TW202300705A - 鉑電解質 - Google Patents
鉑電解質 Download PDFInfo
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- TW202300705A TW202300705A TW111101842A TW111101842A TW202300705A TW 202300705 A TW202300705 A TW 202300705A TW 111101842 A TW111101842 A TW 111101842A TW 111101842 A TW111101842 A TW 111101842A TW 202300705 A TW202300705 A TW 202300705A
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- Prior art keywords
- electrolyte
- platinum
- acid
- iii
- deposition
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 239000003792 electrolyte Substances 0.000 title claims abstract description 88
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 41
- 230000008021 deposition Effects 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 28
- 229910052711 selenium Inorganic materials 0.000 claims description 14
- 229910052797 bismuth Inorganic materials 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 4
- ADTMLLXVZWYCDG-UHFFFAOYSA-L platinum(2+);disulfamate Chemical compound [Pt+2].NS([O-])(=O)=O.NS([O-])(=O)=O ADTMLLXVZWYCDG-UHFFFAOYSA-L 0.000 claims description 2
- 239000000654 additive Substances 0.000 abstract description 9
- -1 alkali metal salts Chemical class 0.000 description 17
- 239000011669 selenium Substances 0.000 description 12
- 239000002253 acid Substances 0.000 description 11
- 230000002378 acidificating effect Effects 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000000080 wetting agent Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052708 sodium Inorganic materials 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- RPACBEVZENYWOL-XFULWGLBSA-M sodium;(2r)-2-[6-(4-chlorophenoxy)hexyl]oxirane-2-carboxylate Chemical compound [Na+].C=1C=C(Cl)C=CC=1OCCCCCC[C@]1(C(=O)[O-])CO1 RPACBEVZENYWOL-XFULWGLBSA-M 0.000 description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000003498 tellurium compounds Chemical class 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 4
- XTEGVFVZDVNBPF-UHFFFAOYSA-N naphthalene-1,5-disulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1S(O)(=O)=O XTEGVFVZDVNBPF-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- XUGISPSHIFXEHZ-GPJXBBLFSA-N [(3r,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-2,3,4,7,8,9,11,12,14,15,16,17-dodecahydro-1h-cyclopenta[a]phenanthren-3-yl] acetate Chemical compound C1C=C2C[C@H](OC(C)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 XUGISPSHIFXEHZ-GPJXBBLFSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005363 electrowinning Methods 0.000 description 3
