KR20230073186A - 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20230073186A
KR20230073186A KR1020237008212A KR20237008212A KR20230073186A KR 20230073186 A KR20230073186 A KR 20230073186A KR 1020237008212 A KR1020237008212 A KR 1020237008212A KR 20237008212 A KR20237008212 A KR 20237008212A KR 20230073186 A KR20230073186 A KR 20230073186A
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KR
South Korea
Prior art keywords
film
reflective mask
absorber
pattern
reflective
Prior art date
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Pending
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KR1020237008212A
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English (en)
Korean (ko)
Inventor
요헤이 이케베
Original Assignee
호야 가부시키가이샤
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Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20230073186A publication Critical patent/KR20230073186A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020237008212A 2020-09-28 2021-09-24 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Pending KR20230073186A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020162197 2020-09-28
JPJP-P-2020-162197 2020-09-28
PCT/JP2021/035032 WO2022065421A1 (ja) 2020-09-28 2021-09-24 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20230073186A true KR20230073186A (ko) 2023-05-25

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Family Applications (1)

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KR1020237008212A Pending KR20230073186A (ko) 2020-09-28 2021-09-24 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US20230333459A1 (https=)
JP (2) JPWO2022065421A1 (https=)
KR (1) KR20230073186A (https=)
TW (1) TW202223529A (https=)
WO (1) WO2022065421A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4657007A1 (en) 2023-06-07 2025-12-03 Lg Energy Solution, Ltd. Battery cell thickness measuring device and lamination device for secondary batteries, including same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6929340B2 (ja) * 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
JP7612408B2 (ja) * 2020-12-22 2025-01-14 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体デバイスの製造方法
JP7392236B1 (ja) 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JPWO2024154535A1 (https=) * 2023-01-16 2024-07-25
JPWO2024225163A1 (https=) 2023-04-28 2024-10-31
WO2025120973A1 (ja) * 2023-12-05 2025-06-12 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
US20250216764A1 (en) * 2023-12-27 2025-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Euv lithography mask blanks, euv masks and methods
JP7553735B1 (ja) 2024-03-01 2024-09-18 株式会社トッパンフォトマスク 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
WO2026042468A1 (ja) * 2024-08-22 2026-02-26 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004039884A (ja) 2002-07-04 2004-02-05 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2009212220A (ja) 2008-03-03 2009-09-17 Toshiba Corp 反射型マスク及びその作製方法
JP2013532381A (ja) 2010-06-15 2013-08-15 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用のマスク、ｅｕｖリソグラフィシステム、及びマスクの結像を最適化する方法
JP2019527382A (ja) 2016-07-27 2019-09-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 合金吸収体を有する極紫外線マスクブランク、及びその製造方法

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JP4521753B2 (ja) * 2003-03-19 2010-08-11 Ｈｏｙａ株式会社 反射型マスクの製造方法及び半導体装置の製造方法
JP4099589B2 (ja) * 2004-02-20 2008-06-11 ソニー株式会社 マスクパターン補正方法、露光用マスクおよびマスク製造方法
JP4926523B2 (ja) * 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
WO2010007955A1 (ja) * 2008-07-14 2010-01-21 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
TWI623805B (zh) * 2015-08-17 2018-05-11 S&S Tech Co., Ltd. 用於極紫外線微影之空白遮罩及使用其之光罩
JP7059679B2 (ja) * 2018-02-19 2022-04-26 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004039884A (ja) 2002-07-04 2004-02-05 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2009212220A (ja) 2008-03-03 2009-09-17 Toshiba Corp 反射型マスク及びその作製方法
JP2013532381A (ja) 2010-06-15 2013-08-15 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用のマスク、ｅｕｖリソグラフィシステム、及びマスクの結像を最適化する方法
JP2019527382A (ja) 2016-07-27 2019-09-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 合金吸収体を有する極紫外線マスクブランク、及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4657007A1 (en) 2023-06-07 2025-12-03 Lg Energy Solution, Ltd. Battery cell thickness measuring device and lamination device for secondary batteries, including same

Also Published As

Publication number Publication date
JPWO2022065421A1 (https=) 2022-03-31
TW202223529A (zh) 2022-06-16
WO2022065421A1 (ja) 2022-03-31
US20230333459A1 (en) 2023-10-19
JP2026020264A (ja) 2026-02-06

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