TW202234633A - 具有包括周邊互連的基板的封裝 - Google Patents

具有包括周邊互連的基板的封裝 Download PDF

Info

Publication number
TW202234633A
TW202234633A TW110148147A TW110148147A TW202234633A TW 202234633 A TW202234633 A TW 202234633A TW 110148147 A TW110148147 A TW 110148147A TW 110148147 A TW110148147 A TW 110148147A TW 202234633 A TW202234633 A TW 202234633A
Authority
TW
Taiwan
Prior art keywords
interconnects
substrate
integrated device
perimeter
peripheral
Prior art date
Application number
TW110148147A
Other languages
English (en)
Chinese (zh)
Inventor
安尼奇 佩托
弘博 魏
Original Assignee
美商高通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商高通公司 filed Critical 美商高通公司
Publication of TW202234633A publication Critical patent/TW202234633A/zh

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435Cross-sectional shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/862Bump connectors and strap connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Combinations Of Printed Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)
TW110148147A 2021-02-01 2021-12-22 具有包括周邊互連的基板的封裝 TW202234633A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/164,723 US11749611B2 (en) 2021-02-01 2021-02-01 Package with a substrate comprising periphery interconnects
US17/164,723 2021-02-01

Publications (1)

Publication Number Publication Date
TW202234633A true TW202234633A (zh) 2022-09-01

Family

ID=79730483

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110148147A TW202234633A (zh) 2021-02-01 2021-12-22 具有包括周邊互連的基板的封裝

Country Status (8)

Country Link
US (1) US11749611B2 (enExample)
EP (1) EP4285411A1 (enExample)
JP (1) JP7789073B2 (enExample)
KR (1) KR20230137330A (enExample)
CN (1) CN116783706A (enExample)
BR (1) BR112023014688A2 (enExample)
TW (1) TW202234633A (enExample)
WO (1) WO2022164559A1 (enExample)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62100726U (enExample) * 1985-12-13 1987-06-26
US6400575B1 (en) 1996-10-21 2002-06-04 Alpine Microsystems, Llc Integrated circuits packaging system and method
JP2000307203A (ja) * 1999-04-22 2000-11-02 Denso Corp 電子部品実装用基板
US6909052B1 (en) * 2002-08-23 2005-06-21 Emc Corporation Techniques for making a circuit board with improved impedance characteristics
JP2008147438A (ja) 2006-12-11 2008-06-26 Nec Electronics Corp 半導体装置
JP4967164B2 (ja) * 2008-03-19 2012-07-04 Necインフロンティア株式会社 多層プリント配線板及びそれを用いた電子機器
US9691694B2 (en) 2015-02-18 2017-06-27 Qualcomm Incorporated Substrate comprising stacks of interconnects, interconnect on solder resist layer and interconnect on side portion of substrate
US10373893B2 (en) * 2017-06-30 2019-08-06 Intel Corporation Embedded bridge with through-silicon vias
CN109564923B (zh) * 2018-06-28 2020-04-28 长江存储科技有限责任公司 具有屏蔽层的三维存储器器件以及用于制造其的方法
CN109219885A (zh) * 2018-07-20 2019-01-15 长江存储科技有限责任公司 三维存储器件
JP7133516B2 (ja) * 2019-06-24 2022-09-08 日立Astemo株式会社 信号伝送回路、電子制御装置
US11201139B2 (en) * 2020-03-20 2021-12-14 Sandisk Technologies Llc Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same
US11444019B2 (en) 2020-04-06 2022-09-13 Qualcomm Incorporated Package comprising a substrate with interconnect routing over solder resist layer and an integrated device coupled to the substrate and method for manufacturing the package
US11322466B2 (en) * 2020-05-20 2022-05-03 Sandisk Technologies Llc Semiconductor die containing dummy metallic pads and methods of forming the same
US11444039B2 (en) * 2020-05-29 2022-09-13 Sandisk Technologies Llc Semiconductor die including diffusion barrier layers embedding bonding pads and methods of forming the same

Also Published As

Publication number Publication date
WO2022164559A1 (en) 2022-08-04
US20220246531A1 (en) 2022-08-04
JP2024505488A (ja) 2024-02-06
BR112023014688A2 (pt) 2023-12-12
US11749611B2 (en) 2023-09-05
KR20230137330A (ko) 2023-10-04
EP4285411A1 (en) 2023-12-06
JP7789073B2 (ja) 2025-12-19
CN116783706A (zh) 2023-09-19

Similar Documents

Publication Publication Date Title
US11502049B2 (en) Package comprising multi-level vertically stacked redistribution portions
TW202232694A (zh) 具有包括與基板的表面對準的表面互連的基板的封裝
TWI893068B (zh) 包含基板與耦接至基板的高密度互連結構之封裝
CN115362550B (zh) 包括具有在阻焊层之上的互连路由线路的基板的封装件
TW202240831A (zh) 用於功率分配網路(pdn)效能提升的在基板之間包括被動元件的封裝
TW202238870A (zh) 具有包括層疊焊盤互連的基板的封裝
TW202243179A (zh) 包括基板和配置成用於對角佈線的互連裝置的封裝
TW202347656A (zh) 包括位於金屬化部分之間的互連晶粒的封裝
TW202230677A (zh) 包括嵌入阻焊層中的互連的基板
US20210296246A1 (en) Package comprising a substrate and a high-density interconnect integrated device coupled to the substrate
TW202329366A (zh) 包括具有高密度互連的基板的封裝
TW202234633A (zh) 具有包括周邊互連的基板的封裝
TWI922462B (zh) 包括基板以及耦合至基板的高密度互連整合元件的封裝
US20240105568A1 (en) Package comprising a substrate with interconnects
TW202407908A (zh) 包括整合裝置和耦合至第二金屬化部分的第一金屬化部分的封裝
TW202318583A (zh) 包括具有高密度互連的基板的封裝
TW202341376A (zh) 包括具有懸垂的堆疊式整合元件的封裝
TW202401690A (zh) 包括基板和配置用於高密度互連的互連晶粒的封裝
TW202349592A (zh) 包括具有被配置用於背側配電網的橋的基板的封裝