TW202210596A - 研磨用組成物、晶圓的加工方法、及矽晶圓 - Google Patents

研磨用組成物、晶圓的加工方法、及矽晶圓 Download PDF

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Publication number
TW202210596A
TW202210596A TW110120530A TW110120530A TW202210596A TW 202210596 A TW202210596 A TW 202210596A TW 110120530 A TW110120530 A TW 110120530A TW 110120530 A TW110120530 A TW 110120530A TW 202210596 A TW202210596 A TW 202210596A
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TW
Taiwan
Prior art keywords
wafer
polishing
etching
polishing composition
amount
Prior art date
Application number
TW110120530A
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English (en)
Chinese (zh)
Inventor
大関正彬
阿部達夫
Original Assignee
日商信越半導體股份有限公司
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Filing date
Publication date
Application filed by 日商信越半導體股份有限公司 filed Critical 日商信越半導體股份有限公司
Publication of TW202210596A publication Critical patent/TW202210596A/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW110120530A 2020-09-04 2021-06-07 研磨用組成物、晶圓的加工方法、及矽晶圓 TW202210596A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-148688 2020-09-04
JP2020148688A JP7380492B2 (ja) 2020-09-04 2020-09-04 研磨用組成物及びウェーハの加工方法

Publications (1)

Publication Number Publication Date
TW202210596A true TW202210596A (zh) 2022-03-16

Family

ID=80491034

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110120530A TW202210596A (zh) 2020-09-04 2021-06-07 研磨用組成物、晶圓的加工方法、及矽晶圓

Country Status (5)

Country Link
JP (1) JP7380492B2 (ja)
KR (1) KR20230061382A (ja)
CN (1) CN116210073A (ja)
TW (1) TW202210596A (ja)
WO (1) WO2022049845A1 (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4675448B2 (ja) 1999-06-01 2011-04-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体基板の洗浄方法
CN101291778B (zh) 2005-10-19 2012-06-20 日立化成工业株式会社 氧化铈浆料、氧化铈抛光浆料以及使用其抛光衬底的方法
WO2013161701A1 (ja) 2012-04-26 2013-10-31 株式会社 フジミインコーポレーテッド 研磨用組成物の製造方法
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
WO2016158328A1 (ja) 2015-04-01 2016-10-06 三井金属鉱業株式会社 研摩材および研摩スラリー
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
JP2019121795A (ja) 2017-12-27 2019-07-22 花王株式会社 シリコンウェーハの製造方法
JP6822432B2 (ja) * 2018-02-23 2021-01-27 株式会社Sumco ウェーハの片面研磨方法

Also Published As

Publication number Publication date
JP7380492B2 (ja) 2023-11-15
CN116210073A (zh) 2023-06-02
KR20230061382A (ko) 2023-05-08
WO2022049845A1 (ja) 2022-03-10
JP2022043424A (ja) 2022-03-16

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