CN116905083A - Crystal growth device and crystal growth method - Google Patents
Crystal growth device and crystal growth method Download PDFInfo
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- CN116905083A CN116905083A CN202310715519.7A CN202310715519A CN116905083A CN 116905083 A CN116905083 A CN 116905083A CN 202310715519 A CN202310715519 A CN 202310715519A CN 116905083 A CN116905083 A CN 116905083A
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- 239000013078 crystal Substances 0.000 title claims abstract description 118
- 238000002109 crystal growth method Methods 0.000 title claims abstract description 9
- 239000000155 melt Substances 0.000 claims abstract description 38
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 238000003384 imaging method Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 abstract description 27
- 230000008569 process Effects 0.000 abstract description 11
- 239000008710 crystal-8 Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 239000010453 quartz Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- CLOMYZFHNHFSIQ-UHFFFAOYSA-N clonixin Chemical compound CC1=C(Cl)C=CC=C1NC1=NC=CC=C1C(O)=O CLOMYZFHNHFSIQ-UHFFFAOYSA-N 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application provides a crystal growth device and a crystal growth method, wherein the crystal growth device comprises: a crucible for containing a melt for growing the crystal; a guide cylinder located above the liquid level of the melt and surrounding a seed crystal; the guide cylinder driving unit is used for driving the guide cylinder to move; an imaging unit for acquiring projection images formed by the seed crystal and the guide cylinder on the liquid level of the melt; and the control unit is connected with the imaging unit and the guide cylinder driving unit and is used for determining whether the guide cylinder is eccentric or inclined relative to the seed crystal or not based on the projection image and correcting the position of the guide cylinder when the eccentric or inclined exists. By correcting the eccentricity and the inclination generated in the lifting process of the guide cylinder, the application avoids setting a crucible with overlong travel and a furnace body with overhigh height in the crystal growth device, and reduces the thermal field cost and the hardware cost.
Description
Technical Field
The application relates to the technical field of crystal growth, in particular to a crystal growth device and a crystal growth method.
Background
The Czochralski method (Czochralski method, abbreviated as CZ method) refers to a method in which a high-purity raw material is melted into a liquid state by heating in a closed high vacuum or a rare gas (or inert gas) protective atmosphere and then recrystallized to form a single crystal material having a certain external dimension, wherein measuring the liquid distance between a melt and a guide cylinder using a locating pin is a common method in crystal growth. In order to make the material melting more convenient, many crystal growth devices design the function that the draft tube can go up and down, in the material melting process, raise the draft tube, make the draft tube break away from the crucible apron, after the material melting is finished, lower the draft tube, make the draft tube contact with the apron, then continue to operate. The method does not take into account the effect of the change in position caused by the elevation and depression of the guide cylinder on crystal growth.
In other related art, a method of fixing the guide cylinder is adopted, namely, the guide cylinder is installed in the process of opening the furnace, the position of the guide cylinder is not moved after closing the furnace, and the crucible is lowered to a very low position in the process of melting the material by increasing the height of the furnace body and the travel of the crucible of the crystal growing device, so that the liquid distance between the guide cylinder and the crucible containing the raw materials is kept. The method avoids the influence of the position change caused by the rise and fall of the guide cylinder on the crystal growth by not changing the position of the guide cylinder, but requires a furnace body with larger size, and has very high cost of hardware, thermal field and the like.
In view of the above, the present application provides a new crystal growth method and system to at least partially solve the above problems.
Disclosure of Invention
The present application has been made in order to solve at least one of the above problems. According to an aspect of the present application, there is provided a crystal growth apparatus comprising: a crucible for containing a melt for growing the crystal; a guide cylinder located above the liquid level of the melt and surrounding a seed crystal; the guide cylinder driving unit is used for driving the guide cylinder to move; an imaging unit for acquiring projection images formed by the seed crystal and the guide cylinder on the liquid level of the melt; and the control unit is connected with the imaging unit and the guide cylinder driving unit and is used for determining whether the guide cylinder is eccentric or inclined relative to the seed crystal or not based on the projection image and correcting the position of the guide cylinder when the eccentric or inclined exists.
