CN110004492B - Crystal growth furnace and monitoring method thereof - Google Patents
Crystal growth furnace and monitoring method thereof Download PDFInfo
- Publication number
- CN110004492B CN110004492B CN201910336795.6A CN201910336795A CN110004492B CN 110004492 B CN110004492 B CN 110004492B CN 201910336795 A CN201910336795 A CN 201910336795A CN 110004492 B CN110004492 B CN 110004492B
- Authority
- CN
- China
- Prior art keywords
- data
- furnace
- image data
- crystal growth
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
Abstract
The invention provides a crystal growth furnace and a monitoring method in the crystal growth furnace, wherein the method comprises the following steps: receiving first image data, second image data and third image data of the image equipment in each window; the first image data is image data of the single crystal silicon rod; the second image data is image data of molten polysilicon; the third image data is image data of the crucible; receiving size data collected by size measuring equipment in each window; the dimensional data includes: diameter data of the single crystal silicon rod; receiving displacement data of the crystal pulling line acquired by displacement acquisition equipment; receiving environment information collected by environment monitoring equipment at each window; generating a three-dimensional image of the single crystal silicon rod according to the first image data, the diameter data of the single crystal silicon rod and the displacement data; and storing the environment information corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the environment information. The condition of each direction in the crystal growth furnace can be observed through the three-dimensional visual image, and comprehensive monitoring is realized.
Description
Technical Field
The invention relates to the technical field of monitoring, in particular to a crystal growth furnace and a monitoring method thereof.
Background
Monocrystalline silicon is an important raw material in the fields of semiconductor integrated circuits, sensors, photovoltaics and the like, and can be obtained through a crystal growth furnace seeding process. By seeding the polycrystalline silicon with disordered lattice directions, monocrystalline silicon with uniform lattice directions can be obtained. During seeding, the environment inside the crystal growing furnace plays a crucial role in the orientation of the crystal lattice, which directly affects the quality of the single crystal silicon. Therefore, in the process of preparing single crystals, the environment in the crystal growth furnace needs to be detected in real time.
At present, a single window is arranged on a crystal growth furnace, and a camera is arranged at the window to monitor the environment in the furnace body in real time.
Although the prior art has played certain monitoring effect to the environment in the crystal growing furnace, the angle that the camera that prior art set up can monitor is limited, because it is in the crystal growing furnace of major diameter, has a lot of monitoring dead angles, is difficult to monitor the crystallization environment in the crystal growing furnace comprehensively.
Disclosure of Invention
The invention aims to provide a crystal growth furnace monitoring method and a crystal growth furnace aiming at the defects in the prior art, and aims to solve the problems that monitoring dead angles exist in the crystal growth furnace and the crystallization environment in the crystal growth furnace is difficult to monitor comprehensively.
In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:
in a first aspect, embodiments of the present invention provide a method for monitoring in a crystal growth furnace, in which a single crystal silicon rod and a crystal pulling wire are fixedly disposed, molten polycrystalline silicon is disposed in a crucible, and the crystal growth furnace includes a plurality of windows; the image equipment, the size measuring equipment, the displacement acquisition equipment and the environment monitoring equipment are integrated in the detection unit; the detection unit is arranged on the track; the track is fixedly arranged on the outer wall of the crystal growth furnace; the detection unit moves among the windows through the track; the method comprises the following steps: receiving in-furnace image data collected by the imaging device at each window; the in-furnace image data includes: first image data, second image data, and third image data; the first image data is image data of a single crystal silicon rod; the second image data is image data of molten polycrystalline silicon; the third image data is image data of the crucible; receiving size data collected by the size measuring equipment in each window; the size data includes: diameter data of the single crystal silicon rod, diameter data of the crystal growth furnace and height data of the crystal growth furnace; receiving displacement data of the crystal pulling line, which is acquired by the displacement acquisition equipment; receiving environment information collected by the environment monitoring equipment in each window; generating a three-dimensional image of the single crystal silicon rod according to the first image data, the diameter data of the single crystal silicon rod and the displacement data; and storing the environment information corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the environment information.
Optionally, the environment monitoring device comprises: a temperature sensor; the environmental information is temperature data collected by the temperature sensor at each window.
Optionally, the storing the environment information corresponding to each coordinate point according to the mapping relationship between each coordinate point on the three-dimensional image and the environment information includes: and storing the temperature data corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the temperature data.
