TW202235664A - 氧化物半導體膜及其成膜方法、半導體裝置 - Google Patents

氧化物半導體膜及其成膜方法、半導體裝置 Download PDF

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TW202235664A
TW202235664A TW111107216A TW111107216A TW202235664A TW 202235664 A TW202235664 A TW 202235664A TW 111107216 A TW111107216 A TW 111107216A TW 111107216 A TW111107216 A TW 111107216A TW 202235664 A TW202235664 A TW 202235664A
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film
substrate
nozzle
oxide semiconductor
mist
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TW111107216A
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Chinese (zh)
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坂爪崇寛
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日商信越化學工業股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/52—Controlling or regulating the coating process
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  • Chemical & Material Sciences (AREA)
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  • Metallurgy (AREA)
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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW111107216A 2021-03-12 2022-03-01 氧化物半導體膜及其成膜方法、半導體裝置 TW202235664A (zh)

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WO2025173795A1 (ja) * 2024-02-15 2025-08-21 株式会社Flosfia 結晶膜、半導体装置および積層構造体の製造方法

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JPS5397794U (https=) 1977-01-12 1978-08-08
JP2671367B2 (ja) 1988-04-06 1997-10-29 富士通株式会社 気相エピタキシャル成長装置
JP5124760B2 (ja) 2004-04-19 2013-01-23 静雄 藤田 成膜方法及び成膜装置
JP2012046772A (ja) 2010-08-24 2012-03-08 Sharp Corp ミストｃｖｄ装置及びミスト発生方法
JP6137668B2 (ja) 2012-08-26 2017-05-31 国立大学法人 熊本大学 酸化亜鉛結晶層の製造方法及びミスト化学気相成長装置
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
JP5397794B1 (ja) 2013-06-04 2014-01-22 Ｒｏｃａ株式会社 酸化物結晶薄膜の製造方法
JP2020001997A (ja) * 2017-08-21 2020-01-09 株式会社Flosfia 結晶膜の製造方法
JP7315137B2 (ja) * 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物膜
EP3960914A4 (en) * 2019-04-24 2022-12-28 NGK Insulators, Ltd. SEMICONDUCTOR FILM
JP7409790B2 (ja) * 2019-06-20 2024-01-09 信越化学工業株式会社 酸化物半導体膜及び半導体装置
JP7301966B2 (ja) * 2019-06-25 2023-07-03 日本碍子株式会社 半導体膜
JP7265624B2 (ja) * 2019-06-28 2023-04-26 日本碍子株式会社 半導体膜
TWI849160B (zh) * 2019-06-28 2024-07-21 日商Ｆｌｏｓｆｉａ股份有限公司 蝕刻處理方法和半導體裝置的製造方法
WO2021048950A1 (ja) * 2019-09-11 2021-03-18 日本碍子株式会社 半導体膜
CN116018260B (zh) * 2020-09-24 2025-08-05 日本碍子株式会社 层叠结构体

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US20240136179A1 (en) 2024-04-25
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TWM634737U (zh) 2022-12-01
JP2025116201A (ja) 2025-08-07
CN217691180U (zh) 2022-10-28
EP4306676A1 (en) 2024-01-17
KR20230155442A (ko) 2023-11-10
CN116964243A (zh) 2023-10-27
US20240234138A9 (en) 2024-07-11
WO2022191230A1 (ja) 2022-09-15
EP4306676A4 (en) 2025-02-19

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