TW202216894A - Insulation film for electronic device manufacturing - Google Patents

Abstract

The present invention provides an insulating film for manufacturing an electronic device as follows; the insulating film is a cured product of the composition; the composition includes: a thermosetting resin including an epoxy component; a thermoplastic resin; a curing agent; and a filler having an average particle size (D50) of 0.1 [mu] m to 3 [mu] m. The present invention can prevent the occurrence of cracks or bending or warping on a substrate during the lamination molding of the electronic component and the insulating film by defining the relationship between the coefficient of thermal expansion before the glass transition temperature (Tg) and the coefficient of thermal expansion after the glass transition temperature; excellent flexibility is shown; the invention can be applied to a flexible substrate, and can also be used as an interlayer adhesive film capable of thinning a multilayer printed circuit board.

Description

Insulating films for the manufacture of electronic devices

The present invention relates to an insulating film for manufacturing an electronic device, and more particularly, to an insulating film that has high heat resistance and low thermal expansion, minimizes bending or warpage of electronic device substrates, and can reduce defects in electronic device substrates Rate.

Recently, for thinning and high integration, circuit boards such as printed circuit boards (PCBs) are produced by sequentially laminating and crimping various build-up insulating films.

However, due to the imbalance in physical properties and coefficient of thermal expansion (Coefficient of Thermal Expansion) between different materials between the printed circuit board and the insulating film, warpage or warpage occurs in the printed circuit board to which the insulating film is bonded. When the printed circuit board is bent or warped, subsequent operations such as circuit formation and laser processing cannot be performed, and there may be a problem that the manufactured printed circuit board needs to be discarded or manual work is required. These problems occur because the difference between the thermal expansion coefficient of the insulating film and the thermal expansion coefficient of the printed circuit board to which the insulating film is attached, which occurs in the printed circuit board manufacturing process, is not accurately adjusted. In order to solve the above-mentioned problems, it is necessary to study the change of the thermal expansion coefficient according to the temperature of the insulating film.

The problem that the invention seeks to solve

In order to solve the above-mentioned problems, an object of the present invention is to provide an insulating film for manufacturing an electronic device which prevents the prevention by limiting the range of the average particle size of the filler contained in the insulating film composition and the range of the thermal expansion coefficient according to the temperature range of the insulating film. Bending or warping of the substrate.

However, the technical problems to be solved by the present invention are not limited to the above-mentioned problems, and those of ordinary skill in the technical field to which the present invention pertains can clearly understand other technical problems not mentioned through the following description.

technical means to solve problems

According to an embodiment of the present invention, the insulating film for manufacturing an electronic device of the present invention is a cured product of a composition comprising: a thermosetting resin, including an epoxy component; a thermoplastic resin; a curing agent; and a filler, with an average particle size The diameter (D50) is 0.1 μm to 3 μm, and the insulating film satisfies the general formula 1.

Formula 1

0.5＜log(α2/α1)＜0.8

In this general formula 1, α1 represents the thermal expansion coefficient before the glass transition temperature (Tg) of the insulating film, and α2 represents the thermal expansion coefficient after the glass transition temperature (Tg) of the insulating film.

Efficacy compared to prior art

The insulating film for manufacturing an electronic device of the present invention can prevent built-in by limiting the range of the average particle size of the filler, the thermal expansion coefficient before the glass transition temperature (Tg), and the thermal expansion coefficient after the glass transition temperature (Tg). A difference in thermal expansion coefficient occurs between the accessories inside the electronic device and the insulating film surrounding the electronic accessories. As a result, it is possible to prevent the substrate from cracking, bending or warping during the lamination molding process of the electronic component and the insulating film.

Also, the insulating film for manufacturing an electronic device of the present invention exhibits excellent flexibility, so that it can be applied not only to flexible substrates, but also as an interlayer adhesive film that can thin a multilayer printed circuit board.

The objects, specific advantages, and novel features of the present invention can be more clearly understood from the following detailed description and preferred embodiments in connection with the accompanying drawings. It should be noted that, in assigning reference numerals to structural elements in each drawing, even if shown in different drawings, the same structural elements are given the same reference numerals as much as possible. Also, terms such as "first", "second", "one side" and "the other side" are only used to distinguish one structural element from other structural elements, and the structural elements are not limited by the terms. Hereinafter, in describing the present invention, detailed descriptions of related well-known technologies that may unnecessarily obscure the gist of the present invention will be omitted.

The insulating film for manufacturing an electronic device of the present invention is a cured product of a composition comprising: a thermosetting resin including an epoxy component; a thermoplastic resin; a curing agent; and a filler having an average particle size (D50) of 0.1 μm to 3 μm, the insulating film satisfies the general formula 1.

