KR101758980B1 - Ingot growing apparatus and growing method by it - Google Patents

Ingot growing apparatus and growing method by it Download PDF

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KR101758980B1
KR101758980B1 KR1020150085450A KR20150085450A KR101758980B1 KR 101758980 B1 KR101758980 B1 KR 101758980B1 KR 1020150085450 A KR1020150085450 A KR 1020150085450A KR 20150085450 A KR20150085450 A KR 20150085450A KR 101758980 B1 KR101758980 B1 KR 101758980B1
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South Korea
Prior art keywords
ingot
diameter
silicon melt
reference position
measured
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KR1020150085450A
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Korean (ko)
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KR20160148413A (en
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김윤구
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주식회사 엘지실트론
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Priority to PCT/KR2016/005045 priority patent/WO2016204411A1/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Abstract

The present invention relates to an ingot growing apparatus capable of precisely measuring the diameter and position of an ingot in a silicon melt interface even when shaking of a seed cable occurs, and a growing method thereof.
The ingot growing apparatus and the method for growing the same according to the present invention include an image sensor in a direction different from the ingot measuring sensor so that the diameter of the ingot measured by the diameter measuring sensor is corrected according to the change of the reference position measured by the image sensor, Can be calculated.

Description

[0001] INGOT GROWING APPARATUS AND GROWING METHOD BY IT [0002]

The present invention relates to an ingot growing apparatus capable of precisely measuring the diameter and position of an ingot in a silicon melt interface even when shaking of a seed cable occurs, and a growing method thereof.

Generally, a Czochralski (CZ) method for growing a single crystal silicon into an ingot form is widely used for manufacturing wafers.

In the ingot growth process according to the Czochralski method, an inert gas is flowed into a chamber, a crucible provided in the chamber is heated to form a silicon melt, and a seed, which is a seed crystal suspended at the end of the seed cable, The ingot suspended in the seed cable is grown in the longitudinal direction while maintaining the target diameter while the seed cable is rolled up when the diameter of the ingot grows to the target diameter.

At this time, the diameter of the ingot is measured by a diameter measuring sensor to control the diameter of the ingot, and the pulling speed of the seed cable is controlled according to the measured value.

In addition, it is easy to control the diameter of the ingot and control the position of the ingot in the silicon melt interface at the center of the crucible in the ingot growing step in order to uniformly maintain the quality.

1 is a diagram showing an example in which a diameter measuring sensor applied to a general ingot growing apparatus senses the diameter of an ingot.

1, the diameter measuring sensor 1 senses a maniscus formed between the silicon melt surface and the ingot, and the diameter measurement sensor 1 is connected to the silicon melt surface via a central portion (c) of the diameter measuring sensor 1 from a meniscus It senses the intensity of light.

Of course, the diameter measuring sensor 1 is movable in the horizontal direction.

Accordingly, as the diameter of the diameter measurement sensor 1 moves from the position P1 to the position P3 as the diameter decreases, the center portion c of the diameter measurement sensor 1 moves from the meniscus And the diameter of the ingot can be measured according to the moving distance of the diameter measuring sensor 1. [

However, since the body growth process is carried out in the form of a heavy ingot hanging on the seed cable, the seed cable may be shaken due to various factors. As a result, the diameter of the ingot can not be accurately measured There is a problem that it is difficult to control the diameter of the ingot or to control the position of the ingot to match the center of the crucible.

Japanese Patent Application Laid-Open No. 2004-256340 discloses a pair of vibration preventing means disposed on both sides of a seed cable to prevent shaking of the seed cable. The vibration preventing means mechanically pushes the seed cable in the lateral direction The form of the note is composed.

However, according to the related art, since the seed cable and the anti-vibration means are directly rubbed, the metal foreign matter separated from the seed cable or the anti-vibration means can contaminate the silicon melt and further increase the possibility of breakage of the seed cable during the process .

Further, in the prior art, it is possible to prevent the shaking of the seed cable at that point by moving the anti-vibration means, but it is hard to see that the position of the ingot actually moved by the seed cable at the silicon melt interface.

Therefore, it is difficult to precisely grasp the diameter and position of the ingot in the silicon melt interface by using the distance traveled by the conventional anti-vibration means, thereby controlling the diameter of the ingot or controlling the position of the ingot to the center of the crucible There is a difficult problem.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide an ingot growing apparatus and a method of growing the ingot which can accurately measure the diameter and position of the ingot in the silicon melt interface even when shaking of the seed cable occurs. There is a purpose.