Illustratively, the guide cylinder is symmetrically provided with a first locating pin and a second locating pin at the lower edge of the opening, the first locating pin and the second locating pin comprise a locating pin main body, the upper part of the locating pin main body extends outwards to form a second extending arm and a first extending arm, the second extending arm faces the seed crystal and is used for forming projection on the liquid level of the melt, and the first extending arm faces away from the seed crystal and is connected with the guide cylinder.
Illustratively, the second extension arm of the first locating pin forms a first projection at the level of the melt, the second extension arm of the second locating pin forms a second projection at the level of the melt, the distance between the seed crystal and the first projection is a first radial distance, the distance between the seed crystal and the second projection is a second radial distance, the distance between the first projection and the second projection is a projected distance of the guide cylinder, the distance between the second extension arm of the first locating pin and the second extension arm of the locating pin is a cross-sectional distance of the guide cylinder, the determining whether the guide cylinder is eccentric or tilted relative to the seed crystal comprises: determining that the guide cylinder is eccentric when a first absolute difference between the first radial distance and the second radial distance is greater than an eccentricity threshold.
Illustratively, the determining whether the guide cylinder is eccentric or tilted with respect to the seed crystal includes: and determining that the guide cylinder is inclined when the absolute value of the second difference value between the projection distance and the section distance is larger than an inclination threshold value.
Illustratively, said modifying the position of said guide shell comprises: the guide cylinder driving unit drives the guide cylinder to move so that the first absolute value of the difference is smaller than the eccentric threshold value, or so that the second absolute value of the difference is smaller than the inclined threshold value.
Illustratively, the cross-sectional shape of the end of the second extension arm includes: triangle, rectangle or trapezoid.
Illustratively, a lower portion of the dowel body is used to measure the standoff.
Illustratively, the imaging unit is located on top of the crystal growing apparatus.
The imaging unit comprises, for example, a camera.
The application also provides a crystal growth method, which is used for the crystal growth device of any one of the above steps, and comprises the following steps: acquiring projection images formed by the seed crystal and the guide cylinder on the liquid level of the melt: based on the projection image, it is determined whether the guide cylinder is eccentric or tilted with respect to the seed crystal, and the position of the guide cylinder is corrected when there is the eccentricity or tilting.
By correcting the eccentricity and the inclination generated in the lifting process of the guide cylinder, the application avoids setting a crucible with overlong travel and a furnace body with overhigh height in the crystal growth device, and reduces the thermal field cost and the hardware cost.
Drawings
The above and other objects, features and advantages of the present application will become more apparent by describing embodiments of the present application in more detail with reference to the attached drawings. The accompanying drawings are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate the application and together with the embodiments of the application, and not constitute a limitation to the application. In the drawings, like reference numerals generally refer to like parts or steps.
FIG. 1 is a schematic view showing the structure of a crystal growing apparatus according to an embodiment of the present application;
FIG. 2 illustrates a schematic view of the distance of a first alignment pin and a second alignment pin from a seed crystal according to an embodiment of the present application;
FIG. 3A illustrates a cross-sectional block diagram of a dowel according to an embodiment of the present application;
FIG. 3B illustrates a cross-sectional block diagram of a dowel according to an embodiment of the present application;
FIG. 3C illustrates a cross-sectional block diagram of a dowel according to an embodiment of the present application;
FIG. 3D illustrates a cross-sectional block diagram of a dowel according to an embodiment of the present application;
FIG. 4 illustrates a crystal growth method according to an embodiment of the application;
in the drawings of which there are shown,
the crystal growth apparatus 100, the crucible 13, the guide cylinder 7, the seed crystal 8, the imaging unit 9, the cover plate 10, the guide cylinder driving unit 11, the control unit 12, the first positioning pin 14, the second positioning pin 15, the first extension arm 1, the positioning pin body 2, and the second extension arm 3.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. It should be apparent that the described embodiments are only some embodiments of the present application and not all embodiments of the present application, and it should be understood that the present application is not limited by the example embodiments described herein. Based on the embodiments of the application described in the present application, all other embodiments that a person skilled in the art would have without inventive effort shall fall within the scope of the application.
