TW202243041A - 在晶圓上印刷焊料的方法及其系統 - Google Patents

在晶圓上印刷焊料的方法及其系統 Download PDF

Info

Publication number
TW202243041A
TW202243041A TW110149057A TW110149057A TW202243041A TW 202243041 A TW202243041 A TW 202243041A TW 110149057 A TW110149057 A TW 110149057A TW 110149057 A TW110149057 A TW 110149057A TW 202243041 A TW202243041 A TW 202243041A
Authority
TW
Taiwan
Prior art keywords
solder
wafer
printing
onto
desoldering
Prior art date
Application number
TW110149057A
Other languages
English (en)
Inventor
文成 張
Original Assignee
馬來西亞商益納利科技私人有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 馬來西亞商益納利科技私人有限公司 filed Critical 馬來西亞商益納利科技私人有限公司
Publication of TW202243041A publication Critical patent/TW202243041A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41F—PRINTING MACHINES OR PRESSES
    • B41F15/00—Screen printers
    • B41F15/08—Machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41F—PRINTING MACHINES OR PRESSES
    • B41F15/00—Screen printers
    • B41F15/14—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41F—PRINTING MACHINES OR PRESSES
    • B41F35/00—Cleaning arrangements or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M1/00—Inking and printing with a printer's forme
    • B41M1/12—Stencil printing; Silk-screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742—Apparatus for manufacturing bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41P—INDEXING SCHEME RELATING TO PRINTING, LINING MACHINES, TYPEWRITERS, AND TO STAMPS
    • B41P2215/00—Screen printing machines
    • B41P2215/10—Screen printing machines characterised by their constructional features
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41P—INDEXING SCHEME RELATING TO PRINTING, LINING MACHINES, TYPEWRITERS, AND TO STAMPS
    • B41P2215/00—Screen printing machines
    • B41P2215/50—Screen printing machines for particular purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41P—INDEXING SCHEME RELATING TO PRINTING, LINING MACHINES, TYPEWRITERS, AND TO STAMPS
    • B41P2235/00—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • H01L2224/1132—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11332—Manufacturing methods by local deposition of the material of the bump connector in solid form using a powder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/117—Manufacturing methods involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1181—Cleaning, e.g. oxide removal step, desmearing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
    • H01L2224/11849—Reflowing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13298—Fillers
    • H01L2224/13299—Base material
    • H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7515—Means for applying permanent coating, e.g. in-situ coating
    • H01L2224/75161—Means for screen printing, e.g. roller, squeegee, screen stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759—Means for monitoring the connection process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909—Post-treatment of the bump connector or bonding area
    • H01L2224/8191—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/81911—Chemical cleaning, e.g. etching, flux
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

本發明公開了一種在晶圓（101）上印刷焊料的方法，包括以下步驟：將焊料（102）沉積到所述晶圓（101）上；對沉積的所述焊料（102）進行聯機回流以在所述晶圓（101）上形成焊料凸塊（103）；並清潔回流的所述焊料凸塊（103）。上述在晶圓（101）上印刷焊料的方法是基於一系統包括以下裝置：晶圓焊料印刷機（1）、聯機回流裝置（2）、去焊裝置（3），其中每個步驟的參數通過分階段過程控制方法進行最佳化。

