CN115573028B - Crystal furnace deviation correction method and device, computer equipment and storage medium - Google Patents
Crystal furnace deviation correction method and device, computer equipment and storage medium Download PDFInfo
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- CN115573028B CN115573028B CN202211442470.4A CN202211442470A CN115573028B CN 115573028 B CN115573028 B CN 115573028B CN 202211442470 A CN202211442470 A CN 202211442470A CN 115573028 B CN115573028 B CN 115573028B
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The application relates to a method and a device for correcting deviation of a crystal furnace, computer equipment and a storage medium. The method comprises the following steps: acquiring actual crystal bar parameters output in the current time period, and taking the crystal bar parameters output in the previous time period as standard crystal bar parameters of the current time period; determining liquid level deviation corresponding to difference between actual crystal bar parameters and standard crystal bar parameters based on the corresponding relation between liquid level variation of the crystal furnace in unit time and the crystal bar parameters; and correcting the crystal growth control of the crystal furnace according to the liquid level deviation. By adopting the method, the crystal furnace deviation can be accurately measured, the control of crystal growth is corrected based on the crystal furnace deviation, the accurate control of the temperature gradient of crystal growth is realized, and the quality of crystal growth is ensured.
Description
Technical Field
The application relates to the technical field of crystal growing furnaces, in particular to a method and a device for correcting deviation of a crystal growing furnace, computer equipment and a storage medium.
Background
In the growth process of a crystal bar such as monocrystalline silicon and the like, the crystal quality is easily influenced by the temperature gradient of crystal growth, wherein in the Czochralski crystal pulling process, silicon materials in a furnace are gradually reduced along with the growth of the crystal, the liquid level of the materials is gradually reduced, the liquid opening distance is changed, if the position of the liquid level of the silicon is not controlled, the temperature gradient of the crystal growth is influenced, the quality of the crystal is reduced, and meanwhile, the temperature gradient of the crystal growth is also directly influenced by the temperature of the materials in a crucible.
The current commonly used method for measuring the liquid gap distance comprises a weighing method, wherein the weighing method obtains the current weight of a crystal through a weighing sensor, then converts the current weight of the crystal into the weight of a melt in a boiler and calculates the current liquid level, however, in the actual production process, a crucible is deformed along with the increase of the service time, the measurement precision of the liquid gap distance is influenced, the temperature gradient control of the crystal growth is influenced, and meanwhile, the deformation of the crucible also influences the temperature control of materials in the crucible, and the temperature gradient control of the crystal growth is influenced.
Therefore, a technical solution capable of accurately measuring and correcting the deviation of the crystal furnace is needed.
Disclosure of Invention
In view of the above, it is necessary to provide a crystal furnace variation correction method, device, computer device and storage medium capable of accurately measuring and correcting crystal furnace variation.
In a first aspect, the present application provides a method for correcting deviation of a crystal furnace, the method comprising:
acquiring actual crystal bar parameters output in the current time period, and taking the crystal bar parameters output in the previous time period as standard crystal bar parameters of the current time period;
determining liquid level deviation corresponding to difference between actual crystal bar parameters and standard crystal bar parameters based on the corresponding relation between liquid level variation of the crystal furnace in unit time and the crystal bar parameters;
and correcting the crystal growth control of the crystal furnace according to the liquid level deviation.
In one embodiment, acquiring the actual ingot parameters output in the current time period comprises:
the temperature value of the crystal bar in the current time period is obtained by measuring the temperature of the crystal bar, and the variation speed of the temperature value is used as an actual crystal bar parameter.
In one embodiment, acquiring the actual ingot parameters output in the current time period comprises:
and projecting the crystal bar in the current time period to obtain bubble parameters of the crystal bar as actual crystal bar parameters, wherein the bubble parameters at least comprise one or more of the number of bubbles, the size of the bubbles and the space between the bubbles.
In one embodiment, determining the liquid level deviation corresponding to the difference between the actual crystal bar parameter and the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter comprises:
determining the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter;
and determining the liquid level deviation based on the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter.
In one embodiment, correcting crystal growth control of the crystal furnace based on the level deviation comprises:
and correcting the crystal growth temperature control of the crystal furnace according to the liquid level deviation.
In one embodiment, correcting crystal growth control of the crystal furnace based on the level deviation comprises:
according to the liquid level deviation, correcting the liquid port distance measured based on the weighing method;
and controlling the distance between the liquid ports of the crystal furnace based on the corrected distance between the liquid ports.