Optionally, the environment monitoring device comprises: a laser displacement sensor; the environment information is the vibration information of the single crystal silicon rod collected by the laser displacement sensor at each window.
Optionally, the storing the environment information corresponding to each coordinate point according to the mapping relationship between each coordinate point on the three-dimensional image and the environment information includes: and storing the vibration information corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the vibration information.
Optionally, the environment information includes: liquid level information; the method further comprises the following steps: acquiring the liquid level information of each window according to the laser displacement sensor; the liquid level information is the liquid level information of the molten polycrystalline silicon in the crucible.
In a second aspect, an embodiment of the present invention further provides a crystal growth furnace, including: the device comprises a furnace body, a track, a detection unit, a driving device, a plurality of windows and a controller; the track is arranged on the outer wall of the furnace body; the detection unit is arranged on the track, and the controller controls the driving device to drive the detection unit to move on the track; the detection unit detects furnace interior information in the furnace through the windows and sends the furnace interior information to the controller; the furnace interior information is the working condition information in the furnace body.
Optionally, the in-furnace information includes: image data, diameter data, displacement data, and environmental information; the detection unit includes: the system comprises an imaging device, a size measuring device, a displacement acquisition device and an environment monitoring device; the imaging device is used for acquiring in-furnace image data in the windows; the size measuring device is used for collecting size data in the plurality of windows; the size data includes: diameter data of the single crystal silicon rod, diameter data of the crystal growth furnace and height data of the crystal growth furnace; the displacement acquisition equipment is used for acquiring the displacement data of the crystal pulling line; and the environment monitoring equipment is used for acquiring the environment information in the furnace.
Optionally, the environment information includes: temperature data and/or vibration information; the environment monitoring device includes: a temperature sensor and/or a laser displacement sensor; the temperature sensor is used for acquiring the temperature data in the furnace; the laser displacement sensor is used for acquiring the vibration information of the single crystal silicon rod.
Optionally, the crystal growth furnace further comprises: a crucible; the crucible is arranged inside the furnace body.
Optionally, the crystal growth furnace further comprises: a heating device; the heating device is arranged at the bottom of the crucible.
According to the monitoring method in the crystal growth furnace and the crystal growth furnace, the three-dimensional image of the single crystal silicon rod is established by acquiring the image data and the diameter data in the furnace and the displacement data of the crystal pulling wire at each window, the acquired environmental information is stored in the three-dimensional image, and the crystallization environment in the crystal growth furnace can be comprehensively monitored by observing the three-dimensional image and the acquired information in the crystal growth furnace.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural view of a crystal growth furnace according to an embodiment of the present application;
FIG. 2 is a top view of a crystal growth furnace according to an embodiment of the present application;
FIG. 3 is a schematic structural diagram of an environmental monitoring apparatus of a crystal growth furnace according to an embodiment of the present application;
FIG. 4 is a schematic flow chart of a monitoring method in a crystal growth furnace according to an embodiment of the present application;
FIG. 5 is a schematic flow chart of a monitoring method in a crystal growth furnace according to another embodiment of the present application;
fig. 6 is a schematic flow chart of a monitoring method in a crystal growth furnace according to still another embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
Fig. 1 is a schematic structural diagram of a crystal growth furnace according to an embodiment of the present application, and as shown in fig. 1, the crystal growth furnace includes: the furnace body 1, the track 2, the detection unit 3, the driving device 4, the plurality of windows 5 and the controller 6.
The track 2 is arranged on the outer wall of the furnace body 1. The detection unit 3 is arranged on the track 2, and the controller 6 controls the driving device 4 to drive the detection unit 3 to move on the track 2; the detection unit 3 detects furnace interior information in the furnace through the plurality of windows 5 and transmits the furnace interior information to the controller 6. Wherein, the in-furnace information is the working condition information in the furnace body.
Optionally, fig. 2 is a top view of the crystal growth furnace provided in an embodiment of the present application, and as shown in fig. 2, 5 windows 5 may be provided.
Optionally, fig. 3 is a schematic structural diagram of an environment monitoring device of a crystal growth furnace according to an embodiment of the present application. The in-furnace information includes: in-furnace image data, diameter data, displacement data, and environmental information. The in-furnace image data includes: first image data, second image data, and third image data. The first image data is image data of the single crystal silicon rod. The second image data is image data of molten polysilicon. The third image data is image data of the crucible. As shown in fig. 3, the detection unit 3 includes: an imaging device 310, a dimension measuring device 320, a displacement acquisition device 330 and an environment monitoring device 340.