Description

在晶片上印刷焊料的方法及其系統
本發明涉及一種用於在晶圓上印刷焊料的方法，特別是與分階段過程控制中最佳化參數一同使用的用於在晶圓上印刷焊料的方法，以在預定時間段內實現相當高的產量。
目前，在晶圓級電路和元件組裝產業中，焊料印刷技術利用一個模板在晶圓頂表面上印刷焊料或用焊料材料填充晶圓中的通孔。因為通孔的垂直深度遠大於印刷在晶圓表面上的焊墊的低高度，所以模板昂貴且製造和使用複雜。在晶圓級焊料圖案化（wafer-level solder patterning）過程中使用模板也很耗時，因為用焊料填充通孔比在晶圓表面印刷薄焊墊需要更長的時間。嘗試加速處理將會導致焊料圖案位置不精確或通孔中焊料量不足。
目前已提出了許多與焊料印刷相關的技術來改進系統。例如，Kay 等人提出題為「Stencil Printing Technology for Wafer Level Bumping at sub-100 Micron Pitch Using Pb-Free Alloys」的出版物中公開了一種間距小於100µm並且使用IPC type-6（15-5µm）粒度分佈的無鉛焊料的焊料印刷處理。研究結果證實，使用模板印刷處理可以在超細間距幾何形狀的晶圓上產生一致尺寸的漿料沉積物。還公開了可以通過選擇不同形狀的模板孔來控制焊料沉積，其中產生的焊料凸塊的印刷一致性和均勻性也受每次沉積的焊料體積的控制。除此之外，美國專利US5740730A號公開了一種用於在印刷電路板上形成黏合劑和焊墊以將電子元件表面安裝到電路板上的方法和設備。焊料通過具有多個第一開口的第一模板沉積在印刷電路板上。然後焊料在板上形成多個焊墊。此外，然後將第二模板定位在印刷電路板上，第二模板具有多個第二開口以及在其底面中的凹部，所述凹部被配置為接收所述多個焊墊。在第二模板定位在印刷電路板上之後，黏合材料通過第二模板的第二開口沉積在板上，以在板上形成多個黏合墊。
另一美國專利US5996488A號公開了一種製造用於電子源的基板的方法，所述基板包括多個電子發射裝置，每個電子發射裝置包括一對相對電極，多個電子發射裝置被佈置在基板上。所述方法包括以下步驟：製備具有對應於電極圖案的凹入部分的凹版，凹入部分的深度中有墨水，將層（blanket）壓在凹版上，使油墨從凹部內部轉移到層上，使層與基板接觸，以使油墨從層轉移到基板上，從而在基板上形成電極圖案。
美國專利US6443059B1號中公開的另一種技術記載了一種焊絲網印刷處理，包括以下步驟：提供其上具有多個晶片（chip）的晶圓，以及覆蓋晶片的鈍化層，其中接合焊墊具有形成於其上的多個凸塊下金屬（under bump metal，UBM）結構；在晶圓上形成圖案層，其中圖案層具有多個第一開口，以界定晶片上後續形成凸塊的位置；提供具有晶圓安裝位置的載體， 提供安裝在載體上的安裝支撐裝置， 其中安裝支撐裝置具有晶圓尺寸的第二開口，使得載體的晶圓安裝位置可以通過第二開口暴露出；通過安裝支撐裝置的第二開口將晶圓安裝在載體上；並以焊料填充第一開口。
本發明的一個目的是提供一種具有最佳化參數的分階段過程控制，以在預定時間段內實現相當高的產量。還有一個目的是為晶圓焊料印刷處理流程中的每個階段提供這些最佳化參數，以在製造半導體製品時實現更高的效率和生產率。
在本發明的一方面，提供一種在晶圓上印刷焊料的方法，包括以下步驟：通過晶圓焊料印刷機將焊料沉積到所述晶圓上；通過聯機回流裝置（inline reflow means）對沉積的所述焊料進行聯機回流以在所述晶圓上形成焊料凸塊；以及通過去焊裝置清潔回流的所述焊料凸塊，其中每個步驟的參數通過分階段過程控制方法進行最佳化。
優選地，此方法還包括一個檢查所述焊料凸塊的步驟。
優選地，所述分階段過程控制用於在大約7小時的最大操作時間內達成大約99%至99.5%的目標產率。
優選地，所述晶圓焊料印刷機以基本上30mm/s至40mm/s的速度範圍沉積所述焊料。
優選地，所述晶圓焊料印刷機使用刮漿板將範圍大致在6kg至8kg的壓力施加到沉積的所述焊料上。
優選地，使用所述去焊裝置來完成所述焊料凸塊的清潔。
優選地，所述晶圓在清洗過程中以預定間隔裝載至所述去焊裝置中。
