JPWO2022065421A1 - - Google Patents

Info

Publication number
JPWO2022065421A1
JPWO2022065421A1 JP2022552062A JP2022552062A JPWO2022065421A1 JP WO2022065421 A1 JPWO2022065421 A1 JP WO2022065421A1 JP 2022552062 A JP2022552062 A JP 2022552062A JP 2022552062 A JP2022552062 A JP 2022552062A JP WO2022065421 A1 JPWO2022065421 A1 JP WO2022065421A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022552062A
Other languages
Japanese (ja)
Other versions
JPWO2022065421A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022065421A1 publication Critical patent/JPWO2022065421A1/ja
Publication of JPWO2022065421A5 publication Critical patent/JPWO2022065421A5/ja
Priority to JP2025197533A priority Critical patent/JP2026020264A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2022552062A 2020-09-28 2021-09-24 Pending JPWO2022065421A1 (https=)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025197533A JP2026020264A (ja) 2020-09-28 2025-11-18 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020162197 2020-09-28
PCT/JP2021/035032 WO2022065421A1 (ja) 2020-09-28 2021-09-24 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025197533A Division JP2026020264A (ja) 2020-09-28 2025-11-18 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022065421A1 true JPWO2022065421A1 (https=) 2022-03-31
JPWO2022065421A5 JPWO2022065421A5 (https=) 2024-09-20

Family

ID=80846511

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022552062A Pending JPWO2022065421A1 (https=) 2020-09-28 2021-09-24
JP2025197533A Pending JP2026020264A (ja) 2020-09-28 2025-11-18 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025197533A Pending JP2026020264A (ja) 2020-09-28 2025-11-18 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20230333459A1 (https=)
JP (2) JPWO2022065421A1 (https=)
KR (1) KR20230073186A (https=)
TW (1) TW202223529A (https=)
WO (1) WO2022065421A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6929340B2 (ja) * 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
JP7392236B1 (ja) 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JPWO2024154535A1 (https=) * 2023-01-16 2024-07-25
JPWO2024225163A1 (https=) 2023-04-28 2024-10-31
KR20240173984A (ko) 2023-06-07 2024-12-16 주식회사 엘지에너지솔루션 전지 셀 두께 측정 장치
WO2025120973A1 (ja) * 2023-12-05 2025-06-12 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
US20250216764A1 (en) * 2023-12-27 2025-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Euv lithography mask blanks, euv masks and methods
JP7553735B1 (ja) 2024-03-01 2024-09-18 株式会社トッパンフォトマスク 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
WO2026042468A1 (ja) * 2024-08-22 2026-02-26 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005236074A (ja) * 2004-02-20 2005-09-02 Sony Corp マスクパターン補正方法、露光用マスクおよびマスク製造方法
JP2007273678A (ja) * 2006-03-31 2007-10-18 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
WO2010007955A1 (ja) * 2008-07-14 2010-01-21 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP2019144357A (ja) * 2018-02-19 2019-08-29 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP4521753B2 (ja) * 2003-03-19 2010-08-11 Ｈｏｙａ株式会社 反射型マスクの製造方法及び半導体装置の製造方法
JP4602430B2 (ja) 2008-03-03 2010-12-22 株式会社東芝 反射型マスク及びその作製方法
KR101727783B1 (ko) 2010-06-15 2017-04-17 칼 짜이스 에스엠테 게엠베하 Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법
TWI623805B (zh) * 2015-08-17 2018-05-11 S&S Tech Co., Ltd. 用於極紫外線微影之空白遮罩及使用其之光罩
TWI821984B (zh) 2016-07-27 2023-11-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005236074A (ja) * 2004-02-20 2005-09-02 Sony Corp マスクパターン補正方法、露光用マスクおよびマスク製造方法
JP2007273678A (ja) * 2006-03-31 2007-10-18 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
WO2010007955A1 (ja) * 2008-07-14 2010-01-21 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP2019144357A (ja) * 2018-02-19 2019-08-29 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク

Also Published As

Publication number Publication date
KR20230073186A (ko) 2023-05-25
TW202223529A (zh) 2022-06-16
WO2022065421A1 (ja) 2022-03-31
US20230333459A1 (en) 2023-10-19
JP2026020264A (ja) 2026-02-06

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