JPWO2024225163A1 - - Google Patents
Info
- Publication number
- JPWO2024225163A1 JPWO2024225163A1 JP2025516768A JP2025516768A JPWO2024225163A1 JP WO2024225163 A1 JPWO2024225163 A1 JP WO2024225163A1 JP 2025516768 A JP2025516768 A JP 2025516768A JP 2025516768 A JP2025516768 A JP 2025516768A JP WO2024225163 A1 JPWO2024225163 A1 JP WO2024225163A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023074391 | 2023-04-28 | ||
| PCT/JP2024/015451 WO2024225163A1 (ja) | 2023-04-28 | 2024-04-18 | 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024225163A1 true JPWO2024225163A1 (https=) | 2024-10-31 |
Family
ID=93256601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025516768A Pending JPWO2024225163A1 (https=) | 2023-04-28 | 2024-04-18 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20260099090A1 (https=) |
| JP (1) | JPWO2024225163A1 (https=) |
| KR (1) | KR20260002750A (https=) |
| TW (1) | TW202509624A (https=) |
| WO (1) | WO2024225163A1 (https=) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3612309B2 (ja) * | 1994-06-01 | 2005-01-19 | 三菱電機株式会社 | Ｘ線マスクの製造方法 |
| US7074527B2 (en) * | 2003-09-23 | 2006-07-11 | Freescale Semiconductor, Inc. | Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same |
| KR101948222B1 (ko) * | 2012-06-15 | 2019-02-14 | 에스케이하이닉스 주식회사 | 홀 패터닝을 위한 마스크패턴 및 그를 이용한 반도체장치 제조 방법 |
| KR101567057B1 (ko) * | 2013-11-15 | 2015-11-09 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
| JP6861095B2 (ja) * | 2017-03-03 | 2021-04-21 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| JP7479884B2 (ja) * | 2020-03-18 | 2024-05-09 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| JP7271760B2 (ja) * | 2020-03-27 | 2023-05-11 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法 |
| KR20230073186A (ko) | 2020-09-28 | 2023-05-25 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
-
2024
- 2024-04-18 KR KR1020257035281A patent/KR20260002750A/ko active Pending
- 2024-04-18 JP JP2025516768A patent/JPWO2024225163A1/ja active Pending
- 2024-04-18 WO PCT/JP2024/015451 patent/WO2024225163A1/ja not_active Ceased
- 2024-04-23 TW TW113115049A patent/TW202509624A/zh unknown
-
2025
- 2025-10-10 US US19/355,446 patent/US20260099090A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20260099090A1 (en) | 2026-04-09 |
| KR20260002750A (ko) | 2026-01-06 |
| WO2024225163A1 (ja) | 2024-10-31 |
| TW202509624A (zh) | 2025-03-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251007 |