TW202300721A - Crystal growth diameter control method, device and equipment and computer storage medium - Google Patents

Abstract

The embodiment of the invention discloses a crystal growth diameter control method, device and equipment and a computer storage medium. The control method comprises the following steps that: a change value of a liquid level distance and a corresponding crystal growth diameter deviation value are acquired in advance in an equal-diameter growth stage, and a corresponding relation between the change value of the liquid level distance and the crystal growth diameter deviation value is determined; according to the corresponding relation and the change speed of the liquid level distance, the target position of an automatic diameter control ADC device is determined, and the ADC device is horizontally moved to the target position; and after the ADC device moves to the target position, the brightness value received by an optical pyrometer sensor is adjusted to be a target brightness value, wherein the target brightness value is used for representing that the growth diameter of a crystal is a target growth diameter.

Description

Crystal growth diameter control method, device, equipment and computer storage medium

The implementation of the present invention belongs to the technical field of crystal growth, and in particular relates to a method, device, equipment and computer storage medium for controlling the diameter of crystal growth.

Electronic grade single crystal silicon crystal is a kind of semiconductor material, which is generally used in the manufacture of integrated circuits and other electronic components. At present, the common growth method of single crystal silicon crystal is the Czochralski method, or called the Czochralski method, that is, in the single crystal furnace, the seed crystal is immersed in the molten silicon liquid contained in the crucible. In the process, the seed crystal is pulled while rotating the seed crystal and the crucible, so as to sequentially carry out technical operations such as seeding, shouldering, shoulder turning, equal diameter and finishing at the end of the seed crystal to obtain a single crystal silicon crystal. Among them, the equal-diameter stage is an extremely important technical process in the growth process of single crystal silicon crystal, and it is also a key process to ensure the quality of single crystal silicon crystal.

At present, in the equal-diameter stage, an automatic crystal growth diameter control device (Automatic Diameter Control, ADC) is used to automatically control the growth diameter of the crystal. The ADC device mainly uses an optical pyrometer sensor and a Charge Coupled Device (CCD) camera to monitor the growth diameter of a single crystal silicon crystal: it assumes that the liquid level of the molten silicon liquid will not change at a certain position. During the crystal growth process, the optical pyrometer sensor receives the thermal radiation of the molten silicon liquid-solid-liquid interface and outputs the corresponding brightness value, through which the growth diameter of the single crystal silicon crystal can be obtained, thereby achieving real-time The purpose of monitoring the growth diameter of crystals. However, during the growth process of the single crystal silicon crystal, the position of the molten silicon liquid level will change, thus affecting the monitoring accuracy of the crystal growth diameter by the ADC device, and finally affecting the quality of the single crystal silicon crystal.

In view of this, the embodiments of the present invention expect to provide a crystal growth diameter control method, device, equipment and computer storage medium; which can ensure the stability and accuracy of the crystal growth diameter during the crystal growth process, and can also improve the crystal quality.

The technical scheme of the embodiment of the present invention is realized like this: In a first aspect, an embodiment of the present invention provides a method for controlling a crystal growth diameter, the control method comprising: Obtaining the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value in advance in the equal diameter growth stage, and determining the corresponding relationship between the change value of the liquid level spacing and the crystal growth diameter deviation value; Determine the target position of the diameter automatic control device ADC according to the corresponding relationship and the change speed of the liquid level element spacing, and horizontally move the ADC device to the target position; After the ADC device moves to the target position, adjust the brightness value received by the optical pyrometer sensor to the target brightness value; Wherein, the target brightness value is used to represent that the growth diameter of the crystal is the target growth diameter.

In the second aspect, an embodiment of the present invention provides a crystal growth diameter control device, the control device includes: an acquisition part, a moving part and an adjustment part; wherein, The acquisition part is configured to pre-acquire the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value in the equal diameter growth stage, and determine the corresponding relationship between the change value of the liquid level spacing and the crystal growth diameter deviation value; The moving part is configured to determine the target position of the automatic diameter control device ADC and horizontally move the ADC device to the target position according to the corresponding relationship and the change speed of the distance between the liquid level elements; The adjustment part is configured to adjust the luminance value received by the optical pyrometer sensor to a target luminance value after the ADC device moves to the target position; wherein, the target luminance value is used to represent that the growth diameter of the crystal is the target growth diameter.