In the process of growing crystals by the Czochralski method, the success or failure of the crystal growth and the quality of the crystal are determined by the temperature distribution of the thermal field in the crystal growth apparatus, etc. For example, a thermal field with proper temperature distribution not only can ensure smooth crystal growth, but also has higher crystal quality; if the temperature distribution of the thermal field is not reasonable, various defects are easy to generate in the process of growing crystals, the quality is influenced, and the single crystals can not be grown due to the serious crystallization phenomenon. The thermal field in the crystal growth apparatus is usually composed of components made of graphite and graphite felt materials, and the thermal field after assembly of the components is required to ensure that the center of the thermal field is consistent with the center of the crucible system, for example, the axis of the guide cylinder is consistent with the axis of the seed crystal, so as to ensure that the thermal zone for crystal growth is symmetrical and stable. However, due to the change of the positions of the guide cylinders before and after material melting, the center of the thermal field is offset, and the temperature distribution of the thermal field is affected.
The guide cylinder is usually an inverted cone-shaped shield made of graphite material and is used for adjusting the flow direction and flow rate of inert gas, so that the inert gas blown downwards is concentrated near the growth interface of the crystal, and the heat radiation transfer of a high-temperature liquid level and a crucible to the cooled crystal is prevented, the heat output of the surface of the crystal to the surrounding is improved, and the heat transfer rate of the crystal side and the temperature gradient of the crystal side are improved. In order to ensure that the relative distance between the guide cylinder and the seed crystal is consistent, i.e. that the axis of the seed crystal is consistent with the axis of the guide cylinder, during the crystal growth process, it is important that the application provides a crystal growth device to determine and correct the eccentricity or inclination of the guide cylinder relative to the seed crystal.
The crystal growth apparatus provided by the present application will be described in detail with reference to fig. 1 to 3D, wherein fig. 1 shows a schematic structural view of a crystal growth apparatus according to an embodiment of the present application; FIG. 2 illustrates a schematic view of the distance of a first alignment pin and a second alignment pin from a seed crystal according to an embodiment of the present application; FIG. 3A illustrates a cross-sectional block diagram of a dowel according to an embodiment of the present application; FIG. 3B illustrates a cross-sectional block diagram of a dowel according to an embodiment of the present application;
FIG. 3C illustrates a cross-sectional block diagram of a dowel according to an embodiment of the present application; fig. 3D shows a cross-sectional structural view of a dowel according to an embodiment of the present application.
In one embodiment, as shown in fig. 1, the crystal growth apparatus 100 provided by the present application includes: a crucible 13 for containing a melt for growing a crystal; a guide cylinder 7 located above the level of the melt and surrounding the seed crystal 8; a guide cylinder driving unit 11 for driving the guide cylinder 7 to move; an imaging unit 9, located at the top of the crystal growing apparatus 100, for acquiring projection images of the seed crystal 8 and the guide cylinder 7 formed on the liquid surface of the melt; a control unit 12, connected to the imaging unit 9 and the guide cylinder driving unit 11, for determining whether the guide cylinder 7 is eccentric or inclined with respect to the seed crystal 8 based on the projection image, and correcting the position of the guide cylinder 7 when there is the eccentricity or inclination.
In one embodiment, with continued reference to FIG. 1, a crystal growing apparatus 100 for growing crystals by the Czochralski method includes a crucible 13, the crucible 13 illustratively including a quartz crucible for receiving a feedstock and a graphite crucible for supporting the quartz crucible; a heater (not shown) is provided around the outer periphery of the crucible 13, and heats the raw material contained in the quartz crucible into a melt, and a crystal is pulled above the melt; a guide cylinder 7 in the shape of an inverted truncated cone is arranged above the crucible 13, the guide cylinder 7 is arranged around the drawn crystal, and the lower end of the guide cylinder 7 stretches into the quartz crucible to keep a fixed distance from the liquid level of the melt.