- VNVQLDDPGAWSSB-UHFFFAOYSA-H iridium(3+);trisulfate Chemical compound [Ir+3].[Ir+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O VNVQLDDPGAWSSB-UHFFFAOYSA-H 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- MHGOKSLTIUHUBF-UHFFFAOYSA-N 2-ethylhexyl sulfate Chemical compound CCCCC(CC)COS(O)(=O)=O MHGOKSLTIUHUBF-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical class CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 108010077895 Sarcosine Proteins 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 2
- 150000001463 antimony compounds Chemical class 0.000 description 2
- GUNJVIDCYZYFGV-UHFFFAOYSA-K antimony trifluoride Chemical compound F[Sb](F)F GUNJVIDCYZYFGV-UHFFFAOYSA-K 0.000 description 2
- PPNKDDZCLDMRHS-UHFFFAOYSA-N bismuth(III) nitrate Inorganic materials [Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PPNKDDZCLDMRHS-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002504 iridium compounds Chemical class 0.000 description 2
- HTFVQFACYFEXPR-UHFFFAOYSA-K iridium(3+);tribromide Chemical compound Br[Ir](Br)Br HTFVQFACYFEXPR-UHFFFAOYSA-K 0.000 description 2
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MSBGPEACXKBQSX-UHFFFAOYSA-N (4-fluorophenyl) carbonochloridate Chemical compound FC1=CC=C(OC(Cl)=O)C=C1 MSBGPEACXKBQSX-UHFFFAOYSA-N 0.000 description 1
- GEHMBYLTCISYNY-UHFFFAOYSA-N Ammonium sulfamate Chemical compound [NH4+].NS([O-])(=O)=O GEHMBYLTCISYNY-UHFFFAOYSA-N 0.000 description 1
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- 102000008186 Collagen Human genes 0.000 description 1
- 108010035532 Collagen Proteins 0.000 description 1
- 229910016347 CuSn Inorganic materials 0.000 description 1
- 229910002535 CuZn Inorganic materials 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910021638 Iridium(III) chloride Inorganic materials 0.000 description 1
- 229930195725 Mannitol Natural products 0.000 description 1
- BACYUWVYYTXETD-UHFFFAOYSA-N N-Lauroylsarcosine Chemical compound CCCCCCCCCCCC(=O)N(C)CC(O)=O BACYUWVYYTXETD-UHFFFAOYSA-N 0.000 description 1
- 229910005569 NiB Inorganic materials 0.000 description 1
- 229910003266 NiCo Inorganic materials 0.000 description 1
