TW202445251A - 反射型光罩基底、反射型光罩、反射型光罩之製造方法 - Google Patents

反射型光罩基底、反射型光罩、反射型光罩之製造方法 Download PDF

Info

Publication number
TW202445251A
TW202445251A TW113100224A TW113100224A TW202445251A TW 202445251 A TW202445251 A TW 202445251A TW 113100224 A TW113100224 A TW 113100224A TW 113100224 A TW113100224 A TW 113100224A TW 202445251 A TW202445251 A TW 202445251A
Authority
TW
Taiwan
Prior art keywords
film
layer
reflective mask
reflective
substrate
Prior art date
Application number
TW113100224A
Other languages
English (en)
Chinese (zh)
Inventor
伊藤広朗
赤木大二郎
筆谷大河
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202445251A publication Critical patent/TW202445251A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW113100224A 2023-01-16 2024-01-03 反射型光罩基底、反射型光罩、反射型光罩之製造方法 TW202445251A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-004643 2023-01-16
JP2023004643 2023-01-16

Publications (1)

Publication Number Publication Date
TW202445251A true TW202445251A (zh) 2024-11-16

Family

ID=91955800

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113100224A TW202445251A (zh) 2023-01-16 2024-01-03 反射型光罩基底、反射型光罩、反射型光罩之製造方法

Country Status (3)

Country Link
JP (1) JPWO2024154535A1 (https=)
TW (1) TW202445251A (https=)
WO (1) WO2024154535A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5677852B2 (ja) * 2008-12-26 2015-02-25 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
US8962220B2 (en) * 2009-04-02 2015-02-24 Toppan Printing Co., Ltd. Reflective photomask and reflective photomask blank
JP5766393B2 (ja) * 2009-07-23 2015-08-19 株式会社東芝 反射型露光用マスクおよび半導体装置の製造方法
WO2013031863A1 (ja) * 2011-09-01 2013-03-07 旭硝子株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法
KR20150058254A (ko) * 2012-09-28 2015-05-28 아사히 가라스 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법, 그리고 euv 리소그래피용 반사형 마스크 및 그 제조 방법
JP6845122B2 (ja) * 2017-11-27 2021-03-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
KR20230073186A (ko) * 2020-09-28 2023-05-25 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP2022124344A (ja) * 2021-02-15 2022-08-25 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7581107B2 (ja) * 2021-03-29 2024-11-12 Hoya株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2024154535A1 (https=) 2024-07-25
WO2024154535A1 (ja) 2024-07-25

Similar Documents

Publication Publication Date Title
US11822229B2 (en) Reflective mask blank for EUV lithography, mask blank for EUV lithography, and manufacturing methods thereof
KR102698817B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
JP5348140B2 (ja) Ｅｕｖリソグラフィ用反射型マスクブランク
TWI850159B (zh) 附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法
KR101669690B1 (ko) Ｅｕｖ 리소그래피용 반사형 마스크 블랭크
TWI823862B (zh) 反射型遮罩基底及反射型遮罩
TWI855125B (zh) 附導電膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法
TWI879795B (zh) 附多層反射膜之基板、反射型光罩基底及反射型光罩、以及半導體裝置之製造方法
TWI877228B (zh) 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
TWI846116B (zh) 附有多層反射膜之基板、反射型光罩基底及反射型光罩、及半導體裝置之製造方法
TW202000954A (zh) 反射型光罩基底、反射型光罩及反射型光罩基底之製造方法
KR20070114025A (ko) 블랭크 마스크 및 블랭크 마스크 제조 방법
JP7838421B2 (ja) 反射型マスクブランク、反射型マスク、反射型マスクの製造方法
TW202403433A (zh) 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩、反射型光罩之製造方法
TW202445251A (zh) 反射型光罩基底、反射型光罩、反射型光罩之製造方法
CN111752085B (zh) 带多层反射膜的基板、反射型掩模坯料及反射型掩模、以及半导体装置的制造方法
US20250355340A1 (en) Reflective mask blank, method for producing reflective mask blank, reflective mask, and method for producing reflective mask
US20250224663A1 (en) Reflection-type mask blank, reflection-type mask, and method for manufacturing reflection-type mask
TW202540762A (zh) 反射型光罩基底、反射型光罩、反射型光罩之製造方法
TW202609452A (zh) 反射型光罩基底、反射型光罩、反射型光罩之製造方法
TW202538394A (zh) 反射型光罩基底、反射型光罩、反射型光罩之製造方法
JP2026035547A (ja) 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、反射型マスクブランクの製造方法
TW202605499A (zh) 反射型光罩基底、反射型光罩之製造方法
TW202532957A (zh) 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及反射型光罩之製造方法