優選地，在大致50°C至120°C的溫度範圍內操作所述去焊裝置。
優選地，使用三維自動光學檢查（AOI）裝置以及通過X射線裝置檢查所述焊料凸塊。
在本發明的另一方面，提供一種在晶圓上印刷焊料的系統，所述系統包括：晶圓焊料印刷機，用於將焊料沉積到所述晶圓上；聯機回流裝置用於對沉積的所述焊料進行聯機回流以在所述晶圓上形成焊料凸塊；以及去焊裝置，用於清潔回流的所述焊料凸塊，其中所述系統通過分階段過程控制進行最佳化的參數執行根據上述的方法。
優選地，所述分階段過程控制用於在大約7小時的最大操作時間內達成大約99%至99.5%的目標產率。
優選地，使用三維（3D）自動光學檢查（AOI）裝置以及通過X射線裝置檢查所述焊料凸塊。
本領域的技術人員將容易理解，本發明很好地適用於實現並獲得所提到的以及其中固有的目標和優點。此處描述的實施例不旨在限制本發明的範圍。
在下文中，將根據本發明的優選實施例並參考所附描述和附圖來描述本發明。然而，應當理解，將描述限制於本發明的優選實施例僅僅是為了便於對本發明的討論，並且可以設想，本領域的技術人員能設計各種修改而不脫離所附請求項的範圍。
現在將參照附圖以示例的方式更詳細地描述本發明。
圖1是說明將焊料印刷到晶圓101上的系統的方塊圖，所述系統包括晶圓焊料印刷機1，其被配置為將焊料102沉積到晶圓上。焊料102是保持在特殊形式的焊接熔劑中的微小焊球的混合物，所述混合物具有膏的質地。印刷機1的目的是在欲焊接的晶圓101上的每個焊墊上準確地沉積正確的量。這可以通過絲網印刷焊料102來實現，並以通過模板103為佳，但也可以通過噴墨印刷來施加。所述系統還包括聯機回流裝置2，其用於對沉積的焊料102進行聯機回流以在晶圓101上形成焊料凸塊104，其中聯機回流裝置2以回流爐為佳。聯機回流處理是使用焊料102將多個微小的電子元件臨時附著到它們的接觸焊墊上的處理，之後，整個組件將受到受控的加熱。回流處理的目標是使焊料102達到共晶溫度，在所述溫度下焊料102經歷到液體或熔融狀態的相變，其中熔化的焊料表現出粘附特性，並在電子元件和晶圓101之間產生永久焊點。
在一優選實施例中，所述系統包括去焊裝置3，其用於清潔聯機回流處理期間形成的焊料凸塊104。去焊是一種清潔處理，其被設計為不僅能從晶圓101去除焊接熔劑殘留物和副產物，而且還去除諸如焊球、污垢、灰塵、有機材料和其他污染物的雜質。焊料印刷後殘留在晶圓101上的焊接熔劑痕跡必須完全去除，因焊接熔劑痕跡可能通過腐蝕、吸水和其他影響導致電路永久性故障。優選地，去焊處理包括在用水沖洗和乾燥晶圓101之前用能夠溶解焊接熔劑殘留物的溶劑清洗晶圓101的表面。
除此之外，所述系統還包括三維（3D）自動光學檢查（automated optical inspection，AOI）裝置4以及X射線裝置5，其用於在完成去焊處理後檢查晶圓101上的焊料凸塊104。操作3D的AOI裝置4以檢查和檢測焊料凸塊104，以檢測出可能包括污跡、壓印、破碎的焊料凸塊104、不足的焊料量、過小或過大的焊料凸塊104、氧化等。3D的AOI裝置4可以進一步檢查和/或檢測焊料凸塊104表面上的焊接熔劑殘留物。在特定實施例中，X射線裝置5能夠檢查小焊料凸塊104體積和大焊料凸塊104的體積，並且還能檢測焊料凸塊104的空隙，其基本上是單個焊料凸塊104尺寸的25%。進一步，系統中每台機器的關鍵參數將在本文中參考圖2進一步討論。
圖2是說明基於上述系統的在晶圓101上印刷焊料的方法的流程圖。首先，將晶圓101裝入晶圓焊料印刷機1。如圖3所示，在步驟201中，將模板放置在晶圓101的頂部，隨後通過使用刮漿板105將焊料102印刷到晶圓101上。優選地，模板103的直徑可以大致為100µm，間距為175µm，每個孔徑之間的孔徑間隔基本上為25µm至75µm。刮漿板105是用於施加必要的力以將焊料102移動穿過模板103並移到晶圓101上的工具，其中刮漿板105可以由金屬和/或聚氨酯製成。焊料印刷處理將焊料102沉積到晶圓101上的印刷速度基本上以30mm/s至40mm/s的範圍內為佳，同時刮漿板105的葉片施加基本上6kg到8kg的壓力。