Formula 1

0.5＜log(α2/α1)＜0.8

In this general formula 1, α1 represents the thermal expansion coefficient before the glass transition temperature (Tg) of the insulating film, and α2 represents the thermal expansion coefficient after the glass transition temperature (Tg) of the insulating film.

First, the composition for producing an insulating film of an electronic device of the present invention contains a thermosetting resin containing an epoxy component.

The thermosetting resin containing the epoxy component can impart heat resistance, bonding reliability between electronic device products, and adhesive functions to the insulating film. The thermosetting resin containing epoxy component is used as insulating resin material, preferably, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type ring Oxygen resin, dicyclopentadiene type epoxy resin, trisphenol epoxy resin, naphthol novolac epoxy resin, novolak type epoxy resin, tert-butylcatechol type epoxy resin, naphthalene type epoxy resin, Glycidylamine type epoxy resin, glycidyl ester type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin Resins, spiro ring-containing epoxy resins, cyclohexanedimethanol-type epoxy resins, naphthyl ether-type epoxy resins, trimethylol-type epoxy resins, etc., the epoxy resins may be used alone or in combination of two or more.

More specifically, the thermosetting resin may include a low-viscosity epoxy resin having a viscosity of 500 cps to 4000 cps at normal temperature (25° C.). Preferably, the thermosetting resin may comprise a low-viscosity epoxy resin with a viscosity of 1000cps to 3500cps at room temperature. More preferably, the thermosetting resin may comprise a low-viscosity epoxy resin with a viscosity of 1500cps to 3500cps at room temperature. If the thermosetting resin contains an epoxy resin with a viscosity of less than 500 cps, the insulating film vapor-deposited on the substrate overflows to the substrate, and thus a problem of increased bleed area may occur. The thermosetting resin of the present invention includes a low-viscosity epoxy resin with a viscosity of 500cps to 4000cps at room temperature. Due to its excellent fluidity, it can improve the filling and fluidity that can quickly penetrate into the gap between the electronic device product and the substrate. .

In addition, the thermosetting resin may contain an epoxy resin whose properties are solid at normal temperature (25° C.). If the thermosetting resin only contains liquid epoxy resin, the occurrence rate of voids between the substrate and the insulating film may increase with the increase of the tacky of the insulating film, thus, the gap between the electronic device products may increase. Bonding reliability may decrease. In addition, there is a possibility that the curing speed of the insulating film composition is lowered. Therefore, preferably, the thermosetting resin contains 20% to 80% by weight of epoxy resin with a solid state.

Then, the composition for manufacturing an insulating film of an electronic device of the present invention contains a thermoplastic resin.

When the insulating film composition is formed into a film form, the thermoplastic resin can impart mechanical properties that are not easily torn, broken, or stuck. In addition, since the stress is uniformly dispersed in the insulating film, the stress generated inside the insulating film under the condition of repeated flexing fatigue (flexing fatigue) applied to the substrate is uniformly dispersed and relieved, thereby imparting resistance to crack generation. As the thermoplastic resin, for example, polyester resin, polyether resin, polyamide resin, polyamide imide resin, polyimide resin, polyvinyl butyral resin, polyvinyl formal resin, Phenoxy resin, polyhydroxypolyether resin, polystyrene resin, butadiene resin, acrylonitrile butadiene copolymer, acrylonitrile butadiene styrene resin, styrene butadiene copolymer, etc. Use alone or in combination of two or more. Preferably, the thermoplastic resin can more effectively achieve the required physical properties of the insulating film by including one of acrylonitrile butadiene rubber (NBR) and phenoxy resin.

Then, the composition for manufacturing an insulating film of an electronic device of the present invention contains a curing agent.

The curing agent can improve the heat resistance of the insulating film. The curing agent is not particularly limited as long as it has the function of curing thermosetting resins. Preferably, an amine type hardener, a phenol type hardener, and an anhydride type curing agent can be used. type hardener) at least one.

Then, the composition for manufacturing an insulating film of an electronic device of the present invention contains a filler having an average particle diameter (D50) of 0.1 μm to 3 μm.