In the third aspect, the embodiment of the present invention provides a crystal growth diameter control device, which is applied to a single crystal furnace, and the device includes: an optical pyrometer sensor, a CCD camera, a memory, and a processor; wherein, The CCD camera is used to monitor the change value of the liquid level spacing ΔX and the corresponding deviation value ΔD of the crystal growth diameter; The memory is used to store computer programs that can run on the processor; The processor is configured to perform the following steps when running the computer program: Obtaining the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value in advance in the equal diameter growth stage, and determining the corresponding relationship between the change value of the liquid level spacing and the crystal growth diameter deviation value; Determine the target position of the diameter automatic control device ADC according to the corresponding relationship and the change speed of the liquid level element spacing, and horizontally move the ADC device to the target position; After the ADC device moves to the target position, adjust the brightness value received by the optical pyrometer sensor to the target brightness value; Wherein, the target brightness value is used to represent that the growth diameter of the crystal is the target growth diameter.

In a fourth aspect, an embodiment of the present invention provides a computer storage medium, the computer storage medium stores a program for controlling the crystal growth diameter, and when the program for controlling the crystal growth diameter is executed by at least one processor, the first aspect of the crystal is realized. The steps of the method of controlling the growth diameter.

Embodiments of the present invention provide a crystal growth diameter control method, device, equipment, and computer storage medium; the corresponding relationship between the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value, and the distance between the liquid level elements can be used. Change speed, determine the target position of the horizontal movement of the ADC device and move the ADC device to the above target position, and at the same time adjust the brightness value received by the optical pyrometer sensor in the ADC device to ensure that the changed solid-liquid interface is reflected to the optical high temperature The brightness value of the meter sensor will not change, and then the crystal with stable growth diameter can be prepared.

In order for Ligui examiners to understand the technical characteristics, content and advantages of the present invention and the effects it can achieve, the present invention is hereby combined with the accompanying drawings and appendices, and is described in detail in the form of embodiments as follows, and the drawings used therein , the purpose of which is only for illustration and auxiliary instructions, and not necessarily the true proportion and precise configuration of the present invention after implementation, so it should not be interpreted based on the proportion and configuration relationship of the attached drawings, and limit the application of the present invention in actual implementation The scope is described first.

In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical ", "horizontal", "top", "bottom", "inner", "outer" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying Describes, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and operate in a specific orientation, and therefore should not be construed as limiting the invention.

In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of said features. In the description of the embodiments of the present invention, "plurality" means two or more, unless otherwise specifically defined.

In the embodiments of the present invention, terms such as "installation", "connection", "connection" and "fixation" should be interpreted in a broad sense unless otherwise clearly specified and limited. Disassembled connection, or integration; it can be mechanical connection or electrical connection; it can be direct connection or indirect connection through an intermediary, and it can be the internal communication of two components or the interaction relationship between two components. Those with ordinary knowledge in the art can understand the specific meanings of the above terms in the embodiments of the present invention according to specific situations.

Referring to Fig. 1, it shows a single crystal furnace 1 capable of realizing the technical solution of the embodiment of the present invention, the single crystal furnace 1 may include: a furnace body 10, a heating device and a pulling device are arranged in the furnace body 10; the heating device includes Graphite crucible 20, quartz crucible 30, heater 40, etc., wherein, quartz crucible 30 is used to contain silicon raw material, such as polysilicon. The silicon raw material is heated and melted in the quartz crucible 30 into molten silicon liquid MS. The graphite crucible 20 is wrapped on the outside of the quartz crucible 30 to provide support for the quartz crucible 30 during the heating process. The heater 40 is arranged on the outside of the graphite crucible 20 . A heat shield 50 is arranged above the quartz crucible 30, and the heat shield 50 has an inverted conical shield extending downwards around the growth area of the monocrystalline silicon crystal, which can block the growth of the monocrystalline silicon from the heater 40 and the high-temperature molten silicon liquid MS. Direct thermal radiation of the crystal to reduce the temperature of the single crystal silicon crystal. At the same time, the heat shield 50 can also make the downward blowing protective gas concentrated and sprayed directly near the growth interface, further enhancing the heat dissipation of the single crystal silicon crystal.