- 229910003294 NiMo Inorganic materials 0.000 description 1
- QDYWDMCTLACQCS-UHFFFAOYSA-N OS(O)(=O)=O.CCCCCC([Na])CC Chemical compound OS(O)(=O)=O.CCCCCC([Na])CC QDYWDMCTLACQCS-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 229910019017 PtRh Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- TXTQARDVRPFFHL-UHFFFAOYSA-N [Sb].[H][H] Chemical compound [Sb].[H][H] TXTQARDVRPFFHL-UHFFFAOYSA-N 0.000 description 1
- HJPBEXZMTWFZHY-UHFFFAOYSA-N [Ti].[Ru].[Ir] Chemical compound [Ti].[Ru].[Ir] HJPBEXZMTWFZHY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008055 alkyl aryl sulfonates Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
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- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 1
- SZXAQBAUDGBVLT-UHFFFAOYSA-H antimony(3+);2,3-dihydroxybutanedioate Chemical compound [Sb+3].[Sb+3].[O-]C(=O)C(O)C(O)C([O-])=O.[O-]C(=O)C(O)C(O)C([O-])=O.[O-]C(=O)C(O)C(O)C([O-])=O SZXAQBAUDGBVLT-UHFFFAOYSA-H 0.000 description 1
- 125000005228 aryl sulfonate group Chemical group 0.000 description 1
- FAOUENTVTAXLPG-UHFFFAOYSA-L azane;platinum(2+);dinitrite Chemical compound N.N.[Pt+2].[O-]N=O.[O-]N=O FAOUENTVTAXLPG-UHFFFAOYSA-L 0.000 description 1
- 229950011260 betanaphthol Drugs 0.000 description 1
- SULICOHAQXOMED-UHFFFAOYSA-H bis(5,6-dihydroxy-4,7-dioxo-1,3,2-dioxabismepan-2-yl) 2,3-dihydroxybutanedioate Chemical compound [Bi+3].[Bi+3].[O-]C(=O)C(O)C(O)C([O-])=O.[O-]C(=O)C(O)C(O)C([O-])=O.[O-]C(=O)C(O)C(O)C([O-])=O SULICOHAQXOMED-UHFFFAOYSA-H 0.000 description 1
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 description 1
- ANERHPOLUMFRDC-UHFFFAOYSA-K bismuth citrate Chemical compound [Bi+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O ANERHPOLUMFRDC-UHFFFAOYSA-K 0.000 description 1
- TXKAQZRUJUNDHI-UHFFFAOYSA-K bismuth tribromide Chemical compound Br[Bi](Br)Br TXKAQZRUJUNDHI-UHFFFAOYSA-K 0.000 description 1
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 1
- QSBNOZODKXUXSP-UHFFFAOYSA-K bismuth;azane;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound N.[Bi+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QSBNOZODKXUXSP-UHFFFAOYSA-K 0.000 description 1
- MNMKEULGSNUTIA-UHFFFAOYSA-K bismuth;methanesulfonate Chemical compound [Bi+3].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O MNMKEULGSNUTIA-UHFFFAOYSA-K 0.000 description 1
