TW202213623A - 用於加工晶圓之裝置及方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 235000012431 wafers Nutrition 0.000 claims description 172
- 239000000919 ceramic Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005137 deposition process Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000013011 mating Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
本申請案係關於用於加工晶圓之裝置及方法。在本申請案之一實施例中,一種用於加工晶圓之裝置包含:加熱器,其包含基座,上述基座之頂部包含環形邊台及相對於上述環形邊台下凹以容置晶圓之晶圓載盤;側環,其包含外側部分及頂部,上述外側部分環繞上述基座之外側壁,上述頂部覆蓋上述環形邊台之外側部分且包含向心傾斜面;以及影子環,其底部包含與上述側環之上述頂部之上述向心傾斜面匹配的傾斜面。
Description
本發明係關於半導體晶圓處理領域,尤其係半導體處理腔體中之一種遮擋裝置,其在處理過程中係用於防止晶圓周圍之沈積。
半導體製程可包含沈積處理,例如化學氣相沈積(CVD)及電漿增強化學氣相沈積(PECVD)等,用以在晶圓或基材上形成各種薄膜以製備半導體裝置,例如積體電路及半導體發光裝置。可使用基座頂部之晶圓載盤承載晶圓或基材以供沈積處理,基座可進一步配合加熱手段對晶圓加熱。
沈積過程中,在晶圓邊緣未經阻擋或遮蔽的情況下,經沈積處理所形成之薄膜可延伸至晶圓邊緣甚至側面。此部分薄膜可能會與晶圓載盤之陶瓷環之隆起部分碰撞而導致薄膜破裂。破裂造成之顆粒及粉塵會附著在薄膜之表面上形成缺陷。
為此,發展出利用遮擋裝置覆蓋在晶圓或基材之邊緣上方,以防止電漿沈積在晶圓之邊緣乃至側面。然而,難以確保遮擋裝置之中心在沈積過程中始終與晶圓或基材之中心保持對準。一旦發生偏心,遮擋裝置對晶圓邊緣及側面之遮擋效果就將大打折扣。例如,偏心將導致遮擋不均勻,進而導致在不期望發生沈積之晶圓邊緣及側面出現沈積,而在期望發生沈積之晶圓表面部分未實施有效沈積。
因此,有必要發展一種用於加工晶圓之裝置及方法,防止遮擋裝置之中心與晶圓或基材之中心在沈積之整個過程中發生偏心。
本申請案之目的在於提供一種用於加工晶圓之裝置及方法,以在沈積之整個過程中始終使遮擋裝置之中心與晶圓或基材之中心維持自動對準而不發生偏心,且不顯著增加成本及工藝複雜度。
本申請案之一實施例提供一種用於加工晶圓之裝置,其包含:加熱器,其包含基座,上述基座之頂部包含環形邊台及相對於上述環形邊台下凹以容置晶圓之晶圓載盤;側環,其包含外側部分及頂部,上述外側部分環繞上述基座之外側壁,上述頂部覆蓋上述環形邊台之外側部分且包含向心傾斜面;以及影子環,其底部包含與上述側環之上述頂部之上述向心傾斜面匹配的傾斜面。
本申請案之又一實施例提供一種使用上述用於加工晶圓之裝置加工晶圓之方法,其包含:將晶圓置放於上述晶圓載盤中;以及升高上述基座及上述側環,使上述側環之上述頂部之上述向心傾斜面與上述影子環之上述底部之上述傾斜面接觸。
本申請案之另一實施例提供一種用於加工晶圓之裝置,其包含:加熱器,其包含基座,上述基座之頂部包含環形邊台及相對於上述環形邊台下凹以容置晶圓之晶圓載盤;以及影子環,其包含側壁及自上述側壁向內延伸之遮擋部,當上述影子環架設在上述基座上時,上述側壁環繞上述基座之外側壁,且上述遮擋部覆蓋並延伸超過上述環形邊台。