在印刷循環期間，需要在刮漿板105的整個長度上施加足夠的壓力以確保對模板103進行乾淨的擦拭。壓力太小會導致焊料102「塗抹」在模板103上、沉積不良、以及不完全轉移至晶圓101。壓力過大則會導致焊料102從較大的孔中「戽取（scooping）」、模板103和刮漿板105過度磨損、並且可能導致模板103和晶圓101之間的焊料102「滲出」。另一個需要注意的關鍵參數是在將焊料102施加到模板103和晶圓101上時刮漿板105的角度。刮漿板103的角度也優選通過固定刮漿板105的支架設置為60°。如果角度增加會導致焊料102從模板103的孔中「戽取」，導致更少的焊料102沉積到晶圓101 上。然而，如果角度減小，在刮漿板105完成印刷後，可能會導致焊料102的殘留物留在模板103上。
在一優選實施例中，焊料印刷處理基本上最多操作7小時，其中在7小時內採用具有最佳化參數的分階段過程控制。優選地，首先檢查焊料102的黏度，以使焊料102不黏附在刮漿板105上。此外，焊料102以前後動作的方式被揉捏到模板103上，直到焊料102達到期望的黏度。一旦焊料102達到所需黏度，印刷處理通過將焊料102均勻地沉積在晶圓101上的模板103的孔中而開始。在大約7小時的操作中，可以檢查焊料102的一致性以確保印刷機1的性能處於最佳效率。
在步驟202，將晶圓101裝載到聯機回流裝置2中，其中晶圓101頂部的焊料102殘留物形成焊料凸塊104。聯機回流裝置2包括多個回流段，以9個為佳，其控制溫度基本上為250°C，以完全固化焊料凸塊104。優選地，以預定速率加熱晶圓101以確保其沒有缺陷，例如在回流處理過程中元件破裂或焊料102飛濺。此外，在一個完整的回流循環中，聯機回流裝置2運行中的含氧量的最小值基本上也可以被控制在75PPM。每個焊料凸塊104可以具有大致為45µm至55µm的凸塊高度，直徑範圍為大致90µm至110µm，並且焊料凸塊104的最大共面度大致為10µm。
在步驟203，將晶圓101裝入去焊裝置3進行清洗。在一優選實施例中，去焊裝置3需要在清潔過程期間以預定間隔將晶圓101裝載至去焊裝置3中。一旦裝入後，在清洗過程中需要將有源（active）晶圓101表面朝下，以便在重力的幫助下將有源晶圓101表面上的所有柔性殘留物或化學物質沖洗掉。清潔過程的一些特性/參數包括清洗夾具的基本為轉動速度60至80 RPM，時間基本為3至5秒，溫度範圍為基本為50°C至120°C，清洗循環為25至60個循環，化學濃度基本為13%至20%；以及在預熱溫度下，容器攪拌時間大約800至1000秒，以促進容器中的化學反應和晶圓101的清潔效果。
在另一優選實施例中，乾燥的晶圓101在被轉移到生產線的下一站之前被傳送到3D的AOI裝置4和X射線裝置5進行進一步檢查。特別是，3D的AOI裝置4檢查幾個標準，其中包括橫跨整個晶圓101的大致40至65µm的平均凸塊高度（average bump height，ABH）性能、焊料凸塊104的缺陷檢測、以及晶圓101表面上的焊接熔劑殘留檢測。焊料凸塊104的缺陷可能包括污跡、壓印、破碎、不足的焊料量、過小、過大、以及氧化等。然而，X射線裝置5檢查標準，例如，焊料凸塊104的空洞最多達到焊料凸塊104尺寸的25％、大小焊料凸塊104的體積、以及焊料凸塊104的可追溯性。
本公開包括如所附請求項以及前文描述所包含的內容。儘管本發明已經以其優選形式進行了特別描述，應當理解，優選形式的本公開僅作為示例，並且在不背離本發明的範圍的情況下，可以對結構細節以及部件的組合和佈置進行許多改變。
1:晶圓焊料印刷機 2:聯機回流裝置 3:去焊裝置 4:三維（3D）自動光學檢查（AOI）裝置 5:X射線裝置 101:晶圓 102:焊料 103:模板 104:焊料凸塊 105:刮漿板 201、202、203:步驟
為了便於理解本發明，在附圖中示出了優選的實施例，當結合以下描述考慮時，本發明的構造和操作以及其許多優點將很容易被理解及被欣賞。 圖1是說明將焊料印刷到晶圓上的方法的方塊圖。 圖2示出了將焊料印刷到晶圓上的方法的示例性實施例。 圖3示出了將焊料沉積到晶圓上的示例性實施例。
1、2、3、4、5:裝置

