TW202216428A - 阻氣性薄膜及波長轉換薄片 - Google Patents
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- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
本發明之一態樣的阻氣性薄膜係具有依序積層有基材、第1AlO
x蒸鍍層、阻氣性中間層、第2AlO
x蒸鍍層、阻氣性覆蓋層而成的構造,第1AlO
x蒸鍍層及第2AlO
x蒸鍍層的厚度均為15nm以下,阻氣性中間層及阻氣性覆蓋層的厚度均為200~400nm,阻氣性覆蓋層之依奈米壓痕法所測定之複合彈性係數在測定溫度25℃下為7~11GPa,在測定溫度60℃下為5~8GPa。
Description
本發明係關於阻氣性薄膜及波長轉換薄片。
就有機EL顯示器和使用量子點之QD液晶顯示器等之顯示裝置、及太陽能電池等而言,為了要防止因水蒸氣和氧氣等所導致之品質劣化,會使用阻氣性薄膜(參照專利文獻1~3)。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2016-6789號公報
[專利文獻2]日本特開2010-272761號公報
[專利文獻3]日本特開2018-13724號公報
[發明欲解決之課題]
對於在上述用途上所使用之阻氣性薄膜,不僅僅是阻氣性,還會要求透明性。例如,就QD液晶顯示器來說,在用來將藍色LED轉換成白色的波長轉換層可使用量子點(QD),但因量子點容易劣化,所以會以覆蓋波長轉換層之兩面的方式來積層阻氣性薄膜。此時,由於因阻氣性薄膜之透明性,尤其是黃色色調的強弱而轉換之發光顏色會改變,所以會對阻氣性薄膜要求減少黃色色調。再者,基於透明性之提升及色斑之抑制等的觀點,會對在上述用途上所使用之阻氣性薄膜要求抑制皺紋而使外觀良好。
本發明係有鑑於上述情況而完成的,其目的在於提供一種水蒸氣阻隔性優異、黃色色調減少、可抑制住皺紋之阻氣性薄膜、及使用其之波長轉換薄片。
[用以解決課題之手段]
為了達成上述目的,本發明係提供一種阻氣性薄膜,其係具有依序積層有基材、第1AlO
x蒸鍍層、阻氣性中間層、第2AlO
x蒸鍍層、阻氣性覆蓋層而成的構造,該第1AlO
x蒸鍍層及該第2AlO
x蒸鍍層的厚度均為15nm以下,該阻氣性中間層及該阻氣性覆蓋層的厚度均為200~400nm,該阻氣性覆蓋層之依奈米壓痕法所測定之複合彈性係數在測定溫度25℃下為7~11GPa,在測定溫度60℃下為5~8GPa。
如根據上述阻氣性薄膜,係因具有上述積層構造,各層厚度為上述範圍內,且阻氣性覆蓋層滿足上述複合彈性係數之條件,而可獲得優異的氧氣/水蒸氣阻隔性,同時能夠減少黃色色調,抑制皺紋的發生。又,藉由將第1及第2之AlO
x蒸鍍層的厚度設為15nm以下,且將阻氣性中間層及阻氣性覆蓋層的厚度設為200~400nm,尤其是藉由影響波長轉換薄片之轉換效率上較大的藍色LED之波長區域(300~400nm),則可以減少在阻氣性中間層及阻氣性覆蓋層與第1及第2之AlO
x蒸鍍層之界面的反射及干涉。再者,藉由分別分割並設置第1AlO
x蒸鍍層與第2AlO
x蒸鍍層、及阻氣性中間層與阻氣性覆蓋層,則能夠使各層厚度變薄,抑制皺紋及龜裂的發生,同時因為可以確保賦予阻氣性之層的總厚度,而能夠獲得良好的阻氣性。又,藉由將阻氣性覆蓋層之複合彈性係數設在上述範圍內,則可以兼具相對於氧/水蒸氣之阻隔性與透過熱處理等而基材變形時之變形耐性。
就上述阻氣性薄膜來說,較佳的是上述阻氣性覆蓋層之依奈米壓痕法所測定之硬度在測定溫度25℃下為1.15~1.70GPa,在測定溫度60℃下為0.85~1.30GPa。藉由阻氣性覆蓋層滿足上述硬度條件,則能夠獲得更為優異之氧/水蒸氣阻隔性,同時可更為減少黃色色調,進一步抑制皺紋的發生。
就上述阻氣性薄膜來說,上述基材係以上述第1AlO
x蒸鍍層側之表面經電漿處理為佳。藉由使用上述第1AlO
x蒸鍍層側之表面經電漿處理之基材,則可使基材與第1AlO
x蒸鍍層之密接性提升,能夠抑制該等之層間的剝離(delamination)。又,藉由使用第1AlO
x蒸鍍層側之表面經電漿處理過的基材,則不用形成如錨塗層等之用以提升密接性的層,且由於可透過電漿處理來使層間之密接性提升,故相較於有設置錨塗層等的情形,更可以使透光性提升。
就上述阻氣性薄膜來說,較佳的是上述阻氣性覆蓋層係使用含有選自包含含羥基之高分子化合物、金屬烷氧化物、矽烷偶合劑、及該等之水解物之群組的至少1種之阻氣性覆蓋層形成用組成物而形成的層。藉由阻氣性覆蓋層形成用組成物含有上述成分,則可輕易地將阻氣性覆蓋層之複合彈性係數及硬度控制在上述範圍內,同時能夠獲得更優異的氧/水蒸氣阻隔性。另外,在上述成分之中,於合併使用含羥基之高分子化合物與金屬烷氧化物之水解物的情形下,會在含羥基之高分子化合物之羥基與金屬烷氧化物之水解物之羥基之間形成有強力氫鍵,而顯現出更高的阻氣性。