本申請案之再一實施例提供使用上述用於加工晶圓之裝置加工晶圓之方法,其包含:將晶圓置放於上述晶圓載盤中;以及升高上述基座,使上述基座與上述影子環之上述遮擋部接觸。
應瞭解,本發明之廣泛形式及其各自特徵可結合使用、可互換及/或獨立使用,並且不用於限制參考單獨的廣泛形式。
為更好地理解本發明之精神,以下結合本發明之部分較佳實施例對其作進一步說明。
在本說明書中,除非經特別指定或限定之外,相對性用詞例如:「中央」、「縱向」、「側向」、「前方」、「後方」、「右方」、「左方」、「內部」、「外部」、「較低」、「較高」、「水平」、「垂直」、「高於」、「低於」、「上方」、「下方」、「頂部」、「底部」以及其衍生性用詞(例如「水平地」、「向下」、「向上」等等)應解釋成引用在論述中所描述或在附圖中所描示之方向。此等相對性用詞僅用於描述上的方便,且並不要求將本申請案以特定方向建構或操作。
以下詳細地論述本發明之各種實施方案。儘管論述了特定實施方案,但應理解,此等實施方案僅用於示出之目的。熟習相關技術者將認識到,在不偏離本發明之精神及保護範疇的情況下,可使用其他部件及組態。
圖1顯示晶圓加工裝置100的部分截面圖,晶圓加工裝置100例如可用於實施沈積處理。
晶圓加工裝置100包含加熱器101,加熱器101可對晶圓進行加熱以促進沈積處理。當可理解,加熱器101亦可不具有或不開啟加熱功能。加熱器可為陶瓷加熱器、鋁加熱器或任何適用的加熱器。加熱器101之頂部包含基座102,基座102之頂部包含環形邊台103及晶圓載盤104,晶圓載盤104相對於環形邊台103下凹以容置或收納晶圓105。自俯視視角觀察,環形邊台103環繞或圍封晶圓載盤104。當晶圓載盤104容置或收納晶圓105時,環形邊台103同時環繞或圍封晶圓載盤104及其中之晶圓105。在一實施例中,基座102之晶圓載盤104區域內可包含通孔106及升降銷107,通孔106貫穿基座102,升降銷107可在通孔106中做升降運動。通孔106頂部可具有收納槽,升降銷107頂部可具有突出部,升降銷107可因其突出部收入通孔106之收納槽而停止下降運動。儘管圖1僅示出一個通孔106及一個升降銷107,但熟習此項技術者可理解,晶圓載盤104區域內可包含更多數量之通孔106及升降銷107。
晶圓加工裝置100亦包含側環108,側環108架設在加熱器101之基座102之邊緣上。側環108包含外側部分108a及頂部108b。外側部分108a環繞基座102之外側壁,因而側環108與基座102及其上之晶圓載盤104可實現中心對準。頂部108b覆蓋環形邊台103之外側部分並包含向心傾斜面。
晶圓加工裝置100進一步包含影子環109,影子環109之底部包含與側環108之頂部108b之向心傾斜面相匹配的傾斜面。影子環亦可包括自上述傾斜面向外延伸之支撐部。在圖1所示實施例中,側環108與加熱器101之基座102均位於影子環109下方並與影子環109分離。晶圓105在升降銷107之支撐下懸置於晶圓載盤104上方。
在一較佳實施例中,晶圓加工裝置100可包含泵環110。可在由晶圓載盤104、泵環110以及晶圓105上方之簇射頭(showerhead)構成之大體封閉區域內對晶圓105實施沈積處理。根據本揭露部分實施例,泵環110之側壁上可進一步包含一或多個排氣孔111,排氣孔111可與外部真空泵(未顯示)相連接以抽取反應氣體。泵環110之內側壁可包含階梯或內壁止擋件以承托影子環109。根據本揭露部分實施例,泵環110內側壁上之階梯或內壁止擋件可僅承托影子環109之支撐部。當可理解,影子環109亦可不依賴階梯或內壁止擋件之承托而分離地懸置在加熱器101上方。
圖2顯示圖1中之升降銷107下降以引導晶圓105隨之下降並納入晶圓載盤104與晶圓載盤104之表面直接接觸。晶圓105被納入晶圓載盤104後,晶圓105之中心與晶圓載盤104之中心實現對準。
