CN111020701A - Method for rapidly determining stable temperature crucible position - Google Patents
Method for rapidly determining stable temperature crucible position Download PDFInfo
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- CN111020701A CN111020701A CN201911387671.7A CN201911387671A CN111020701A CN 111020701 A CN111020701 A CN 111020701A CN 201911387671 A CN201911387671 A CN 201911387671A CN 111020701 A CN111020701 A CN 111020701A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
Abstract
The invention provides a method for quickly determining a temperature-stable crucible position, which comprises the following steps: fixing: fixing a CCD camera on the furnace cover; calibration: adjusting the CCD camera to enable the liquid level of the silicon in the seed crystal, the guide cylinder and the quartz crucible to be projected into the graphical interface of the display and form a geometric figure, and enabling the projection center of the seed crystal to be superposed with the graphical interface center of the display; focusing: adjusting the CCD camera to unify the size of the graphical interface of the display; and (3) quantification: and determining and quantifying the temperature-stabilizing crucible position from the geometric figure in the graphical interface of the display. The method can quickly find the position of the temperature-stabilizing crucible, has high precision and strong universality, can ensure the stable growth of the single crystal, reduces the times of edge breakage of the single crystal line, improves the production efficiency and ensures the product quality.
Description
Technical Field
The invention belongs to the technical field of pulling of czochralski silicon single crystals, and particularly relates to a method for quickly determining a temperature-stable crucible position.
Background
The CZ method silicon single crystal growth process comprises the steps of charging, melting, temperature stabilization, seeding, shouldering, shoulder rotation, constant diameter and ending, wherein the melting process is a silicon material melting process, and after the silicon materials are completely melted, the melt needs to be stabilized for a period of time to achieve the stability of melt temperature and melt flow, and the process is temperature stabilization. If the temperature is too low, the seed crystals can be solidified along the liquid level, and qualified single crystals are difficult to grow after insufficient necking due to too low temperature and insufficient fusion; if the temperature is too high, the seed crystal is fused and can not be seeded normally. In the temperature stabilizing process, the temperature stabilizing crucible position, namely the distance between the lower edge of the guide cylinder and the liquid level of the molten silicon, needs to be determined, if the crucible position is low, the seeding is difficult, and the crystal yield is low; if the crucible is higher, liquid level jitter is easy to occur in the process of equal diameter, so that the edge of the crystal is broken; therefore, the temperature-stabilizing crucible position has direct influence on the temperature-stabilizing temperature control, determines whether the subsequent seeding can be successful and the crystal growth is smooth, and is a key process for pulling the single crystal silicon rod.
Chinese patent CN109829638A discloses an image-based crucible position control apparatus and method, wherein the crucible position is determined by multiplying the pixel value between the captured signal points by a coefficient. According to the method, the signal capturing point needs to be determined by depending on experience, the furnace internal light signal is collected through the CCD camera after the signal capturing point is determined, and the pixel value is finally output through signal conversion. The temperature-stabilizing crucible position determination results for different furnace platforms and different time have larger and unstable difference, the control capability of the temperature stabilizing process is insufficient, the normal crystallization of the single crystal is influenced, the times of edge breakage of the single crystal line can be increased in serious conditions, and the product quality can not be ensured.
Disclosure of Invention
The invention aims to solve the problem that the temperature-stabilizing crucible position is determined quickly, the technical problem that the single crystal crystallization rate is low due to the fact that the temperature-stabilizing crucible position needs to be determined manually by experience in the prior art is solved, the temperature-stabilizing crucible position can be found quickly, the precision is high, the universality is strong, the single crystal growth stability can be guaranteed, the single crystal line edge breaking frequency is reduced, the production efficiency is improved, and the product quality is guaranteed.
In order to solve the technical problems, the invention adopts the technical scheme that:
a method for rapidly determining a temperature-stable crucible position comprises the following steps:
fixing: fixing a CCD camera on the furnace cover;
calibration: adjusting the CCD camera to enable the liquid level of the silicon in the seed crystal, the guide cylinder and the quartz crucible to be projected into the graphical interface of the display and form a geometric figure, and enabling the projection center of the seed crystal to be superposed with the graphical interface center of the display;
focusing: adjusting the CCD camera to unify the size of the graphical interface of the display;
and (3) quantification: and determining and quantifying the temperature-stabilizing crucible position from the geometric figure in the graphical interface of the display.