And the imaging device 310 is used for acquiring the image data in the furnace in a plurality of windows.
A size measuring device 320 for collecting size data at a plurality of windows. The dimensional data includes: diameter data of the single crystal silicon rod, diameter data of the crystal growth furnace and height data of the crystal growth furnace.
And the displacement acquisition equipment 330 is used for acquiring displacement data of the crystal pulling wire 8.
And the environment monitoring device 340 is used for acquiring the environment information in the furnace. Optionally, the environment information includes: temperature data and/or vibration information. As shown in fig. 3, the environment monitoring device 340 includes: a temperature sensor 341 and/or a laser displacement sensor 342.
And a temperature sensor 341 for acquiring temperature data in the furnace. And the laser displacement sensor 342 is used for acquiring vibration information of the single crystal silicon rod 7.
Optionally, when it is necessary to collect environmental information in the crystal growth furnace, besides temperature data and vibration information, the displacement collecting device 330 may further be provided with other modules.
Optionally, the crystal growth furnace further comprises: a crucible 9. The crucible 9 is disposed inside the furnace body 1.
Optionally, the crystal growth furnace further comprises: the device 10 is heated. The heating device 10 is disposed around the crucible 9 and uniformly heats the crucible 9.
According to the crystal growth furnace, the controller 6 controls the driving device 4 to drive the detection unit 3 to move between the windows 5 on the track 2, environmental information such as temperature data and vibration information in the crystal growth furnace is collected through the windows 5, and first image data, diameter data of the single crystal silicon rod 7, displacement data of the crystal pulling wire 8 and environmental information in the furnace are collected, so that the monitoring of the crystallization environment in the crystal growth furnace is realized.
The crystal growth furnace is used for executing the monitoring method in the crystal growth furnace provided by the following embodiments. Specifically, the monitoring method in the crystal growth furnace provided by the application is characterized in that a single crystal silicon rod and a crystal pulling wire are fixedly arranged in the crystal growth furnace. The crystal furnace comprises a plurality of windows; the image equipment, the size measuring equipment, the displacement acquisition equipment and the environment monitoring equipment are integrated in the detection unit; the detection unit is arranged on the track; the track is fixedly arranged on the outer wall of the crystal growth furnace; the detection unit moves between the windows through the rail.
Optionally, 2-5 windows can be arranged and uniformly arranged on the furnace wall of the crystal growth furnace.
Optionally, a temperature sensor 342 is also used to collect the level temperature of the molten polysilicon. Based on the possible implementation manners of the crystal growth furnace and the environment monitoring device in the foregoing embodiment, a possible implementation manner of the monitoring method in the crystal growth furnace is given below, a flow of the method may be executed by the controller 6 in fig. 1, specifically, fig. 4 is a schematic flow diagram of the monitoring method in the crystal growth furnace provided in an embodiment of the present application, and as shown in fig. 4, the method includes:
s101, receiving in-furnace image data collected by the imaging equipment in each window. The in-furnace image data includes: first image data, second image data, and third image data. The first image data is image data of the single crystal silicon rod. The second image data is image data of molten polysilicon. The third image data is image data of the crucible.
Alternatively, the imaging Device may adopt a CCD (Charge Coupled Device) camera, which has the advantages of strong light resistance, small size and the like, and is suitable for a working environment with strong brightness in a crystal growth furnace.
The monitoring of the inner environments of the furnace such as the monocrystalline silicon rod, the molten polycrystalline silicon, the crucible and the like in the furnace can be realized by the operator through the acquired image data in the furnace.
S102, receiving size data collected by size measuring equipment in each window. The dimensional data includes: diameter data of the single crystal silicon rod, diameter data of the crystal growth furnace and height data of the crystal growth furnace.
Alternatively, the dimension measuring device may be a laser displacement sensor, a photoelectric rotation speed sensor, or the like.
Alternatively, the diameter data of the measured single crystal silicon may be diameter data of the single crystal silicon rod at the molten polycrystalline silicon.
Alternatively, when the dimension measuring apparatus is a laser displacement sensor, it is difficult to confirm the actual position of the single crystal silicon rod because light generated due to a relatively high temperature in the crystal growth furnace interferes with the measurement of the laser displacement sensor. Therefore, the diameter data of the single crystal silicon rod collected by the laser displacement sensor can be corrected by adopting the imaging equipment. Specifically, a picture of the single crystal silicon rod is acquired through an imaging device, the diameter boundary position of the single crystal silicon rod is determined, and the information of the diameter boundary position measured in the laser displacement sensor is selected as the diameter data of the single crystal silicon rod.