圖3顯示圖2中之加熱器101之基座102向上升高以帶動側環108及晶圓105隨基座102共同上升,直至側環108之上表面與影子環109之下表面匹配嵌合。如圖3所示,側環108之頂部108b包含向心傾斜面,影子環109之底部包含與側環108之頂部108b之向心傾斜面相匹配的傾斜面(詳見下文)。因此,即使影子環109與側環108在接觸之初存在偏心,影子環109亦將隨著基座102之上升而輕易地沿著匹配的向心傾斜面移入最佳匹配位置,最終使側環108之上表面與影子環109之下表面匹配嵌合。側環108之上表面與影子環109之下表面匹配嵌合後,影子環109之中心與側環108之中心實現自動對準,並與晶圓105之中心及晶圓載盤104之中心實現自動對準。
圖4顯示圖3中之加熱器101之基座102進一步向上升高以帶動晶圓105、側環108及影子環109隨基座102共同繼續升高,直至影子環109之上表面行進至預定加工位置,以執行沈積處理。較佳地,預定加工位置鄰近排氣孔111下邊緣。
完成沈積處理後,可經由圖1至圖4所示操作之逆向操作取出晶圓105。
圖5顯示晶圓加工裝置100處於圖3所示之嵌合狀態下的局部放大圖。側環108包含外側部分108a及頂部108b,外側部分108a環繞基座102之外側壁,頂部108b覆蓋基座102之環形邊台103之外側部分並包含向心傾斜面120。
影子環109之底部可包含與側環108頂部之向心傾斜面120相匹配的傾斜面130。當側環108頂部之向心傾斜面120與影子環之底部之傾斜面130接觸時,晶圓105被影子環109覆蓋之邊緣沿徑向之長度例如可小於或等於0.5 mm。在一較佳實施例中,影子環109進一步包含自傾斜面130向內或向心延伸之遮擋部109a,以及自傾斜面130向外延伸之支撐部109b。在一較佳實施例中,支撐部109b可架設在泵環110內側壁之階梯或內壁止擋件上。在另一較佳實施例中,遮擋部109a之頂部可進一步包含向心傾斜面140。較佳地,影子環109自重約90 g,側環108自重約140 g。如圖5所示,影子環109之遮擋部109a不接觸晶圓105之邊緣。
圖6為圖1至圖5所示之影子環109的結構示意圖。如圖6所示,影子環109相對於中心軸601 (不可見)對稱。當影子環109之中心與晶圓及晶圓載盤之中心自動對準時,上述中心點所連成之直線(不可見)與中心軸601重合。在圖6之實例中,影子環109具有4個支撐部。在其他實施例中,影子環109可具有更多或更少數量之支撐部。
圖7為圖6所示影子環109的半切結構示意圖,其橫截面與圖1至圖5所示之影子環109之橫截面形狀相同。
圖8為圖1至圖5所示之側環108的結構示意圖。側環108相對於中心軸801 (不可見)對稱。當圖8所示之側環108與圖6所示之影子環109彼此匹配嵌合時,側環108之中心軸801與影子環109之中心軸601重合。
圖9為圖8所示側環108的半切結構示意圖,其橫截面與圖1至圖5所示之側環108之橫截面形狀相同。
圖10顯示晶圓加工裝置1000的部分截面圖,晶圓加工裝置1000例如可用於實施沈積處理。
晶圓加工裝置1000包含加熱器1001,加熱器1001可對晶圓進行加熱以促進沈積處理。當可理解,加熱器1001亦可不具有或不開啟加熱功能。加熱器可為陶瓷加熱器、鋁加熱器或任何適用的加熱器。加熱器1001之頂部包含基座1002,基座1002之頂部包含環形邊台1003及晶圓載盤1004,晶圓載盤1004相對於環形邊台1003下凹以容置或收納晶圓1005。自俯視視角觀察,環形邊台1003環繞或圍封晶圓載盤1004。當晶圓載盤1004容置或收納晶圓1005時,環形邊台1003同時環繞或圍封晶圓載盤1004及其中之晶圓1005。在一較佳實施例中,基座1002之晶圓載盤1004區域內可包含通孔1006及升降銷1007,通孔1006貫穿基座1002,升降銷1007可在通孔1006中做升降運動。通孔1006頂部可具有收納槽,升降銷1007頂部可具有突出部,升降銷1007可因其突出部收入通孔1006之收納槽而停止下降運動。儘管圖10僅示出一個通孔1006及一個升降銷1007,但熟習此項技術者可理解,晶圓載盤1004區域內可包含更多數量之通孔1006及升降銷1007。