Further, in the fixing process, the CCD camera is fixed on the furnace cover through a fixing device and is perpendicular to the outer wall of the furnace cover; the CCD camera is positioned on one side of the oblique upper part of the guide shell.
Further, the CCD camera is fixed at the same position of the fixing device, and preferably, the CCD camera is arranged at one side of the fixing device close to the central axis of the furnace cover.
Further, the calibration specifically includes:
adjusting the CCD camera, firstly placing the projections of the seed crystal and the guide cylinder in the graphical interface of the display, and simultaneously placing the projection of the silicon liquid level in the quartz crucible between the projection of the seed crystal and the guide cylinder and far away from one side of the projection of the seed crystal;
and coaxially arranging the projection center of the seed crystal and the projection center of the guide shell, and enabling the projection centers to be superposed with the center of the graphical interface of the display.
Furthermore, the graphical interface of the display is of a square structure, and the projection of the guide shell is symmetrically arranged relative to the central axis of the graphical interface of the display.
Further, the silicon liquid level projection is symmetrically arranged relative to the central longitudinal axis of the graphical interface of the display.
Further, the focusing comprises adjusting the CCD camera and unifying the size of the graphical interface of the display, so that the lengths of two end points of the horizontal diameter projected by the guide cylinder from the boundary of the graphical interface of the display are the same.
Furthermore, the lengths of the two ends of the projection horizontal diameter of the guide cylinder and the boundary of the graphical interface of the display are both 0-10 mm.
Furthermore, the quantification comprises connecting any diagonal line of the display graphical interface with a connection point of the silicon liquid level projection and the draft tube projection respectively, and enabling the connection points to be arranged in a straight line symmetry manner.
Furthermore, in the graphic interface of the display, when the linear distance of the connecting points is 12-14mm, the position of the temperature-stabilizing crucible can be determined.
The invention provides a method for rapidly determining a temperature-stable crucible position, which can quantify the temperature-stable crucible position, rapidly find the position of the temperature-stable crucible position, reduce the deviation of the temperature-stable crucible position found at different hearths and different times to the maximum extent, and ensure the consistency of the position of the temperature-stable crucible position; the temperature stabilizing process control capability is improved, the growth stability of the single crystal is ensured, the quality of the single crystal is improved, and the edge breaking frequency is reduced by 10%.
Drawings
FIG. 1 is a schematic structural diagram of a single crystal furnace for rapidly determining a stable temperature crucible position according to an embodiment of the invention;
FIG. 2 is a schematic view of a CCD camera and a fixing device according to an embodiment of the present invention;
FIG. 3 is a top view of a CCD camera and fixture assembly according to one embodiment of the present invention;
fig. 4 is a schematic structural diagram of a graphical interface of a display according to an embodiment of the present invention.
In the figure:
10. furnace cover 20, furnace body 30 and CCD camera
40. Fixing device 41, base 42, side plate
43. Adjusting bracket 431, mounting hole 44 and right-angle bracket
50. Seed crystal 60, guide cylinder 70 and silicon liquid level
80. Display 81 and display interface
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The embodiment provides a single crystal furnace capable of rapidly determining a stable temperature crucible position, which comprises a furnace cover 10 and a furnace body 20, wherein a CCD camera 30 is arranged on the outer wall of the furnace cover 10, a guide cylinder 60, a quartz crucible and a seed crystal 50 are arranged inside the furnace body 20, and a display 80 electrically connected with the CCD camera 30 is arranged on the outer side of the furnace body 20, as shown in FIG. 1. Wherein, the seed crystal 50 is arranged at the inner side of the guide cylinder 60 and is positioned right above the quartz crucible together with the guide cylinder 60, the fused silicon liquid is arranged in the quartz crucible, and the vertical distance between the guide cylinder 60 and the silicon liquid surface 70 is the position of the temperature-stabilizing crucible. The CCD camera 30 is fixedly arranged on one side of the oblique upper part of the guide shell 60, a fixing device 40 for fixing the CCD camera 30 is fixedly arranged on the outer wall of the furnace cover 10, and the fixing device 40 is parallelly fixed on the outer wall of the furnace cover 10, so that a probe of the CCD camera 30 is perpendicular to the outer wall of the furnace cover 10 and shoots inside the furnace body 20.