S103, receiving the displacement data of the crystal pulling line collected by the displacement collecting equipment.
Because the single crystal silicon rod and the crystal pulling wire are fixedly arranged, the displacement data of the crystal pulling wire is the displacement data of the single crystal silicon rod. For example, the displacement data of the pulling wire is 5 cm, and similarly, the single crystal silicon rod is moved up by 5 cm, which represents that the single crystal silicon rod grows by 5 cm. The displacement acquisition equipment directly tests the displacement data of the crystal pulling wire, and actually indirectly tests the displacement data of the single crystal silicon rod.
Alternatively, the displacement acquisition device may be a laser displacement sensor.
And S104, receiving the environmental information collected by the environmental monitoring equipment in each window.
The image equipment, the size measuring equipment and the environment monitoring equipment in the steps are all collected in each window. The detection unit moves on the track, so that the detection unit can collect data at each window, and the environment in the crystal growth furnace can be monitored in an all-round manner.
And S105, generating a three-dimensional image of the silicon single crystal rod according to the first image data, the diameter data of the silicon single crystal rod and the displacement data.
From the diameter data and the displacement data of the single crystal silicon rod, an external configuration of the single crystal silicon rod can be determined. And by combining the image data, the external appearance of the silicon single crystal rod can be reflected more truly.
And S106, storing the environment information corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the environment information.
It should be noted that the imaging device, the size measuring device, the displacement collecting device, and the environment monitoring device are integrated on the same detection unit to ensure that the collected environment information corresponds to the coordinate point.
It should be noted that, because the temperature in the furnace is high, the equipment capable of remotely acquiring the diameter data, the displacement data and the environmental information is selected to ensure that the equipment can normally work.
According to the monitoring method in the crystal growth furnace provided by the embodiment, the three-dimensional image of the single crystal silicon rod is established by acquiring the first image data and the diameter data of the single crystal silicon rod at each window and acquiring the displacement data of the crystal pulling wire, and the acquired environmental information is stored in the three-dimensional image. The crystallization environment in the crystal growth furnace can be comprehensively monitored by observing the three-dimensional image, the acquired image data in the furnace and the size data.
Optionally, the environmental monitoring device comprises: a temperature sensor. The environmental information is temperature data collected by the temperature sensor in each window.
Wherein the temperature data may include: the temperature of parts in the crystal growth furnace, the temperature of all positions of the liquid level of the molten polycrystalline silicon, the crystal growth temperature of the silicon rod and the liquid level of the molten silicon and the temperature of all positions of the grown monocrystalline silicon.
Alternatively, the temperature data collected by the temperature sensor may be calibrated using an imaging device. Specifically, since the displayed colors of different temperatures in the crystal growth furnace are different, an image device can be used for collecting images in the crystal growth furnace, and the temperatures of different color areas can be determined according to the color information of the collected images. And if the difference value between the temperature obtained through the color area and the temperature data obtained by the temperature sensor is within a preset difference value range, determining that the temperature acquired by the temperature sensor is reasonable.
Further, fig. 5 is a schematic flow chart of a monitoring method in a crystal growth furnace according to another embodiment of the present application, and as shown in fig. 5, S106 includes:
s106-1, storing the temperature data corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the temperature data.
When the single crystal silicon rod is crystallized in the crystal growth furnace, the temperature is an important factor influencing the crystallization quality, and the temperature is monitored, so that the crystal growth efficiency of the single crystal silicon rod is improved, and the crystal lattice defects are reduced. In the embodiment, the single vector temperature is modeled, an operator can obtain the crystal growth temperature by checking the temperature data of the coordinate point on the three-dimensional image, and when the threshold interval where the temperature is located is not beneficial to the crystal growth quality of the single crystal silicon rod, the temperature in the crystal growth furnace can be regulated and controlled.
And storing the temperature of the components in the crystal growth furnace, the temperature of each part of the liquid level of the molten polycrystalline silicon and the crystal growth temperature of the liquid level of the silicon rod and the molten silicon to corresponding positions. An operator can acquire temperature data by looking up the temperature sensor to know the temperature conditions of all places in the crystal growth furnace.