In a second aspect, the present application further provides a deviation correction device for a crystal furnace, the device comprising:
the acquisition module is used for acquiring actual crystal bar parameters output in the current time period and taking the crystal bar parameters output in the previous time period as standard crystal bar parameters in the current time period;
the measuring module is used for determining liquid level deviation corresponding to difference between actual crystal bar parameters and standard crystal bar parameters based on the corresponding relation between liquid level variation of the crystal furnace in unit time and the crystal bar parameters;
and the correction module is used for correcting the crystal growth control of the crystal furnace according to the liquid level deviation.
In one embodiment, the correction module comprises: the temperature correction module and/or the liquid gap correction module;
the temperature correction module is used for correcting the crystal growth temperature control of the crystal furnace according to the liquid level deviation;
and the liquid port distance correction module is used for correcting the liquid port distance measured based on the weighing method according to the liquid level deviation and controlling the liquid port distance of the crystal furnace based on the corrected liquid port distance.
In a third aspect, the present application further provides a computer device, which includes a memory and a processor, where the memory stores a computer program, and the processor implements the steps of the crystal furnace deviation correction method according to any one of the above embodiments when executing the computer program.
In a fourth aspect, the present application further provides a computer-readable storage medium, on which a computer program is stored, and the computer program, when executed by a processor, implements the steps of the crystal furnace deviation correction method according to any one of the above embodiments.
The method, the device, the computer equipment and the storage medium for correcting the deviation of the crystal furnace reflect the deviation of the liquid level of the crystal furnace through the crystal rod parameters based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal rod parameters, wherein the variation of the material liquid level in unit time is directly related to the crystal rod growth and can be reflected on the produced crystal rod parameters, conversely, the liquid level variation can be reflected through the crystal rod parameters such as crystal rod temperature, crystal rod bubbles and the like, in other words, the liquid level variation can be reflected by twice crystal pulling with the same crystal rod parameters, and based on the liquid level variation, the liquid level variation can be measured through the crystal rod parameters, so that the liquid level deviation can be accurately obtained, further, the temperature control of the crystal furnace can be corrected based on the liquid level deviation, the liquid gap distance obtained by a weighing method can be corrected, the crystal growth can be accurately controlled, and the quality of the crystal growth can be ensured.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic flow chart of a method for correcting crystal furnace variation in one embodiment;
FIG. 2 is a block diagram of a deviation correcting device of a crystal growing furnace in one embodiment;
FIG. 3 is a diagram of the internal structure of a computer device in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or be connected to the other element through intervening elements. Further, "connection" in the following embodiments is understood to mean "electrical connection", "communication connection", or the like, if there is a transfer of electrical signals or data between the connected objects.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, as used in this specification, the term "and/or" includes any and all combinations of the associated listed items.
The crystal furnace deviation correction method provided by the embodiment of the application can be applied to crystal furnace deviation correction in monocrystalline silicon preparation, is wider, and can also be applied to crystal furnace deviation correction in other crystal preparations. For a general crystal bar growth process, the processes of seeding, shouldering, shoulder rotating, diameter equalizing, ending and the like are required, wherein the seeding is to slowly insert crystal seeds into the crystal seeds, then slowly lift the crystal seeds upwards to reduce the diameter of the crystal seeds to a certain size, maintain the diameter and elongate the crystal seeds to eliminate the crystal grain arrangement orientation difference in the crystal seeds, the shouldering and shoulder rotating are used to slowly reduce the lifting speed and the temperature to gradually increase the diameter of a neck to a required size, the diameter equalizing is used to continuously adjust the lifting speed and the melting temperature for crystal growth, maintain the fixed diameter of the crystal bar until the length of the crystal bar reaches a preset value, and the ending is used to gradually accelerate the lifting speed and increase the melting temperature after the length of the crystal bar reaches the preset value to gradually reduce the diameter of the crystal bar so as to avoid row difference, slippage and the like caused by thermal stress, and the like, and finally, the crystal bar is completely separated from a liquid level, so that a complete crystal bar is obtained.