Claims (12)

  1. 一種在晶圓（101）上印刷焊料的方法，包括以下步驟： 通過晶圓焊料印刷機（1）將焊料（102）沉積到該晶圓（101）上； 通過聯機回流裝置（2）對沉積的該焊料（102）進行聯機回流以在該晶圓（101）上形成焊料凸塊（103）；以及 通過去焊裝置（3）清潔回流的該焊料凸塊（103）， 其中每個步驟的參數通過分階段過程控制進行最佳化。
  2. 如請求項1所述的方法，還包括以下步驟：檢查該焊料凸塊（103）。
  3. 如請求項1或2所述的方法，其中該分階段過程控制用於在大約7小時的最大操作時間內達成大約99%至99.5%的目標產率。
  4. 如前述請求項任一項所述的方法，其中該晶圓焊料印刷機（1）以基本上30mm/s至40mm/s的速度範圍沉積該焊料（102）。
  5. 如前述請求項任一項所述的方法，其中該晶圓焊料印刷機（1）使用刮漿板（105）將範圍大致在6kg至8kg的壓力施加到沉積的該焊料（102）上。
  6. 如前述請求項任一項所述的方法，其中使用該去焊裝置（3）來完成該焊料凸塊（103）的清潔。
  7. 如前述請求項任一項所述的方法，其中該晶圓（101）在清洗過程中以預定間隔裝載至該去焊裝置（3）中。
  8. 如請求項6或7所述的方法，其中在大致50°C至120°C的溫度範圍內操作該去焊裝置（3）。
  9. 如前述請求項任一項所述的方法，其中使用三維（3D）自動光學檢查（AOI）裝置（4）以及通過X射線裝置（5）檢查該焊料凸塊（103）。
  10. 一種在晶圓（101）上印刷焊料的系統，該系統包括： 晶圓焊料印刷機（1），用於將焊料（102）沉積到該晶圓（101）上； 聯機回流裝置（2），用於對沉積的該焊料（102）進行聯機回流以在該晶圓（101）上形成焊料凸塊（103）；以及 去焊裝置（3），用於清潔回流的該焊料凸塊（103）， 其中該系統通過分階段過程控制進行最佳化的參數執行根據請求項1-9任一項所述的方法。
  11. 如請求項10所述的系統，其中該分階段過程控制用於在大約7小時的最大操作時間內達成大約99%至99.5%的目標產率。
  12. 如請求項10或11任一項所述的系統，其中使用三維（3D）自動光學檢查（AOI）裝置（4）以及通過X射線裝置（5）檢查該焊料凸塊（103）。
TW110149057A 2021-01-06 2021-12-28 在晶圓上印刷焊料的方法及其系統 TW202243041A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI2021000051 2021-01-06
MYPI2021000051 2021-01-06