Optionally, the environmental monitoring device comprises: laser displacement sensor. The environmental information is the vibration information of the single crystal silicon rod collected by the laser displacement sensor at each window.
Further, fig. 6 is a schematic flow chart of a monitoring method in a crystal growth furnace according to another embodiment of the present application, and as shown in fig. 6, S106 includes:
s106-2, storing the vibration information corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the vibration information.
When the single crystal silicon rod is not uniformly crystallized, for example, one side of the single crystal silicon rod is crystallized at a high speed and the other side of the single crystal silicon rod is crystallized at a low speed, the single crystal silicon rod is laterally vibrated when being pulled. And detecting that the vibration information is transverse vibration on the coordinate point, which indicates that the crystallization is not uniform, and causes crystal lattice defects of the silicon single crystal rod. The vibration information of each coordinate point can be checked through each coordinate point on the three-dimensional image, and when the transverse vibration occurs, the crystallization is suspended in time or the crystal pulling line in the crystal growing furnace is adjusted.
Optionally, the temperature data and the vibration information corresponding to the coordinate point can be simultaneously stored in the same coordinate point, so that the two-item modeling is realized. When the environment monitoring equipment also comprises other equipment except the temperature sensor and the laser displacement sensor, multiple items of modeling can be realized, and the simultaneous monitoring of multiple physical quantities is realized.
Further, the environment information includes: liquid level information. The method further comprises the following steps:
and acquiring the liquid level information of each window according to the laser displacement sensor. The liquid level information is the liquid level information of the molten polycrystalline silicon in the crucible.
Alternatively, it is difficult to confirm the actual position of the liquid level because light generated due to a higher temperature in the crystal growth furnace interferes with the measurement of the laser displacement sensor. Therefore, the liquid level information collected by the laser displacement sensor can be corrected by adopting the imaging equipment. Specifically, pictures of the liquid level and the crystallization position of the single crystal silicon rod are collected through an imaging device, the boundary position of the liquid level is determined, and information of the boundary position measured in a laser displacement sensor is selected as liquid level information.
Optionally, when the liquid level data in the liquid level information is lower than a preset value, an operator can be prompted in a text or voice prompting mode to finish the crystallization.
The monitoring method in the crystal growth furnace provided by this embodiment can monitor the crystal growth environment in the crystal growth furnace by monitoring the crystallization information, such as temperature data or vibration information, of each coordinate point of the three-dimensional model, and if the detected crystallization environment is not favorable for the growth of the single crystal silicon rod, the crystallization environment needs to be adjusted or recrystallized. The quality of the single crystal silicon rod is ensured by monitoring the crystallization environment in the crystal growth furnace.
Claims (9)
1. A monitoring method in a crystal growth furnace is characterized in that a single crystal silicon rod and a crystal pulling wire are fixedly arranged, and molten polycrystalline silicon is placed in a crucible; the image equipment, the size measuring equipment, the displacement acquisition equipment and the environment monitoring equipment are integrated in the detection unit; the detection unit is arranged on the track; the track is fixedly arranged on the outer wall of the crystal growth furnace; the detection unit moves among the windows through the track; the method comprises the following steps:
receiving in-furnace image data collected by the imaging device at each window; the in-furnace image data includes: first image data, second image data, and third image data; the first image data is image data of a single crystal silicon rod; the second image data is image data of molten polycrystalline silicon; the third image data is image data of the crucible;
receiving size data collected by the size measuring equipment in each window; the size data includes: diameter data of the single crystal silicon rod, diameter data of the crystal growth furnace and height data of the crystal growth furnace;
receiving displacement data of the crystal pulling line, which is acquired by the displacement acquisition equipment;
receiving environment information collected by the environment monitoring equipment in each window;
generating a three-dimensional image of the single crystal silicon rod according to the first image data, the diameter data of the single crystal silicon rod and the displacement data;
and storing the environment information corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the environment information.
2. The in-crystal growth furnace monitoring method according to claim 1, wherein the environment monitoring apparatus comprises: a temperature sensor; the environmental information is temperature data collected by the temperature sensor at each window.
3. The method for monitoring inside of a crystal growth furnace according to claim 2, wherein the storing the environment information corresponding to each coordinate point according to the mapping relationship between each coordinate point on the three-dimensional image and the environment information comprises:
and storing the temperature data corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the temperature data.