The pulling device comprises a vertically arranged seed crystal cable 60 and a crucible shaft 70, the seed crystal cable 60 is arranged above the quartz crucible 30, the crucible shaft 70 is arranged at the bottom of the graphite crucible 20, and the bottom of the seed crystal cable 60 is installed with The top of the seed crystal is connected to the seed crystal driving device, so that it can slowly lift the seed crystal while rotating; the bottom of the crucible shaft 70 is provided with a crucible shaft driving device, so that the crucible shaft 70 can drive the graphite crucible 20 to rotate.

It should be noted that the structure of the single crystal furnace 1 shown in FIG. 1 is not specifically limited. In order to clearly illustrate the technical solution of the embodiment of the present invention, the necessary components for preparing a single crystal silicon crystal by the Czochralski method are omitted. other parts. Based on the single crystal furnace 1 shown in FIG. 1 , an observation window 80 may also be provided above the furnace body 10 for the ADC device 2 to monitor the growth diameter of the crystal.

When using the above-mentioned single crystal furnace 1 to prepare crystals, in the conventional technical scheme, it is assumed that the position of the liquid level remains unchanged. Therefore, the ADC device 2 will be fixed at a certain position during the equal-diameter growth stage of the crystal and remain unchanged. The growth diameter of the crystal is fed back by the optical pyrometer sensor 21 receiving the brightness value corresponding to the thermal radiation of the meniscus. However, in the actual equal-diameter growth stage, as the crystal continues to grow, the liquid level position of the molten silicon liquid changes at any time, and the crystal growth diameter corresponding to different liquid level positions will also deviate. In the diameter growth stage, if the position of the ADC device 2 is kept fixed, it will affect the control accuracy of the crystal growth diameter.

It can be understood that in actual implementation, the ADC device 2 mainly uses the optical pyrometer sensor 21 to receive the heat radiation reflected by the liquid-solid-liquid interface of molten silicon to obtain the corresponding brightness value. When the brightness value obtained is a fixed value, it means that the growth diameter of the crystal remains at a stable value. For example, when the obtained brightness value is 2000, it can be considered that the growth diameter of the crystal is 300 mm. Therefore, in the embodiment of the present invention, in order to control the growth diameter of the crystal to be the target growth diameter D ₀ during the equal-diameter growth process of the crystal, the thermal radiation of the meniscus received by the optical pyrometer sensor 21 can be controlled immediately to correspond to The luminance value of is stable at the target luminance value, that is, when the luminance value is the target luminance value, it means that the growth diameter of the crystal is the target growth diameter D ₀ , and the obtained crystal is the target crystal.

At the same time, the CCD camera 22 in the ADC device 2 mainly monitors the liquid level change of the molten silicon liquid MS and the deviation of the growth diameter of the crystal during the growth process of the crystal.

It should be noted that, in the embodiment of the present invention, the liquid level position of the molten silicon liquid refers to the distance from the liquid surface of the molten silicon liquid to the bottom of the guide tube (not shown in the figure), that is, the liquid level distance.

Therefore, based on the content described above, referring to FIG. 2 , it shows a method for controlling the crystal growth diameter provided by an embodiment of the present invention. The method specifically includes: S201. Pre-acquire the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value in the equal diameter growth stage, and determine the corresponding relationship between the change value of the liquid level spacing and the crystal growth diameter deviation value; S202. Determine the target position of the automatic diameter control device ADC and horizontally move the ADC device to the target position according to the corresponding relationship and the change speed of the liquid level element spacing; S203. After the ADC device moves to the target position, adjust the brightness value received by the optical pyrometer sensor to the target brightness value; Wherein, the target brightness value is used to represent that the growth diameter of the crystal is the target growth diameter.

For the above technical solution, step S201 can be regarded as a process of pre-obtaining the corresponding relationship between the change value of the liquid level element spacing and the deviation value of the crystal growth diameter in the equal diameter growth stage. Steps S202 and S203 can be considered as receiving by adjusting the optical pyrometer sensor 21 after moving the ADC device 2 horizontally so that the ADC device 2 remains under the same working conditions during the equal-diameter growth process of the crystal. Brightness value to ensure the process of obtaining crystals with the target growth diameter.

It should be noted that the above-mentioned same working conditions mean that the included angle between the central axis of the ADC device 2 and the target crystal is always constant. In this case, it can be guaranteed that the ADC device 2 is always monitoring the growth diameter of the crystal at the same angle as the included angle with the target crystal, thereby ensuring that the optical pyrometer sensor 21 receives the same angle. The thermal radiation of the lunar surface is used to eliminate the influence of the ADC device 2 on the monitoring results after moving.