For different furnace platforms of the same model, the position of fixing the CCD camera 30 on the furnace cover 10 is fixed, the position of the CCD camera 30 is adjusted and fixed through the fixing device 40, and then whether the positions of the CCD camera 30 installed on the fixing device 40 are uniform or not can directly influence the consistency of the temperature-stabilizing crucible position of the guide cylinder observed by the CCD camera 30.
As shown in fig. 2-3, the CCD camera 30 is disposed on the outer wall of the furnace cover 10 through a fixing device 40, the fixing device 40 includes a base 41, a side plate 42 and an adjusting bracket 43, wherein the side plate 42 is fixedly disposed on one side of the CCD camera 30 near the opening of the upper end surface of the furnace cover 10, and the side plate 42 is connected to the base 41 and the adjusting bracket 43; the adjusting frame 43 is fixedly arranged right above the base 41, the base 41 and the adjusting frame 43 are arranged in parallel, and both the base 41 and the adjusting frame 43 are arranged perpendicular to the axis of the CCD camera 30; the CCD camera 30 is inserted through the adjusting bracket 43 and fixed to the adjusting bracket 43 on the side close to the side plate 42.
Specifically, the lower end face of the base 41 is connected to a flange on the outer wall of the furnace cover 10, the structure of the base 41 is adapted to the flange structure on the outer wall of the furnace cover 10, and glass is provided on the flange, in this embodiment, the base 41 is an oblong structure, the middle is a hollow structure, and the hollow structure is aligned with the glass surface on the flange, the probe of the CCD camera 30 penetrates through the hollow structure of the base 41 and penetrates through the glass surface to observe and shoot the silicon liquid level 70 in the quartz crucible in the furnace body 20, the projection image shot by the CCD camera 70 on the seed crystal 50 in the furnace body 20, the lower edge of the draft tube 60, and the silicon liquid level 70 in the quartz crucible is converted into a digital signal through an optical signal, and is displayed in a graphical interface 81 in a display 80.
As shown in fig. 2-3, a groove is formed on one side of the lower end surface of the base 41 close to the upper opening of the furnace cover 10, the groove is fixedly connected with the lower section surface of the side plate 42 with the L-shaped structure, the base 41 and the side plate 42 are sequentially fixed on a flange on the outer wall of the furnace cover 10 through bolts, and the side plate 42 is vertically suspended upwards perpendicular to the base 41. The adjusting bracket 43 is of a U-shaped structure, the middle face of the adjusting bracket 43 aligned with the opening is fixed at one end, far away from the base 41, of the side plate 42 through a bolt, namely the adjusting bracket 43 is fixed on the upper section part of the side plate 42, the adjusting bracket 43 is parallel to the base 41, the adjusting bracket 43 and the base 41 are both perpendicular to the end face of the side plate 42, adjustable mounting holes 431 arranged in parallel are arranged on two side edges of the adjusting bracket 43, the mounting holes 431 are arranged along the height direction of two side edges of the adjusting bracket 43, and the mounting holes 431 are of a long circular structure and are arranged in the middle positions of the. The CCD camera 70 is inserted through the adjustment bracket 43 and fixed to the adjustment bracket 43 by screws with reference to the side of the mounting hole 431 near the side plate 42. Namely, the mounting reference of the CCD cameras 30 on all the furnace covers 10 is unified, namely, the mounting positions of all the CCD cameras 30 are unified by using the mounting hole 431 near one end of the side plate 42, so that the consistency of the signal collecting positions is realized by the CCD cameras 30, and the unification of the projection positions of the seed crystal 50, the lower edge of the guide cylinder 60 and the silicon liquid level 70 is ensured.
In order to further ensure the stability of the installation of the CCD camera 30, the alignment surface on the side of the CCD camera 30 away from the side plate 42 may be connected by a right-angle frame 44 of any shape structure, and a bolt is inserted through the installation hole 431, the right-angle frame and the housing of the CCD camera 30, so that the CCD camera 30 is fixedly connected with the adjusting frame 43, and the lower end surface of the right-angle frame 44 is connected with the base 41.