This filler can improve the mechanical properties of the insulating film, reduce stress, and reduce bleed due to viscosity increase in non-surface areas. In particular, the average particle diameter (D50) of the filler of the present invention is 0.1 μm to 3 μm. Preferably, the average particle size (D50) of the filler may be 0.2 μm to 3 μm. More preferably, the average particle size (D50) of the filler may be 0.5 μm to 2 μm. The average particle diameter (D50) of the filler can be measured using, for example, a laser diffraction method. This laser diffraction method can generally measure particle sizes ranging from submicron regions to several millimeters, and can obtain results with high reproducibility and high resolution. The filler of the present invention with an average particle size (D50) of 0.1 μm to 3 μm can realize a low thermal expansion coefficient of the insulating film, and can reduce the number of parts and enclosures built into the electronic device by reducing the increase rate of the thermal expansion coefficient of the insulating film at high temperature. Unbalance of thermal expansion coefficients between insulating films of this electronic component. As a result, it is possible to prevent the substrate from cracking, bending or warping during the layer-by-layer molding of the electronic component and the insulating film.

The kind of filler can be, for example, silica, alumina, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum borate, titanic acid Barium, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, barium zirconate, calcium zirconate, etc., the fillers can be used alone or in combination of two or more. Preferably, the filler is silica such as amorphous silica, fused silica, crystalline silica, synthetic silica, hollow silica, etc. More preferably, the filler can be spherical silica .

Then, with respect to 100 parts by weight of the thermosetting resin, the composition for manufacturing an insulating film of an electronic device of the present invention may include 10 parts by weight to 60 parts by weight of the thermoplastic resin, 5 parts by weight to 50 parts by weight of the cured resin agent, 50 to 400 parts by weight of the filler.

When the amount of the thermoplastic resin is less than 10 parts by weight relative to 100 parts by weight of the thermosetting resin, the insulating film becomes brittle in an incompletely cured state, and the contact surface between the insulating film and the substrate is broken. Furthermore, when the thermoplastic resin exceeds 60 parts by weight relative to 100 parts by weight of the thermosetting resin, a problem of separation of the insulating film from the substrate occurs during manufacture or use of electronic equipment.

When the amount of the curing agent is less than 5 parts by weight with respect to 100 parts by weight of the thermosetting resin, there may be a problem that the heat resistance of the insulating film is lowered. Furthermore, if the curing agent is more than 50 parts by weight with respect to 100 parts by weight of the thermosetting resin, there may be a problem that the adhesive force is lowered.

If the filler content is less than 50 parts by weight relative to 100 parts by weight of the thermosetting resin, the flame retardancy may decrease or the thermal expansion coefficient of the insulating film may increase. As a result, a difference in thermal expansion coefficient between the insulating film and the electronic equipment parts in contact with the insulating film occurs, so that cracks, bending or warping may occur, and problems such as peeling of the insulating film from the electronic equipment parts may occur. In addition, if the filler is more than 400 parts by weight relative to 100 parts by weight of the thermosetting resin, the adhesiveness of the insulating film may be reduced, and the problem of interface separation may occur during the manufacture of the substrate.

Then, the insulating film for manufacturing an electronic device of the present invention may further include a carrier film covering one side of the insulating film and a cover film covering the other side of the insulating film.

FIG. 1 shows a cross-sectional view of an insulating film with a carrier film and a cover film attached thereto according to an embodiment of the present invention. As shown in FIG. 1 , one side of the insulating film 100 of the present invention is covered with the carrier film 120 , and the other side of the insulating film 100 is covered with the cover film 110 . The carrier film 120 functions to protect the insulating film 100 from external environmental factors. Also, when the insulating film 100 is evaporated on the substrate 200 and the first circuit 210 , the carrier film 120 can be separated from the insulating film 100 . Although the type of the carrier film 120 is not limited, it is preferable to include oriented polypropylene (OPP: Oriented polypropylene) in consideration of the release force with the insulating film 100 and economical efficiency.

The cover film 110 protects the insulating film 100 from external environmental factors, and can prevent damage to the insulating film 100 via separation from the cured insulating film 100 when manufacturing a printed circuit board. Although the type of the cover film 110 is not particularly limited, it is preferable to include polyethylene terephthalate (PET: Polyethylene terepthalate) in view of the release force from the insulating film 100 after curing and economical efficiency.

Although the cross-sectional thickness of the insulating film 100 is not particularly limited, considering the application to printed circuit boards, if the cross-sectional thickness of the insulating film 100 is less than 25 μm, it is difficult to apply to process automation. If the cross-sectional thickness of the insulating film 100 is greater than 50 μm , the economical efficiency is reduced. Therefore, preferably, the cross-sectional thickness of the insulating film 100 is 25 μm to 50 μm.

In particular, the thermal expansion coefficient before the glass transition temperature (Tg) and the thermal expansion coefficient after the glass transition temperature (Tg) of the insulating film for manufacturing an electronic device of the present invention satisfy the following general formula 1.