For the technical solution shown in Figure 2, the target position of the level movement of the ADC device 2 can be determined through the pre-obtained corresponding relationship and the pre-set liquid level change speed, and then the brightness value received by the optical pyrometer sensor can be adjusted to reach the target position. Brightness value to ensure that crystals with the target growth diameter are obtained. Based on this, compared with the current related technical solutions, the embodiment of the present invention can eliminate the deviation of the crystal growth diameter caused by the change of the liquid level element spacing, so as to obtain a stable and accurate crystal growth diameter.

For the technical solution shown in Figure 2, in some examples, the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value are obtained in advance during the equal diameter growth stage, and the change value of the liquid level spacing and the crystal growth diameter are determined Correspondence between deviation values, including: In the equal-diameter growth stage of the crystal, the change value ΔX of the liquid level spacing and the deviation value ΔD of the crystal growth diameter are obtained by the CCD camera; The included angle between the ADC device and the target crystal is obtained according to the change value ΔX of the liquid level element spacing and the corresponding crystal growth diameter deviation value ΔD.

計算獲得該ADC裝置與該目標晶體之間的夾角

。 For the above examples, in some specific implementations, the angle between the ADC device and the target crystal is obtained according to the change value ΔX of the liquid level element spacing and the corresponding crystal growth diameter deviation value ΔD, including:

Calculate the angle between the ADC device and the target crystal

.

。因此結合圖3，可以獲得ADC裝置2與目標晶體（如圖中豎直的虛線所示）之間的夾角

，且根據圖3所示的幾何關係，能夠獲得ADC裝置2與目標晶體之間的對應關係為

，進而可以獲得

。 It can be understood that, as shown in Figure 1, in the isodiametric stage, assuming that the liquid level position is at position I, the growth diameter of the crystal is the target growth diameter D ₀ ; understandably, when the liquid level position of the molten silicon liquid MS changes from When the surface position I changes to the liquid surface position II, the CCD camera 22 can monitor the change value of the liquid level distance at this time as ΔX, and at this time the growth diameter of the crystal changes from D ₀ to D ₁ , and the growth diameter deviation is

. Therefore, in combination with Fig. 3, the angle between the ADC device 2 and the target crystal (as shown by the vertical dotted line in the figure) can be obtained

, and according to the geometric relationship shown in Figure 3, the corresponding relationship between the ADC device 2 and the target crystal can be obtained as

, so that you can get

.

For the technical solution shown in Figure 2, in some examples, according to the corresponding relationship and the change speed of the liquid level spacing, the target position of the automatic diameter control device ADC is determined and the ADC device is horizontally moved to the target position, including: Obtain the horizontal movement speed of the ADC device according to the corresponding relationship and the change speed of the liquid level element spacing; determining the target position of the ADC device according to the horizontal moving speed of the ADC device; According to the target position of the ADC device, the ADC device is horizontally moved to the target position.

計算獲得該ADC裝置的水準移動速度

； 其中，

為該液位元間距的變化速度。 For the above examples, in some specific implementations, the level moving speed of the ADC device is obtained according to the corresponding relationship and the speed of change of the liquid level spacing, including:

Calculate the level moving speed of the ADC device

; in,

is the change speed of the liquid level element spacing.

It should be noted that the change speed of the distance between the liquid level elements can be measured in real time by the CCD camera 22. For example, an "L"-shaped quartz pin is set at the bottom of the draft tube, and the "L"-shaped pin is monitored in real time by the CCD camera 22. The bright spot image formed at the end of the quartz pin at the solid-liquid interface of the molten silicon liquid MS can be used to obtain the change value of the liquid level element spacing; of course, the distance change value of the solid-liquid interface set according to the isometric growth time and the isometric growth stage can be obtained The instantaneous change value of the liquid level spacing. The embodiment of the present invention does not specifically describe the method for obtaining the change speed of the liquid level element spacing.

向量，因此在本發明實施例中當液面位置上升時，規定液位元間距的變化速度

為正速度，當液面位置下降時，液位元間距的變化速度

為負速度；ADC裝置2沿水準方向向右移動時，規定其水準移動速度

為正速度；相反，ADC裝置2沿水準方向向左移動時，規定其水準移動速度

為負速度。 It should be noted that the speed

Vector, so in the embodiment of the present invention, when the liquid level rises, the change speed of the liquid level spacing is specified

is a positive speed, when the liquid level position drops, the change speed of the liquid level element spacing

is a negative speed; when the ADC device 2 moves to the right along the horizontal direction, its horizontal moving speed is specified

is a positive speed; on the contrary, when the ADC device 2 moves to the left along the horizontal direction, its horizontal moving speed is specified

is a negative velocity.