本發明係提供一種波長轉換薄片,其係具備螢光體層、在該螢光體層之至少一面上所配置之本發明之阻氣性薄膜。
[發明之效果]
如根據本發明,則可提供水蒸氣阻隔性優異、可減少黃色色調、能抑制皺紋發生的阻氣性薄膜、及使用其之波長轉換薄片。
[用以實施發明的形態]
以下,針對本發明之實施形態,參照圖面進行詳細說明。另外,在圖面中,會賦予相同的元件符號於相同或同等之元件,省略重複說明。
[阻氣性薄膜]
圖1係顯示出本發明之阻氣性薄膜之一實施形態的概略剖面圖。本實施形態之阻氣性薄膜100係具備有基材11、設置在基材11上之第1AlO
x蒸鍍層13、設置在第1AlO
x蒸鍍層13上之阻氣性中間層14、設置在阻氣性中間層14上之第2AlO
x蒸鍍層23、設置在第2AlO
x蒸鍍層23上之阻氣性覆蓋層24。阻氣性薄膜100係具備有:由第1AlO
x蒸鍍層13及阻氣性中間層14所構成之第1阻隔層15;與由第2AlO
x蒸鍍層23及阻氣性覆蓋層24所構成之第2阻隔層25。
(基材11)
基材11係宜為高分子薄膜。作為高分子薄膜的材質,例如可列舉有:聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯及聚萘二甲酸乙二酯等之聚酯;尼龍等之聚醯胺;聚丙烯及環烯烴等之聚烯烴;聚碳酸酯;及三乙醯基纖維素等,但並未限定於此等。高分子薄膜係宜為聚酯薄膜、聚醯胺薄膜或聚烯烴薄膜,較佳為聚酯薄膜或聚醯胺薄膜,更佳為聚對苯二甲酸乙二酯薄膜。聚對苯二甲酸乙二酯薄膜係基於透明性、加工適性及密接性的觀點而為較佳。又,聚對苯二甲酸乙二酯薄膜係基於透明性及阻氣性的觀點,較佳為雙軸延伸聚對苯二甲酸乙二酯薄膜。
基材11係因應需要而也可以包含抗靜電劑、紫外線吸收劑、塑化劑及滑劑等之添加劑。又,在基材11之第1AlO
x蒸鍍層13側的表面11a上,也可設置錨塗層。錨塗層係例如可使用從聚酯樹脂、異氰酸酯樹脂、胺基甲酸酯樹脂、丙烯酸樹脂、聚乙烯醇樹脂、伸乙基乙烯醇樹脂、乙烯基改質樹脂、環氧樹脂、含噁唑啉基之樹脂、改質聚苯乙烯樹脂、改質矽酮樹脂或鈦酸烷酯等所選出之樹脂來形成。錨塗層係可以單獨使用上述樹脂來形成,或者是使用組合2種以上上述樹脂之複合樹脂來形成。錨塗層厚度例如為0.001μm以上2μm以下。尤其是在基材11成膜時,透過在生產線上形成錨塗層,作成經延伸過之附有錨塗層(易接著層)之基材薄膜,能夠將錨塗層厚度弄到非常薄(例如,0.02μm以下),所以可以減少在錨塗層的能量損失。
又,基材11之第1AlO
x蒸鍍層13側的表面11a係可經施以電暈處理、火焰處理及電漿處理等之表面處理。尤其是藉由在經表面處理過之面上直接設置第1AlO
x蒸鍍層13,則在相較於設置有錨塗層等的情形之下,由於在錨塗層等之能量損失不會消失,所以能夠提升透光性。作為電漿處理,較佳的是以下之反應性離子蝕刻處理。
基材11係其表面11a也可具備有透過反應性離子蝕刻(以下,亦稱為「RIE」)處理而形成的改質處理層。改質處理層係指基材11表面附近成為經由RIE處理而改質成層狀之態樣的部位。
電漿可利用於RIE處理上。藉由在電漿中所發生之自由基和離子,能夠獲得將官能基賦予至基材11表面的化學效果。又,還可以獲得經由離子蝕刻而去除表面雜質,同時增加表面粗糙度之物理性效果。因此,藉由因RIE處理而上述化學效果及上述物理性效果顯現出的改質處理層,則基材11與第1AlO
x蒸鍍層13之間的密接性提升,即便在高溫高濕環境下,基材11與第1AlO
x蒸鍍層13之間的剝離變得難以產生。
對於基材11之RIE處理係作為RIE方式之電漿處理裝置,可使用公知裝置來加以實施。作為該電漿處理裝置,較佳的是捲取式之生產線上電漿處理裝置。作為捲取式之生產線上電漿處理裝置,可使用平面型電漿處理裝置、中空陽極型電漿處理裝置等。
基材11厚度並未特別限制,較佳為3μm以上100μm以下,更佳為5μm以上50μm以下。當此厚度為3μm以上,則加工容易,當為100μm以下,則可以將阻氣性薄膜的總厚度予以薄化。
(第1AlO
x蒸鍍層13及第2AlO
x蒸鍍層23)
在本實施形態中,第1AlO
x蒸鍍層13係藉由蒸鍍而形成在基材11上。又,第2AlO
x蒸鍍層23係藉由蒸鍍而形成在阻氣性中間層14上。第1AlO
x蒸鍍層13及第2AlO
x蒸鍍層23係包含AlO
x(氧化鋁)之層。AlO
x係因為透明性高,容易減少黃色色調而屬較佳。於此,基於容易獲得良好的阻氣性,且容易減少黃色色調的觀點,x之值係以0.01~2.00為較佳,以1.00~1.90為更佳。第1AlO
x蒸鍍層13及第2AlO