- BRCWHGIUHLWZBK-UHFFFAOYSA-K bismuth;trifluoride Chemical compound F[Bi](F)F BRCWHGIUHLWZBK-UHFFFAOYSA-K 0.000 description 1
- IAQAJTTVJUUIQJ-UHFFFAOYSA-N bismuth;trihydrate Chemical compound O.O.O.[Bi] IAQAJTTVJUUIQJ-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
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- 229920001436 collagen Polymers 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- SMVRDGHCVNAOIN-UHFFFAOYSA-L disodium;1-dodecoxydodecane;sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O.CCCCCCCCCCCCOCCCCCCCCCCCC SMVRDGHCVNAOIN-UHFFFAOYSA-L 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
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- CJTCBBYSPFAVFL-UHFFFAOYSA-N iridium ruthenium Chemical compound [Ru].[Ir] CJTCBBYSPFAVFL-UHFFFAOYSA-N 0.000 description 1
- ULFQGKXWKFZMLH-UHFFFAOYSA-N iridium tantalum Chemical compound [Ta].[Ir] ULFQGKXWKFZMLH-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
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- JZMJDSHXVKJFKW-UHFFFAOYSA-N methyl sulfate Chemical compound COS(O)(=O)=O JZMJDSHXVKJFKW-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Chemical class 0.000 description 1
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- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- 235000021317 phosphate Nutrition 0.000 description 1
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- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 1
- NDBYXKQCPYUOMI-UHFFFAOYSA-N platinum(4+) Chemical class [Pt+4] NDBYXKQCPYUOMI-UHFFFAOYSA-N 0.000 description 1
- BYFKUSIUMUEWCM-UHFFFAOYSA-N platinum;hexahydrate Chemical compound O.O.O.O.O.O.[Pt] BYFKUSIUMUEWCM-UHFFFAOYSA-N 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- BFPJYWDBBLZXOM-UHFFFAOYSA-L potassium tellurite Chemical compound [K+].[K+].[O-][Te]([O-])=O BFPJYWDBBLZXOM-UHFFFAOYSA-L 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 108700004121 sarkosyl Proteins 0.000 description 1
- QYHFIVBSNOWOCQ-UHFFFAOYSA-N selenic acid Chemical compound O[Se](O)(=O)=O QYHFIVBSNOWOCQ-UHFFFAOYSA-N 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
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- CRDYSYOERSZTHZ-UHFFFAOYSA-N selenocyanic acid Chemical class [SeH]C#N CRDYSYOERSZTHZ-UHFFFAOYSA-N 0.000 description 1