The present invention relates to a crucible containing a silicon melt; A seed cable provided on the crucible and growing an ingot as the seed immersed in the silicon melt is pulled up; A diameter measuring sensor for measuring the brightness of light at a boundary between the silicon melt and the ingot to measure the diameter of the ingot; An image sensor provided in a direction different from the diameter measuring sensor and measuring a predetermined reference position on the upper surface of the silicon melt; And a controller for correcting the diameter of the ingot measured by the diameter measuring sensor according to a change of the reference position measured by the image sensor.

According to another aspect of the present invention, there is provided a method for manufacturing a silicon ingot, comprising: a first step of measuring the brightness of light at a boundary line between a silicon melt and an ingot to measure the diameter of the ingot; A second step of measuring a predetermined reference position on the upper surface of the silicon melt in a direction different from the measurement position in the first step; And a third step of correcting the diameter of the ingot measured in the first step according to the change of the reference position measured in the second step.

The ingot growing apparatus and the method for growing the same according to the present invention include an image sensor in a direction different from the ingot measuring sensor so that the diameter of the ingot measured by the diameter measuring sensor is corrected according to the change of the reference position measured by the image sensor, Can be calculated.

Therefore, even if the shear wave of the seed cable is generated, the diameter and position of the ingot can be accurately calculated at the silicon melt interface.

Furthermore, by controlling the diameter of the ingot precisely to the target diameter, there is an advantage that the deviation of the diameter of the wafer can be reduced.

Further, there is an advantage that the quality of the wafer can be uniformly maintained in the radial direction or the longitudinal direction of the ingot by controlling the position of the ingot at the interface of the silicon melt to match the center of the crucible.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an example in which a diameter measuring sensor applied to a general ingot growing apparatus senses the diameter of an ingot. Fig.
2 is a view showing an example of an ingot growing apparatus according to the present invention.
Fig. 3 is a view showing reference positions photographed in an image sensor applied to the present invention; Fig.
4 is a block diagram showing an example of a diameter control device according to the present invention.
5 is a flowchart showing an example of an ingot growing method according to the present invention.

Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings. It should be understood, however, that the scope of the inventive concept of the present embodiment can be determined from the matters disclosed in the present embodiment, and the spirit of the present invention possessed by the present embodiment is not limited to the embodiments in which addition, Variations.

FIG. 2 is a view showing an example of an ingot growing apparatus according to the present invention, and FIG. 3 is a view showing reference positions photographed in an image sensor applied to the present invention.

The ingot growing apparatus according to the present invention includes a crucible 120, a heater 130, a cooling member 140 and a seed 160 for growing an ingot IG inside the chamber 110 as shown in Figs. 2 and 3, A cable 160 and a pulling rate controller 170. The diameter measuring sensor 210, the image sensor 220 and the controller 230 are disposed outside the chamber 110 to accurately measure the diameter of the ingot IG. .

The chamber 110 provides a predetermined closed space in which the ingot IG is grown and includes an inlet 150 at an upper side for flowing an inert gas such as Ar from the upper side to the lower side, And is mounted inside / outside.

The first and second view ports W1 and W2 are provided on both sides of the chamber 110 to observe the interior of the chamber 110. The diameter measurement sensor 210 and the image sensor 220, Are provided outside the first and second view ports W1 and W2.

The crucible 120 is a container containing a silicon melt and is rotatably installed inside the chamber 110. At this time, the crucible 120 is configured in such a manner that a quartz crucible and a graphite crucible are overlapped so as to prevent inflow of impurities from entering the crucible 120 and also to withstand high temperatures.

The heater 130 is provided around the crucible 120 and liquefies the poly-shaped raw material contained in the crucible 120 with the silicon melt as the crucible 120 is heated.

The cooling member 140 is provided to directly cool the ingot IG to be grown from the silicon melt at a high temperature. The cooling member 140 is installed to hang above the crucible 120 and is grown from the silicon melt contained in the crucible 120 And is installed so as to surround the ingot IG at a predetermined interval.

The seed cable 160 has a plurality of wires formed in a twisted shape and has strength and elasticity to lift a heavy ingot. Of course, the seed cable 160 may be provided with a seed chuck on which a seed as a seed crystal is mounted.

The pulling rate controller 170 is configured to control the pulling speed of the seed cable 160. In the embodiment, the pulling speed controller 170 includes a cylindrical drum on which the seed cable 160 is wound and unwound, a motor for rotating the drum And may be an ADC sensor unit that is interlocked with the control unit 230 to adjust the pulling speed according to the diameter correction value of the ingot, and is not limited thereto.