For example, the quartz crucible is used for containing raw materials and melts formed after the raw materials are melted, and is mainly made of quartz, so that the quartz crucible has the advantages of good thermal stability, high purity, high temperature resistance, large size, high precision and the like, and the main component of the quartz crucible is silicon dioxide and can be used at 1450 ℃, so that the quality of crystals is not affected even though a part of the quartz crucible is melted into the melts carried by the quartz crucible at high temperature. The graphite crucible is used for accommodating the quartz crucible, and mainly takes graphite as a main material, and has the characteristics of high temperature resistance and good heat conduction performance, so that the graphite crucible can maintain the original shape at high temperature.
The heater for heating the raw material in the quartz crucible is provided at the outer periphery of the crucible, and further, the heater may be disposed at the bottom of the crucible in addition to the outer periphery of the crucible to heat the crucible more uniformly. When the heater is electrified to heat the crucible, the raw materials are heated and melted in the quartz crucible to form a melt, the seed crystal is immersed in the melt, and silicon atoms grow along the seed crystal to form crystals by rotating and slowly lifting a seed crystal shaft fixedly connected with the seed crystal. The crystal growth process specifically includes several stages of seeding, shouldering, shoulder turning, isodiametric ending and the like, which are known to those skilled in the art and are not repeated here.
In the process of drawing the crystal through the seed crystal, a guide cylinder is arranged around the seed crystal, is positioned above the crucible, is in the shape of an inverted truncated cone with a large upper part and a small lower part, and mainly serves to isolate heat radiation of a heater on the crystal, ensure temperature gradient required by crystal growth and improve the lifting speed of crystal growth. In addition, the flow direction of the protective gas in the crystal growth device can be ensured, the gas flow rate of the liquid level of the melt is accelerated, volatile impurities are taken away, for example, volatile oxygen can be taken away rapidly, the oxygen content of the crystal is effectively reduced, and the crystal quality is improved.
In one embodiment, referring to fig. 1 and 3A to 3D, the guide cylinder 7 is provided with a first positioning pin 14 and a second positioning pin 15 symmetrically along the lower edge of the opening, the first positioning pin 14 and the second positioning pin 15 comprise a positioning pin body 2, the upper part of the positioning pin body 2 is extended outwards to form a first extension arm 1 and a second extension arm 3, the second extension arm 3 faces the seed crystal 8 and is used for forming a projection on the liquid level of the melt, the first extension arm 1 faces away from the seed crystal 8 and is connected with the guide cylinder 7, wherein the first positioning pin 14 and the second positioning pin 15 are identical in shape and size and are located in the same horizontal plane, and the lower part of the positioning pin body 2 is used for measuring the liquid distance between the guide cylinder 7 and the liquid level of the melt. Illustratively, at the time of stabilization after the end of the melting, the guide cylinder 7 is lowered onto the cover plate 10, and whether the guide cylinder 7 is eccentric or inclined with respect to the seed crystal 8 is monitored by determining the distance between the guide cylinder 7 and the seed crystal 8. When the guide cylinder 7 is eccentric or inclined relative to the seed crystal 8, the guide cylinder 7 is adjusted in position by the guide cylinder driving unit 11, so that the guide cylinder 7 is corrected in position, and the problems of inclination, eccentricity and the like of the guide cylinder 7 are prevented from influencing the quality and the integrity of crystals.
In one embodiment, as shown in fig. 1 and 2, the first and second positioning pins 14 and 15 are provided at positions symmetrical about the center of the cross section of the guide cylinder 7, and the first and second positioning pins 14 and 15 are provided at the bottom of the guide cylinder 7 and are diametrically opposed. Illustratively, the first and second alignment pins 14, 15 are made of quartz or silicon nitride and can be used to operate in a high temperature environment. Alternatively, the first positioning pin 14 and the second positioning pin 15 may be screwed on the bottom of the guide cylinder 7 to facilitate replacement, and may be integrally formed with the guide cylinder 7.