- MCAHWIHFGHIESP-UHFFFAOYSA-N selenous acid Chemical compound O[Se](O)=O MCAHWIHFGHIESP-UHFFFAOYSA-N 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 229940067741 sodium octyl sulfate Drugs 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 229960000776 sodium tetradecyl sulfate Drugs 0.000 description 1
- SUSMDRHYWTWRSA-UHFFFAOYSA-N sodium;antimony(3+) Chemical compound [Na+].[Sb+3] SUSMDRHYWTWRSA-UHFFFAOYSA-N 0.000 description 1
- XZTJQQLJJCXOLP-UHFFFAOYSA-M sodium;decyl sulfate Chemical compound [Na+].CCCCCCCCCCOS([O-])(=O)=O XZTJQQLJJCXOLP-UHFFFAOYSA-M 0.000 description 1
- HIEHAIZHJZLEPQ-UHFFFAOYSA-M sodium;naphthalene-1-sulfonate Chemical compound [Na+].C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 HIEHAIZHJZLEPQ-UHFFFAOYSA-M 0.000 description 1
- WFRKJMRGXGWHBM-UHFFFAOYSA-M sodium;octyl sulfate Chemical compound [Na+].CCCCCCCCOS([O-])(=O)=O WFRKJMRGXGWHBM-UHFFFAOYSA-M 0.000 description 1
- UPUIQOIQVMNQAP-UHFFFAOYSA-M sodium;tetradecyl sulfate Chemical compound [Na+].CCCCCCCCCCCCCCOS([O-])(=O)=O UPUIQOIQVMNQAP-UHFFFAOYSA-M 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 235000010356 sorbitol Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XHGGEBRKUWZHEK-UHFFFAOYSA-L tellurate Chemical compound [O-][Te]([O-])(=O)=O XHGGEBRKUWZHEK-UHFFFAOYSA-L 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-N tellurous acid Chemical compound O[Te](O)=O SITVSCPRJNYAGV-UHFFFAOYSA-N 0.000 description 1
- CALMYRPSSNRCFD-UHFFFAOYSA-J tetrachloroiridium Chemical compound Cl[Ir](Cl)(Cl)Cl CALMYRPSSNRCFD-UHFFFAOYSA-J 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
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Abstract
本發明係關於含有某些添加劑的鉑電解質,且係關於用於在根據本發明之電解質的幫助下電解沉積鉑層之方法。
Description
本發明係關於含有某些添加劑的鉑電解質,且亦係關於用於在根據本發明之電解質的幫助下電解沉積鉑層之方法。
使用鉑的電鍍及電鑄係廣泛用於飾品及珠寶的生產中,不只是因為鉑具有明亮光澤及美感外觀,亦是因為其具有高化學及機械惰性。因此,鉑亦可作為用於插頭連接及接觸件材料之塗層。
電鍍浴係含有金屬鹽的溶液,電化學金屬沉澱物可從該溶液沉積於基材(物品)上。此類電鍍浴亦通常稱為「電解質」。因此,在下文中將水性電鍍浴稱為「電解質」。
基於鉑(II)及鉑(IV)化合物的酸性及鹼性浴或電解質係用於鉑的電沉積。最重要的浴類型含有二氨二亞硝酸鉑(II)(P鹽)、硫酸根合二亞硝基鉑酸(DNS)、或六羥基鉑酸、或其鹼金屬鹽。
在WO2013104877A1中,提出鉑電解質,其應在較長持續時間內穩定,並含有鉑離子來源及硼酸鹽離子來源。該浴通常具有良好的熱穩定性。該浴亦可用於廣泛之pH值範圍中。在某些實施例中,該等浴產生明亮且閃亮的沉積。
EP737760A1描述一種Pt電解質,其含有至多5 g/l的游離胺基硫酸(ASS、磺胺酸、胺磺酸、胺基磺酸)、及20至400 g/l的具有小於1之pH值的強酸。此處使用的胺基磺酸鉑胺(platinum amine sulfamate)錯合物證明在強酸性浴中意外地穩定,而無游離胺基硫酸。即使給定長電解持續時間,該浴未顯示出沉澱物形成。在鉑的沉積期間釋放的胺磺酸係經水解,因此不應累積在電解質中。然而,在較不強烈的酸性浴中及正常的電解溫度下,水解相對緩慢。