晶圓加工裝置1000進一步包含影子環1009。影子環1009包含側壁1009a及自側壁1009a向內或向心延伸之遮擋部1009b,當影子環1009架設在基座1002上時,側壁1009a環繞基座1002之外側壁,且遮擋部1009b覆蓋並延伸超過環形邊台1003。在一較佳實施例中,遮擋部1009b之頂部可包含向心傾斜面。在另一較佳實施例中,影子環1009可進一步包括自側壁1009a向外延伸之支撐部。在圖10所示實施例中,加熱器1001之基座1002位於影子環1009下方並與影子環1009分離。晶圓1005在升降銷1007之支撐下懸置於晶圓載盤1004上方。
在一較佳實施例中,晶圓加工裝置1000可包含泵環1010。可在由晶圓載盤1004、泵環1010以及晶圓1005上方之簇射頭(showerhead)構成之大體封閉區域內對晶圓1005實施沈積處理。較佳地,泵環1010之側壁上可進一步包含一或多個排氣孔1011,排氣孔1011可與外部之真空泵(未顯示)相連接以抽取反應氣體。泵環1010之內側壁可包含階梯或內壁止擋件以承托影子環1009。較佳地,泵環1010內側壁上之階梯或內壁止擋件可僅承托影子環1009之支撐部。當可理解,影子環1009亦可不依賴階梯或內壁止擋件之承托而分離地懸置在加熱器1001上方。
圖11顯示圖10中之升降銷1007下降以引導晶圓1005隨之下降並納入晶圓載盤1004與晶圓載盤1004之表面直接接觸。晶圓1005被納入晶圓載盤1004後,晶圓1005之中心與晶圓載盤1004之中心實現對準。
圖12顯示圖11中之加熱器1001之基座1002向上升高以帶動晶圓1005隨基座1002共同上升,直至基座1002頂部之環形邊台1003之上表面與影子環1009之遮擋部1009b接觸並匹配嵌合。環形邊台1003之上表面與影子環1009之遮擋部1009b接觸後,影子環1009之中心與晶圓1005之中心及晶圓載盤1004之中心實現自動對準。
圖13顯示圖12中之加熱器1001之基座1002進一步向上升高以帶動晶圓1005及影子環1009隨基座1002共同繼續升高,直至影子環1009之上表面行進至預定加工位置,以執行沈積處理。較佳地,預定加工位置鄰近排氣孔1011下邊緣。
完成沈積處理後,可經由圖10至圖13所示操作之逆向操作取出晶圓1005。
圖14顯示晶圓加工裝置1000處於圖12所示之嵌合狀態下的局部放大圖。由影子環1009之側壁1009a及遮擋部1009b構成之底部形狀可與基座1002之邊緣形狀相匹配。當基座1002頂部之環形邊台1003之上表面與影子環1009之遮擋部1009b接觸時,晶圓1005被影子環1009覆蓋之邊緣沿徑向之長度例如可小於或等於0.5 mm。在一較佳實施例中,影子環1009可進一步包括自側壁1009a向外延伸之支撐部1009c。在一較佳實施例中,側壁1009a之底部邊緣或環形邊台1003之外邊緣可包含弧形倒角以促進嵌合。在一較佳實施例中,遮擋部1009b之頂部可包含向心傾斜面1040。在另一較佳實施例中,影子環109自重約210 g。如圖14所示,影子環1009之遮擋部1009b不接觸晶圓1005之邊緣。
影子環1009之側壁1009a上可包含一或多個通孔及一或多個防磨球1200 (圖14中僅例示性地示出一個通孔及一個防磨球),一或多個防磨球1200可降低影子環1009與環形邊台1003嵌合時之摩擦力。在一較佳實施例中,一或多個防磨球1200可進一步經由螺釘1100固持在一或多個通孔中。較佳地,一或多個防磨球1200可為藍寶石球,或其他任何適用的材料。