In one embodiment, as shown in fig. 3A to 3D, the cross-sectional shape of the end of the second extension arm 3 includes: triangle, rectangle or trapezoid. Referring to fig. 3A, the end of the second extension arm 3 has a rectangular cross-sectional shape. Referring to fig. 3B, the end of the second extension arm 3 has a trapezoidal cross-sectional shape. Referring to fig. 3C, the end of the second extension arm 3 has a trapezoidal cross-sectional shape. Referring to fig. 3D, the end of the second extension arm 3 has a triangular cross-sectional shape. Preferably, the applicant has found that the projection effect formed by the second extension arm 3 is best when the end of the second extension arm 3 has a rectangular cross-sectional shape.
In one embodiment, referring to fig. 1 and 2, the second extension arm 3 of the first locating pin 14 forms a first projection at the level of the melt, the second extension arm 3 of the second locating pin 15 forms a second projection at the level of the melt, the distance between the seed crystal 8 and the first projection is a first radial distance, the distance between the seed crystal 8 and the second projection is a second radial distance, the distance between the first projection and the second projection is a projected distance of the guide cylinder 7, the distance between the second extension arm 3 of the first locating pin 14 and the second extension arm 3 of the second locating pin 15 is a cross-sectional distance of the guide cylinder 7, determining whether the guide cylinder 7 is eccentric or tilted with respect to the seed crystal 8, comprising: when the absolute value of the first difference between the first radial distance and the second radial distance is greater than the eccentricity threshold, the eccentricity of the guide cylinder 7 is determined. Determining whether the guide cylinder 7 is eccentric or inclined with respect to the seed crystal 8 further includes: when the absolute value of the second difference between the projection distance and the section distance is greater than the inclination threshold, it is determined that the guide cylinder 7 is inclined.
In one embodiment, the imaging unit 9 may comprise a camera for capturing a projection of the first and second alignment pins 14, 15 on the surface of the melt and an image of the seed crystal 8, the imaging unit 9 transmitting the captured image to the control unit 12. The camera for photographing is provided outside the crystal growth apparatus 100, and photographs the seed crystal 8, the first positioning pin 14 and the second positioning pin 15 and their projections on the liquid surface of the melt through photographing windows opened at the top of the furnace body of the crystal growth apparatus 100. Cameras include any device capable of being used for optical imaging including, but not limited to, CCD cameras, digital cameras, high definition cameras, and the like.
In one embodiment, referring to fig. 1 and 2, the first radial distance d is calculated by the control unit 12 from the image taken by the imaging unit 9 1 Second radial distance d 2 By the formula Δr= |d 1 -d 2 Obtaining a first radial distance d 1 Distance d from the second radial direction 2 Is a first difference absolute value ar of (c). Next, the control unit 12 compares the first difference absolute value Δr with a preset decentration threshold Δr 0 Comparing when the absolute value Deltar of the first difference is larger than the eccentric threshold Deltar 0 When the control unit 12 generates a correction of the position of the guide cylinder 7A signal. Illustratively, Δr 0 Equal to 0.8mm, 0.9mm, 1mm, 1.1mm or 1.2mm. Meanwhile, the control unit 12 also passes the formula Δd= |d 0 -D| obtaining projection distance D 0 A second absolute value Δd of the difference from the cross-sectional distance D, wherein the projection distance D 0 ＝d 1 +d 2 + phi, which is the diameter of the seed crystal 8, and the second absolute value of the difference Deltad is compared with a preset tilt threshold Deltad 0 Comparing when the absolute value Deltad of the second difference is larger than the inclination threshold Deltad 0 In this case, the control unit 12 also generates a correction signal for the position of the guide cylinder 7. Illustratively Δd 0 Equal to 0.15mm, 0.2mm or 0.25mm. For example, a plurality of images may be acquired within a certain photographing time, and the projection distance d may be obtained based on the plurality of images 0 First radial distance d 1 And a second radial distance d 2 To be substituted into the above formula, the photographing time ranges from 30s to 60s.