'，且

。因此為了保證ADC裝置2能夠即時準確地監控當前晶體的生長直徑，如圖5所示，需要在液面位置發生變化時即時水準移動ADC裝置2，以使得ADC裝置2與目標晶體之間的夾角為

保持不變，這樣就保證了ADC裝置2是在相同的工作條件下對晶體的等徑生長過程進行監測的。 It can be understood that, as shown in FIG. 4 , during the equidiametric crystal growth process, when the liquid level position changes from liquid level position I to liquid level position II, if the ADC device 2 remains at the original position, As shown in Figure 4, the angle between the ADC device 2 and the target crystal is

',and

. Therefore, in order to ensure that the ADC device 2 can accurately monitor the growth diameter of the current crystal in real time, as shown in Figure 5, it is necessary to move the ADC device 2 horizontally in real time when the liquid level changes, so that the angle between the ADC device 2 and the target crystal for

remains unchanged, thus ensuring that the ADC device 2 monitors the equal-diameter growth process of the crystal under the same working conditions.

，

；進而結合

可得，

。 Based on the above description, it can be seen from Figure 5 that at time T of the crystal isometric stage,

,

; and then combine

Available,

.

For the technical solution shown in FIG. 2 , in some examples, after the ADC device moves to the target position, the brightness value received by the optical pyrometer sensor is adjusted to a target brightness value, including: After the ADC device moves to the target position, the brightness value received by the optical pyrometer sensor is adjusted to the target brightness value through the temperature curve of the crystal.

It can be understood that when the position of the ADC device 2 changes, the brightness value received by the optical pyrometer sensor 21 will also change accordingly. In order to ensure that the brightness value received by the optical pyrometer sensor 21 is still the target The brightness value, at this time, can be automatically adjusted by the automatic temperature conversion (Automatic Temperature Conversion, ATC) method so that the brightness value received by the optical pyrometer sensor 21 is the target brightness value, so that the growth diameter of the crystal is the target growth diameter D ₀ .

For the technical solution shown in FIG. 2 , in some examples, after the ADC device moves to the target position, the brightness value received by the optical pyrometer sensor is adjusted to a target brightness value, including: After the ADC device moves to the target position, the brightness value received by the optical pyrometer sensor is adjusted to a target brightness value by adjusting the pulling speed of the crystal.

Similarly, when the position of the ADC device 2 changes, the brightness value received by its optical pyrometer sensor 21 will change. In order to ensure that the brightness value received by the optical pyrometer sensor 21 is still the target brightness value, the In the embodiment of the present invention, the liquid level position of the molten silicon liquid can also be automatically adjusted by adjusting the pulling speed (P/S) of the crystal, so that the brightness value received by the optical pyrometer sensor 21 is the target brightness value, and then the crystal The growth diameter of is the target growth diameter D ₀ .

Based on the same inventive concept as the aforementioned technical solution, see FIG. 6 , which shows a crystal growth diameter control device 6 provided by an embodiment of the present invention. The control device 6 includes: an acquisition part 601, a moving part 602 and an adjustment part 603; in, The acquisition part 601 is configured to pre-acquire the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value in the equal diameter growth stage, and determine the corresponding relationship between the change value of the liquid level spacing and the crystal growth diameter deviation value ; The moving part 602 is configured to determine the target position of the automatic diameter control device ADC and horizontally move the ADC device to the target position according to the corresponding relationship and the change speed of the distance between liquid level elements; The adjustment part 603 is configured to adjust the luminance value received by the optical pyrometer sensor to a target luminance value after the ADC device moves to the target position; wherein the target luminance value is used to characterize the growth diameter of the crystal as Target growth diameter.

In some examples, the obtaining part 601 is configured to: In the equal-diameter growth stage of the crystal, the change value ΔX of the liquid level spacing and the deviation value ΔD of the crystal growth diameter are obtained by the CCD camera; The included angle between the ADC device and the target crystal is obtained according to the change value ΔX of the liquid level element spacing and the corresponding crystal growth diameter deviation value ΔD.

