KR20230061382A - 연마용 조성물, 웨이퍼의 가공방법, 및 실리콘웨이퍼 - Google Patents

연마용 조성물, 웨이퍼의 가공방법, 및 실리콘웨이퍼 Download PDF

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Publication number
KR20230061382A
KR20230061382A KR1020237007342A KR20237007342A KR20230061382A KR 20230061382 A KR20230061382 A KR 20230061382A KR 1020237007342 A KR1020237007342 A KR 1020237007342A KR 20237007342 A KR20237007342 A KR 20237007342A KR 20230061382 A KR20230061382 A KR 20230061382A
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KR
South Korea
Prior art keywords
polishing
wafer
etching
polishing composition
amount
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KR1020237007342A
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English (en)
Korean (ko)
Inventor
마사아키 오세키
타츠오 아베
Original Assignee
신에쯔 한도타이 가부시키가이샤
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Application filed by 신에쯔 한도타이 가부시키가이샤 filed Critical 신에쯔 한도타이 가부시키가이샤
Publication of KR20230061382A publication Critical patent/KR20230061382A/ko

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020237007342A 2020-09-04 2021-05-31 연마용 조성물, 웨이퍼의 가공방법, 및 실리콘웨이퍼 KR20230061382A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-148688 2020-09-04
JP2020148688A JP7380492B2 (ja) 2020-09-04 2020-09-04 研磨用組成物及びウェーハの加工方法
PCT/JP2021/020581 WO2022049845A1 (ja) 2020-09-04 2021-05-31 研磨用組成物、ウェーハの加工方法、及びシリコンウェーハ

Publications (1)

Publication Number Publication Date
KR20230061382A true KR20230061382A (ko) 2023-05-08

Family

ID=80491034

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237007342A KR20230061382A (ko) 2020-09-04 2021-05-31 연마용 조성물, 웨이퍼의 가공방법, 및 실리콘웨이퍼

Country Status (5)

Country Link
JP (1) JP7380492B2 (ja)
KR (1) KR20230061382A (ja)
CN (1) CN116210073A (ja)
TW (1) TW202210596A (ja)
WO (1) WO2022049845A1 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007046420A1 (ja) 2005-10-19 2007-04-26 Hitachi Chemical Co., Ltd. 酸化セリウムスラリー、酸化セリウム研磨液及びこれらを用いた基板の研磨方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4675448B2 (ja) * 1999-06-01 2011-04-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体基板の洗浄方法
JP6069308B2 (ja) * 2012-04-26 2017-02-01 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
JP6744295B2 (ja) * 2015-04-01 2020-08-19 三井金属鉱業株式会社 研摩材および研摩スラリー
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
JP2019121795A (ja) 2017-12-27 2019-07-22 花王株式会社 シリコンウェーハの製造方法
JP6822432B2 (ja) * 2018-02-23 2021-01-27 株式会社Sumco ウェーハの片面研磨方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007046420A1 (ja) 2005-10-19 2007-04-26 Hitachi Chemical Co., Ltd. 酸化セリウムスラリー、酸化セリウム研磨液及びこれらを用いた基板の研磨方法

Also Published As

Publication number Publication date
CN116210073A (zh) 2023-06-02
JP7380492B2 (ja) 2023-11-15
TW202210596A (zh) 2022-03-16
JP2022043424A (ja) 2022-03-16
WO2022049845A1 (ja) 2022-03-10

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