圖15為圖10至圖14所示之影子環1009的結構示意圖。如圖15所示,影子環1009相對於中心軸1501 (不可見)對稱。當影子環1009之中心與晶圓及晶圓載盤之中心自動對準時,上述中心點所連成之直線(不可見)與中心軸1501重合。在圖15之實例中,影子環1009具有4個支撐部及4個通孔(通孔中可安置防磨球)。在其他實施例中,影子環1009可具有更多或更少數量之支撐部及通孔,支撐部之數量不必與通孔之數量一致。
圖16為圖15所示影子環1009的半切結構示意圖,其橫截面與圖10至圖14所示之影子環1009之橫截面形狀相同。
圖17顯示圖14至圖16中包含螺釘1100及防磨球1200之影子環1009的局部放大圖。
本發明各個實施例所提供之用於加工晶圓之裝置及方法能夠確保在沈積之整個過程中始終使遮擋裝置之中心與晶圓或基材之中心維持自動對準而不發生偏心及遮擋不均勻,並防止沈積處理所形成之薄膜不利地延伸至晶圓邊緣及側面而導致薄膜破裂並在薄膜之表面上形成缺陷,同時無需顯著增加成本及工藝複雜度。
本發明之技術內容及技術特點已由上述相關實施例加以描述,然而上述實施例僅為實施本發明之範例。熟習此項技術者仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此,本發明已揭示之實施例並未限制本發明之範疇。相反地,包含於申請專利範圍之精神及範疇的修改及均等設置均包括於本發明之範疇內。
100:晶圓加工裝置
101:加熱器
102:基座
103:環形邊台
104:晶圓載盤
105:晶圓
106:通孔
107:升降銷
108:側環
108a:外側部分
108b:頂部
109:影子環
109a:遮擋部
109b:支撐部
110:泵環
111:排氣孔
120:向心傾斜面
130:傾斜面
140:向心傾斜面
601:中心軸
801:中心軸
1000:晶圓加工裝置
1001:加熱器
1002:基座
1003:環形邊台
1004:晶圓載盤
1005:晶圓
1006:通孔
1007:升降銷
1009:影子環
1009a:側壁
1009b:遮擋部
1009c:支撐部
1010:泵環
1011:排氣孔
1040:向心傾斜面
1100:螺釘
1200:防磨球
1501:中心軸
圖1顯示向晶圓加工裝置提供晶圓的部分截面圖。
圖2顯示將晶圓納入至晶圓加工裝置之晶圓載盤的部分截面圖。
圖3顯示晶圓加工裝置之側環與影子環匹配嵌合的部分截面圖。
圖4顯示晶圓加工裝置將晶圓移至預定加工位置的部分截面圖。
圖5顯示晶圓加工裝置完成圖3所示嵌合的局部放大圖。
圖6為圖1至圖5所示之影子環的結構示意圖。
圖7為圖6所示之影子環的半切結構示意圖。
圖8為圖1至圖5所示之側環的結構示意圖。
圖9為圖8所示之側環的半切結構示意圖。
圖10顯示向另一晶圓加工裝置提供晶圓的部分截面圖。
圖11顯示將晶圓納入至另一晶圓加工裝置之晶圓載盤的部分截面圖。
圖12顯示另一晶圓加工裝置之基座與影子環匹配嵌合的部分截面圖。
圖13顯示另一晶圓加工裝置將晶圓移至預定加工位置的部分截面圖。
圖14顯示另一晶圓加工裝置完成圖12所示嵌合的局部放大圖。
圖15為圖10至圖13所示之影子環的結構示意圖。
圖16為圖15所示之影子環的半切結構示意圖。
圖17顯示圖14至圖16中包含螺釘及防磨球之影子環的局部放大圖。
100:晶圓加工裝置
102:基座
103:環形邊台
104:晶圓載盤
105:晶圓
108:側環
108a:外側部分
108b:頂部
109:影子環
109a:遮擋部
109b:支撐部
110:泵環
120:向心傾斜面
130:傾斜面