As shown in FIG. 1, the CCD camera 30 is electrically connected with a display 70 arranged outside the furnace body, and the focal length of the CCD camera 70 is adjusted, so that the CCD camera 70 shoots the projection image of the seed crystal 50 in the furnace body 20, the lower edge of the guide cylinder 60 and the silicon liquid level 70 in the quartz crucible, and the projection image is converted into a digital signal through an optical signal and displayed in a graphical interface 81 in a display 80, and the structure is shown in FIG. 4. It can be seen that the projection of the seed crystal 50 and the projection of the lower edge of the guide cylinder 60 are both coaxially displayed in a graphical interface 81 in the display 80 and form a geometric figure, in the geometric figure, the projection of the seed crystal 50 is a small circular structure and is positioned at the center of the geometric figure, the projection of the lower edge of the guide cylinder 60 is a large circular structure, the projection of the lower edge of the guide cylinder 60 is displayed, the projection of the silicon liquid level 70 in the corresponding quartz crucible is positioned between the projection of the lower edge of the seed crystal 50 and the guide cylinder 60 and is far away from the projection side of the seed crystal 50, and the silicon liquid level 70 and the guide cylinder 60 form a crescent structure. And adjusting the focal length of the CCD camera 30, calibrating the projection positions of the lower edges of the seed crystal 50 and the guide cylinder 60, and enabling the projection centers of the lower edges of the seed crystal 50 and the guide cylinder 60 to be coincided with the center of a graphical interface 81 in the display 80, namely enabling the projection center of the seed crystal 50 to be coincided with the center of a geometric figure in the graphical interface 81. In the present embodiment, the display 80 is any conventional control display cooperating with the industrial CCD camera 30, and the size of the graphical interface 81 is a square structure, which is not limited herein. After the central focal length of the CCD camera 30 is adjusted, the lower edge of the guide cylinder 60 is symmetrically arranged relative to the central axis of the graphical interface 81 along the projection, and the projection of the silicon liquid level 70 is symmetrically arranged relative to the longitudinal central axis of the graphical interface 81, namely, after calibration, the intersection point of the diagonal lines of the graphical interface 81 penetrates through the center of the projection of the seed crystal 50. The consistency of the positions of the collected signals is uniformly realized by uniformly installing the fixed positions of the CCD cameras 30 and calibrating the central focal lengths of the CCD cameras 30 in all the furnace platforms, so that the projection of the seed crystal 50 is superposed with the center of the graphical interface 81.
And adjusting the focal length adjusting ring of the CCD camera 30 again, unifying the picture sizes of the geometric figures in all the graphical interfaces 81, and ensuring the maximum excircle in the geometric figures, namely the projection size of the lower edge of the guide shell 60 so as to ensure that the lengths of two end points of the horizontal diameter of the projection of the lower edge of the guide shell 60, which are respectively away from the longitudinal boundary of the graphical interface 81, are the same. As shown in fig. 4, two end points a and B of the horizontal diameter AB projected below the guide cylinder 60 are respectively the same length from two end points C and D of the transverse straight line CD in the longitudinal boundary passing through the center of the graphical interface 81, i.e., the CA segment is the same length as the BD segment. In this embodiment, the lengths of the CA section and the BD section are both 0 to 10mm, so that the adjustment ring for unifying the focal lengths of the CCD cameras 30 of all the single crystal furnaces can be ensured, the lengths of the two end points a and B of the horizontal diameter of the lower edge of the draft tube 60 from the longitudinal boundaries C and D of the graphical interface 81 are the same, respectively, and the distance from the lower edge of the draft tube 60 to the silicon liquid surface 70 is standardized, preferably, the lengths of the CA section and the BD section are 5 mm.