計算獲得該ADC裝置與該目標晶體之間的夾角

。 In some examples, the acquisition part 601 is configured to:

Calculate the angle between the ADC device and the target crystal

.

In some examples, the moving part 602 is configured to: Obtain the horizontal movement speed of the ADC device according to the corresponding relationship and the change speed of the liquid level element spacing; determining the target position of the ADC device according to the horizontal moving speed of the ADC device; According to the target position of the ADC device, the ADC device is horizontally moved to the target position.

計算獲得該ADC裝置的水準移動速度

； 其中，

為該液位元間距的變化速度。 In some examples, the mobile part 602 is further configured to:

Calculate the level moving speed of the ADC device

; in,

is the change speed of the liquid level element spacing.

In some examples, the adjustment section 603 is configured to: After the ADC device moves to the target position, the brightness value received by the optical pyrometer sensor is adjusted to the target brightness value through the temperature curve of the crystal.

In some examples, the adjustment section 603 is further configured to: After the ADC device moves to the target position, the brightness value received by the optical pyrometer sensor is adjusted to a target brightness value by adjusting the pulling speed of the crystal.

Understandably, in this embodiment, a "part" may be a part of a circuit, a part of a processor, a part of a program or software, etc., of course it may also be a unit, and may also be a module or non-modular.

In addition, each component in this embodiment may be integrated into one processing unit, each unit may exist separately physically, or two or more units may be integrated into one unit. The above-mentioned integrated units can be implemented not only in the form of hardware, but also in the form of software function modules.

If the integrated unit is implemented in the form of a software function module and is not sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this embodiment is essentially or The part that contributes to the existing technology or the whole or part of the technical solution can be embodied in the form of software products. The computer software products are stored in a storage medium and include several instructions to make a computer device (which can be A personal computer, a server, or a network device, etc.) or a processor (processor) executes all or part of the steps of the method in this embodiment. The aforementioned storage media include: U disk, mobile hard disk, read only memory (Read Only Memory, ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk, etc., which can store program codes. medium.

Therefore, the present embodiment provides a computer storage medium, the computer storage medium stores a program for controlling the crystal growth diameter, and when the program for controlling the crystal growth diameter is executed by at least one processor, the crystal growth diameter in the above technical solution is realized. control method steps.

According to the control device 6 of the above-mentioned crystal growth diameter and the computer storage medium, referring to Fig. 7, it shows the specific hardware of the control device 7 of the crystal growth diameter that can implement the control device 6 of the above-mentioned crystal growth diameter provided by the embodiment of the present invention. Body structure, the control device 7 can be applied in the single crystal furnace 1 shown in Figure 1, the control device 7 can include: optical pyrometer sensor 21, CCD camera 22, memory 701 and processor 702; They are coupled together via a bus bar system 703 . It can be understood that the bus bar system 703 is used to realize connection and communication between these components. In addition to the data bus, the bus system 703 also includes a power bus, a control bus and a status signal bus. However, for clarity of illustration, the various bus bars are labeled bus bar system 703 in FIG. 7 . in, The CCD camera 22 is used to monitor the change value ΔX of the liquid level spacing and the corresponding deviation value ΔD of the crystal growth diameter; The memory 701 is used to store computer programs that can run on the processor 702; The processor 702 is configured to perform the following steps when running the computer program: Obtaining the change value of the liquid level spacing and the corresponding deviation value of the crystal growth diameter in advance in the equal diameter growth stage, and determining the corresponding relationship between the change value of the liquid level spacing and the deviation value of the crystal growth diameter; Determine the target position of the diameter automatic control device ADC according to the corresponding relationship and the change speed of the liquid level element spacing, and horizontally move the ADC device to the target position; After the ADC device moves to the target position, adjust the brightness value received by the optical pyrometer sensor to the target brightness value; Wherein, the target brightness value is used to represent that the growth diameter of the crystal is the target growth diameter.