The diameter measurement sensor 210 is installed outside the first view port W1 so as to move horizontally, and is configured to measure the brightness of light in the meniscus.

Of course, when the diameter of the ingot is actually varied, or when the seed cable 160 is shaken to move the ingot, the diameter measuring sensor 210 senses the diameter measurement value of the ingot as changed.

The image sensor 220 is installed outside the second view port W2 and is configured as a camera capable of photographing a predetermined reference position.

At this time, the image sensor 220 is provided in a direction different from the diameter measurement sensor 210, and limits the image sensors 220 provided in opposite directions in the embodiment.

In the embodiment, the reference position measured by the image sensor 220 is a straight line extending from the image of the circumferential part of the ingot on the upper surface of the silicon melt, as shown in Fig. 3, And can be represented by the center coordinates (X, Y).

Therefore, the image sensor 220 can measure the reference position and detect the change of the position of the ingot by the swinging of the seed cable 160. In the following, the diameter correction value D 1 of the ingot is calculated Can be applied.

The control unit 230 is provided to control the factors affecting the ingot growth process. In the embodiment, the diameter measurement value D 0 of the ingot is corrected according to the change R of the reference position, limited to controlling the pulling rate (P / S) in accordance with the value (D 1), and will be described in detail below.

4 is a block diagram illustrating an example of a diameter control apparatus applied to the ingot growing apparatus according to the present invention.

3, the diameter control apparatus includes a control unit 230 including a diameter measurement sensor 210, an image sensor 220, an input unit 231 and an operation unit 232, And a controller 170, as shown in FIG.

First, the user inputs the reference value (X 0 , Y 0 ) through the input unit 231. At the time when the ingot becomes the target diameter, the user selects the straight line having the predetermined length, which is a part of the circumference of the ingot, It sets the center coordinates of the reference value (X 0, Y 0).

The diameter measuring sensor 210 and the image sensor 220 measure the diameter D 0 of the ingot and the reference position X 1 and Y 1 of the ingot in the opposite directions, respectively.

The operation unit then calculates the movement distance R of the reference position by comparing the reference values X 0 and Y 0 with the measured reference positions X 1 and Y 1 , The diameter correction value D 1 of the ingot can be calculated and a correction factor can be added according to the process condition.

Figure 112015058258064-pat00001

Here, D 0 is the diameter of the ingot measured by the diameter measuring sensor 210, R is the moving distance of the reference position measured by the image sensor 220, and θ is the diameter of the ingot And the angle of the image sensor 220 from the sensor 210.

For example, when the diameter measurement sensor 210 and the image sensor 220 are located in opposite directions, the diameter correction value D 1 becomes a value obtained by subtracting the movement distance from the diameter measurement value D 0 , (R) can be +, 0, -.

When the diameter correction value D 1 of the ingot is calculated in the computing unit 232, the pulling rate controller 170 adjusts the pulling rate P / S in accordance with the diameter correction value D 1 of the ingot. So that the diameter of the ingot can be precisely adjusted to the target diameter.

5 is a flowchart showing an example of an ingot growing method according to the present invention.

The ingot growth method of the present invention proceeds with the ingot body growth process at a set pulling rate (P / S) as shown in FIG. 5, and the operator inputs a reference value (see S1 and S2).

The operator inputs the center coordinates of the straight line as the reference value (X 0 , Y 0 ) on the basis of the arc A having a specific length, which is a part of the circumference of the ingot at the time when the diameter D of the ingot becomes the target diameter D T However, since the position of the arc serving as a reference may be different for each process, it is preferable that the operator confirms each step of the process and inputs the reference value (X 0 , Y 0 ).

Next, the diameter (D 0 ) of the ingot is measured in a predetermined direction, and the reference position (X 1 , Y 1 ) of the ingot is measured in the opposite direction (see S3 and S4)

The diameter (D 0 ) of the ingot and the reference position (X 1 , Y 1 ) of the ingot are measured in different directions with respect to the circumference of the ingot.

In an embodiment, the diameter as the measuring sensor is moved by measuring the specific brightness of the meniscus, by measuring a point on the other hand for measuring the diameter (D 0) of the ingot, the meniscus in the image sensor is fixed, the ingot The reference position (X 1 , Y 1 ) is measured.

Of course, there is also preset relative angular (θ) in the diameter of the measuring sensor and the image sensor, is applied to calculate the diameter of the correction value (D 1) of the ingot below.

Next, the movement distance R is calculated from the reference value (X 0 , Y 0 ) and the reference position (X 1 , Y 1 ) of the ingot.