Formula 1

0.5＜log(α2/α1)＜0.8

In this general formula 1, α1 represents the thermal expansion coefficient before the glass transition temperature (Tg) of the insulating film, and α2 represents the thermal expansion coefficient after the glass transition temperature (Tg) of the insulating film.

Generally, the thermal expansion coefficient of an insulating film is an important factor for determining heat resistance, dimensional stability of a circuit pattern formed on the insulating film, and the like. The thermal expansion coefficient of the insulating film can be measured by a thermomechanical analysis (TMA, thermomechanical analysis).

The manufacturing process of an electronic device such as a printed circuit board includes a process of sequentially laminating and crimping the insulating film, and in particular, the insulating film is subjected to a curing process after being attached to a substrate. That is, the insulating film containing the organic polymer substance undergoes an expansion phenomenon due to the movement of molecules in the polymer substance caused by the curing process, which may cause deformation of the thermal expansion characteristics of the insulating film.

As an example, FIG. 2 shows the printed circuit board 10 on which insulating films 110 a and 110 b according to an embodiment of the present invention are laminated. As shown in FIG. 2 , it can be confirmed that the insulating film 110 a is in contact with all the insulating films 110 b , the substrate 200 , the first circuit 210 and the second circuit 220 that are stacked. In the manufacture of the printed circuit board 10 , the thermal expansion coefficients of the insulating films 110 a and 110 b containing organic polymers are increased during the curing process at high temperature, and thus thermal expansion of the solid substrate 200 , the first circuit 210 and the second circuit 220 occurs. imbalance between coefficients. That is, the manufactured printed circuit board 10 may be cracked or bent or warped due to uneven thermal expansion coefficients in the interfaces (not shown) where the insulating film 110 a contacts the substrate 200 , the first circuit 210 and the second circuit 220 , respectively. song.

As described above, since the insulating films, 110a, 110b must undergo a high-temperature curing process in the printed circuit board manufacturing process, in addition to the thermal expansion coefficients of the insulating films 110a, 110b before curing, the insulating films during the high-temperature curing process The thermal expansion coefficients of 110a, 110b also affect product reliability. For example, even if the disequilibrium between the thermal expansion coefficient of the insulating film before curing and the thermal expansion coefficient of the substrate is not large, if the thermal expansion coefficient of the insulating film in the high-temperature curing process increases significantly, the thermal expansion coefficient of the insulating film and the thermal expansion coefficient of the substrate are unbalanced. May get bigger. In addition, even if there is some difference in the thermal expansion coefficient of the insulating film before curing, the difference between the thermal expansion coefficient of the insulating film and the substrate can be reduced if the thermal expansion coefficient of the insulating film does not increase significantly in the high-temperature curing process. unbalanced. That is, it is known that the thermal expansion coefficient of the insulating film before curing and the thermal expansion coefficient of the insulating film during high-temperature curing are closely related to each other in the manufacturing process of electronic devices such as printed circuit boards.

The present invention condenses an insulating film for manufacturing an electronic device whose thermal expansion coefficient before the glass transition temperature (Tg) and the thermal expansion coefficient after the glass transition temperature (Tg) satisfy the following general formula 1, so that the The insulating film of an electronic device has the effect of preventing an unbalanced increase in the thermal expansion coefficient between a component built in the electronic device and an insulating film surrounding the electronic component, and preventing the electronic component and the insulating film from being laminated during the molding process. The effect of cracking or bending or warping of the substrate.

Formula 1

0.5＜log(α2/α1)＜0.8

In this general formula 1, α1 represents the thermal expansion coefficient before the glass transition temperature (Tg) of the insulating film, and α2 represents the thermal expansion coefficient after the glass transition temperature (Tg) of the insulating film.

The insulating film of the present invention contains an organic polymer substance such as a thermosetting resin and a thermoplastic resin, and the thermosetting resin contains an epoxy component. As the temperature of the organic polymer substance contained in the insulating film increases, the molecules become active and start to move, and the time point at which the molecules become active and starts to move is called the glass transition temperature (Tg). The glass transition temperature (Tg) can be measured by a thermomechanical analysis (TMA) method.

More specifically, in this general formula 1, the glass transition temperature (Tg) may be 100°C to 190°C, in this general formula 1, α1 may represent a thermal expansion coefficient at a temperature from 50°C to 100°C, and α2 may be Indicates the thermal expansion coefficient at temperatures from 190°C to 210°C.

In this general formula 1, the relationship between the thermal expansion coefficient α1 before the glass transition temperature (Tg) of the insulating film and the thermal expansion coefficient α2 after the glass transition temperature (Tg) of the insulating film satisfies 0.5<log(α2/α1) <0.8, preferably, 0.514≤log(α2/α1)≤0.744 can be satisfied.