In one embodiment, the control unit 12 is further connected to the guide cylinder driving unit 11, and the guide cylinder driving unit 11 drives the guide cylinder 7 to move after receiving the correction signal sent by the control unit 12, so that the relative position of the guide cylinder 7 and the seed crystal 8 is changed, and the absolute value Δr of the first difference is smaller than the eccentric threshold Δr 0 Alternatively, the second difference absolute value DeltaD is made smaller than the tilt threshold DeltaD 0 。
By correcting the eccentricity and the inclination generated in the lifting process of the guide cylinder, the application avoids setting a crucible with overlong travel and a furnace body with overhigh height in the crystal growth device, and reduces the thermal field cost and the hardware cost.
Thus, the description of the crystal growth apparatus provided by the present application has been completed. In addition, the application also provides a crystal growth method, which is used for the crystal growth device, as shown in fig. 4, and comprises the following steps: step S41: acquiring projection images formed by the seed crystal and the guide cylinder on the liquid level of the melt: step S42: based on the projection image, it is determined whether the guide cylinder is eccentric or tilted with respect to the seed crystal, and the position of the guide cylinder is corrected when there is the eccentricity or tilting.
In one embodiment, determining whether the guide cylinder is eccentric or tilted with respect to the seed crystal includes: and determining that the guide cylinder is eccentric when the absolute value of the difference between the first radial distance and the second radial distance is larger than the eccentric threshold value.
In one embodiment, determining whether the guide cylinder is eccentric or tilted with respect to the seed crystal includes: and determining that the guide cylinder is inclined when the absolute value of the difference between the projection distance and the section distance is larger than the inclination threshold value.
In one embodiment, modifying the position of the guide cylinder includes: the guide cylinder is driven to move so that the absolute value of the first difference is smaller than the eccentricity threshold, or so that the absolute value of the second difference is smaller than the inclination threshold.
Although the illustrative embodiments have been described herein with reference to the accompanying drawings, it is to be understood that the above illustrative embodiments are merely illustrative and are not intended to limit the scope of the present application thereto. Various changes and modifications may be made therein by one of ordinary skill in the art without departing from the scope and spirit of the application. All such changes and modifications are intended to be included within the scope of the present application as set forth in the appended claims.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the several embodiments provided by the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners. For example, the above-described device embodiments are merely illustrative, e.g., the division of the elements is merely a logical functional division, and there may be additional divisions when actually implemented, e.g., multiple elements or components may be combined or integrated into another device, or some features may be omitted or not performed.
In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in order to streamline the application and aid in understanding one or more of the various inventive aspects, various features of the application are sometimes grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of the application. However, the method of the present application should not be construed as reflecting the following intent: i.e., the claimed application requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this application.
It will be understood by those skilled in the art that all of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or units of any method or apparatus so disclosed, may be combined in any combination, except combinations where the features are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the claims, any of the claimed embodiments may be used in any combination.
Various component embodiments of the application may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. Those skilled in the art will appreciate that some or all of the functions of some of the modules according to embodiments of the present application may be implemented in practice using a microprocessor or Digital Signal Processor (DSP). The present application can also be implemented as an apparatus program (e.g., a computer program and a computer program product) for performing a portion or all of the methods described herein. Such a program embodying the present application may be stored on a computer readable medium, or may have the form of one or more signals. Such signals may be downloaded from an internet website, provided on a carrier signal, or provided in any other form.
It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
The foregoing description is merely illustrative of specific embodiments of the present application and the scope of the present application is not limited thereto, and any person skilled in the art can easily think about variations or substitutions within the scope of the present application. The protection scope of the application is subject to the protection scope of the claims.