x蒸鍍層23係可為相同構成,也可為不同構成。
作為形成第1AlO
x蒸鍍層13及第2AlO
x蒸鍍層23之際的蒸鍍法,例如可以採用電阻加熱式真空蒸鍍法、EB(Electron Beam)加熱式真空蒸鍍法、誘導加熱式真空蒸鍍法等。
第1AlO
x蒸鍍層13及第2AlO
x蒸鍍層23的膜厚均為15nm以下,較佳為13nm以下。藉由將此膜厚設為上述上限值以下,則可使阻氣性薄膜之透明性提升,能夠減少黃色色調。另一方面,第1AlO
x蒸鍍層13及第2AlO
x蒸鍍層23的膜厚均為5nm以上,較佳為8nm以上。藉由將此膜厚設為上述下限值以上,則可以獲得更為良好的阻氣性。
(阻氣性中間層14及阻氣性覆蓋層24)
在本實施形態中,阻氣性中間層14及阻氣性覆蓋層24係為了要防止後面步驟中之各種二次性損害,同時賦予較高的阻氣性而設置的。阻氣性中間層14及阻氣性覆蓋層24係可為相同構成,也可為不同的構成。
阻氣性中間層14及阻氣性覆蓋層24係宜為使用含有從包含含羥基之高分子化合物、金屬烷氧化物、矽烷偶合劑、及該等之水解物之群組所選出之至少1種的組成物所形成之層。該具有構成之阻氣性中間層14及阻氣性覆蓋層24係使用以包含從包含含羥基之高分子化合物、金屬烷氧化物、矽烷偶合劑、及該等之水解物之群組所選出之至少1種的水溶液或水/醇混合溶液為主劑之組成物(以下,亦稱為塗敷劑)而形成。基於更進一步提升阻氣性的觀點,塗敷劑宜含有至少矽烷偶合劑或其水解物,較佳為含有從包含含羥基之高分子化合物、金屬烷氧化物及該等之水解物之群組所選出之至少1種與矽烷偶合劑或其水解物,更佳為含有:含羥基之高分子化合物或其水解物;金屬烷氧化物或其水解物;及矽烷偶合劑或其水解物。塗敷劑係例如能夠在以水系(水或水/醇混合)溶媒使為水溶性高分子之含羥基之高分子化合物溶解的溶液中,直接將金屬烷氧化物與矽烷偶合劑予以混合而製備或將預先進行水解等的處理的金屬烷氧化物與矽烷偶合劑予以混合而製備。
針對用以形成阻氣性中間層14及阻氣性覆蓋層24之塗敷劑中所含之各成分進行詳細說明。作為使用在塗敷劑之含羥基之高分子化合物,可列舉有聚乙烯醇、聚乙烯吡咯啶酮、澱粉、甲基纖維素、羧基甲基纖維素、海藻酸鈉等。該等之中,在將聚乙烯醇(以下,簡稱為PVA)使用於阻氣性中間層14及阻氣性覆蓋層24之塗敷劑時,因為阻氣性特別優異而較佳。
阻氣性中間層14及阻氣性覆蓋層24係基於可以獲得優異阻氣性的觀點,較佳的是從包含由包含下述通式(1)所示之金屬烷氧化物及其水解物的群組所選出之至少1種的組成物而形成。
M(OR
1)
m(R
2)
n-m…(1)
上述通式(1)中,R
1及R
2係分別獨立而為碳數1~8之1價有機基,較佳為甲基、乙基等之烷基。M係表示Si、Ti、Al、Zr等之n價金屬原子。m為1~n之整數。另外,在R
1或R
2多數存在的情形下,R
1彼此或R
2彼此可為相同或不同。
作為金屬烷氧化物,具體來說,可列舉有四乙氧基矽烷[Si(OC
2H
5)
4]、三異丙氧基鋁[Al(O-2’-C
3H
7)
3]等。四乙氧基矽烷及三異丙氧基鋁係以水解後,在水系溶媒中相對安定為佳。
作為矽烷偶合劑,可列舉有下述通式(2)所示之化合物。藉由使用下述通式(2)所示之矽烷偶合劑,可使阻氣性薄膜之耐水性、耐熱性更為提升。
Si(OR
11)
p(R
12)
3-pR
13…(2)
上述通式(2)中,R
11表示甲基、乙基等之烷基,R
12表示烷基、烷氧基、芳基、烯基、以丙烯醯基所取代之烷基、或以甲基丙烯醯基所取代之基等之1價有機基,R
13表示1價有機官能基,p表示1~3之整數。另外,在R
11或R
12多數存在的情形下,R
11彼此或R
12彼此可為相同或不同。作為由R
13所示之1價有機官能基,可列舉有環氧丙氧基、環氧基、巰基、羥基、胺基、以鹵素原子所取代之烷基、或含有異氰酸酯基之1價有機官能基。
作為矽烷偶合劑,具體來說,可列舉有乙烯基三甲氧基矽烷、γ-氯丙基甲基二甲氧基矽烷、γ-氯丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基炳基甲基二乙氧基矽烷、3-環氧丙氧基炳基甲基三乙氧基矽烷、γ-甲基丙烯醯基炳基三甲氧基矽烷、γ-甲基丙烯醯基炳基甲基二甲氧基矽烷等之矽烷偶合劑等。
又,矽烷偶合劑係可為上述通式(2)所示之化合物經聚合過之多聚體。作為多聚體,宜為三聚體,更佳為1,3,5-參(3-三烷氧基矽基烷基)三聚異氰酸酯。此係3-異氰酸酯烷基烷氧基矽烷之縮聚體。該1,3,5-參(3-三烷氧基矽基烷基)三聚異氰酸酯已知是在聚異氰處的化學反應性消失,因酸酯處之極性而可確保住反應性。一般來說,與3-異氰酸酯烷基烷氧基矽烷同樣地可添加於接著劑等,以接著性提升劑而廣為人知。依此,藉由將1,3,5-參(3-三烷氧基矽基烷基)三聚異氰酸酯添加至含羥基之高分子化合物中,則能夠因為氫鍵而可使阻氣性中間層14及阻氣性覆蓋層24之耐水性提升。相對於3-異氰酸酯烷基烷氧基矽烷係反應性高、液體安定性低,1,3,5-參(3-三烷氧基矽基烷基)三聚異氰酸酯係酸酯處因為其極性而非為水溶性,但容易分散於水系溶液中,能夠安定地確保液體黏度。又,耐水性能係3-異氰酸酯烷基烷氧基矽烷與1,3,5-參(3-三烷氧基矽基烷基)三聚異氰酸酯同等。
