TW202236695A - 受光裝置及測距裝置 - Google Patents

受光裝置及測距裝置 Download PDF

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Publication number
TW202236695A
TW202236695A TW110138806A TW110138806A TW202236695A TW 202236695 A TW202236695 A TW 202236695A TW 110138806 A TW110138806 A TW 110138806A TW 110138806 A TW110138806 A TW 110138806A TW 202236695 A TW202236695 A TW 202236695A
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TW
Taiwan
Prior art keywords
circuit
chip
pixel
light receiving
light
Prior art date
Application number
TW110138806A
Other languages
English (en)
Chinese (zh)
Inventor
小木純
Original Assignee
日商索尼半導體解決方案公司
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Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202236695A publication Critical patent/TW202236695A/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
    • G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
TW110138806A 2020-10-27 2021-10-20 受光裝置及測距裝置 TW202236695A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020179608 2020-10-27
JP2020-179608 2020-10-27

Publications (1)

Publication Number Publication Date
TW202236695A true TW202236695A (zh) 2022-09-16

Family

ID=81382319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110138806A TW202236695A (zh) 2020-10-27 2021-10-20 受光裝置及測距裝置

Country Status (6)

Country Link
US (1) US20230384431A1 (https=)
JP (1) JPWO2022091607A1 (https=)
CN (1) CN116547820A (https=)
DE (1) DE112021005742T5 (https=)
TW (1) TW202236695A (https=)
WO (1) WO2022091607A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230124908A (ko) * 2021-01-06 2023-08-28 소니 세미컨덕터 솔루션즈 가부시키가이샤 수광 소자 및 측거 시스템
JP2024004798A (ja) * 2022-06-29 2024-01-17 キヤノン株式会社 光電変換装置、光電変換システム
US20260033026A1 (en) * 2022-07-29 2026-01-29 Sony Semiconductor Solutions Corporation Photodetection device and ranging system
WO2024084792A1 (ja) * 2022-10-17 2024-04-25 ソニーセミコンダクタソリューションズ株式会社 光検出装置、測距装置、および、光検出装置の制御方法
WO2024150531A1 (ja) * 2023-01-13 2024-07-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置
CN119335509A (zh) * 2023-07-19 2025-01-21 上海禾赛科技有限公司 芯片模组及激光雷达
CN121795114A (zh) * 2023-09-27 2026-04-03 索尼半导体解决方案公司 半导体装置和光检测装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102553553B1 (ko) * 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
CN117558738A (zh) * 2017-04-04 2024-02-13 索尼半导体解决方案公司 固态摄像装置和电子设备
EP3570534B1 (en) * 2017-10-31 2021-12-01 Sony Semiconductor Solutions Corporation Imaging device and imaging system
JP2019158806A (ja) * 2018-03-16 2019-09-19 ソニーセミコンダクタソリューションズ株式会社 受光装置及び測距装置
CN117080233A (zh) * 2019-03-29 2023-11-17 索尼半导体解决方案公司 固态摄像装置和电子设备
JP7269787B2 (ja) 2019-04-26 2023-05-09 グンゼ株式会社 ポリプロピレン系延伸フィルムおよび包装用袋

Also Published As

Publication number Publication date
CN116547820A (zh) 2023-08-04
US20230384431A1 (en) 2023-11-30
DE112021005742T5 (de) 2023-08-31
JPWO2022091607A1 (https=) 2022-05-05
WO2022091607A1 (ja) 2022-05-05

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