140:向心傾斜面
Claims (33)
- 一種用於加工晶圓之裝置,其包含: 加熱器,其包含基座,上述基座之頂部包含環形邊台及相對於上述環形邊台下凹以容置晶圓之晶圓載盤; 側環,其包含外側部分及頂部,上述外側部分環繞上述基座之外側壁,上述頂部覆蓋上述環形邊台之外側部分且包含向心傾斜面;以及 影子環,其底部包含與上述側環之上述頂部之上述向心傾斜面匹配的傾斜面。
- 如請求項1之裝置,其中上述影子環進一步包括自上述傾斜面向內延伸之遮擋部。
- 如請求項2之裝置,其中上述遮擋部之頂部包含向心傾斜面。
- 如請求項1之裝置,其中上述影子環進一步包括自上述傾斜面向外延伸之支撐部。
- 如請求項1之裝置,其中上述加熱器為陶瓷加熱器或鋁加熱器。
- 如請求項1之裝置,其中上述晶圓載盤進一步包含一或多個升降銷,其可操作以使上述晶圓下降納入上述晶圓載盤或上升脫離上述晶圓載盤。
- 如請求項1之裝置,其進一步包含泵環,上述泵環包含內壁止擋件以承托上述影子環。
- 如請求項7之裝置,其中上述泵環之側壁包含一或多個排氣孔。
- 一種用於加工晶圓之裝置,其包含: 加熱器,其包含基座,上述基座之頂部包含環形邊台及相對於上述環形邊台下凹以容置晶圓之晶圓載盤;以及 影子環,其包含側壁及自上述側壁向內延伸之遮擋部,當上述影子環架設在上述基座上時,上述側壁環繞上述基座之外側壁,且上述遮擋部覆蓋並延伸超過上述環形邊台。
- 如請求項9之裝置,其中上述遮擋部之頂部包含向心傾斜面。
- 如請求項9之裝置,其中上述加熱器為陶瓷加熱器或鋁加熱器。
- 如請求項9之裝置,其中上述影子環之側壁進一步包含一或多個通孔及一或多個防磨球,上述一或多個防磨球經由螺釘固持在上述一或多個通孔中。
- 如請求項12之裝置,其中上述一或多個防磨球為藍寶石球。
- 如請求項9之裝置,其中上述影子環進一步包括自上述側壁向外延伸之支撐部。
- 如請求項9之裝置,其中上述晶圓載盤進一步包含一或多個升降銷,其可操作以使上述晶圓下降納入上述晶圓載盤或上升脫離上述晶圓載盤。
- 如請求項9之裝置,其進一步包含泵環,上述泵環包含內壁止擋件以承托上述影子環。
- 如請求項16之裝置,其中上述泵環之側壁包含一或多個排氣孔。
- 一種使用如請求項1之裝置加工晶圓之方法,其包含: 將晶圓置放於上述晶圓載盤中;以及 升高上述基座及上述側環,使上述側環之上述頂部之上述向心傾斜面與上述影子環之上述底部之上述傾斜面接觸。
- 如請求項18之方法,其中上述影子環架設在泵環之內壁止擋件上,上述方法進一步包含繼續升高上述基座及上述側環以帶動上述影子環脫離上述內壁止擋件並移動至預定加工位置。
- 如請求項18之方法,其中上述影子環進一步包括自上述傾斜面向內延伸之遮擋部。
- 如請求項20之方法,其中上述遮擋部之頂部包含向心傾斜面。
- 如請求項19之方法,其中上述泵環之側壁包含一或多個排氣孔。
- 如請求項18之方法,其中將上述晶圓置放於上述晶圓載盤中包括:將上述晶圓置放於上述晶圓載盤中之一或多個升降銷上,使上述一或多個升降銷之下降以使上述晶圓下降納入上述晶圓載盤。
- 如請求項18之方法,其中當上述側環之上述頂部之上述向心傾斜面與上述影子環之上述底部之上述傾斜面接觸時,上述晶圓被上述影子環覆蓋之邊緣沿徑向之長度小於或等於0.5 mm。
- 如請求項18至24中任一項之方法,其中上述加熱器為陶瓷加熱器或鋁加熱器。
- 一種使用如請求項9之裝置加工晶圓之方法,其包含: 將晶圓置放於上述晶圓載盤中;以及 升高上述基座,使上述基座與上述影子環之上述遮擋部接觸。
- 如請求項26之方法,其中上述影子環架設在泵環之內壁止擋件上,上述方法進一步包含繼續升高上述基座以帶動上述影子環脫離上述內壁止擋件並移動至預定加工位置。
- 如請求項26之方法,其中上述遮擋部之頂部包含向心傾斜面。