1,3,5-參(3-三烷氧基矽基烷基)三聚異氰酸酯係也由3-異氰酸酯丙基烷氧基矽烷之熱縮合而製造,也有包含原料之3-異氰酸酯烷基烷氧基矽烷的情形,不會特別有問題。較佳的是1,3,5-參(3-三烷氧基矽基丙基)三聚異氰酸酯,更佳的是1,3,5-參(3-三甲氧基矽基丙基)三聚異氰酸酯。由於此甲氧基係水解速度快,且包含丙基者能以相對低價取得,所以1,3,5-參(3-三甲氧基矽基丙基)三聚異氰酸酯在實際使用上是有利的。
又,在不損害阻氣性的範圍,也可以因應需要而在塗敷劑中加入異氰酸酯化合物或分散劑、安定化劑、黏度調整劑等之公知添加劑。
用以形成阻氣性中間層14及阻氣性覆蓋層24之塗敷劑係例如可透過浸漬法、輥塗法、凹版塗敷法、反式凹版塗敷法、氣刀塗敷法、逗號式(comma)塗敷法、模塗法、網版印刷法、噴塗法、凹版水平法等來進行塗布。塗布此塗敷劑而成之塗膜係可透過熱風乾燥法、熱輥乾燥法、高頻照射法、紅外線照射法、UV照射法、或該等之組合來使之乾燥。
使上述塗膜乾燥時的溫度係例如可設為溫度50~150℃,較佳的是設為溫度70~100℃。藉由將乾燥時之溫度設為上述範圍內,則可進一步抑制龜裂發生在第1AlO
x蒸鍍層13及第2AlO
x蒸鍍層23、阻氣性中間層14及阻氣性覆蓋層24上,能夠顯現出優異的阻氣性。
阻氣性中間層14及阻氣性覆蓋層24的厚度係以硬化後之膜厚來計,均為200~400nm,較佳為230~380nm,更佳為250~350nm。藉由將該膜厚設為上述上限值以下,則可使阻氣性薄膜之透明性提升,能減少黃色色調,同時還可抑制皺紋發生在阻氣性中間層14及阻氣性覆蓋層24上。另一方面,藉由將此膜厚設為上述下限值以上,則可以獲得良好的阻氣性。
阻氣性中間層14與阻氣性覆蓋層24之合計厚度宜為400~800nm,較佳為450~600nm。又,阻氣性中間層14之厚度與阻氣性覆蓋層24之厚度也可不同。阻氣性中間層14厚度相對於阻氣性覆蓋層24厚度的比(阻氣性中間層14之厚度/阻氣性覆蓋層24之厚度)係宜為1.0~2.0,較佳為超過1.0且2.0以下,更佳為1.1~1.5。藉由將阻氣性覆蓋層24之厚度設為與阻氣性中間層14之厚度相同的厚度,或更薄,則更容易抑制皺紋的發生,且更容易使阻氣性覆蓋層24硬化。
在本實施形態中,阻氣性覆蓋層24係依奈米壓痕法所測定之複合彈性係數在測定溫度25℃下為7~11GPa,在測定溫度60℃下為5~8GPa。又,阻氣性覆蓋層24係依奈米壓痕法所測定之硬度在測定溫度25℃下為1.15~1.70GPa,在測定溫度60℃下為0.85~1.30GPa。阻氣性覆蓋層24之複合彈性係數及硬度係可依據上述塗敷劑之組成(尤其是矽烷偶合劑的量)、利用層形成時之加熱溫度來控制交聯密度等來加以調整。
在本說明書中,阻氣性覆蓋層24之上述複合彈性係數及硬度係表示依奈米壓痕法所計算出之複合彈性係數及硬度。所謂的奈米壓痕法係一種針對目標之測定對象施行準靜態按壓試驗,取得試料之機械特性的測定法。複合彈性係數及硬度係例如可由以下之裝置來加以測定。
測定裝置係使用安裝有作為轉換器之nanoDMA III轉換器(商品名)之Bruker Japan股份有限公司製之Hysitron TI-Premier(商品名)。壓頭係使用前端開啟角度142.3°之Berkovich型金剛石加熱用壓頭TI-0283(商品名)。測定溫度係使用Bruker Japan股份有限公司製之加熱平台xSo1400(商品名)來加以控制。溫度控制時之升溫速度設為20℃/分鐘,在加熱平台到達所期望之溫度之後,於保持10分鐘之後,實施測定。又,預先試驗成為標準試料的熔融石英,將接觸深度與接觸投影面積的關係予以校正。奈米壓痕法之測定條件係透過準靜態試驗依壓入速度30nm/秒鐘進行壓入至深度30nm為止之後,於最大深度保持1秒鐘之後,依30nm/秒鐘之速度進行負荷去除。藉由將去除負荷時之相對於最大負重之60~95%區域的去除負荷曲線之結果予以解析,依據Oliver-Pharr法計算出複合彈性係數及硬度。
阻氣性覆蓋層24之依奈米壓痕法所測定之複合彈性係數在測定溫度25℃下為7~11GPa,較佳為7.5~10.5GPa。又,阻氣性覆蓋層24之依奈米壓痕法所測定之複合彈性係數在測定溫度60℃下為5~8GPa,較佳為5.5~7.5GPa。藉由該複合彈性係數在上述上限值以下,則可以抑制皺紋發生在阻氣性覆蓋層24上,而藉由在上述下限值以上,則能夠獲得良好的阻氣性。