在DE1256504B中,提出酸性鉑電解質,使用該酸性鉑電解質可產生牢固附著的鉑層。在該電解質中,應存在超過20 mg/l的鉍,以便確保以此方式產生之陽極的某些過電壓特性。該電解質含有鹽酸。內部實驗已得出在電解質中較高的鉍濃度會負面地影響沉積結果。例如,在100 mg/l的情況下會獲得深色鉑沉積物。
US20100176001A1提到一種鉑電解質,除了其他物質外,其包含鉍在內亦應包含檸檬酸。目的在於獲得鉑或鉑合金的奈米粒子,其可用作為催化劑。未提及的是將過渡金屬添加至濃度為0.1 micromol/l至100 mol/l的電解質中為何係有利的。
對於接觸件材料的生產特別重要的是,達成電解塗層的高產出率,以便確保每工件的生產成本盡可能最低。此外,可達成這些產出率是因為將塗佈期間的電流密度選擇為非常高以提供鉑的快速沉積。然而,在來自酸性電解質(特別是具有氨基磺酸鉑(platinum ammine sulfamate)錯合物(類似於EP737760A1))之鉑的沉積期間,使用高電流密度產生呈雲形式的黑鉑粒子,其等累積在電解質中、併入至鉑層中、或附接至所沉積的鉑表面。此導致不均勻沉積物之增長。其等具有在光澤度、抗腐蝕性。及耐磨性方面的不利性質。為了從這些鉑電解質獲得無瑕疵的層,因此必須在低電流密度下沉積。
所提出之目標係以完全意外且有利的方式達到,此係因為:提供一種用於沉積鉑或鉑合金於導電基材上的水性、無氰化物電解質,該電解質包含由Ir、Bi、Sb、Se、及Te所組成之群組的一或多個離子且亦不含有鹽酸,其中Bi、Sb、Se、及Te係以電解質之至多100 mg/l的濃度存在,且Ir係以電解質之至多1000 mg/l的濃度存在(兩者分別相對於該金屬)。即使在高電流密度下,鉑或鉑合金沉積可非常快速地發生,而不在電解質中形成干擾沉積的鉑粒子之黑雲。此導致改良的生產力,且因此降低生產成本,並導致無瑕疵的層。
所屬技術領域中具有通常知識者已知的鉑電解質可用作為電解質,以用於本目的。有利地,使用此一Pt電解質,其具有胺基磺酸鉑錯合物。後者可係選自由下列所組成之群組:H
2[Pt(NH
2SO
3)
2SO
4]、H
2[Pt (NH
2SO
3)
2SO
3]、H
2[Pt(NH
2SO
3)
2Cl
2]、[Pt(NH
3)
2(NH
2SO
3)
4]、及[Pt(NH
3)
2(NH
2SO
3)
2]。H
2[Pt(NH
2SO
3)
4]及[Pt(NH
3)
2(NH
2SO
3)
2]亦可特別有利地使用。因而,可改變配位基對鉑的莫耳比。所屬技術領域中具有通常知識者從先前技術中已知此類電解質。例如,在EP737760A1中所引用者。此類電解質亦係可商購的(來自Umicore Galvanotechnik GmbH公司的PLATUNA
®H 1;PLATUNA
®S 1;PLATUNA
®N 1 Platinum Electrolyte | Electroplating (umicore.com))。
在來自根據本發明之電解質的鉑之沉積中,由Bi、Sb、Se、Ir、及Te所組成之群組的一或多個離子可共同沉積至某一程度。接著所獲得之沉積具有1 ppm至5000 ppm,較佳地100至2000 ppm之對應使用金屬。此同樣地適用於鉑合金的沉積。作為進一步的合金金屬,所屬技術領域中具有通常知識者認為適合本目的之所有者均納入考量。合金金屬較佳地係PGM貴金屬Rh、Pd、Ru、Re,及還有諸如Ni、Co、Cu、Cu、Fe等的非貴金屬,其中Rh在此情況下特別係較佳的。即使在PtRh合金電解質具有Pt錯合物的情況下,黑雲在高安培數下依然出現在電解沉積中,此可藉由使用根據本發明之由Ir、Bi、Sb、Se、及Te所組成之群組的一或多個離子而避免。
考慮作為合適導電基材的是在酸性pH範圍中可使用根據本發明之電解質所塗佈者。這些較佳的是含貴金屬的基材或在卑(less noble)基材上的對應塗層。此係關於例如鐵質材料,其係已鍍鎳或銅鍍並隨後可選地鍍金、預鍍鈀、預鍍鉑、或以銀塗佈。從而,用於鎳鍍或銅鍍的中繼層亦可由對應合金電解質製成,例如,NiP、NiW、NiMo、NiCo、NiB、Cu、CuSn、CuSnZn、CuZn等。進一步基材材料可係已用導電銀漆預塗佈(電鑄)的蠟核心。
考慮作為有助於在沉積期間防止游離鉑形成在電解質中之合適的添加劑係具有呈離子形式之Bi、Sb、Se、Ir、及Te原子的水溶性化合物。其等可在電解質中單獨使用、或可選地組合使用。添加劑Bi、Sb、Se、及Te的量應經定量,使得不超過電解質之100 mg/l的濃度。低於50 mg/l的濃度係有利的,且這些添加劑在電解質中的濃度特別較佳地係5至20 mg/l。因此,濃度係相對於金屬而言。在此,銥係一例外,其係以至多1000 mg/l(亦即,例如100至1000 mg/l),較佳地200至700 mg/l,且非常特別較佳地300至600 mg/l的濃度來添加。
可藉由所屬技術領域中具有通常知識者已知之化合物的手段來將鉍同樣添加至電解質中。鉍較佳地係以(III)氧化態存在。在此情況下,有利的化合物係選自下列者:氧化鉍(III)、氫氧化鉍(III)、氟化鉍(III)、氯化鉍(III)、溴化鉍(III)、碘化鉍(III)、甲磺酸鉍(III)、硝酸鉍(III)、酒石酸鉍(III)、檸檬酸鉍(III)(特別是檸檬酸鉍銨)。