In one embodiment, as shown in fig. 1, there is provided a method for correcting deviation of a crystal furnace, comprising the steps of:
s100: acquiring actual crystal bar parameters output in the current time period, and taking the crystal bar parameters output in the previous time period as standard crystal bar parameters of the current time period;
specifically, the variation of the material level in the crucible in unit time during the crystal bar growing process can be reflected on the produced crystal bar parameters, in other words, the crystal bar parameters produced in the two times before and after are compared, and if the variation is the same, the variation of the material level in each time period during the two times of crystal pulling process should be the same. Based on this, the present embodiment obtains the actual crystal bar parameter output in the current time period to represent the current material liquid level condition, and uses the crystal bar parameter output in the previous time period as the standard crystal bar parameter in the current time period to represent the current theoretical material liquid level condition without deviation, wherein if there is a crystal furnace deviation, the actual crystal bar parameter and the standard crystal bar parameter will have a difference, and there is a difference caused by the crystal furnace deviation reflected on the liquid level variation.
S200: determining liquid level deviation corresponding to difference between actual crystal bar parameters and standard crystal bar parameters based on the corresponding relation between liquid level variation of the crystal furnace in unit time and the crystal bar parameters;
specifically, the corresponding relation between the liquid level variation and the crystal bar parameter of the crystal furnace in unit time is obtained through early measurement, wherein furnace shutdown measurement is carried out at a plurality of set time nodes to obtain the liquid level variation and the corresponding crystal bar parameter in unit time, and each node can be repeated for a plurality of times, so that the relational expression of the corresponding relation is constructed. Further, the liquid level variation may be measured by a conventional liquid level measuring method, such as a reflection method, a laser triangulation method, a binocular method, a weighing method, etc., and the measurement of the parameters of the ingot may be performed by a corresponding measuring method according to specific parameters, which is specifically described below. The actual operation parameters of different crystal furnaces are different from the states of all parts, so that the liquid level changes of different crystal furnaces in the same time period are possibly different, and the corresponding relation between the liquid level change amount of the crystal furnaces in unit time and the crystal bar parameters needs to be respectively measured in advance aiming at different crystal furnaces.
Specifically, based on the corresponding relationship between the liquid level variation of the crystal furnace in unit time and the crystal bar parameters, the difference between the actual crystal bar parameters and the standard crystal bar parameters is converted into the liquid level deviation between the liquid level variations, wherein as described above, the actual crystal bar parameters represent the current material liquid level condition, the standard crystal bar parameters represent the current theoretical material liquid level condition under the condition of no crystal furnace deviation, and the difference caused by the crystal furnace deviation can be reflected through the difference between the actual crystal bar parameters and the standard crystal bar parameters, so that the liquid level deviation is obtained by converting into the liquid level variation based on the corresponding relationship.
S300: and correcting the crystal growth control of the crystal furnace according to the liquid level deviation.
Specifically, the liquid level deviation can reflect the deformation amount of a crucible of the crystal furnace, wherein the liquid port distance is the distance between the lower edge port of a guide cylinder in the crystal furnace and the liquid level of a material in the crucible of the crystal furnace, the liquid port distance can significantly influence the temperature gradient of crystal growth, meanwhile, the temperature of the material in the crucible can directly influence the temperature gradient of crystal growth, for this reason, the deformation of the crucible can influence the measurement of the liquid port distance and the control of the material temperature, and if the correction of relevant control is not carried out, the control of the temperature gradient of crystal growth is influenced. The embodiment reflects the crucible deformation amount of the crystal furnace based on the liquid level deviation, and realizes indirect measurement of the crucible deformation amount, thereby correcting the temperature control of materials in the crucible and correcting the measurement of the liquid gap distance.
In the crystal furnace deviation correction method, based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameters, the liquid level deviation of the crystal furnace is reflected through the crystal bar parameters, wherein the variation of the material liquid level in unit time is directly related to the crystal bar growth and can be reflected on the produced crystal bar parameters, and conversely, the liquid level variation can be reflected through the crystal bar parameters such as the crystal bar temperature and the crystal bar air bubbles, in other words, two times of crystal pulling with the same crystal bar parameters can reflect that the corresponding liquid level variations are the same.
In one embodiment, acquiring the actual ingot parameters output in the current time period comprises: the temperature value of the crystal bar in the current time period is obtained by measuring the temperature of the crystal bar, and the variation speed of the temperature value is used as an actual crystal bar parameter.
Specifically, the temperature value of each segment of the ingot can be used as the parameter of the ingot in this embodiment, and the characteristic of each segment of the ingot is reflected based on the variation speed of the temperature value in unit time, where the variation speed can be a temperature loss speed, and the temperature loss speeds of the ingots produced in the same time period are the same, which indicates that the variation amounts of the liquid level in each time period are the same in the two crystal pulling processes before and after.