阻氣性覆蓋層24之依奈米壓痕法所測定之硬度在測定溫度25℃下宜為1.15~1.70GPa,較佳1.20~1.65GPa。又,阻氣性覆蓋層24之依奈米壓痕法所測定之硬度在測定溫度60℃下宜為0.85~1.30GPa,較佳0.90~1.30GPa。藉由該硬度在上述上限值以下,則可以進一步抑制皺紋發生在阻氣性覆蓋層24上,而藉由在上述下限值以上,則能夠獲得更為良好的阻氣性。
以上,針對本發明之阻氣性薄膜之一較佳實施形態進行說明,但是本發明之阻氣性薄膜並未限定於上述實施形態。阻氣性薄膜係可以在基材11與第1AlO
x蒸鍍層13之間、第1AlO
x蒸鍍層13與阻氣性中間層14之間、阻氣性中間層14與第2AlO
x蒸鍍層23之間及第2AlO
x蒸鍍層23與阻氣性覆蓋層24之間的其中之一具備有其他層,也可以不具備其他層。在不具備其他層時,上述各層分別鄰接。又,阻氣性薄膜係除了第1阻隔層15及第2阻隔層25之外,還可以具備有其他阻隔層。但是當阻隔層之積層數增加時,透明性容易降低,同時會隨著層形成時之加熱次數的增加而變得容易在阻氣性薄膜上發生皺紋、捲曲。因此,阻氣性薄膜係以僅具備第1阻隔層15及第2阻隔層25作為阻隔層為佳。又,阻氣性薄膜係能夠進一步具備以下之消光層。
(消光層)
消光層係因為可使1個以上之光學性功能、抗靜電功能發揮,而設置在阻氣性薄膜的最外層表面上。例如,在波長轉換薄片上,阻氣性薄膜使用在用以保護螢光體層時,消光層係設置在阻氣性薄膜之與螢光體層側相反之側的表面上。於此,作為光學性功能,並未特別限定,可列舉有干涉紋(莫爾條紋)防止功能、抗反射功能、擴散功能等。該等之中,消光層係以至少具有干涉紋防止功能作為光學性功能為佳。在本實施形態中,針對消光層至少具有干涉紋防止功能的情形進行說明。
消光層係可包含黏合劑樹脂與微粒子而構成。然後,能夠以微粒子的一部分從消光層表面露出的方式,微粒子包埋在黏合劑樹脂中,藉以在消光層表面上產生細微的凹凸。藉由將此類消光層設置在阻氣性薄膜表面上,則可更為充分地防止牛頓環等干涉紋的發生,其結果係可以獲得高效率且高精密、長壽的波長轉換薄片。
作為黏合劑樹脂,並未特別限定,可使用光學透明性優異的樹脂。更具體來說,例如能夠使用聚酯系樹脂、丙烯酸系樹脂、丙烯酸胺基甲酸酯系樹脂、聚酯丙烯酸酯系樹脂、聚胺基甲酸酯丙烯酸酯系樹脂、胺基甲酸酯系樹脂、環氧系樹脂、聚碳酸酯系樹脂、聚醯胺系樹脂、聚醯亞胺系樹脂、三聚氰胺系樹脂、苯酚系樹脂等之熱塑性樹脂、熱固性樹脂、電離放射線硬化性樹脂等。又,有機樹脂以外,也可以使用矽石黏合劑。該等之中,基於材料之寬廣範圍的觀點,較佳的是使用丙烯酸系樹脂、胺基甲酸酯系樹脂,基於耐光性、光學特性優異的觀點,更佳的是使用丙烯酸系樹脂。該等係不僅是只使用1種,也可組合多種來使用。
作為微粒子,並未特別限定,例如除了可使用矽石、黏土、滑石、碳酸鈣、硫酸鈣、硫酸鋇、氧化鈦、氧化鋁等之無機微粒子之外,還可使用苯乙烯樹脂、胺基甲酸酯樹脂、矽酮樹脂、丙烯酸樹脂、聚醯胺樹脂等之有機微粒子。該等之中,作為微粒子,可使用矽石、丙烯酸樹脂、胺基甲酸酯樹脂、聚醯胺樹脂等之折射率1.40~1.55的微粒子,基於穿透率來說,較佳。折射率低,則微粒子高價,反之,折射率過高的微粒子,則有損害到穿透率的傾向。該等係不僅是只使用1種,也可組合多種來使用。
微粒子之平均粒徑宜為0.1~30μm,較佳為0.5~10μm。當微粒子之平均粒徑為0.1μm以上時,會有能夠獲得優異的干涉紋防止功能的傾向,而當為30μm以下時,會有透明性更加提升的傾向。
消光層中之微粒子含量係以消光層總量為基準,較佳為0.5~30質量%,更佳為3~10質量%。當微粒子含量為0.5質量%以上時,會有光擴散功能與防止干涉紋發生的效果更加提升的傾向,而當為30質量%以下時,不會有降低亮度的情形。
消光層係可利用含有上述之黏合劑樹脂及微粒子之塗布液來塗布,並經使乾燥硬化而形成。作為塗布方法,可列舉有依據凹版塗布、浸漬塗布、反式塗布、線棒塗布、及模式塗布等的塗布方法。
消光層厚度宜為0.1~20μm,較佳為0.3~10μm。藉由消光層厚度為0.1μm以上,則有可較容易地獲得均勻的膜,變得夠容易獲得光學性功能的傾向。另一方面,藉由消光層厚度為20μm以下,則在消光層中使用微粒子時,微粒子會朝向消光層表面露出,而有變得容易獲得凹凸賦予效果的傾向。
具有以上所說明之構成的本實施形態之阻氣性薄膜係能夠使用在需要與氧、水蒸氣之穿透有關的阻隔性之用途上。本實施形態之阻氣性薄膜係例如在食品、及醫藥等之包裝材料、使用量子點之QD液晶顯示器等之液晶顯示器的背光用波長轉換薄片、有機電致發光(有機EL)顯示器之密封構件、有機EL照明之波長轉換薄片、及太陽能電池之保護薄片等方面上是有用的,尤其是適於使用在液晶顯示器之背光用波長轉換薄片上。