4. The in-crystal growth furnace monitoring method according to claim 1, wherein the environment monitoring apparatus comprises: a laser displacement sensor; the environment information is the vibration information of the single crystal silicon rod collected by the laser displacement sensor at each window.
5. The method for monitoring in a crystal growth furnace according to claim 4, wherein the storing the environmental information corresponding to each coordinate point according to the mapping relationship between each coordinate point on the three-dimensional image and the environmental information comprises:
and storing the vibration information corresponding to each coordinate point according to the mapping relation between each coordinate point on the three-dimensional image and the vibration information.
6. The in-crystal growth furnace monitoring method according to claim 4, wherein the environmental information includes: liquid level information; further comprising:
acquiring the liquid level information of each window according to the laser displacement sensor; the liquid level information is the liquid level information of the molten polycrystalline silicon in the crucible.
7. A crystal growth furnace is characterized by comprising: the device comprises a furnace body, a track, a detection unit, a driving device, a plurality of windows and a controller;
the track is arranged on the outer wall of the furnace body; the detection unit is arranged on the track, and the controller controls the driving device to drive the detection unit to move on the track; the detection unit detects furnace interior information in the furnace through the windows and sends the furnace interior information to the controller; the furnace interior information is the working condition information in the furnace body;
the in-furnace information includes: image data, diameter data, displacement data, and environmental information; the detection unit includes: the system comprises an imaging device, a size measuring device, a displacement acquisition device and an environment monitoring device;
the imaging device is used for acquiring in-furnace image data in the windows;
the size measuring device is used for collecting size data in the plurality of windows; the size data includes: diameter data of the single crystal silicon rod, diameter data of the crystal growth furnace and height data of the crystal growth furnace;
the displacement acquisition equipment is used for acquiring the displacement data of the crystal pulling line;
and the environment monitoring equipment is used for acquiring the environment information in the furnace.
8. The crystal growth furnace of claim 7, wherein the environmental information comprises: temperature data and/or vibration information; the environment monitoring device includes: a temperature sensor and/or a laser displacement sensor;
the temperature sensor is used for acquiring the temperature data in the furnace;
the laser displacement sensor is used for acquiring the vibration information of the single crystal silicon rod.
9. The crystal growth furnace of claim 7, further comprising: a crucible;
the crucible is arranged inside the furnace body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910336795.6A CN110004492B (en) | 2019-04-25 | 2019-04-25 | Crystal growth furnace and monitoring method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910336795.6A CN110004492B (en) | 2019-04-25 | 2019-04-25 | Crystal growth furnace and monitoring method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110004492A CN110004492A (en) | 2019-07-12 |
| CN110004492B true CN110004492B (en) | 2020-06-09 |
Family
ID=67174242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910336795.6A Active CN110004492B (en) | 2019-04-25 | 2019-04-25 | Crystal growth furnace and monitoring method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110004492B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112080795A (en) * | 2020-09-16 | 2020-12-15 | 浙江晶阳机电股份有限公司 | Crystal bar falling prevention operation method and crystal growth furnace with crystal bar falling prevention clamping device |
| CN113049082B (en) * | 2021-02-08 | 2022-03-08 | 杭州富加镓业科技有限公司 | Detection method of seed crystal rod jitter detection device and crystal growth method |
| CN113638041B (en) * | 2021-08-18 | 2022-08-02 | 西安奕斯伟材料科技有限公司 | Method, device and equipment for controlling crystal growth diameter and computer storage medium |
| CN117187945A (en) * | 2023-09-08 | 2023-12-08 | 万华化学集团股份有限公司 | Method, device and system for monitoring silicon crystal processing of crystal growth furnace |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01126295A (en) * | 1987-11-11 | 1989-05-18 | Kawasaki Steel Corp | Apparatus for producing single crystal |
| JPH0777996B2 (en) * | 1990-10-12 | 1995-08-23 | 信越半導体株式会社 | Cone part growing control method and device |