The central point of the graphical interface 81 is used as O, intersection points of two diagonal lines which are intersected with the projection of the silicon liquid level 70 and the lower edge of the guide cylinder 60 along the projection are E, F and G, G respectively, the connecting straight lines EF and GH of the intersection points are identical and symmetrically arranged, the distance of the connecting point straight line EF or GH is a certain value, meanwhile, the graphical interface 81 can be marked in a scale mode, the distance value of the connecting point straight line EF or GH can be directly read out, and whether the temperature-stabilizing crucible position distance is within the safety standard range can be known through directly quantized numbers. In this embodiment, the distance between the straight lines EF or GH of the connection points is 12-14 mm. The distance can quantitatively indicate that the temperature-stabilizing crucible position distance is within a safety standard range, and the actual distance from the lower edge of the guide cylinder 60 to the silicon liquid surface 70 can be determined to meet the standard, so that the consistency of temperature-stabilizing crucible positions determined in different single crystal furnaces and different time periods is ensured.
According to the single crystal furnace for quickly determining the temperature-stable crucible position, the CCD cameras 30 are installed and positioned through the fixing device 40, so that the positions of the collected signals of the CCD cameras 30 on all the single crystal furnaces are uniform; the specific structure of a geometric figure in a graphical interface 81 of the display 80 is determined by adjusting the focal length of the CCD camera 30, so that the positions of the temperature-stabilizing crucible positions can be uniformly quantized, the actual distance from the lower edge of the guide cylinder 60 to the silicon liquid surface 70 is determined to meet the standard at the fastest speed, and the consistency of the temperature-stabilizing crucible positions determined in different single crystal furnaces and different time periods is further ensured, so that the temperature-stabilizing crucible position deviation amount searched for by different furnace benches and different times is reduced to the maximum extent, and the consistency of the temperature-stabilizing crucible positions is ensured; the temperature stabilizing process control capability is improved, the growth stability of the single crystal is ensured, and the quality of the single crystal is improved.
A method for rapidly determining a temperature-stable crucible position comprises a furnace cover 10 and a furnace body 20, wherein a CCD camera 30 is arranged on the outer wall of the furnace cover 10, a seed crystal 50, a guide cylinder 60 and a quartz crucible are arranged inside the furnace body 20, a display 80 electrically connected with the CCD camera 30 is arranged on the outer side of the furnace body 20, and the method specifically comprises the following steps:
fixing: a CCD camera 30 is fixed to the outer wall of the furnace cover 10.
For different furnace platforms of the same model, the position of fixing the CCD camera 30 on the furnace cover 10 is fixed, the position of the CCD camera 30 is adjusted and fixed through the fixing device 40, and then whether the positions of the CCD camera 30 installed on the fixing device 40 are uniform or not can directly influence the consistency of the temperature-stabilizing crucible position of the guide cylinder observed by the CCD camera 30. The method specifically comprises the following steps:
as shown in fig. 2-3, the CCD camera 30 is disposed on the outer wall of the furnace cover 10 through a fixing device 40, the fixing device 40 includes a base 41, a side plate 42 and an adjusting bracket 43, wherein the side plate 42 is fixedly disposed on one side of the CCD camera 30 near the opening of the upper end surface of the furnace cover 10, and the side plate 42 is connected to the base 41 and the adjusting bracket 43; the adjusting frame 43 is fixedly arranged right above the base 41, the base 41 and the adjusting frame 43 are arranged in parallel, and both the base 41 and the adjusting frame 43 are arranged perpendicular to the axis of the CCD camera 30; the CCD camera 30 is inserted through the adjusting bracket 43 and fixed to the adjusting bracket 43 on the side close to the side plate 42.
Specifically, the lower end face of the base 41 is connected to a flange on the outer wall of the furnace cover 10, the structure of the base 41 is adapted to the flange structure on the outer wall of the furnace cover 10, and glass is provided on the flange, in this embodiment, the base 41 is an oblong structure, the middle is a hollow structure, and the hollow structure is aligned with the glass surface on the flange, the probe of the CCD camera 30 penetrates through the hollow structure of the base 41 and penetrates through the glass surface to observe and shoot the silicon liquid level 70 in the quartz crucible in the furnace body 20, the projection image shot by the CCD camera 70 on the seed crystal 50 in the furnace body 20, the lower edge of the draft tube 60, and the silicon liquid level 70 in the quartz crucible is converted into a digital signal through an optical signal, and is displayed in a graphical interface 81 in a display 80.