[波長轉換薄片]
圖2係顯示出本發明之波長轉換薄片之一實施形態的概略剖面圖。圖2中所顯示之波長轉換薄片係包含量子點等之螢光體,例如,在LED波長轉換用途上,可使用在背光單元上。
圖2所示波長轉換薄片200係具備有包含螢光體之螢光體層(波長轉換層)7、在螢光體層7之一面7a側及另一面7b側上所分別設置之阻氣性薄膜100、100而概略地構成。藉此,會成為螢光體層7包埋(亦即,密封)至阻氣性薄膜100、100之間的構造。其中,在螢光體層7上,由於需要賦予阻氣性,所以較佳的是作成以一對阻氣性薄膜100、100來夾住螢光體層7之構成。以下,針對構成波長轉換薄片200之各層進行詳細地說明。
(阻氣性薄膜)
作為阻氣性薄膜100、100,可使用圖1所示之阻氣性薄膜100。在波長轉換薄片200上,螢光體層7之一面7a側上所配置之阻氣性薄膜100與另一面7b側上所配置之阻氣性薄膜100係可為相同,也可以不同。
阻氣性博膜100、100係如圖2所示般,阻氣性覆蓋層24可以配置成與螢光體層7相對向,基材11可以配置成與螢光體層7相對向。基於進一步抑制氧及水蒸氣所導致之螢光體層7劣化的觀點,阻氣性薄膜100、100係以阻氣性覆蓋層24配置成與螢光體層7相對向為佳。阻氣性覆蓋層24與螢光體層7可以直接鄰接。又,為了提升阻氣性覆蓋層24與螢光體層7之密接性,也能夠在阻氣性覆蓋層24上設置底漆層。阻氣性薄膜100係可以當作以接著劑與其他薄膜(例如,聚對苯二甲酸乙二酯)貼合而成之層合薄膜來使用。又,阻氣性薄膜100係可以積層2層以上而使用。
(螢光體層)
螢光體層7係包含密封樹脂9及螢光體8之厚度為數十~數百μm之薄膜。作為密封樹脂9,例如可使用感光性樹脂或熱固性樹脂。在密封樹脂9內部,能以混合有1種以上之螢光體8的狀態而密封。密封樹脂9係在積層螢光體層7與一對阻氣性薄膜100、100時,發揮了將該等接合,同時填補該等之空隙的作用。又,螢光體層7係可為僅密封有1種螢光體8之螢光體層積層有2層以上者。該等1層或2層以上之螢光體層上所使用之2種以上的螢光體8係可以選擇激發波長相同者。此激發波長係根據LED光源所照射之光的波長而選擇的。2種以上之螢光體8的螢光色係相互不同。作為LED光源,使用藍色LED(波峰波長450nm),而在使用2種螢光體8時,各個螢光色宜為紅色、綠色。各個螢光之波長、及LED光源所照射之光的波長係可根據濾光器之分光特性來加以選擇。螢光之波峰波長係例如紅色為650nm,綠色為550nm。
接著,說明螢光體8之粒子構造。作為螢光體8,較佳的是使用色純度高、可期待亮度提升之量子點。作為量子點,例如可列舉有作為保護膜之殼包覆住作為發光部之芯者。作為上述芯,例如可列舉有硒化鎘(CdSe)等,作為上述殼,例如可列舉有硫化鋅(ZnS)等。藉由以能隙大的ZnS來覆蓋住CdSe粒子表面缺陷,則量子效率提升。又,螢光體8係宜為芯由第1殼及第2殼而雙重覆蓋住者。此時,能夠在芯上使用CdSe,在第1殼上使用硒化鋅(ZnSe),在第2殼上使用ZnS。另外,作為量子點以外之螢光體8,也可以使用YAG:Ce等。
上述螢光體8之平均粒徑宜為1~20nm。又,螢光體層7厚度宜為1~500μm。
螢光體層7中之螢光體8含量係以螢光體層7總量為基準,較佳為1~20質量%,更佳為3~10質量%。
作為密封樹脂9,例如可使用熱塑性樹脂、熱固性樹脂、及紫外線硬化型樹脂等。該等之樹脂係可單獨使用1種或組合使用2種以上。
作為熱塑性樹脂,例如可使用乙醯基纖維素、硝基纖維素、乙醯基丁基纖維素、乙基纖維素及甲基纖維素等之纖維素衍生物;乙酸乙烯酯與其共聚物、氯乙烯與其共聚物、及聚二氯亞乙烯與其共聚物等之乙烯基系樹脂;聚乙烯甲醛及聚乙烯丁醛等之縮醛樹脂;丙烯酸樹脂與其共聚物、甲基丙烯酸樹脂與其共聚物等之丙烯酸系樹脂;聚苯乙烯樹脂;聚醯胺樹脂;線狀聚酯樹脂;氟樹脂;及聚碳酸酯樹脂等。
作為熱固性樹脂,可列舉有苯酚樹脂、尿素三聚氰胺樹脂、聚酯樹脂、及矽酮樹脂等。
作為紫外線硬化型樹脂,可列舉有環氧丙烯酸酯、胺基甲酸酯丙烯酸酯、及聚酯丙烯酸酯等之光聚合性預聚物。又,還能夠使用以該等光聚合性預聚物為主要成分,作為稀釋劑之單官能或多官能之單體。
[實施例]
以下,列舉實施例來具體說明本發明,但是本發明並未限定於該等。
[實施例1~6及比較例1~6]
<阻氣性薄膜之製作>
首先,準備好作為基材的厚度12μm之雙軸延伸聚對苯二甲酸乙二酯薄膜。針對基材之一面,使用平板型電漿處理裝置,以RIE處理來將改質處理層形成於基材上。接著,在改質處理層上形成第1AlO
x蒸鍍層。第1AlO