Publications (1)

Publication Number Publication Date
TW202243041A true TW202243041A (zh) 2022-11-01

Family

ID=82218992

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110149057A TW202243041A (zh) 2021-01-06 2021-12-28 在晶圓上印刷焊料的方法及其系統
TW112201375U TWM644821U (zh) 2021-01-06 2021-12-28 在晶圓上印刷焊料的系統

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112201375U TWM644821U (zh) 2021-01-06 2021-12-28 在晶圓上印刷焊料的系統

Country Status (4)

Country Link
US (1) US20220216170A1 (zh)
KR (1) KR20220099494A (zh)
CN (1) CN114714754A (zh)
TW (2) TW202243041A (zh)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759319B2 (en) * 2001-05-17 2004-07-06 Institute Of Microelectronics Residue-free solder bumping process
JP5246187B2 (ja) * 2010-03-15 2013-07-24 オムロン株式会社 Ｘ線検査装置、ｘ線検査方法およびプログラム
CN102947103B (zh) * 2010-05-28 2015-03-25 太阳化学工业株式会社 具有非晶质炭膜的网版印刷用孔版及其制造方法
US11450630B2 (en) * 2020-10-27 2022-09-20 Cirrus Logic, Inc. Coupling of integrated circuits (ICS) through a passivation-defined contact pad

Also Published As

Publication number Publication date
CN114714754A (zh) 2022-07-08
TWM644821U (zh) 2023-08-11
US20220216170A1 (en) 2022-07-07
KR20220099494A (ko) 2022-07-13

Similar Documents

Publication Publication Date Title
TW200945978A (en) Solder ball printing device
JP4631851B2 (ja) はんだプリコート方法および電子機器用ワーク
KR100557549B1 (ko) 플립칩 범프 패드 형성 방법 및 그 구조
US20210352808A1 (en) Method and device for applying solder paste flux
KR100669061B1 (ko) 리플로 납땜 방법
US6722557B2 (en) Flux cleaning method and method of manufacturing semiconductor device
TW202243041A (zh) 在晶圓上印刷焊料的方法及其系統
US5722579A (en) Bottom-surface-metallurgy rework process in ceramic modules
WO2007029866A1 (en) Method for attachment of solder powder to electronic circuit board and soldered electronic circuit board
TWI316835B (en) Method for attachment of solder powder to electronic circuit board and soldered electronic circuit board
US6637641B1 (en) Systems and methods for manufacturing a circuit board
US7159758B1 (en) Circuit board processing techniques using solder fusing
JP2002057453A (ja) 半導体装置のリペア方法
JPH0799216A (ja) バンプ付き回路基板の製造方法
JP2006313929A (ja) フリップチップ型ｉｃの製造方法、および、フリップチップ型ｉｃ実装回路基板の製造方法
JP3334728B2 (ja) 電子部品の電極端子および電極端子の表面処理方法
JP2005340282A (ja) バンプ形成装置及びバンプ形成方法
JP2024102008A (ja) プリコート工法
WO2009123808A2 (en) A solder bump bondig method, stencil. and system
KR100994467B1 (ko) 솔더범프 형성장치 및 방법
WO2008114465A1 (en) Method of forming solder bumps and solder bump-forming assembly
JP2006272970A (ja) 印刷マスクの清掃方法
JPH07142843A (ja) 厚膜微細パターン形成方法
Qu et al. WLCSP Assembly
JP2001340807A (ja) 液体塗布方法