使用在該電解質中之硒或碲化合物可由所屬技術領域中具有通常知識者在上文指示之濃度架構內適當選擇。合適的硒及碲化合物係以+4或+6氧化態存在之硒或碲者。在以+4氧化態存在之硒或碲的電解質中,硒及碲化合物可有利地使用。硒及碲化合物特別較佳地係選自下列者:亞碲酸鹽、亞硒酸鹽、亞碲酸、亞硒酸、碲酸、硒酸、硒氰酸鹽(selenocyanates)、碲氰酸鹽(tellurocyanates)、及硒酸鹽,以及碲酸鹽。因此,使用碲化合物而非硒化合物通常係較佳的。特別較佳的是,將呈亞碲酸之鹽形式(例如,呈亞碲酸鉀之形式)的碲添加至電解質。
考慮作為可添加至電解質之合適的銥化合物係在不同氧化態下的化合物。諸如下列銥化合物:例如,氯化銥(III)、氯化銥(IV)、六氯銥酸(III) (hexachloroiridium(III))、六氯銥酸(IV)、六氯銥酸[Na,K,銨](III)、六氯銥酸[Na,K,銨](IV)、溴化銥(III)、溴化銥(IV)、六溴銥酸(III)、六溴銥酸(IV)、六溴銥酸[Na,K,銨](III)、六溴銥酸[Na,K,銨](IV)、硫酸銥(III)、硫酸銥(IV)。此外,對應的碘化物。較佳地使用銥氯化合物,更佳地係硫酸銥。
可添加至電解質的銻化合物對於所屬技術領域中具有通常知識者是已知的。此等可係選自由下列所組成之銻化合物(III)群組:氟化銻(III)、氯化銻(III)、氧化銻(III)、酒石酸氧鈉銻(III)、具有糖醇的銻化合物(III)(例如,甘油、山梨醇(sorbitol)、甘露醇(mannitol)等)。較佳地使用氧化銻(III)及酒石酸氧鈉銻(III)。氧化銻(III)係非常特別較佳地用於本目的。
在本電解質中,取決於應用而言,進一步一般可能使用陰離子及非離子界面活性劑作為潤濕劑,諸如例如聚乙二醇加成物、脂肪醇硫酸鹽、烷基硫酸鹽、烷基磺酸鹽、芳基磺酸鹽、烷基芳基磺酸鹽、雜芳基硫酸鹽、甜菜鹼、氟界面活性劑、及其鹽及衍生物(亦參見:Kanani, N: Galvanotechnik; Hanser Verlag, Munich Vienna, 2000; pp. 84 ff)。潤濕劑亦例如係經取代之甘胺酸衍生物,其在商業上已知為Hamposyl
®。Hamposyl
®係由N-醯基肌氨酸(N-acyl sarcosinates)所組成,亦即,脂肪酸醯基殘基及N-甲基甘胺酸(肌胺酸)的凝結產物。使用這些浴所沉積的銀塗層係白色、具光澤、甚至具高度光澤。潤濕劑導致非多孔層。進一步有利的潤濕劑係選自下列群組者:
- 陰離子潤濕劑,諸如例如:n-十二醯基-n-甲基甘胺酸、(N-月桂醯肌氨酸)Na鹽、烷基膠原蛋白水解物水解物、2-乙基己酯硫酸鹽Na鹽(2-ethylhexyl sulfate Na salt)、月桂基醚硫酸鈉鹽、1-萘磺酸鈉鹽(1-naphthalene sulfonic acid Na salt)、1,5-萘二磺酸鈉鹽(1,5-naphthalene disulfonic acid Na salt)、單烷基硫酸鈉(諸如例如,十四基硫酸鈉、十二烷基硫酸鈉、乙基己酯硫酸鈉、癸硫酸鈉(sodium decyl sulfate)、辛硫酸鈉(sodium octyl sulfate)及其混合物)係特別有利的;
- 非離子潤濕劑,諸如例如:β-萘酚乙氧基鉀鹽(beta-naphthol ethoxylate potassium salt)、脂肪醇聚乙二醇醚、聚乙烯亞胺、聚乙二醇、及其混合物。具有分子量低於2,000 g/mol的潤濕劑;
- 陽離子潤濕劑,諸如例如:1H-咪唑-1-乙烯基(或3-甲基)-,甲硫酸均聚物。
根據本發明之電解質係使用在酸性pH範圍中,但亦可在不同pH範圍中操作,例如至多pH 9。在該電解質中之4至0.1的pH值之情況下可獲得最佳結果。所屬技術領域中具有通常知識者將知道如何調整該電解質之pH值。此較佳的是在強酸性範圍中,更佳的是<2。極度有利的是選擇強酸性沉積條件,其所給定之pH值係小於2,且可能甚至在極端情況下到達低於1或甚至0.5。
原則上,可按所屬技術領域中具有通常知識者的需要來調整pH值。然而,所屬技術領域中具有通常知識者將會以下列概念作為指導方針:盡量少引入額外物質至該電解質中,其可能會不利影響所提及合金之沉積。在一特別較佳的實施例中,該pH值因此將僅藉由添加酸來調整。因此,可使用所有化合物,該等活合物在所屬技術領域中具有通常知識者的認知下均適用於對應的應用。其等將較佳地使用強酸用於此目的,特別是甲磺酸或礦酸,諸如硫酸或正磷酸。
除了上述物質之外,根據本發明之鉑電解質含有盡可能少的其他物質,因為沉積之劣化的風險隨著各額外添加劑而增加。除了上述成分之外,可能的是僅將導電鹽(諸如硫酸鈉、K硫酸、或對應的磷酸鹽)加入至電解質。在一較佳實施例中,根據本發明之電解質特別不包含任何檸檬酸。
本發明電解質提供一閃亮的沉積物,其給出一類似銀的表象。所沉積的鉑層有利地具有超過+82的L*值。根據Cielab色彩系統(EN ISO 11664-4,至申請日為止之最新版本),a*值較佳地係-1至1,且b*值係介於+2與+9之間。該等值係使用Konica Minolta CM-700d判定。
同樣地,本發明之標的係用於沉積鉑或鉑合金層於導電基材上的方法,在該方法中,使用根據本發明之電解質;陽極、及作為陰極之待塗佈基材與電解質接觸;且在陽極與陰極之間建立一電流流動。
在鉑之沉積期間所普遍使用的溫度可由所屬技術領域中具有通常知識者視需要來選擇。因此具有通常知識者一方面將以適當之沉積速率及可應用之電流密度範圍作為指導方針,另一方面將以該電解質之經濟面向或穩定性作為指導方針。有利的是,將電解質的溫度設定為20℃至90℃、較佳地40℃至70℃、且特別較佳地45℃至65℃。
