TW202232586A - 包含過渡金屬之半導體的處理方法、包含過渡金屬之半導體的製造方法及半導體用處理液 - Google Patents

包含過渡金屬之半導體的處理方法、包含過渡金屬之半導體的製造方法及半導體用處理液 Download PDF

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Publication number
TW202232586A
TW202232586A TW110148611A TW110148611A TW202232586A TW 202232586 A TW202232586 A TW 202232586A TW 110148611 A TW110148611 A TW 110148611A TW 110148611 A TW110148611 A TW 110148611A TW 202232586 A TW202232586 A TW 202232586A
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TW
Taiwan
Prior art keywords
etching
transition metal
ruthenium
acid
ion
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TW110148611A
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English (en)
Chinese (zh)
Inventor
吉川由樹
佐藤伴光
齋藤康平
鑓水優人
根岸貴幸
Original Assignee
日商德山股份有限公司
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Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202232586A publication Critical patent/TW202232586A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
TW110148611A 2020-12-25 2021-12-24 包含過渡金屬之半導體的處理方法、包含過渡金屬之半導體的製造方法及半導體用處理液 TW202232586A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020216867 2020-12-25
JP2020-216867 2020-12-25
JP2021-062341 2021-03-31
JP2021062341 2021-03-31

Publications (1)

Publication Number Publication Date
TW202232586A true TW202232586A (zh) 2022-08-16

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Family Applications (1)

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TW110148611A TW202232586A (zh) 2020-12-25 2021-12-24 包含過渡金屬之半導體的處理方法、包含過渡金屬之半導體的製造方法及半導體用處理液

Country Status (5)

Country Link
US (1) US20240055272A1 (https=)
JP (1) JPWO2022138561A1 (https=)
KR (1) KR20230122586A (https=)
TW (1) TW202232586A (https=)
WO (1) WO2022138561A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024161884A1 (ja) * 2023-01-31 2024-08-08 株式会社Adeka エッチング液組成物、エッチング方法、及び基体の製造方法
WO2026083966A1 (ja) * 2024-10-16 2026-04-23 株式会社トクヤマ 半導体処理液、処理方法及び半導体基板の製造方法
CN119901854B (zh) * 2025-03-31 2025-07-11 天津医学高等专科学校(天津市护士学校) 一种用于同步检测儿茶酚胺及其代谢物的试剂盒及检测方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2706211B2 (ja) * 1993-04-14 1998-01-28 財団法人神奈川科学技術アカデミー 半導体用エッチング液と結晶処理方法および半導体装置の製造方法
BRPI0418529A (pt) * 2004-02-11 2007-05-15 Mallinckrodt Baker Inc composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos
KR20070114025A (ko) * 2006-05-25 2007-11-29 주식회사 에스앤에스텍 블랭크 마스크 및 블랭크 마스크 제조 방법
WO2011074601A1 (ja) * 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
CN108701776B (zh) * 2016-02-16 2020-09-22 Lg伊诺特有限公司 金属板、沉积用掩模及其制造方法
WO2020049955A1 (ja) * 2018-09-06 2020-03-12 富士フイルム株式会社 薬液、基板の処理方法
US10982335B2 (en) * 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions
JP6670917B1 (ja) * 2018-12-18 2020-03-25 東京応化工業株式会社 エッチング液、被処理体の処理方法、及び半導体素子の製造方法。
KR20200096406A (ko) 2019-02-01 2020-08-12 주식회사 히타치하이테크 에칭 방법 및 플라스마 처리 장치
US20220010206A1 (en) * 2019-02-13 2022-01-13 Tokuyama Corporation Semiconductor wafer treatment liquid containing hypochlorite ions and ph buffer
WO2020166677A1 (ja) * 2019-02-13 2020-08-20 株式会社トクヤマ オニウム塩を含む半導体ウェハの処理液
US11070192B2 (en) * 2019-08-22 2021-07-20 Statek Corporation Torsional mode quartz crystal device

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Publication number Publication date
US20240055272A1 (en) 2024-02-15
WO2022138561A1 (ja) 2022-06-30
KR20230122586A (ko) 2023-08-22
JPWO2022138561A1 (https=) 2022-06-30

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