Specifically, the temperature value of each section of the crystal bar can be obtained by image shooting and gray scale processing through a CCD camera on the crystal furnace, and can also be obtained by measurement based on an infrared temperature measurement sensor on the crystal furnace.
In one embodiment, acquiring the actual ingot parameters output in the current time period comprises: and projecting the crystal bar in the current time period to obtain bubble parameters of the crystal bar as actual crystal bar parameters, wherein the bubble parameters at least comprise one or more of the number of bubbles, the size of the bubbles and the space between the bubbles.
Specifically, the parameters of the ingot of this embodiment may be bubble parameters of the ingot, and the characteristics of the ingot are reflected based on the bubble parameters, where the bubble parameters may be one or more of the number of bubbles, the size of bubbles, and the distance between bubbles, and if the bubble parameters of the ingot produced in the same time period are the same, it indicates that the variation of the liquid level in each time period is the same in the two previous and subsequent crystal pulling processes.
Specifically, the bubble parameters of the crystal bar may be identified by illuminating the crystal bar with light and projecting the light onto a curtain, based on the projected image.
In this embodiment, for example, the ingot parameters such as the temperature loss rate and the bubble parameters are adopted, and compared with the measurement of the overall dimension of the ingot, the measurement is more convenient and easier.
In one embodiment, determining a liquid level deviation corresponding to a difference between an actual ingot parameter and a standard ingot parameter based on a correspondence between a liquid level variation of a crystal furnace per unit time and the ingot parameter comprises: determining the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter; and determining the liquid level deviation based on the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter.
Specifically, based on the correspondence between the liquid level variation of the crystal furnace in unit time and the crystal rod parameters, the liquid level variation corresponding to the actual crystal rod parameters output in the current time period and the liquid level variation corresponding to the standard crystal rod parameters can be known, if no crystal furnace deviation exists, the liquid level variations of the two crystal rods should be the same, if crystal furnace deviation exists actually, the liquid level variations of the two crystal rods have a difference, and the difference of the liquid level variations is the difference of the liquid level in the actual current time period, so that the liquid level deviation reflecting the crystal furnace deviation can be obtained based on the correspondence.
In one embodiment, correcting crystal growth control of the crystal furnace based on the level deviation comprises: and correcting the crystal growth temperature control of the crystal furnace according to the liquid level deviation.
Specifically, the temperature control correction of the crystal furnace is carried out by reflecting the crucible deformation through the liquid level deviation, wherein the temperature gradient control of the crystal growth is influenced due to the fact that the crucible deformation directly influences the crucible temperature control, and therefore the temperature control of the crystal furnace can be corrected based on the crucible deformation, and the accurate temperature gradient control of the crystal growth is achieved. The parameters of the heating coil are generally set according to the size of the crucible in crucible temperature control, so that the size value of the crucible can be corrected based on the deformation of the crucible, the parameters of the heating coil are corrected, more accurate temperature gradient control of crystal growth is realized, and the quality of crystal growth is guaranteed.
In one embodiment, correcting crystal growth control of the crystal furnace based on the level deviation comprises: according to the liquid level deviation, correcting the liquid port distance measured based on the weighing method; and controlling the distance between the liquid ports of the crystal furnace based on the corrected distance between the liquid ports.
Specifically, the liquid level deviation reflects the deformation of the crucible to correct the liquid gap, wherein in the liquid gap measurement by the weighing method, the current crystal weight is obtained, then the current crystal weight is converted into the weight of the melt in the boiler, and the current liquid level is calculated, so that when the crucible deforms along with the increase of the service time, the liquid gap obtained by the weighing method has deviation, and therefore the liquid gap obtained by the weighing method can be corrected based on the deformation of the crucible, so that the accurate temperature gradient control of crystal growth is realized, wherein in the weighing method, the deformation of the crucible is added when the obtained current crystal weight is converted into the weight of the melt in the boiler, so that the liquid gap after the current correction is calculated.
In the embodiment, the deformation of the crucible is accurately measured through the liquid level deviation, so that the temperature control of the crystal furnace can be corrected, the liquid opening distance obtained by a weighing method can be corrected, the accuracy of the temperature gradient control of crystal growth can be improved, and the quality of the crystal growth can be ensured.
The present embodiment will be described in detail with reference to a specific application scenario, but is not limited thereto.