In this general formula 1, if log(α2/α1)≤0.5, since the thermal expansion coefficient before the glass transition temperature (Tg) is relatively higher than the thermal expansion coefficient after the glass transition temperature (Tg), the physical properties of the insulating film may be affected. changes, and thermal reliability may decrease. In addition, in this general formula 1, if 0.8≦log(α2/α1), since the thermal expansion coefficient after the glass transition temperature (Tg) is significantly higher than the thermal expansion coefficient before the glass transition temperature (Tg), it is built into the Unbalance in thermal expansion coefficients between the components inside the electronic device and the insulating film surrounding the electronic components increases significantly, so that the substrate may be cracked or bent or warped during lamination molding of the electronic components and the insulating film.

As an example, in the general formula 1, the thermal expansion coefficient represented by α1 may be 45 ppm/°C or higher, or the thermal expansion coefficient represented by α2 may be 250 ppm/°C or lower. If the coefficient of thermal expansion represented by α1 is less than 45ppm/°C, or the coefficient of thermal expansion represented by α2 is greater than 250ppm/°C, the peeling strength between the insulating film and the substrate may be reduced, and the insulating film may be separated from the substrate, or the insulating film may be separated from the substrate due to the Thermal expansion due to temperature changes reduces thermal reliability.

In order to have flexibility and be applied to thinning of flexible substrates and multilayer printed circuit boards, the insulating film for manufacturing electronic devices of the present invention may have a tensile elastic modulus of 0.5GPa to 5GPa at room temperature (25°C). Preferably, the tensile elastic modulus of the insulating film at normal temperature (25° C.) may be 0.5GPa to 4.5GPa. The tensile elastic modulus of this insulating film is a value measured when it is stretched at a speed of 10 mm/min under a humidity (RH) condition of 50%. If the tensile modulus of elasticity of the insulating film at room temperature is less than 0.5GPa, the insulating film may be easily broken due to external impact due to its low rigidity. If the tensile modulus of elasticity of the insulating film at room temperature is greater than 5.0 GPa, there is a possibility that although the rigidity of the insulating film is excellent, sufficient flexibility cannot be ensured.

The insulating film for manufacturing an electronic device of the present invention can be used in a printed circuit board that can be easily incorporated in a small space, and can also be used in a flexible printed circuit board that can be reduced in size and density and has repeatability.

Moreover, as the core accessories of electronic products, the printed circuit board can be used in mobile phones, cameras, notebook computers, computers and peripheral equipment, wearable equipment, video and audio equipment, camcorders, printers, high-density digital At least one of video disc (DVD) players, thin film field effect transistor (TFT)-liquid crystal display (LCD) devices, satellite equipment, military equipment and medical equipment, preferably, can be used in mobile phones, cameras, notebooks At least one of a computer and a wearable device.

Hereinafter, preferred examples will be provided to assist understanding of the present invention. However, the following examples are provided only for easier understanding of the present invention, and the content of the present invention is not limited by the following examples.

Example

1. Example 1

(1) Preparation of insulating film composition

40 parts by weight of a liquid epoxy resin with a viscosity of 2500cps to 2800cps (preparation company: KUKDO Chemical Company, product name: KDS8161) and 40 parts by weight of a solid epoxy resin (preparation company: NIPPON KAYAKU company, product name: KDS8161) : NC-3000), 20 parts by weight of phenoxy resin (preparation company: Gabriel company, product name: PKHH), 4 parts by weight of acrylonitrile-butadiene rubber (preparation company: ZEON company, product name: NIPOL 1072CGX) After stirring with 50 parts by weight of solvent naphtha, it was dissolved by heating. After cooling the mixture at room temperature, 40 parts by weight of a curing agent (preparation company: DIC company, product name: LA-7052) and 0.1 parts by weight of an imidazole-based curing accelerator (preparation company: SHIKOKU company, product name: 2E4MZ), 120 parts by weight of spherical silica (preparation company: ADMATEC, product name: SC-2050MB) whose surface was treated with epoxy silane having an average particle size of 0.5 μm, and uniformly dispersed using a mixer to prepare an insulating film combination thing.

(2) Preparation of insulating film

A polyethylene terephthalate film (preparation company: YOULCHON Chemical Co., product name: P38-S-3) was prepared as a cover film, and the insulating film composition was uniformly coated on the cover film using a coater. After the surface of the film is dried, it is dried at a temperature of 80° C. to 110° C. for 4 minutes, thereby forming an insulating film on the cover film. The cross-sectional thickness of the insulating film was 35 μm. On the surface of this insulating film, an oriented polypropylene film (manufacturing company: Ojitokushu Co., Ltd, product name: MA-411) was used as a carrier film, and the adhesive was prepared through lamination treatment under the conditions of 70° C. and normal pressure. Insulating film with cover film and carrier film.