It can be understood that the memory 701 in the embodiment of the present invention may be a volatile memory or a non-volatile memory, or may include both volatile and non-volatile memories. Among them, the non-volatile memory can be read-only memory (Read-Only Memory, ROM), programmable read-only memory (Programmable ROM, PROM), erasable programmable read-only memory (Erasable PROM) , EPROM), electrically erasable programmable read-only memory (Electrically EPROM, EEPROM) or flash memory. The volatile memory may be Random Access Memory (RAM), which is used as external cache memory. By way of illustration and not limitation, many forms of RAM are available such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous Dynamic Random Access Memory ( Synchronous DRAM, SDRAM), double data rate synchronous dynamic random access memory (Double Data Rate SDRAM, DDRSDRAM), enhanced synchronous dynamic random access memory (Enhanced SDRAM, ESDRAM), synchronous connection dynamic random access memory (Synchlink DRAM, SLDRAM) and Direct Memory Bus Random Access Memory (Direct Rambus RAM, DRRAM). The memory 701 of the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory.

The processor 702 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by an integrated logic circuit of hardware in the processor 702 or instructions in the form of software. The aforementioned processor 702 may be a general purpose processor, a digital signal processor (Digital Signal Processor, DSP), an application specific integrated circuit (Application Specific Integrated Circuit, ASIC), a field programmable gate array (Field Programmable Gate Array, FPGA) Or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components. Various methods, steps and logic block diagrams disclosed in the embodiments of the present invention may be implemented or executed. A general-purpose processor may be a microprocessor, or the processor may be any conventional processor, or the like. The steps of the methods disclosed in connection with the embodiments of the present invention may be directly implemented by a hardware decoding processor, or implemented by a combination of hardware and software modules in the decoding processor. The software module can be located in a mature storage medium in the field such as random access memory, flash memory, read-only memory, programmable read-only memory or electrically readable and writable programmable memory, register. The storage medium is located in the memory 701, and the processor 702 reads the information in the memory 701, and completes the steps of the above method in combination with its hardware.

It should be understood that the embodiments described herein may be implemented by hardware, software, firmware, middleware, microcode or a combination thereof. For hardware implementation, the processing unit can be implemented in one or more application specific integrated circuits (Application Specific Integrated Circuits, ASIC), digital signal processor (Digital Signal Processing, DSP), digital signal processing equipment (DSP Device, DSPD), Programmable Logic Device (Programmable Logic Device, PLD), Field-Programmable Gate Array (Field-Programmable Gate Array, FPGA), general-purpose processor, controller, microcontroller, microprocessor, for implementing the present invention functions in other electronic units or combinations thereof.

For a software implementation, the techniques described herein can be implemented through modules (eg, procedures, functions, and so on) that perform the functions described herein. Software codes may be stored in memory and executed by a processor. Memory can be implemented within the processor or external to the processor.

Specifically, the processor 702 is also configured to execute the steps of the method for controlling the crystal growth diameter in the foregoing technical solution when running the computer program, and details will not be repeated here.

The above are only preferred embodiments of the present invention, and are not used to limit the implementation scope of the present invention. If the present invention is modified or equivalently replaced without departing from the spirit and scope of the present invention, it shall be covered by the protection of the patent scope of the present invention. in the range.

1: Single crystal furnace 2: ADC device 6: Control device 7: Control equipment 10: furnace body 20: Graphite Crucible 21: Pyrometer sensor 22:CCD camera 30: Quartz Crucible 40: heater 50: hot screen 60:Seed cable 70: crucible shaft 80: Observation window 601: get part 602: Moving part 603: Adjust part 701: Memory 702: Processor 703: bus bar system MS: molten silicon liquid S201-S203: Steps

Fig. 1 is a schematic structural diagram of a single crystal furnace provided by an embodiment of the present invention; Fig. 2 is a schematic flow chart of a crystal growth diameter control method provided by an embodiment of the present invention; 3 is a schematic diagram of the relationship between the change value of the liquid level element spacing and the deviation value of the crystal growth diameter provided by the embodiment of the present invention; Fig. 4 is a schematic diagram of the relationship between the position of the ADC device and the included angle of the crystal provided by the embodiment of the present invention; Fig. 5 is another schematic diagram of the relationship between the position of the ADC device and the included angle of the crystal provided by the embodiment of the present invention; Fig. 6 is a schematic composition diagram of a crystal growth diameter control device provided by an embodiment of the present invention; FIG. 7 is a schematic diagram of a hardware structure of a crystal growth diameter control device provided by an embodiment of the present invention.