The movement distance R may be +, 0, -. When the movement distance R is + or -, it can be determined that the position of the ingot has been changed due to the shaking of the seed cable.

Next, the diameter correction value D 1 of the ingot is calculated according to the movement distance R and the measurement position? (See S6)

The diameter correction value D 1 of the ingot can be calculated by the above-described expression (1) and the diameter measurement value D 0 is corrected in consideration of the movement distance R and the measurement position? .

Next, the pulling speed P / S of the ingot is controlled in accordance with the diameter correction value D 1 of the ingot (refer to S7).

Therefore, even if the position of the ingot is varied by fluctuation of the seed cable or other factors, the diameter and position of the ingot in the silicon melt interface can be accurately calculated.

Further, the diameter deviation of the wafer can be reduced by controlling the diameter of the ingot precisely to the target diameter, or the position of the ingot in the silicon melt interface can be controlled to match the center of the crucible, The quality can be kept uniform.

110: chamber 120: crucible
130: heater 140: cooling member
150: Suction port 160: Seed cable
170: Pulling speed controller 210: Diameter measuring sensor
220: image sensor 230:

Claims (10)

Crucible containing silicon melt;
A seed cable provided on the crucible and growing an ingot as the seed immersed in the silicon melt is pulled up;
A diameter measuring sensor for measuring the brightness of light at a boundary between the silicon melt and the ingot to measure the diameter of the ingot;
An image sensor provided in a direction different from the diameter measuring sensor and measuring a predetermined reference position on the upper surface of the silicon melt; And
And a controller for correcting the diameter of the ingot measured by the diameter measuring sensor according to a change of the reference position measured by the image sensor,
Wherein the image sensor comprises:
And determining a center position of a straight line as a reference position based on an arc of a specific length from an image of a part of the circumference of the ingot on the upper surface of the silicon melt. The method according to claim 1,
Wherein the image sensor comprises:
And a camera for capturing an image fixed at a specific position. The method according to claim 1,
Wherein the image sensor comprises:
And an ingot growing device disposed opposite to the diameter measuring sensor. delete The method according to claim 1,
Wherein,
An input unit for inputting a reference value of a center coordinate of a straight line based on an arc of a specific length which is a part of a circumference of the ingot on the upper surface of the silicon melt at the time when the ingot reaches a target diameter;
And an operation unit for calculating a movement distance of the reference position by comparing the reference position measured by the image sensor with the reference value. 6. The method of claim 5,
Wherein,
The diameter D 0 of the ingot measured by the diameter measuring sensor, the moving distance R of the reference position measured by the image sensor, and the angle θ at which the image sensor is positioned from the diameter measuring sensor with respect to the center of the ingot, By using the following equation: " ( 1) "
Figure 112017004389804-pat00002
 A first step of measuring the brightness of light at the boundary line between the silicon melt and the ingot to measure the diameter of the ingot;
A second step of measuring a predetermined reference position on the upper surface of the silicon melt in a direction different from the measurement position in the first step; And
And a third step of correcting the diameter of the ingot measured in the first step according to a change in the reference position measured in the second step,
The second step comprises:
A first step of photographing a part of the circumference of the ingot on the upper surface of the silicon melt as an image;
And a second step of determining a center position of a straight line as a reference position based on a call of a specific length from the image photographed in the first step. delete 8. The method of claim 7,
In the third step,
A first step of receiving a reference value of a center coordinate of a straight line based on an arc of a specific length which is a part of a circumference of the ingot on the upper surface of the silicon melt at the time when the ingot reaches a target diameter;
And a second step of comparing the reference position measured in the second step with the reference value to calculate a movement distance of the reference position. 10. The method of claim 9,
In the third step,
The diameter D 0 of the ingot measured in the first step, the moving distance R of the reference position measured in the second step, the point at which the diameter of the ingot is measured with respect to the center of the ingot, If the angle between θ, the ingot growing method comprising a step of calculating by the equation to the diameter correction value D 1 of the ingot.
Figure 112017004389804-pat00003
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CN113026090B (en) * 2021-02-08 2022-03-08 杭州富加镓业科技有限公司 Detection method of seed crystal rod jitter detection device and crystal growth method
CN113049082B (en) * 2021-02-08 2022-03-08 杭州富加镓业科技有限公司 Detection method of seed crystal rod jitter detection device and crystal growth method
CN113638041B (en) * 2021-08-18 2022-08-02 西安奕斯伟材料科技有限公司 Method, device and equipment for controlling crystal growth diameter and computer storage medium

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