(3) Attach the insulating film to the silicon wafer substrate

The insulating film from which the cover film has been removed is placed on the first surface of the silicon wafer substrate (the surface where the substrate and the semiconductor device are connected) with a diameter of 8 inches, a thickness of 500 μm, and bumps of Sn/Ag material on both sides (60 μm in height, 150 μm in pitch). After the contact, a vacuum coater was used for bonding under the conditions of a coating speed of 0.1 mm/min (min), a pressure of 0.3 Mpa, and a temperature of 200° C. to prepare an insulating film-attached silicon wafer substrate.

2. Example 2

In place of the composition of the insulating film in this Example 1, 120 parts by weight of spherical silica having an average particle diameter of 0.5 μm and a surface treated with aminosilane (manufacturing company: ADMATEC, product name: SC-2050MNS) was used instead of In the preparation process, an insulating film and a silicon wafer substrate with the insulating film attached were prepared in the same manner as in Example 1, except that epoxy silane was used to treat the spherical silica on the surface.

3. Example 3

Except adjusting the content of the curing agent to 30 parts by weight and adjusting the content of spherical silica with an average particle diameter of 0.5 μm to 110 parts by weight in the preparation process of the composition of the insulating film of Example 1, the same An insulating film and a silicon wafer substrate attached with the insulating film were prepared in the same manner as in Example 1.

4. Example 4

The same method as in Example 1 was carried out, except that the content of the curing agent (preparation company: DIC Corporation, product name: KA-1165) in the preparation process of the composition of the insulating film of Example 1 was adjusted to 40 parts by weight An insulating film and a silicon wafer substrate attached with the insulating film are prepared.

5. Example 5

Insulation was prepared in the same manner as in Example 4, except that the content of the phenoxy resin (preparation company: JER, product name: YX8100BH30) during the preparation of the composition of the insulating film of Example 4 was adjusted to 20 parts by weight A film and a silicon wafer substrate with the insulating film attached.

6. Example 6

An insulating film and a silicon wafer substrate to which the insulating film was attached were prepared in the same manner as in Example 1, except that the content of the phenoxy resin in the preparation process of the composition of the insulating film of Example 1 was adjusted to 40 parts by weight. .

7. Example 7

The insulating film and the insulating film were prepared in the same manner as in Example 1, except that the content of acrylonitrile-butadiene rubber in the preparation process of the composition of the insulating film of Example 1 was adjusted to 2 parts by weight. silicon wafer substrate.

8. Example 8

Except that the content of the liquid-phase epoxy resin (preparation company: KUKDO Chemical Co., product name: KDS8161) having a viscosity of 2500cps to 2800cps during the preparation of the composition of the insulating film of Example 1 was adjusted to 30 parts by weight, solid An insulating film and a silicon wafer substrate to which the insulating film was attached were prepared in the same manner as in Example 1 except that the content of the epoxy resin (preparation company: NIPPON KAYAKU, product name: NC-3000) was adjusted to 50 parts by weight.

9. Comparative Example 1

The same method as in Example 1 was carried out, except that alumina with an average particle size of 3.2 μm was used instead of spherical silica with an average particle size of 0.5 μm used in the preparation process of the composition of the insulating film of this Example 1 An insulating film and a silicon wafer substrate attached with the insulating film are prepared.

10. Comparative Example 2

The same procedure as in Example 1 was carried out, except that spherical silica with an average particle size of 0.08 μm was used instead of the spherical silica with an average particle size of 0.5 μm used in the preparation process of the composition of the insulating film of this Example 1 The method is used to prepare an insulating film and a silicon wafer substrate attached with the insulating film.

11. Comparative Example 3

The same method as in Example 1 was carried out, except that titanium oxide having an average particle diameter of 0.08 μm was used instead of spherical silica having an average particle diameter of 0.5 μm used in the preparation process of the composition of the insulating film of this Example 1. An insulating film and a silicon wafer substrate attached with the insulating film are prepared.

12. Comparative Example 4

The same procedure as in Example 1 was carried out, except that spherical silica having an average particle diameter of 3.15 μm was used instead of the spherical silica having an average particle diameter of 0.5 μm used in the preparation process of the composition of the insulating film of this Example 1 The method is used to prepare an insulating film and a silicon wafer substrate attached with the insulating film.