如已指示,根據本發明之電解質係酸性類型。關於電解質之pH值的波動可在電解期間發生。在本發明之一個較佳實施例中,所屬技術領域中具有通常知識者將因而進行使得其等監測電解期間之pH值,並在有必要時將其調整至設定點值。所屬技術領域中具有通常知識者知道如何在此處進行。
在用於技術及裝飾應用的機架操作中,一般係沉積0.1至10 µm之範圍中的層厚度,其中電流密度係在自1至5 A/dm
2的範圍中。對於技術應用,有時亦沉積至多25 µm的層厚度。在優先用於根據本發明之電解質的連續系統中,在盡可能最高的沉積速率下沉積大約0.5至大約5 µm之相對大範圍內的層厚度,且因此使用例如介於0.5與10 A/dm
2之間之盡可能最高的電流密度。此外,亦存在著特殊的應用,其中沉積數個10 µm至至多幾毫米之相對高的層厚度,例如在電鑄的情況下。
除了直流電,亦可施用脈衝式直流電。因此,電流流動經中斷達一特定時間期間(脈衝電鍍)。簡單脈衝條件(例如諸如在平均電流密度下之1 s電流流動(t
on)及0.5 s脈衝暫停(t
off))的施加產生出均質、具光澤、且白的塗層。
在沉積程序期間,在該電解質中在該陰極與該陽極之間建立的電流密度可由所屬技術領域中具有通常知識者基於沉積效率及沉積品質來選擇。取決於應用及塗佈系統類型,該電解質中之電流密度有利地係設定為0.2至50 A/dm
2。如有必要,電流密度可藉由調整系統參數來提高或降低,系統參數諸如塗佈單元(coating cell)之設計、流率、陽極或陰極關係等。0.5至50 A/dm
2之電流密度係有利的,1至25 A/dm
2係較佳的,且5至20 A/dm
2係特別較佳的。
在本發明之上下文中,低、中、及高電流密度範圍定義如下:
- 低電流密度範圍:0.1至0.75 A/dm
2;
- 中電流密度範圍:大於0.75 A/dm
2至2 A/dm
2;
- 高電流密度範圍:大於2 A/dm
2。
根據本發明之電解質及根據本發明之方法可用於鉑塗層之電解沉積,以用於技術應用(例如,電氣插頭連接器及印刷電路板),及用於裝飾應用(諸如,珠寶及手錶)。對於技術應用,較佳地使用連續系統。
使用該電解質時可採用各式陽極。因此僅可使用不可溶陽極。較佳地作為不可溶陽極係由選自由下列所組成的群組之材料所製成者:鍍鉑鈦、石墨、混合型金屬氧化物、玻璃碳陽極、及特殊碳材料(「類鑽碳(diamond-like carbon)」、DLC)、或這些陽極之組合。以混合型金屬氧化物塗佈之鍍鉑鈦或鈦的不可溶陽極係有利的,其中該混合型金屬氧化物較佳地係選自氧化銥、氧化釕、氧化鉭、及其混合物。銥過渡金屬混合氧化物陽極(其包含銥-釕混合氧化物、銥-釕-鈦混合氧化物、或銥-鉭混合氧化物)亦有利地係用於執行本發明。更多資訊可見於Cobley, A.J等人(The use of insoluble anodes in acid sulfate copper electrodeposition solutions, Trans IMF, 2001,79(3), pp. 113 and 114)。
根據本發明,用語「電解質浴(electrolyte bath)」理解為意指置於對應容器中,且在電解電流下、連同陽極及陰極使用之水性電解質。
根據本發明之電解質係水性的。化合物較佳地係可溶於電解質中的鹽或錯合物。因此,用語「可溶鹽(soluble salt)」及「可溶複合物(soluble complex)」係指在工作溫度下溶解於電解質中的彼等鹽及錯合物。因此,此工作溫度係電解沉積發生時的溫度。在本發明之上下文中,若至少1 mg/l之物質在工作溫度下溶解於電解質中,則將此物質視為可溶。
實例:
如下實施用於沉積之電解質製備。首先,將400 ml的去離子水放入至1 l燒杯中。接著,在密集攪拌下,添加酸之對應量、鉑之量、潤濕劑、及最後是對應的添加劑。接著用去離子水將此溶液補足至1 l之最終體積。已使用鎳及金預塗佈之測量為0.2 dm
2的黃銅片材在電解質及產物的移動下被塗佈。該沉積在1至20 A/dm
2的電流密度範圍內發生。評估電解質中之粒子形成。結果經記錄於下表中。
所顯示的是,與實驗1(無添加劑)相比,於沉積期間在電解質中具有添加劑的粒子形成顯著地最小化。
Claims (8)
- 一種用於沉積鉑或鉑合金於導電基材上的水性、無氰化物電解質, 其中 該電解質具有由Ir、Bi、Sb、Se、及Te所組成之群組的一或多個離子,且不含有鹽酸,其中Bi、Sb、Se、及Te係以電解質之至多100 mg/l的一濃度存在,且Ir係以電解質之至多1000 mg/l的一濃度存在。
- 如請求項1之電解質, 其中 該電解質具有胺基磺酸鉑錯合物。
- 如請求項1或2之電解質, 其中 該電解質具有<2的pH。
- 如請求項1或2之電解質, 其中 該電解質不具有檸檬酸。
- 一種用於沉積鉑或鉑合金層於一導電基材上的方法, 其中 使用如請求項1至4中任一項之電解質;一陽極、及作為陰極之待塗佈的該基材與該電解質接觸;且在陽極與陰極之間建立一電流流動。
- 如請求項5之方法, 其中 該電解質在沉積期間的溫度係20℃至90℃。
- 如請求項5或6之方法, 其中 沉積係在連續系統中執行。
- 如請求項7之方法, 其中 在沉積期間的電流密度係介於0.5至50 A/dm 2之間。
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