As shown in fig. 2-3, a groove is formed on one side of the lower end surface of the base 41 close to the upper opening of the furnace cover 10, the groove is fixedly connected with the lower section surface of the side plate 42 with the L-shaped structure, the base 41 and the side plate 42 are sequentially fixed on a flange on the outer wall of the furnace cover 10 through bolts, and the side plate 42 is vertically suspended upwards perpendicular to the base 41. The adjusting bracket 43 is of a U-shaped structure, the middle face of the adjusting bracket 43 aligned with the opening is fixed at one end, far away from the base 41, of the side plate 42 through a bolt, namely the adjusting bracket 43 is fixed on the upper section part of the side plate 42, the adjusting bracket 43 is parallel to the base 41, the adjusting bracket 43 and the base 41 are both perpendicular to the end face of the side plate 42, adjustable mounting holes 431 arranged in parallel are arranged on two side edges of the adjusting bracket 43, the mounting holes 431 are arranged along the height direction of two side edges of the adjusting bracket 43, and the mounting holes 431 are of a long circular structure and are arranged in the middle positions of the. The CCD camera 70 is inserted through the adjustment bracket 43 and fixed to the adjustment bracket 43 by screws with reference to the side of the mounting hole 431 near the side plate 42. Namely, the mounting reference of the CCD cameras 30 on all the furnace covers 10 is unified, namely, the mounting positions of all the CCD cameras 30 are unified by using the mounting hole 431 near one end of the side plate 42, so that the consistency of the signal collecting positions is realized by the CCD cameras 30, and the unification of the projection positions of the seed crystal 50, the lower edge of the guide cylinder 60 and the silicon liquid level 70 is ensured.
In order to further ensure the stability of the installation of the CCD camera 30, the alignment surface on the side of the CCD camera 30 away from the side plate 42 may be connected by a right-angle frame 44 of any shape structure, and a bolt is inserted through the installation hole 431, the right-angle frame and the housing of the CCD camera 30, so that the CCD camera 30 is fixedly connected with the adjusting frame 43, and the lower end surface of the right-angle frame 44 is connected with the base 41.
Calibration: the CCD camera 30 is adjusted to project the seed crystal 50, the guide cylinder 60 and the silicon liquid level 70 in the quartz crucible into a graphical interface 81 in the display 80 and form a geometric figure, and the projection center of the seed crystal 50 is coincident with the center of the graphical interface 81 in the display 80.
The method specifically comprises the following steps:
as shown in FIG. 1, the CCD camera 30 is electrically connected with a display 70 arranged outside the furnace body, and the focal length of the CCD camera 70 is adjusted, so that the CCD camera 70 shoots the projection image of the seed crystal 50 in the furnace body 20, the lower edge of the guide cylinder 60 and the silicon liquid level 70 in the quartz crucible, and the projection image is converted into a digital signal through an optical signal and displayed in a graphical interface 81 in a display 80, and the structure is shown in FIG. 4. It can be seen that the projection of the seed crystal 50 and the projection of the lower edge of the guide cylinder 60 are both coaxially displayed in a graphical interface 81 in the display 80 and form a geometric figure, in the geometric figure, the projection of the seed crystal 50 is a small circular structure and is positioned at the center of the geometric figure, the projection of the lower edge of the guide cylinder 60 is a large circular structure, the projection of the lower edge of the guide cylinder 60 is displayed, the projection of the silicon liquid level 70 in the corresponding quartz crucible is positioned between the projection of the lower edge of the seed crystal 50 and the guide cylinder 60 and is far away from the projection side of the seed crystal 50, and the silicon liquid level 70 and the guide cylinder 60 form a crescent structure.
And adjusting the focal length of the CCD camera 30, calibrating the projection positions of the lower edges of the seed crystal 50 and the guide cylinder 60, and enabling the projection centers of the lower edges of the seed crystal 50 and the guide cylinder 60 to be coincided with the center of a graphical interface 81 in the display 80, namely enabling the projection center of the seed crystal 50 to be coincided with the center of a geometric figure in the graphical interface 81.