In the preparation of monocrystalline silicon, a single crystal furnace is adopted for crystal growth, and aiming at the application scene, the method is adopted to obtain the deformation quantity of the crucible, and the control of the crystal growth is corrected based on the deformation quantity of the crucible, specifically:
the method comprises the steps of measuring and obtaining the corresponding relation between the liquid level variation of a single crystal furnace in unit time and crystal bar parameters in advance to form a relational expression, wherein the crystal bar parameters adopt the temperature loss speed corresponding to each section of temperature value of a crystal bar;
in the preparation process of monocrystalline silicon, acquiring actual crystal bar parameters output in the current time period through an infrared temperature measuring sensor, and taking the crystal bar parameters in the previous time period as standard crystal bar parameters in the current time period;
based on the relational expression, converting the actual crystal bar parameters into corresponding liquid level variable quantities, converting the standard crystal bar parameters into corresponding liquid level variable quantities, and comparing the liquid level variable quantities to obtain liquid level deviation reflecting the deformation quantity of the crucible;
and correcting the control of crystal growth by taking the liquid level deviation as a reference value of the deformation amount of the crucible, wherein the temperature control of the single crystal furnace is corrected according to the liquid level deviation so as to accurately control the current temperature gradient, and the liquid gap distance measured based on the weighing method is corrected according to the liquid level deviation so as to accurately adjust the liquid gap distance based on the corrected liquid gap distance so as to accurately control the current temperature gradient.
It should be understood that, although the steps in the flowcharts related to the embodiments are shown in sequence as indicated by the arrows, the steps are not necessarily executed in sequence as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a part of the steps in the flowcharts related to the above embodiments may include multiple steps or multiple time periods, which are not necessarily performed at the same time, but may be performed at different times, and the order of performing the steps or the time periods is not necessarily sequential, but may be performed alternately or alternately with other steps or at least a part of the steps or the time periods in other steps.
Based on the same inventive concept, the embodiment of the application also provides a crystal furnace deviation correction device for realizing the crystal furnace deviation correction method. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the method, so that specific limitations in one or more embodiments of the crystal furnace deviation correction device provided below can be referred to the limitations of the crystal furnace deviation correction method in the above, and details are not repeated herein.
In one embodiment, as shown in fig. 2, there is provided a deviation correcting apparatus for a crystal growing furnace, including:
the acquisition module 10 is configured to acquire actual crystal bar parameters output in a current time period, and use the crystal bar parameters output in a previous time period as standard crystal bar parameters in the current time period;
the measuring module 20 is used for determining the liquid level deviation corresponding to the difference between the actual crystal bar parameter and the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter;
and the correction module 30 is used for correcting the crystal growth control of the crystal furnace according to the liquid level deviation.
In one embodiment, as shown in FIG. 2, the correction module 30 includes: a temperature correction module 31 and/or a liquid gap correction module 32;
the temperature correction module 31 is used for correcting the crystal growth temperature control of the crystal furnace according to the liquid level deviation;
the liquid gap correction module 32 is used for correcting the liquid gap measured based on the weighing method according to the liquid level deviation, and controlling the liquid gap of the crystal furnace based on the corrected liquid gap.
In one embodiment, acquiring the actual ingot parameters output in the current time period comprises:
the temperature value of the crystal bar in the current time period is obtained by measuring the temperature of the crystal bar, and the variation speed of the temperature value is used as the actual crystal bar parameter.
In one embodiment, acquiring the actual ingot parameters output in the current time period comprises:
and projecting the crystal bar in the current time period to obtain bubble parameters of the crystal bar as actual crystal bar parameters, wherein the bubble parameters at least comprise one or more of the number of bubbles, the size of the bubbles and the space between the bubbles.
In one embodiment, determining a liquid level deviation corresponding to a difference between an actual ingot parameter and a standard ingot parameter based on a correspondence between a liquid level variation of a crystal furnace per unit time and the ingot parameter comprises:
determining the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter;
and determining the liquid level deviation based on the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter.
All or part of each module in the crystal furnace deviation correcting device can be realized by software, hardware and a combination thereof. The modules can be embedded in a hardware form or independent from a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules.
The crystal furnace deviation correcting device reflects the liquid level deviation of the crystal furnace through the crystal rod parameters based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal rod parameters, wherein the variation of the material liquid level in unit time is directly related to the crystal rod growth and can be reflected on the produced crystal rod parameters, and conversely, the liquid level variation can be reflected through the crystal rod parameters such as crystal rod temperature, crystal rod bubbles and the like.
In one embodiment, a computer device is provided, which may be a control device of a crystal furnace, and the internal structure diagram of the computer device may be as shown in fig. 3. The computer device includes a processor, a memory, a communication interface, a display screen, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device comprises a nonvolatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless communication can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a single crystal furnace offset correction method.