S201-S203: Steps

Claims (10)

A method for controlling the diameter of crystal growth, the method comprising: Obtaining the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value in advance in the equal diameter growth stage, and determining the corresponding relationship between the change value of the liquid level spacing and the crystal growth diameter deviation value; Determine the target position of the diameter automatic control device ADC according to the corresponding relationship and the change speed of the liquid level element spacing, and horizontally move the ADC device to the target position; After the ADC device moves to the target position, adjust the brightness value received by the optical pyrometer sensor to the target brightness value; Wherein, the target brightness value is used to represent that the growth diameter of the crystal is the target growth diameter. The method for controlling the crystal growth diameter as described in Claim 1, wherein the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value are obtained in advance during the equal diameter growth stage, and the change value of the liquid level spacing and the crystal growth diameter are determined. Correspondence between growth diameter deviation values, including: In the equal-diameter growth stage of the crystal, the change value ΔX of the liquid level spacing and the deviation value ΔD of the crystal growth diameter are obtained by the CCD camera; The included angle between the ADC device and the target crystal is obtained according to the change value ΔX of the liquid level element spacing and the corresponding crystal growth diameter deviation value ΔD. The method for controlling the crystal growth diameter as described in Claim 2, wherein the angle between the ADC device and the target crystal is obtained according to the change value ΔX of the liquid level element spacing and the corresponding crystal growth diameter deviation ΔD, including: according to

Calculate the angle between the ADC device and the target crystal

. The crystal growth diameter control method as described in Claim 3, wherein, according to the corresponding relationship and the change speed of the liquid level element spacing, determine the target position of the automatic diameter control device ADC and move the ADC device horizontally to the target position, include: Obtain the horizontal movement speed of the ADC device according to the corresponding relationship and the change speed of the liquid level element spacing; determining the target position of the ADC device according to the horizontal moving speed of the ADC device; According to the target position of the ADC device, the ADC device is horizontally moved to the target position. The method for controlling the crystal growth diameter as described in Claim 4, wherein, according to the corresponding relationship and the change speed of the liquid level element spacing, obtaining the horizontal movement speed of the ADC device includes: According to:

Calculate the level moving speed of the ADC device

; in,

is the change speed of the liquid level element spacing. The method for controlling the crystal growth diameter as described in Claim 1, wherein after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to the target brightness value includes: After the ADC device moves to the target position, the brightness value received by the optical pyrometer sensor is adjusted to the target brightness value through the temperature curve of the crystal. The method for controlling the crystal growth diameter as described in Claim 1, wherein after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to the target brightness value includes: After the ADC device moves to the target position, the brightness value received by the optical pyrometer sensor is adjusted to a target brightness value by adjusting the pulling speed of the crystal. A crystal growth diameter control device, the control device includes: an acquisition part, a moving part and an adjustment part; wherein, The acquisition part is configured to pre-acquire the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value in the equal diameter growth stage, and determine the corresponding relationship between the change value of the liquid level spacing and the crystal growth diameter deviation value; The moving part is configured to determine the target position of the automatic diameter control device ADC and horizontally move the ADC device to the target position according to the corresponding relationship and the change speed of the distance between the liquid level elements; The adjustment part is configured to adjust the luminance value received by the optical pyrometer sensor to a target luminance value after the ADC device moves to the target position; wherein, the target luminance value is used to represent that the growth diameter of the crystal is the target growth diameter. A crystal growth diameter control device, the device is applied to a single crystal furnace, the device includes: optical pyrometer sensor, CCD camera, memory and processor; wherein, The CCD camera is used to monitor the change value of the liquid level spacing ΔX and the corresponding deviation value ΔD of the crystal growth diameter; The memory is used to store computer programs that can run on the processor; The processor is configured to perform the following steps when running the computer program: Obtaining the change value of the liquid level spacing and the corresponding crystal growth diameter deviation value in advance in the equal diameter growth stage, and determining the corresponding relationship between the change value of the liquid level spacing and the crystal growth diameter deviation value; Determine the target position of the diameter automatic control device ADC according to the corresponding relationship and the change speed of the liquid level element spacing, and horizontally move the ADC device to the target position; After the ADC device moves to the target position, adjust the brightness value received by the optical pyrometer sensor to the target brightness value; Wherein, the target brightness value is used to represent that the growth diameter of the crystal is the target growth diameter. A computer storage medium, the computer storage medium stores a program for controlling the crystal growth diameter, and when the program for controlling the crystal growth diameter is executed by at least one processor, the crystal growth diameter described in any one of claims 1 to 7 is realized steps of the control method.

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