In the present embodiment, the display 80 is any conventional control display cooperating with the industrial CCD camera 30, and the size of the graphical interface 81 is a square structure, which is not limited herein. After the central focal length of the CCD camera 30 is adjusted, the lower edge of the guide cylinder 60 is symmetrically arranged relative to the central axis of the graphical interface 81 along the projection, and the projection of the silicon liquid level 70 is symmetrically arranged relative to the longitudinal central axis of the graphical interface 81, namely, after calibration, the intersection point of the diagonal lines of the graphical interface 81 penetrates through the center of the projection of the seed crystal 50. The consistency of the positions of the collected signals is uniformly realized by uniformly installing the fixed positions of the CCD cameras 30 and calibrating the central focal lengths of the CCD cameras 30 in all the furnace platforms, so that the projection of the seed crystal 50 is superposed with the center of the graphical interface 81.
Focusing: the focus of the CCD camera 30 is adjusted to unify the size of the graphical interface 81 in the display 80.
Specifically, the focal length adjustment ring of the CCD camera 30 is adjusted again, the sizes of the pictures of the geometric figures in all the graphical interfaces 81 are unified, and the maximum outer circle in the geometric figures, i.e., the projection size of the lower edge of the draft tube 60, is ensured, so as to ensure that the lengths of the two end points of the horizontal diameter of the lower edge of the draft tube 60, which are respectively away from the longitudinal boundary of the graphical interface 81, are the same. As shown in fig. 4, two end points a and B of the horizontal diameter AB projected below the guide cylinder 60 are respectively the same length from two end points C and D of the transverse straight line CD in the longitudinal boundary passing through the center of the graphical interface 81, i.e., the CA segment is the same length as the BD segment. In this embodiment, the lengths of the CA section and the BD section are both 0 to 10mm, so that the adjustment ring for unifying the focal lengths of the CCD cameras 30 of all the single crystal furnaces can be ensured, the lengths of the two end points a and B of the horizontal diameter of the lower edge of the draft tube 60 from the longitudinal boundaries C and D of the graphical interface 81 are the same, respectively, and the distance from the lower edge of the draft tube 60 to the silicon liquid surface 70 is standardized, preferably, the lengths of the CA section and the BD section are 5 mm.
And (3) quantification: the temperature stable crucible position is determined and quantified from the geometry in the graphical interface 81 of the display 80.
The central point of the graphical interface 81 is used as O, intersection points of two diagonal lines which are intersected with the projection of the silicon liquid level 70 and the lower edge of the guide cylinder 60 along the projection are E, F and G, G respectively, the connecting straight lines EF and GH of the intersection points are identical and symmetrically arranged, the distance of the connecting point straight line EF or GH is a certain value, meanwhile, the graphical interface 81 can be marked in a scale mode, the distance value of the connecting point straight line EF or GH can be directly read out, and whether the temperature-stabilizing crucible position distance is within the safety standard range can be known through directly quantized numbers. In this embodiment, the distance between the straight lines EF or GH of the connection points is 12-14 mm. The distance can quantitatively indicate that the temperature-stabilizing crucible position distance is within a safety standard range, and the actual distance from the lower edge of the guide cylinder 60 to the silicon liquid surface 70 can be determined to meet the standard, so that the consistency of temperature-stabilizing crucible positions determined in different single crystal furnaces and different time periods is ensured.
The number of times of edge breakage of the single crystal is expressed by the crystallization rate of the single crystal silicon rod, and the crystallization rate of the single crystal silicon rod pulled after the temperature-stabilizing crucible position is determined according to the method in the embodiment is compared with the crystallization rate of the single crystal silicon rod pulled after the temperature-stabilizing crucible position is determined by the prior art, and the obtained data is shown in table 1. As can be seen from Table 1, in both the shoulder expanding and the integral drawing processes, the crystallization rates of the first-stage drawing and the second-stage drawing are higher than the crystallization rate of the prior art, and compared with the prior art, the single crystal crystallization rate obtained by the method can be improved by 10%, and further the edge breakage times of the single crystal silicon rod drawn by the method are reduced by nearly 10%. And the rod-shaping rate is higher than that obtained in the prior art in the first-stage or second-stage drawing process, and compared with the prior art, the rod-shaping rate obtained by the method is improved by 4-5%. Furthermore, the method for rapidly determining the temperature-stabilizing crucible position can improve the consistency of the temperature-stabilizing crucible position and the quality of the single crystal silicon rod, reduce the edge breaking times of the obtained single crystal silicon rod by 10 percent, improve the production efficiency and reduce the production cost.