| JP2959543B2 (en) * | 1997-12-12 | 1999-10-06 | 日本電気株式会社 | Semiconductor single crystal growing apparatus and crystal growing method |
| GB9810207D0 (en) * | 1998-05-14 | 1998-07-08 | Secr Defence | Crystal growth apparatus and method |
| CN100371507C (en) * | 2005-03-28 | 2008-02-27 | 荀建华 | System and method for controlling the isodiametric growth of crystal |
| CN2913393Y (en) * | 2006-05-30 | 2007-06-20 | 北京京运通真空设备厂 | Control device for monocrystalline silicon furnace |
| KR101774625B1 (en) * | 2010-12-30 | 2017-09-04 | 썬에디슨, 인크. | Measuring a crystal growth feature using multiple cameras |
| CN202175742U (en) * | 2011-07-12 | 2012-03-28 | 常州江南电力光伏科技有限公司 | Full-automatic silicon single crystal growing furnace |
| JP6078974B2 (en) * | 2012-04-04 | 2017-02-15 | 株式会社Sumco | Method for producing silicon single crystal |
| CN202809000U (en) * | 2012-08-20 | 2013-03-20 | 无锡力汇光电科技有限公司 | Automatic switching device for cameras of single crystal furnace |
| CN205223405U (en) * | 2015-09-02 | 2016-05-11 | 陕西西京电子科技有限公司 | Linear guide calibrates appearance for single crystal growing furnace |
| CN107815729A (en) * | 2016-09-12 | 2018-03-20 | 上海新昇半导体科技有限公司 | A kind of single crystal growing furnace |
-
2019
- 2019-04-25 CN CN201910336795.6A patent/CN110004492B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110004492A (en) | 2019-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110004492B (en) | Crystal growth furnace and monitoring method thereof | |
| JP4253117B2 (en) | Method and apparatus for controlling the growth of silicon crystals | |
| US9284660B2 (en) | Apparatus of producing silicon single crystal and method of producing silicon single crystal | |
| JP2002527341A (en) | Method and system for controlling silicon crystal growth | |
| CN101748478B (en) | Method for measuring horizontal plane relative height of silicon melt in crucible | |
| KR20130133261A (en) | Measuring a crystal growth feature using multiple cameras | |
| CN102912429A (en) | Measurement control system for diameter of Czochralski grown monocrystalline germanium | |
| CN108570706A (en) | The grower and its growing method of heavy caliber CZ monocrystalline | |
| US7573587B1 (en) | Method and device for continuously measuring silicon island elevation | |
| JP2003176199A (en) | Apparatus and method for pulling single crystal | |
| JP4056206B2 (en) | Ribbon crystal growth method and apparatus | |
| KR101605590B1 (en) | View port for observing ingot growing process and ingot growing apparatus having the same | |
| CN212018330U (en) | Automatic spraying system | |
| CN113029014B (en) | Method and device for detecting diameter of single crystal silicon rod | |
| JPS58135197A (en) | Apparatus for preparing crystal | |
| CN114808115B (en) | Liquid mouth distance measuring method and liquid mouth distance testing device | |
| WO2022185789A1 (en) | Method for detecting state of surface of raw material melt, method for producing monocrystal, and cz monocrystal production device | |
| KR102147462B1 (en) | Apparatus for growing monocrystalline ingot | |
| KR20180005424A (en) | Single-crystal ingot growth apparatus and method of controlling the same | |
| CN114046755A (en) | Device and method for obtaining real-time length of silicon rod pulled by Czochralski method and crystal pulling furnace | |
| CN117684263A (en) | Method for observing and controlling silicon crystal growing furnace | |
| CN203187773U (en) | CCD (charge coupled device) real-time monitoring device of zone melting furnace | |
| TW202344722A (en) | Method and device for manufacturing silicon single crystal and method for manufacturing silicon wafer | |
| US20160138184A1 (en) | Melt surface flow field measurement method for artificial crystal growth systems and crystal growth apparatus utilizing the method | |
| CN114108074A (en) | Novel method for detecting diameter of czochralski single crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB02 | Change of applicant information |
Address after: 215000 No.99, Jinjihu Avenue, Suzhou Industrial Park, Suzhou City, nw-20 107, 108, 109, 110 Applicant after: New Meguiar (Suzhou) semiconductor technology Co., Ltd Address before: 215000 No.99, Jinjihu Avenue, Suzhou Industrial Park, Suzhou City, nw-20 107, 108, 109, 110 Applicant before: SUZHOU SICREAT NANOTECH Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| CP02 | Change in the address of a patent holder |
Address after: 215000 room 103, building C, North District, Founder science park, No. 188, Suhong East Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee after: New Meguiar (Suzhou) semiconductor technology Co.,Ltd. Address before: 215000 Suzhou nano city nw-20 107, 108, 109, 110, No. 99, Jinjihu Avenue, Suzhou Industrial Park, Jiangsu Province Patentee before: New Meguiar (Suzhou) semiconductor technology Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder |