JPWO2024154535A1 - - Google Patents
Info
- Publication number
- JPWO2024154535A1 JPWO2024154535A1 JP2024571671A JP2024571671A JPWO2024154535A1 JP WO2024154535 A1 JPWO2024154535 A1 JP WO2024154535A1 JP 2024571671 A JP2024571671 A JP 2024571671A JP 2024571671 A JP2024571671 A JP 2024571671A JP WO2024154535 A1 JPWO2024154535 A1 JP WO2024154535A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023004643 | 2023-01-16 | ||
| PCT/JP2023/045963 WO2024154535A1 (ja) | 2023-01-16 | 2023-12-21 | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024154535A1 true JPWO2024154535A1 (https=) | 2024-07-25 |
Family
ID=91955800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024571671A Pending JPWO2024154535A1 (https=) | 2023-01-16 | 2023-12-21 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2024154535A1 (https=) |
| TW (1) | TW202445251A (https=) |
| WO (1) | WO2024154535A1 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5677852B2 (ja) * | 2008-12-26 | 2015-02-25 | Hoya株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
| US8962220B2 (en) * | 2009-04-02 | 2015-02-24 | Toppan Printing Co., Ltd. | Reflective photomask and reflective photomask blank |
| JP5766393B2 (ja) * | 2009-07-23 | 2015-08-19 | 株式会社東芝 | 反射型露光用マスクおよび半導体装置の製造方法 |
| WO2013031863A1 (ja) * | 2011-09-01 | 2013-03-07 | 旭硝子株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法 |
| KR20150058254A (ko) * | 2012-09-28 | 2015-05-28 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법, 그리고 euv 리소그래피용 반사형 마스크 및 그 제조 방법 |
| JP6845122B2 (ja) * | 2017-11-27 | 2021-03-17 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| JP6929983B1 (ja) * | 2020-03-10 | 2021-09-01 | Hoya株式会社 | 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法 |
| KR20230073186A (ko) * | 2020-09-28 | 2023-05-25 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
| JP2022124344A (ja) * | 2021-02-15 | 2022-08-25 | 株式会社トッパンフォトマスク | 反射型フォトマスクブランク及び反射型フォトマスク |
| JP7581107B2 (ja) * | 2021-03-29 | 2024-11-12 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体装置の製造方法 |
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2023
- 2023-12-21 JP JP2024571671A patent/JPWO2024154535A1/ja active Pending
- 2023-12-21 WO PCT/JP2023/045963 patent/WO2024154535A1/ja not_active Ceased
-
2024
- 2024-01-03 TW TW113100224A patent/TW202445251A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202445251A (zh) | 2024-11-16 |
| WO2024154535A1 (ja) | 2024-07-25 |