- 如請求項27之方法,其中上述泵環之側壁包含一或多個排氣孔。
- 如請求項26之方法,其中將上述晶圓置放於上述晶圓載盤中包括:將上述晶圓置放於上述晶圓載盤中之一或多個升降銷上,使上述一或多個升降銷之下降以使上述晶圓下降納入上述晶圓載盤。
- 如請求項26之方法,其中當上述基座與上述影子環之上述遮擋部接觸時,上述晶圓被上述影子環覆蓋之邊緣沿徑向之長度小於或等於0.5 mm。
- 如請求項26至31中任一項之方法,其中上述加熱器為陶瓷加熱器或鋁加熱器。
- 如請求項26之方法,其中上述影子環之側壁進一步包含一或多個通孔及一或多個防磨球,上述一或多個防磨球經由螺釘固持在上述一或多個通孔中。
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US5855687A (en) * | 1990-12-05 | 1999-01-05 | Applied Materials, Inc. | Substrate support shield in wafer processing reactors |
US5888304A (en) * | 1996-04-02 | 1999-03-30 | Applied Materials, Inc. | Heater with shadow ring and purge above wafer surface |
JP3796005B2 (ja) * | 1997-05-15 | 2006-07-12 | アプライド マテリアルズ インコーポレイテッド | マスク装置及び成膜装置 |
US6063440A (en) * | 1997-07-11 | 2000-05-16 | Applied Materials, Inc. | Method for aligning a wafer |
US6051122A (en) * | 1997-08-21 | 2000-04-18 | Applied Materials, Inc. | Deposition shield assembly for a semiconductor wafer processing system |
US6355108B1 (en) * | 1999-06-22 | 2002-03-12 | Applied Komatsu Technology, Inc. | Film deposition using a finger type shadow frame |
US6607640B2 (en) * | 2000-03-29 | 2003-08-19 | Applied Materials, Inc. | Temperature control of a substrate |
US20020144786A1 (en) * | 2001-04-05 | 2002-10-10 | Angstron Systems, Inc. | Substrate temperature control in an ALD reactor |
US20050196971A1 (en) * | 2004-03-05 | 2005-09-08 | Applied Materials, Inc. | Hardware development to reduce bevel deposition |
US20060016398A1 (en) * | 2004-05-28 | 2006-01-26 | Laurent Dubost | Supporting and lifting device for substrates in vacuum |
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