x蒸鍍層係藉由在改質處理層上真空蒸鍍氧化鋁而形成。具體來說,使用電子射線加熱方式之真空蒸鍍裝置,將氧氣導入至該裝置,使金屬鋁蒸發。藉此,形成既定膜厚之第1AlO
x蒸鍍層。接下來,依序形成阻氣性中間層、第2AlO
x蒸鍍層、阻氣性覆蓋層。第2AlO
x蒸鍍層係依與第1AlO
x蒸鍍層相同的方法而形成。作為阻氣性中間層及阻氣性覆蓋層,可因應各個實施例及比較例而使用以下之塗敷A及B。透過以上的方法,獲得具有依序積層有基材/第1AlO
x蒸鍍層/阻氣性中間層/第2AlO
x蒸鍍層/阻氣性覆蓋層之構造的阻氣性薄膜。
(塗敷A)
藉由凹版塗布法將以成為A液/B液/C液=70/20/10(固體成分質量比)的方式而混合有以下所示之A液、B液及C液的溶液進行塗布並乾燥,形成既定厚度之阻氣性中間層或阻氣性覆蓋層。
(塗敷B)
藉由凹版塗布法將以成為A液/B液=70/30(固體成分質量比)的方式而混合有以下所示之A液及B液的溶液進行塗布並乾燥,形成既定厚度之阻氣性中間層或阻氣性覆蓋層。
A液:在四乙氧基矽烷17.9g與甲醇10g中加入0.1N鹽酸72.1g,攪拌30分鐘而水解之固體成分5質量%(SiO
2換算)的水解溶液。
B液:含有聚乙烯醇5質量%之水/甲醇=95/5(質量比)水溶液。
C液:以水/異丙醇之混合液(水:異丙醇之質量比為1:1)將1,3,5-參(3-三烷氧基矽基丙基)三聚異氰酸酯稀釋成固體成分5質量%之水解溶液。
[實施例7]
作為基材,使用在厚度12μm之雙軸延伸聚對苯二甲酸乙二酯薄膜之積層有阻隔層之側的表面上積層有包含脂肪族聚胺基甲酸酯樹脂之厚度0.005μm之錨塗層的構成之基材。並未施行RIE處理,除此之外,與實施例1同樣地進行操作,獲得阻氣性薄膜。
將在各個實施例及比較例所使用之塗敷種類、阻氣性中間層及阻氣性覆蓋層形成時之乾燥溫度及時間、第1及第2之AlO
x蒸鍍層(表中,將該等統整記載為「蒸鍍層」)之厚度、及阻氣性中間層及阻氣性覆蓋層(表中,將該等統整記載為「塗敷層」)之厚度示於表1中。另外,阻氣性中間層及阻氣性覆蓋層之加熱乾燥係將熱標籤(heatlabel,Micron公司製)貼在乾燥前之塗膜表面上,乾燥後,經確認溫度,以成為任意溫度的方式,且以成為任意乾燥時間的方式,調整烤箱溫度及生產線速度而進行。表1所示乾燥溫度係上述之熱標籤之溫度。
[表1]
塗敷種類 | 乾燥溫度 (℃) | 乾燥時間 (秒鐘) | 厚度(nm) | ||
蒸鍍層 | 塗敷層 | ||||
實施例1 | A | 80 | 4 | 8 | 230 |
實施例2 | A | 80 | 4 | 5 | 230 |
實施例3 | A | 80 | 4 | 13 | 230 |
實施例4 | A | 80 | 4 | 8 | 380 |
實施例5 | A | 65 | 4 | 8 | 230 |
實施例6 | A | 95 | 5 | 8 | 230 |
實施例7 | A | 80 | 4 | 8 | 230 |
比較例1 | A | 60 | 3.5 | 8 | 230 |
比較例2 | A | 80 | 4 | 8 | 405 |
比較例3 | A | 80 | 4 | 9 | 180 |
比較例4 | A | 115 | 5 | 8 | 230 |
比較例5 | A | 80 | 4 | 18 | 230 |
比較例6 | B | 80 | 4 | 8 | 230 |
<複合彈性係數及硬度之測定>
針對以實施例及比較例所得到之阻氣性薄膜,依以下方法測定阻氣性覆蓋層之複合彈性係數及硬度。測定裝置係使用安裝有作為轉換器之nanoDMA III轉換器(商品名)之Bruker Japan股份有限公司製之Hysitron TI-Premier(商品名)。壓頭係使用前端開啟角度142.3°之Berkovich型金剛石加熱用壓頭TI-0283(商品名)。測定溫度係使用Bruker Japan股份有限公司製之加熱平台xSo1400(商品名)來加以控制。溫度控制時之升溫速度設為20℃/分鐘,在加熱平台到達所期望之溫度之後,於保持10分鐘之後,實施測定。又,預先試驗成為標準試料的熔融石英,將接觸深度與接觸投影面積的關係予以校正。奈米壓痕法之測定條件係透過準靜態試驗依壓入速度30nm/秒鐘進行壓入至深度30nm為止之後,於最大深度保持1秒鐘之後,依30nm/秒鐘之速度進行負荷去除。藉由將去除負荷時之相對於最大負重之60~95%區域的去除負荷曲線之結果予以解析,依據Oliver-Pharr法計算出複合彈性係數及硬度。將該等結果示於表2中。
<b*之測定>
使用測色計(SUGA試驗機股份有限公司製,商品名:Colour Cute i),以測定條件:C光2度視野來測定在實施例及比較例所得到之阻氣性薄膜之L*a*b*表色系中的色座標b*。如b*在0.5以下,則判斷可以減少黃色色調。將結果示於表2中。