Those skilled in the art will appreciate that the architecture shown in fig. 3 is merely a block diagram of some of the structures associated with the disclosed aspects and is not intended to limit the computing devices to which the disclosed aspects apply, as particular computing devices may include more or less components than those shown, or may combine certain components, or have a different arrangement of components.
In one embodiment, a computer device is provided, which comprises a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to realize the deviation correction method of the crystal furnace in any one of the above embodiments. The detailed description refers to the corresponding description of the method, and is not repeated herein.
In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored, which, when being executed by a processor, implements any one of the above-mentioned embodiments of the method for correcting a crystal furnace offset. The detailed description refers to the corresponding description of the method, and is not repeated herein.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, database, or other medium used in the embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include a Read-Only Memory (ROM), a magnetic tape, a floppy disk, a flash Memory, an optical Memory, a high-density embedded nonvolatile Memory, a resistive Random Access Memory (ReRAM), a Magnetic Random Access Memory (MRAM), a Ferroelectric Random Access Memory (FRAM), a Phase Change Memory (PCM), a graphene Memory, and the like. Volatile Memory can include Random Access Memory (RAM), external cache Memory, and the like. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM), among others. The databases referred to in various embodiments provided herein may include at least one of relational and non-relational databases. The non-relational database may include, but is not limited to, a block chain based distributed database, and the like. The processors referred to in the embodiments provided herein may be general purpose processors, central processing units, graphics processors, digital signal processors, programmable logic devices, quantum computing based data processing logic devices, etc., without limitation.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above examples only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.
Claims (4)
1. A method for correcting deviation of a crystal furnace, the method comprising:
acquiring actual crystal bar parameters output in the current time period, and taking the crystal bar parameters output in the previous time period as standard crystal bar parameters of the current time period;
determining liquid level deviation corresponding to the difference between the actual crystal bar parameter and the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter;
correcting the crystal growth control of the crystal furnace according to the liquid level deviation;
acquiring bubble parameters of the crystal bar as the actual crystal bar parameters by projecting the crystal bar in the current time period, wherein the bubble parameters at least comprise one or more of the number of bubbles, the size of the bubbles and the distance between the bubbles;
and determining the liquid level deviation corresponding to the difference between the actual crystal bar parameter and the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter as follows: determining the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter; determining the liquid level deviation based on the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter;
the correcting the crystal growth control of the crystal furnace according to the liquid level deviation comprises the following steps: and correcting the crystal growth temperature control of the crystal furnace according to the liquid level deviation or correcting the liquid opening distance measured based on a weighing method according to the liquid level deviation, and controlling the liquid opening distance of the crystal furnace based on the corrected liquid opening distance.
2. A crystal furnace variation correction apparatus, characterized in that the apparatus comprises:
the acquisition module is used for acquiring actual crystal bar parameters output in the current time period and taking the crystal bar parameters output in the previous time period as standard crystal bar parameters in the current time period;
the measuring module is used for determining liquid level deviation corresponding to difference between the actual crystal bar parameter and the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter;
the correction module is used for correcting the crystal growth control of the crystal furnace according to the liquid level deviation;
the correction module includes: the temperature correction module is used for correcting the crystal growth temperature control of the crystal furnace according to the liquid level deviation, the liquid gap correction module is used for correcting the liquid gap measured based on the weighing method according to the liquid level deviation, and the liquid gap control of the crystal furnace is carried out based on the corrected liquid gap;
the acquiring of the actual crystal bar parameters output in the current time period comprises: acquiring bubble parameters of the crystal bar as the actual crystal bar parameters by projecting the crystal bar in the current time period, wherein the bubble parameters at least comprise one or more of the number of bubbles, the size of the bubbles and the distance between the bubbles;
and determining the liquid level deviation corresponding to the difference between the actual crystal bar parameter and the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter as follows: determining the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter based on the corresponding relation between the liquid level variation of the crystal furnace in unit time and the crystal bar parameter; and determining the liquid level deviation based on the liquid level variation corresponding to the actual crystal bar parameter and the liquid level variation corresponding to the standard crystal bar parameter.
3. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor realizes the steps of the method of claim 1 when executing the computer program.
4. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the method as claimed in claim 1.
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| JP2004035353A (en) * | 2002-07-05 | 2004-02-05 | Sumitomo Mitsubishi Silicon Corp | Process for preparing silicon single crystal |
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