Claims (10)
1. A crystal growth apparatus, comprising:
a crucible for containing a melt for growing the crystal;
a guide cylinder located above the liquid level of the melt and surrounding a seed crystal;
the guide cylinder driving unit is used for driving the guide cylinder to move;
an imaging unit for acquiring projection images formed by the seed crystal and the guide cylinder on the liquid level of the melt;
and the control unit is connected with the imaging unit and the guide cylinder driving unit and is used for determining whether the guide cylinder is eccentric or inclined relative to the seed crystal or not based on the projection image and correcting the position of the guide cylinder when the eccentric or inclined exists.
2. The crystal growth apparatus according to claim 1, wherein the guide cylinder is provided with a first positioning pin and a second positioning pin symmetrically along a lower edge of the opening, the first positioning pin and the second positioning pin include a positioning pin main body, an upper portion of the positioning pin main body is formed with a first extension arm and a second extension arm extending outward, the second extension arm faces the seed crystal and is used for forming a projection at a liquid level of the melt, and the first extension arm faces away from the seed crystal and is connected with the guide cylinder.
3. The crystal growth apparatus of claim 2, wherein the second extension arm of the first locating pin forms a first projection at the level of the melt, the second extension arm of the second locating pin forms a second projection at the level of the melt, a distance between the seed crystal and the first projection is a first radial distance, a distance between the seed crystal and the second projection is a second radial distance, a distance between the first projection and the second projection is a projected distance of the guide cylinder, a distance between the second extension arm of the first locating pin and the second extension arm of the second locating pin is a cross-sectional distance of the guide cylinder, the determining whether the guide cylinder is eccentric or tilted with respect to the seed crystal, comprising:
determining that the guide cylinder is eccentric when a first absolute difference between the first radial distance and the second radial distance is greater than an eccentricity threshold.
4. The crystal growth apparatus of claim 2, wherein the second extension arm of the first locating pin forms a first projection at the level of the melt, the second extension arm of the second locating pin forms a second projection at the level of the melt, a distance between the seed crystal and the first projection is a first radial distance, a distance between the seed crystal and the second projection is a second radial distance, a distance between the first projection and the second projection is a projected distance of the guide cylinder, a distance between the second extension arm of the first locating pin and the second extension arm of the second locating pin is a cross-sectional distance of the guide cylinder, the determining whether the guide cylinder is eccentric or tilted with respect to the seed crystal, comprising:
and determining that the guide cylinder is inclined when the absolute value of the second difference value between the projection distance and the section distance is larger than an inclination threshold value.
5. The crystal growth apparatus of claim 3 or 4, wherein the modifying the position of the guide cylinder comprises:
the guide cylinder driving unit drives the guide cylinder to move so that the first absolute value of the difference is smaller than the eccentric threshold value, or so that the second absolute value of the difference is smaller than the inclined threshold value.
6. The crystal growing apparatus of claim 2, wherein the cross-sectional shape of the end of the second extension arm comprises: triangle, rectangle or trapezoid.
7. The crystal growing apparatus of claim 2, wherein a lower portion of the dowel body is used to measure the liquid distance.
8. The crystal growing apparatus of claim 1 wherein the imaging unit is located on top of the crystal growing apparatus.
9. The crystal growth apparatus of claim 1, wherein the imaging unit comprises a camera.
10. A crystal growth method for a crystal growth apparatus according to any one of claims 1 to 9, comprising:
acquiring projection images formed by seed crystals and guide barrels on the liquid level of the melt;
based on the projection image, it is determined whether the guide cylinder is eccentric or tilted with respect to the seed crystal, and the position of the guide cylinder is corrected when there is the eccentricity or tilting.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310715519.7A CN116905083A (en) | 2023-06-15 | 2023-06-15 | Crystal growth device and crystal growth method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310715519.7A CN116905083A (en) | 2023-06-15 | 2023-06-15 | Crystal growth device and crystal growth method |
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| CN202310715519.7A Pending CN116905083A (en) | 2023-06-15 | 2023-06-15 | Crystal growth device and crystal growth method |
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