13. Comparative Example 5

The same method as in Example 1 was carried out except that titanium oxide having an average particle diameter of 3.2 μm was used instead of spherical silica having an average particle diameter of 0.5 μm used in the preparation process of the composition of the insulating film of this Example 1. An insulating film and a silicon wafer substrate attached with the insulating film are prepared.

Experimental Example 1. Measurement of thermal expansion coefficients (α1, α2) of insulating films

The insulating films prepared in Examples 1 to 8 and Comparative Examples 1 to 5 were used as test pieces of stripe morphology for evaluation. First, each of the test pieces was placed on a holder so that their lengths became 10 mm, a force of 0.05 N was applied to both ends, and the temperature of the test pieces was measured at a temperature increase rate of 10°C/min from 50°C to 250°C. stretch length. The inflection point seen in the temperature-increasing region is specified as the glass transition temperature (Tg). Then, the thermal expansion coefficient required at the same time is determined by measuring the glass transition temperature (Tg). The thermal expansion coefficient α1 at a temperature lower than the glass transition temperature (Tg) is calculated from the slope of the test piece stretched from 50°C to 100°C, and the thermal expansion coefficient at a temperature higher than the glass transition temperature (Tg) α2 is then calculated from the slope of the test piece stretched from 190°C to 210°C.

Experimental example 2. Determination of Tensile Elastic Modulus of Insulating Films

The insulating films prepared in Examples 1 to 8 and Comparative Examples 1 to 5 were made into test pieces having a width of 10 mm and a length of 100 mm. Each of the test pieces was attached to a tensile strength tester, and was stretched at a rate of 10 mm/min under the conditions of 25° C. and 50% humidity to measure the strength until breaking, and the tensile elastic modulus was measured by the following general formula 2. quantity.

Formula 2

Tensile elastic modulus=(F/S)/(△L/L)

*The above F represents the tensile strength, S represents the cross-sectional area of the test piece, △L represents the initial denaturation rate, and L represents the standard distance of the sample 20mm.

Experimental example 3. Bending or warpage determination of substrates

The maximum value of warpage or warpage of the silicon wafer substrate to which the insulating films prepared in Examples 1 to 8 and Comparative Examples 1 to 5 were attached was measured using a laser measuring apparatus.

Experimental example 4. Determination of cracks or peeling of substrates

100 silicon wafer substrates to which the insulating films prepared in Examples 1 to 8 and Comparative Examples 1 to 5 were attached were respectively taken, and a total of 1300 were taken and kept at a temperature of −45° C. for 30 minutes. After the temperature was raised to 125° C., the temperature was held for 30 minutes, and a thermal shock temperature loop test was performed. After the test was performed 1,000 times in total, cracks or peeling of the substrate were visually confirmed.

When no crack or peeling of the substrate was observed with the naked eye, it was judged to be acceptable.

The evaluation results of the above-mentioned Experimental Examples 1 to 4 are shown in Table 1 below.

Table 1 α1 Thermal Expansion Coefficient of Insulating Film (ppm/°C) α2 Thermal Expansion Coefficient of Insulating Film (ppm/°C) log(α2/α1)* Tensile modulus of elasticity (GPa) Bend or warp (μm) Number of substrates with no observed cracks or peeling Example 1 51 210 0.61 4.4 67 99 Example 2 45.7 223 0.69 4.1 52 98 Example 3 46.3 221 0.68 3.8 63 99 Example 4 51.1 200 0.59 2.9 53 99 Example 5 51 190 0.57 3.2 53 98 Example 6 46.5 201.2 0.64 2.8 55 99 Example 7 47.7 202 0.63 3.1 54 99 Example 8 48.3 199 0.61 3.5 49 98 Comparative Example 1 32 280 0.94 5.3 316 32 Comparative Example 2 45 320 0.85 5.1 222 45 Comparative Example 3 48 320 0.82 3.5 221 54 Comparative Example 4 55 170 0.49 2.1 128 98 Comparative Example 5 54.7 166 0.48 2.2 158 97

*In the above log(α2/α1), α1 represents the thermal expansion coefficient from 50°C to 100°C, and α2 represents the thermal expansion coefficient from 190°C to 210°C.

From this Table 1, it was confirmed that in the case of Comparative Examples 1 to 5 which did not satisfy the general formula 1 (0.5<log(α2/α1)<0.8), the difference in thermal expansion coefficient between the insulating film substrates caused the Substrate is significantly bent or warped. In addition, it was confirmed that many of the substrates of Comparative Examples 1 to 3 had cracks or peelings. The insulating films of Examples 1 to 8 satisfying the general formula 1 (0.5<log(α2/α1)<0.8) were hardly bent or warped on the substrate, and cracks and peeling were not observed in most of the substrates. In addition, it was confirmed that, due to its excellent elastic modulus, it can be used not only as a flexible substrate but also as an interlayer adhesive film that can reduce the thickness of a multilayer printed circuit board.

