TW202509624A - 反射型遮罩基底、反射型遮罩基底之製造方法、及反射型遮罩之製造方法 - Google Patents

反射型遮罩基底、反射型遮罩基底之製造方法、及反射型遮罩之製造方法 Download PDF

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Publication number
TW202509624A
TW202509624A TW113115049A TW113115049A TW202509624A TW 202509624 A TW202509624 A TW 202509624A TW 113115049 A TW113115049 A TW 113115049A TW 113115049 A TW113115049 A TW 113115049A TW 202509624 A TW202509624 A TW 202509624A
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TW
Taiwan
Prior art keywords
film
hard mask
phase shift
mask film
reflective
Prior art date
Application number
TW113115049A
Other languages
English (en)
Chinese (zh)
Inventor
永田裕也
中西英太
佐佐木健一
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202509624A publication Critical patent/TW202509624A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
TW113115049A 2023-04-28 2024-04-23 反射型遮罩基底、反射型遮罩基底之製造方法、及反射型遮罩之製造方法 TW202509624A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-074391 2023-04-28
JP2023074391 2023-04-28

Publications (1)

Publication Number Publication Date
TW202509624A true TW202509624A (zh) 2025-03-01

Family

ID=93256601

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113115049A TW202509624A (zh) 2023-04-28 2024-04-23 反射型遮罩基底、反射型遮罩基底之製造方法、及反射型遮罩之製造方法

Country Status (5)

Country Link
US (1) US20260099090A1 (https=)
JP (1) JPWO2024225163A1 (https=)
KR (1) KR20260002750A (https=)
TW (1) TW202509624A (https=)
WO (1) WO2024225163A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3612309B2 (ja) * 1994-06-01 2005-01-19 三菱電機株式会社 Ｘ線マスクの製造方法
US7074527B2 (en) * 2003-09-23 2006-07-11 Freescale Semiconductor, Inc. Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same
KR101948222B1 (ko) * 2012-06-15 2019-02-14 에스케이하이닉스 주식회사 홀 패터닝을 위한 마스크패턴 및 그를 이용한 반도체장치 제조 방법
KR101567057B1 (ko) * 2013-11-15 2015-11-09 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7479884B2 (ja) * 2020-03-18 2024-05-09 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP7271760B2 (ja) * 2020-03-27 2023-05-11 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
KR20230073186A (ko) 2020-09-28 2023-05-25 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
US20260099090A1 (en) 2026-04-09
JPWO2024225163A1 (https=) 2024-10-31
KR20260002750A (ko) 2026-01-06
WO2024225163A1 (ja) 2024-10-31

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