JPWO2023008353A1 - - Google Patents
Info
- Publication number
- JPWO2023008353A1 JPWO2023008353A1 JP2023538505A JP2023538505A JPWO2023008353A1 JP WO2023008353 A1 JPWO2023008353 A1 JP WO2023008353A1 JP 2023538505 A JP2023538505 A JP 2023538505A JP 2023538505 A JP2023538505 A JP 2023538505A JP WO2023008353 A1 JPWO2023008353 A1 JP WO2023008353A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021124050 | 2021-07-29 | ||
| PCT/JP2022/028564 WO2023008353A1 (ja) | 2021-07-29 | 2022-07-25 | 光検出素子およびイメージセンサ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023008353A1 true JPWO2023008353A1 (https=) | 2023-02-02 |
Family
ID=85086912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023538505A Abandoned JPWO2023008353A1 (https=) | 2021-07-29 | 2022-07-25 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023008353A1 (https=) |
| TW (1) | TW202312476A (https=) |
| WO (1) | WO2023008353A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020054764A1 (ja) * | 2018-09-12 | 2020-03-19 | Ｎｓマテリアルズ株式会社 | 赤外線センサ及びその製造方法 |
| CN110911568A (zh) * | 2019-12-03 | 2020-03-24 | 武汉大学 | 一种银铋硫薄膜光电探测器及其制备方法 |
| WO2021002112A1 (ja) * | 2019-07-01 | 2021-01-07 | 富士フイルム株式会社 | 光検出素子およびイメージセンサ |
| WO2021029389A1 (ja) * | 2019-08-15 | 2021-02-18 | Ｎｓマテリアルズ株式会社 | 量子ドット、及び、その製造方法 |
-
2022
- 2022-07-25 TW TW111127664A patent/TW202312476A/zh unknown
- 2022-07-25 WO PCT/JP2022/028564 patent/WO2023008353A1/ja not_active Ceased
- 2022-07-25 JP JP2023538505A patent/JPWO2023008353A1/ja not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020054764A1 (ja) * | 2018-09-12 | 2020-03-19 | Ｎｓマテリアルズ株式会社 | 赤外線センサ及びその製造方法 |
| WO2021002112A1 (ja) * | 2019-07-01 | 2021-01-07 | 富士フイルム株式会社 | 光検出素子およびイメージセンサ |
| WO2021029389A1 (ja) * | 2019-08-15 | 2021-02-18 | Ｎｓマテリアルズ株式会社 | 量子ドット、及び、その製造方法 |
| CN110911568A (zh) * | 2019-12-03 | 2020-03-24 | 武汉大学 | 一种银铋硫薄膜光电探测器及其制备方法 |
Non-Patent Citations (3)
| Title |
|---|
| EMBDEN, JOEL VAN ET AL.: ""Ultrathin Solar Absorber Layers of Silver Bismuth Sulfide from Molecular Precursors"", ACS APPLIED MATERIALS & INTERFACES, vol. 11, JPN6022009339, 26 April 2019 (2019-04-26), pages 16674 - 16682, ISSN: 0005781659 * |
| JIANG, LI ET AL.: ""Solution-processed AgBiS2 photodetectors from molecular precursors"", JOURNAL OF MATERIALS CHEMISTRY C, vol. 8, JPN6021042275, 6 January 2020 (2020-01-06), pages 2436 - 2441, ISSN: 0005781658 * |
| OEBERG, VIKTOR A. ET AL.: ""Cubic AgBiS2 Colloidal Nanocrystals for Solar Cells"", ACS APPLIED NANO MATERIALS, vol. 3, JPN6022042999, 8 April 2020 (2020-04-08), pages 4014 - 4024, ISSN: 0005781657 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202312476A (zh) | 2023-03-16 |
| WO2023008353A1 (ja) | 2023-02-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250407 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20260127 |
|
| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20260130 |