Although the present invention has been described in the manner as described above, the present invention is not limited by the embodiments disclosed in the present specification, and it is obvious that those skilled in the art to which the present invention pertains can make operations within the scope of the technical idea of the present invention. Various variants. Also, even if the effects brought about by the structures of the present invention are not clearly described in the foregoing description of the embodiments of the present invention, the predictable effects brought about by the related structures should be recognized.

10: Printed Circuit Board 100: insulating film 110: cover film 110a: insulating film 110b: insulating film 120: carrier film 200: Substrate 210: First Circuit 220: Second Circuit

FIG. 1 is a cross-sectional view showing an insulating film according to an embodiment of the present invention.

2 is a cross-sectional view showing a printed circuit board on which an insulating film according to an embodiment of the present invention is laminated.

100: insulating film

110: cover film

120: carrier film

200: Substrate

210: First Circuit

Claims (18)

An insulating film for manufacturing an electronic device, which is a cured product of a composition, the composition comprising: a thermosetting resin, including an epoxy component; a thermoplastic resin; a curing agent; and a filler with an average particle size (D50) of 0.1 μm to 3 μm, The insulating film satisfies the following general formula 1, Formula 1: 0.5<log(α2/α1)<0.8; In the general formula 1, α1 represents a coefficient of thermal expansion before a glass transition temperature (Tg) of the insulating film, and α2 represents a thermal expansion coefficient after the glass transition temperature (Tg) of the insulating film Thermal expansion coefficient. The insulating film for manufacturing an electronic device according to claim 1, wherein the glass transition temperature (Tg) is 100°C to 190°C. The insulating film for manufacturing an electronic device according to claim 1, wherein, in the general formula 1, α1 represents a thermal expansion coefficient at a temperature of 50°C to 100°C, and α2 represents a thermal expansion coefficient at a temperature of 190°C to 210°C Thermal expansion coefficient. The insulating film for manufacturing an electronic device according to claim 1, wherein, in the general formula 1, the thermal expansion coefficient represented by α1 is 45 ppm/°C or more. The insulating film for manufacturing an electronic device according to claim 1, wherein, in the general formula 1, the thermal expansion coefficient represented by α2 is 250 ppm/° C. or less. The insulating film for manufacturing an electronic device according to claim 1, wherein a tensile modulus of elasticity of the insulating film at a normal temperature of 25° C. is 0.5GPa to 5GPa. The insulating film for manufacturing an electronic device according to claim 1, wherein a thickness of the cross section of the insulating film is 25 μm to 50 μm. The insulating film for manufacturing an electronic device according to claim 1, wherein the thermosetting resin comprises a low-viscosity epoxy resin with a viscosity of 500cps to 4000cps at a normal temperature of 25°C. The insulating film for manufacturing an electronic device according to claim 1, wherein the epoxy component contains an epoxy component whose properties are solid at a normal temperature of 25°C. The insulating film for manufacturing an electronic device according to claim 1, wherein the thermoplastic resin comprises at least one of an acrylonitrile butadiene rubber (NBR) and a phenoxy resin. The insulating film for manufacturing an electronic device according to claim 1, wherein the curing agent comprises an amine type hardener, a phenol type hardener and an anhydride type hardener hardener) at least one. The insulating film for manufacturing an electronic device according to claim 1, wherein the filler is a spherical silica. The insulating film for manufacturing an electronic device according to claim 1, wherein, relative to 100 parts by weight of the thermosetting resin, the composition comprises 10 parts by weight to 60 parts by weight of the thermoplastic resin, 5 parts by weight to 50 parts by weight the curing agent, and the filler in 50 parts by weight to 400 parts by weight. The insulating film for manufacturing an electronic device according to claim 1, further comprising: a carrier film covering one side of the insulating film; and A cover film covers the other side of the insulating film. The insulating film for manufacturing an electronic device according to claim 14, wherein the carrier film comprises oriented polypropylene (OPP: Oriented polypropylene). The insulating film for manufacturing an electronic device according to claim 14, wherein the cover film comprises a polyethylene terephthalate (PET: Polyethylene terepthalate). The insulating film for manufacturing an electronic device according to any one of claims 1 to 16, wherein the insulating film for manufacturing an electronic device is used for a printed circuit board. The insulating film for manufacturing an electronic device of claim 17, wherein the printed circuit board is used for at least one of a mobile phone, a camera, a notebook computer, and a wearable device.

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