JPWO2022138561A1 - - Google Patents
Info
- Publication number
- JPWO2022138561A1 JPWO2022138561A1 JP2022571446A JP2022571446A JPWO2022138561A1 JP WO2022138561 A1 JPWO2022138561 A1 JP WO2022138561A1 JP 2022571446 A JP2022571446 A JP 2022571446A JP 2022571446 A JP2022571446 A JP 2022571446A JP WO2022138561 A1 JPWO2022138561 A1 JP WO2022138561A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/141—Amines; Quaternary ammonium compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
- H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020216867 | 2020-12-25 | ||
| JP2021062341 | 2021-03-31 | ||
| PCT/JP2021/047028 WO2022138561A1 (ja) | 2020-12-25 | 2021-12-20 | 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022138561A1 true JPWO2022138561A1 (https=) | 2022-06-30 |
Family
ID=82157952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022571446A Pending JPWO2022138561A1 (https=) | 2020-12-25 | 2021-12-20 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240055272A1 (https=) |
| JP (1) | JPWO2022138561A1 (https=) |
| KR (1) | KR20230122586A (https=) |
| TW (1) | TW202232586A (https=) |
| WO (1) | WO2022138561A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024161884A1 (ja) * | 2023-01-31 | 2024-08-08 | 株式会社Adeka | エッチング液組成物、エッチング方法、及び基体の製造方法 |
| WO2026083966A1 (ja) * | 2024-10-16 | 2026-04-23 | 株式会社トクヤマ | 半導体処理液、処理方法及び半導体基板の製造方法 |
| CN119901854B (zh) * | 2025-03-31 | 2025-07-11 | 天津医学高等专科学校(天津市护士学校) | 一种用于同步检测儿茶酚胺及其代谢物的试剂盒及检测方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08213376A (ja) * | 1993-04-14 | 1996-08-20 | Kanagawa Kagaku Gijutsu Akad | 半導体用エッチング液と結晶処理方法および半導体装置の製造方法 |
| WO2011074601A1 (ja) * | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
| JP2019507829A (ja) * | 2016-02-16 | 2019-03-22 | エルジー イノテック カンパニー リミテッド | 金属板、蒸着用マスクおよびその製造方法 |
| WO2020102655A1 (en) * | 2018-11-15 | 2020-05-22 | Tokyo Electron Limited | Wet atomic layer etching using self-limiting and solubility-limited reactions |
| JP2020097765A (ja) * | 2018-12-18 | 2020-06-25 | 東京応化工業株式会社 | エッチング液、被処理体の処理方法、及び半導体素子の製造方法。 |
| WO2020166676A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社トクヤマ | 次亜塩素酸イオン、及びｐＨ緩衝剤を含む半導体ウェハの処理液 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BRPI0418529A (pt) * | 2004-02-11 | 2007-05-15 | Mallinckrodt Baker Inc | composições de limpeza para microeletrÈnicos contendo ácidos de halogênio oxigenados, sais e derivados dos mesmos |
| KR20070114025A (ko) * | 2006-05-25 | 2007-11-29 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 블랭크 마스크 제조 방법 |
| WO2020049955A1 (ja) * | 2018-09-06 | 2020-03-12 | 富士フイルム株式会社 | 薬液、基板の処理方法 |
| KR20200096406A (ko) | 2019-02-01 | 2020-08-12 | 주식회사 히타치하이테크 | 에칭 방법 및 플라스마 처리 장치 |
| WO2020166677A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社トクヤマ | オニウム塩を含む半導体ウェハの処理液 |
| US11070192B2 (en) * | 2019-08-22 | 2021-07-20 | Statek Corporation | Torsional mode quartz crystal device |
-
2021
- 2021-12-20 WO PCT/JP2021/047028 patent/WO2022138561A1/ja not_active Ceased
- 2021-12-20 US US18/269,195 patent/US20240055272A1/en not_active Abandoned
- 2021-12-20 KR KR1020237019341A patent/KR20230122586A/ko active Pending
- 2021-12-20 JP JP2022571446A patent/JPWO2022138561A1/ja active Pending
- 2021-12-24 TW TW110148611A patent/TW202232586A/zh unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08213376A (ja) * | 1993-04-14 | 1996-08-20 | Kanagawa Kagaku Gijutsu Akad | 半導体用エッチング液と結晶処理方法および半導体装置の製造方法 |
| WO2011074601A1 (ja) * | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
| JP2019507829A (ja) * | 2016-02-16 | 2019-03-22 | エルジー イノテック カンパニー リミテッド | 金属板、蒸着用マスクおよびその製造方法 |
| WO2020102655A1 (en) * | 2018-11-15 | 2020-05-22 | Tokyo Electron Limited | Wet atomic layer etching using self-limiting and solubility-limited reactions |
| JP2020097765A (ja) * | 2018-12-18 | 2020-06-25 | 東京応化工業株式会社 | エッチング液、被処理体の処理方法、及び半導体素子の製造方法。 |
| WO2020166676A1 (ja) * | 2019-02-13 | 2020-08-20 | 株式会社トクヤマ | 次亜塩素酸イオン、及びｐＨ緩衝剤を含む半導体ウェハの処理液 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240055272A1 (en) | 2024-02-15 |
| WO2022138561A1 (ja) | 2022-06-30 |
| TW202232586A (zh) | 2022-08-16 |
| KR20230122586A (ko) | 2023-08-22 |
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