TW202223529A - 反射型光罩基底、反射型光罩及半導體裝置之製造方法 - Google Patents

反射型光罩基底、反射型光罩及半導體裝置之製造方法 Download PDF

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Publication number
TW202223529A
TW202223529A TW110135746A TW110135746A TW202223529A TW 202223529 A TW202223529 A TW 202223529A TW 110135746 A TW110135746 A TW 110135746A TW 110135746 A TW110135746 A TW 110135746A TW 202223529 A TW202223529 A TW 202223529A
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TW
Taiwan
Prior art keywords
film
reflective
absorber
pattern
substrate
Prior art date
Application number
TW110135746A
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English (en)
Chinese (zh)
Inventor
池邊洋平
Original Assignee
日商Ｈｏｙａ股份有限公司
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Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202223529A publication Critical patent/TW202223529A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW110135746A 2020-09-28 2021-09-27 反射型光罩基底、反射型光罩及半導體裝置之製造方法 TW202223529A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020162197 2020-09-28
JP2020-162197 2020-09-28

Publications (1)

Publication Number Publication Date
TW202223529A true TW202223529A (zh) 2022-06-16

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ID=80846511

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TW110135746A TW202223529A (zh) 2020-09-28 2021-09-27 反射型光罩基底、反射型光罩及半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US20230333459A1 (https=)
JP (2) JPWO2022065421A1 (https=)
KR (1) KR20230073186A (https=)
TW (1) TW202223529A (https=)
WO (1) WO2022065421A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6929340B2 (ja) * 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
JP7392236B1 (ja) 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JPWO2024154535A1 (https=) * 2023-01-16 2024-07-25
JPWO2024225163A1 (https=) 2023-04-28 2024-10-31
KR20240173984A (ko) 2023-06-07 2024-12-16 주식회사 엘지에너지솔루션 전지 셀 두께 측정 장치
WO2025120973A1 (ja) * 2023-12-05 2025-06-12 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
US20250216764A1 (en) * 2023-12-27 2025-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Euv lithography mask blanks, euv masks and methods
JP7553735B1 (ja) 2024-03-01 2024-09-18 株式会社トッパンフォトマスク 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
WO2026042468A1 (ja) * 2024-08-22 2026-02-26 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP4521753B2 (ja) * 2003-03-19 2010-08-11 Ｈｏｙａ株式会社 反射型マスクの製造方法及び半導体装置の製造方法
JP4099589B2 (ja) * 2004-02-20 2008-06-11 ソニー株式会社 マスクパターン補正方法、露光用マスクおよびマスク製造方法
JP4926523B2 (ja) * 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP4602430B2 (ja) 2008-03-03 2010-12-22 株式会社東芝 反射型マスク及びその作製方法
WO2010007955A1 (ja) * 2008-07-14 2010-01-21 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
KR101727783B1 (ko) 2010-06-15 2017-04-17 칼 짜이스 에스엠테 게엠베하 Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법
TWI623805B (zh) * 2015-08-17 2018-05-11 S&S Tech Co., Ltd. 用於極紫外線微影之空白遮罩及使用其之光罩
TWI821984B (zh) 2016-07-27 2023-11-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法
JP7059679B2 (ja) * 2018-02-19 2022-04-26 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク

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Publication number Publication date
KR20230073186A (ko) 2023-05-25
JPWO2022065421A1 (https=) 2022-03-31
WO2022065421A1 (ja) 2022-03-31
US20230333459A1 (en) 2023-10-19
JP2026020264A (ja) 2026-02-06

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