<水蒸氣穿透度(WVTR)之測定>
實施例及比較例所得到之阻氣性薄膜的水蒸氣穿透度係依以下方法進行測定。首先,製作利用丙烯酸胺基甲酸酯樹脂接著劑將25μm聚對苯二甲酸乙二酯薄膜與實施例及比較例所得到之阻氣性薄膜的阻氣性覆蓋層面予以貼合而成的層合薄膜。使用水蒸氣穿透度測定裝置(MOCON公司製,商品名:PERMATRAN-W 3/34),並以溫度40℃、相對溼度90%的條件測定該層合薄膜之水蒸氣穿透度。測定係針對初期的層合薄膜與經溫度60℃、相對溼度90%下保存1000小時之後的層合薄膜來加以進行。測定方法係依據JIS K-7126,B法(等壓法),測定值係以單位[g/m
2/day]來加以記載。另外,進行3次相同的測定,採用其平均值。將結果示於表2中。
<外觀評價>
針對在實施例及比較例中所得到之阻氣性薄膜,以目視來觀察阻氣性覆蓋層表面,根據以下評價基準來評價外觀。將結果示於表2。
A:幾乎沒有皺紋,乾乾淨淨
B:有些許皺紋,稍微顯眼
C:大量明顯的皺紋,不佳
[表2]
複合彈性係數 (GPa) | 硬度(GPa) | b *(%) | WVTR (g/m 2/day) | 外觀 | ||||
25℃ | 60℃ | 25℃ | 60℃ | 0h | 1000h | |||
實施例1 | 8.5 | 5.8 | 1.25 | 0.95 | -0.1 | 0.06 | 0.7 | A |
實施例2 | 8.5 | 5.7 | 1.26 | 0.94 | -0.4 | 0.06 | 0.9 | A |
實施例3 | 8.2 | 5.5 | 1.23 | 0.90 | 0.1 | 0.05 | 0.4 | A |
實施例4 | 8.6 | 5.7 | 1.30 | 0.98 | 0.3 | 0.05 | 0.4 | B |
實施例5 | 7.3 | 5.2 | 1.17 | 0.86 | -0.6 | 0.07 | 0.9 | A |
實施例6 | 10.7 | 7.8 | 1.65 | 1.28 | -0.1 | 0.04 | 0.7 | B |
實施例7 | 8.5 | 5.8 | 1.25 | 0.95 | 0.0 | 0.08 | 0.9 | A |
比較例1 | 6.5 | 4.8 | 1.13 | 0.83 | -0.5 | 0.13 | 1.5 | A |
比較例2 | 9.1 | 6.2 | 1.35 | 0.99 | 0.8 | 0.07 | 0.4 | C |
比較例3 | 8.2 | 5.5 | 1.22 | 0.90 | 0.1 | 0.10 | 1.5 | A |
比較例4 | 11.5 | 8.5 | 1.72 | 1.33 | -0.1 | 0.04 | 0.6 | C |
比較例5 | 8.5 | 5.8 | 1.25 | 0.95 | 0.6 | 0.04 | 0.4 | A |
比較例6 | 6.7 | 4.8 | 0.75 | 0.58 | 0.0 | 0.03 | 5.1 | A |
7:螢光體層
8:螢光體
9:密封樹脂
11:基材
13:第1AlO
x蒸鍍層
14:阻氣性中間層
15:第1阻隔層
23:第2AlO
x蒸鍍層
24:阻氣性覆蓋層
25:第2阻隔層
100:阻氣性薄膜
200:波長轉換薄片
圖1係顯示出阻氣性薄膜之一實施形態的概略剖面圖。
圖2係顯示出波長轉換薄片之一實施形態的概略剖面圖。
無。
Claims (5)
- 一種阻氣性薄膜,其係具有依序積層有基材、第1AlO x蒸鍍層、阻氣性中間層、第2AlO x蒸鍍層、阻氣性覆蓋層而成的構造, 該第1AlO x蒸鍍層及該第2AlO x蒸鍍層的厚度均為15nm以下, 該阻氣性中間層及該阻氣性覆蓋層的厚度均為200~400nm, 該阻氣性覆蓋層之依奈米壓痕法所測定之複合彈性係數在測定溫度25℃下為7~11GPa,在測定溫度60℃下為5~8GPa。
- 如請求項1之阻氣性薄膜,其中該阻氣性覆蓋層之依奈米壓痕法所測定之硬度在測定溫度25℃下為1.15~1.70GPa,在測定溫度60℃下為0.85~1.30GPa。
- 如請求項1或2之阻氣性薄膜,其中該基材係該第1AlO x蒸鍍層側之表面經電漿處理過。
- 如請求項1至3中任一項之阻氣性薄膜,其中該阻氣性覆蓋層係使用含有從包含含羥基之高分子化合物、金屬烷氧化物、矽烷偶合劑、及該等之水解物之群組所選出之至少1種的阻氣性覆蓋層形成用組成物所形成之層。
- 一種波長轉換薄片,其係具備:螢光體層、與在該螢光體層之至少一面上所配置之如請求項1至4中任一項之阻氣性薄膜。
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