TABLE 1 comparison of the crystallization rates of the single crystal silicon rods drawn in this example with those of the prior art
The invention provides a method for rapidly determining a temperature-stable crucible position, which can quantify the temperature-stable crucible position, rapidly find the position of the temperature-stable crucible position, reduce the deviation of the temperature-stable crucible position found at different hearths and different times to the maximum extent, and ensure the consistency of the position of the temperature-stable crucible position; the temperature stabilizing process control capability is improved, the growth stability of the single crystal is ensured, the quality of the single crystal is improved, the edge breaking frequency is reduced by 10 percent, and the production cost is reduced.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A method for rapidly determining a temperature-stable crucible position is characterized by comprising the following steps:
fixing: fixing a CCD camera on the furnace cover;
calibration: adjusting the CCD camera to enable the liquid level of the silicon in the seed crystal, the guide cylinder and the quartz crucible to be projected into the graphical interface of the display and form a geometric figure, and enabling the projection center of the seed crystal to be superposed with the graphical interface center of the display;
focusing: adjusting the CCD camera to unify the size of the graphical interface of the display;
and (3) quantification: and determining and quantifying the temperature-stabilizing crucible position from the geometric figure in the graphical interface of the display.
2. The method for quickly determining the temperature-stable crucible position as claimed in claim 1, wherein in the fixing process, the CCD camera is fixed on the furnace cover through a fixing device and is arranged perpendicular to the outer wall of the furnace cover; the CCD camera is positioned on one side of the oblique upper part of the guide shell.
3. The method for rapidly determining the temperature-stable crucible position as claimed in claim 2, wherein the CCD camera is fixed at the same position of the fixing device, and preferably the CCD camera is arranged at one side of the fixing device close to the central axis of the furnace cover.
4. The method for rapidly determining the temperature-stable pot position according to any one of claims 1 to 3, wherein the calibration specifically comprises:
adjusting the CCD camera, firstly placing the projections of the seed crystal and the guide cylinder in the graphical interface of the display, and simultaneously placing the projection of the silicon liquid level in the quartz crucible between the projection of the seed crystal and the guide cylinder and far away from one side of the projection of the seed crystal;
and coaxially arranging the projection center of the seed crystal and the projection center of the guide shell, and enabling the projection centers to be superposed with the center of the graphical interface of the display.
5. The method for rapidly determining the temperature-stable crucible position as claimed in claim 4, wherein in the calibration process, the graphical interface of the display is in a square structure, and the projection of the guide cylinder is symmetrically arranged relative to the central axis of the graphical interface of the display.
6. The method for quickly determining a temperature-stable pot position as claimed in claim 5, wherein during said calibration, said silicon level projection is symmetrically disposed with respect to said display graphical interface longitudinal central axis.
7. The method for rapidly determining the temperature-stable crucible position according to any one of claims 1-3 and 5-6, wherein the focusing comprises adjusting the CCD camera and unifying the size of the graphical interface of the display, so that the lengths of two end points of the horizontal diameter projected by the guide cylinder from the boundary of the graphical interface of the display are the same.
8. The method for rapidly determining the temperature-stable pot position according to claim 7, wherein the lengths of both ends of the projected horizontal diameter of the guide cylinder from the boundary of the graphical interface of the display are 0-10 mm.
9. The method for rapidly determining the temperature-stable pot position according to claim 8, wherein the quantification comprises connecting any diagonal line of the graphical interface of the display with the connecting points of the silicon liquid level projection and the guide cylinder projection respectively, and enabling the connecting points to be arranged in a straight line symmetry manner.
10. The method for quickly determining the temperature-stable pot position according to claim 9, wherein the temperature-stable pot position can be determined when the straight-line distance of the connection points in the display graphic interface is 12-14 mm.
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Cited By (1)
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| CN111893562A (en) * | 2020-08-14 | 2020-11-06 | 内蒙古中环领先半导体材料有限公司 | Single crystal furnace pulling head calibration device and calibration method |
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