07-01 2020-05-22 Pending JPWO2021002112A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019123103 2019-07-01
PCT/JP2020/020211 WO2021002112A1 (ja) 2019-07-01 2020-05-22 光検出素子およびイメージセンサ

Publications (1)

Publication Number Publication Date
JPWO2021002112A1 true JPWO2021002112A1 (https=) 2021-01-07

Family

ID=74101019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021529913A Pending JPWO2021002112A1 (https=) 2019-07-01 2020-05-22

Country Status (4)

Country Link
US (1) US12415953B2 (https=)
JP (1) JPWO2021002112A1 (https=)
TW (1) TW202114936A (https=)
WO (1) WO2021002112A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115537072B (zh) * 2021-06-29 2024-04-02 广东聚华印刷显示技术有限公司 量子点墨水、量子点发光二极管及其制备方法、显示装置
TW202312476A (zh) * 2021-07-29 2023-03-16 日商富士軟片股份有限公司 光檢測元件及影像感測器
CN116349426A (zh) * 2021-08-27 2023-06-27 京东方科技集团股份有限公司 发光器件及制备方法、显示面板和显示装置
WO2023085180A1 (ja) * 2021-11-10 2023-05-19 富士フイルム株式会社 半導体膜、半導体膜の製造方法、光検出素子およびイメージセンサ
FR3132790A1 (fr) * 2022-02-15 2023-08-18 Isorg Dispositif d'acquisition d'images
CN115117245B (zh) * 2022-05-20 2025-11-21 华中科技大学 量子点光电探测器及其制备方法
CN118039713B (zh) * 2024-04-09 2024-08-02 中山大学 一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法
WO2025248782A1 (ja) * 2024-05-31 2025-12-04 ソニーセミコンダクタソリューションズ株式会社 光検出素子、光検出装置および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090152664A1 (en) * 2007-04-18 2009-06-18 Ethan Jacob Dukenfield Klem Materials, Systems and Methods for Optoelectronic Devices
JP2014093327A (ja) * 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
WO2017054887A1 (en) * 2015-10-02 2017-04-06 Toyota Motor Europe All quantum dot based optoelectronic device
WO2017191356A1 (en) * 2016-05-03 2017-11-09 Nokia Technologies Oy An apparatus and method of forming an apparatus comprising a graphene field effect transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100943839B1 (ko) * 2007-10-31 2010-02-24 한국과학기술연구원 불규칙 표면구조의 우선 도입에 의해 고수율의바이오-이미지용 나노입자를 제조하는 방법
US9513406B2 (en) * 2013-07-17 2016-12-06 University Of Oregon Soluble functionalized nanoparticles for use in optical materials
ES2688518T3 (es) * 2014-06-03 2018-11-05 Karlsruher Institut für Technologie Superficies superhidrófobas reactivas, superficies superhidrófobas pautadas, métodos para producirlas y uso de las superficies superhidrófobas pautadas
US10062861B2 (en) * 2015-02-24 2018-08-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, electronic device, and lighting device
CN108264895B (zh) * 2018-03-09 2021-03-12 京东方科技集团股份有限公司 量子点配体交换的方法及其装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090152664A1 (en) * 2007-04-18 2009-06-18 Ethan Jacob Dukenfield Klem Materials, Systems and Methods for Optoelectronic Devices
JP2014093327A (ja) * 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
WO2017054887A1 (en) * 2015-10-02 2017-04-06 Toyota Motor Europe All quantum dot based optoelectronic device
WO2017191356A1 (en) * 2016-05-03 2017-11-09 Nokia Technologies Oy An apparatus and method of forming an apparatus comprising a graphene field effect transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PRADHAN, SANTANU ET AL.: "Trap-State Suppression and Improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic", SMALL, vol. 13, JPN6020025377, 2017, pages 1700598 - 1, ISSN: 0005144905 *

Also Published As

Publication number Publication date
US20220077238A1 (en) 2022-03-10
WO2021002112A1 (ja) 2021-01-07
US12415953B2 (en) 2025-09-16
TW202114936A (zh) 2021-04-16

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