TW202204589A - 半導體基板用洗淨液 - Google Patents

半導體基板用洗淨液 Download PDF

Info

Publication number
TW202204589A
TW202204589A TW110127197A TW110127197A TW202204589A TW 202204589 A TW202204589 A TW 202204589A TW 110127197 A TW110127197 A TW 110127197A TW 110127197 A TW110127197 A TW 110127197A TW 202204589 A TW202204589 A TW 202204589A
Authority
TW
Taiwan
Prior art keywords
acid
cleaning solution
group
mass
semiconductor substrate
Prior art date
Application number
TW110127197A
Other languages
English (en)
Chinese (zh)
Inventor
大內直子
上村哲也
室祐継
Original Assignee
日商富士軟片電子材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片電子材料股份有限公司 filed Critical 日商富士軟片電子材料股份有限公司
Publication of TW202204589A publication Critical patent/TW202204589A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02—Anionic compounds
    • C11D1/34—Derivatives of acids of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/08—Liquid soap, e.g. for dispensers; capsuled
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW110127197A 2020-07-30 2021-07-23 半導體基板用洗淨液 TW202204589A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-129663 2020-07-30
JP2020129663 2020-07-30

Publications (1)

Publication Number Publication Date
TW202204589A true TW202204589A (zh) 2022-02-01

Family

ID=80036305

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110127197A TW202204589A (zh) 2020-07-30 2021-07-23 半導體基板用洗淨液

Country Status (3)

Country Link
JP (1) JP7469474B2 (fr)
TW (1) TW202204589A (fr)
WO (1) WO2022024714A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI832521B (zh) * 2022-03-25 2024-02-11 日商富士軟片股份有限公司 半導體基板清洗用組成物、半導體元件的製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023182142A1 (fr) * 2022-03-25 2023-09-28 富士フイルム株式会社 Composition, procédé de fabrication d'élément semi-conducteur et procédé de lavage de substrat semi-conducteur
WO2023210579A1 (fr) * 2022-04-26 2023-11-02 富士フイルム株式会社 Procédé de formation de motif et procédé de production de dispositif électronique

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4600169B2 (ja) * 2004-06-25 2010-12-15 Ｊｓｒ株式会社 半導体部品洗浄用組成物および半導体装置の製造方法
WO2018020878A1 (fr) * 2016-07-26 2018-02-01 株式会社フジミインコーポレーテッド Composition de traitement de surface et procédé de traitement de surface utilisant ladite composition de traitement de surface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI832521B (zh) * 2022-03-25 2024-02-11 日商富士軟片股份有限公司 半導體基板清洗用組成物、半導體元件的製造方法

Also Published As

Publication number Publication date
JPWO2022024714A1 (fr) 2022-02-03
WO2022024714A1 (fr) 2022-02-03
JP7469474B2 (ja) 2024-04-16

Similar Documents

Publication Publication Date Title
JP7469474B2 (ja) 半導体基板用洗浄液
TW202144556A (zh) 洗淨液、半導體基板的洗淨方法
JP7220808B2 (ja) 洗浄液、洗浄方法
TW202039812A (zh) 洗淨液
US20230099612A1 (en) Treatment liquid, chemical mechanical polishing method, and method for treating semiconductor substrate
TW202113956A (zh) 洗淨液、洗淨方法
US20220336209A1 (en) Cleaning method and cleaning liquid
US20220325208A1 (en) Cleaning solution and cleaning method
US20220403300A1 (en) Cleaning liquid and cleaning method
JP7433418B2 (ja) 半導体基板用洗浄液
US20230145012A1 (en) Cleaning liquid for semiconductor substrate
US20230065213A1 (en) Cleaning fluid and cleaning method
JP7365427B2 (ja) 洗浄液、洗浄方法
WO2021230127A1 (fr) Liquide de nettoyage et procédé de nettoyage d'un substrat semi-conducteur
JP7509883B2 (ja) 半導体基板用洗浄液
JP7340614B2 (ja) 洗浄方法
WO2023182142A1 (fr) Composition, procédé de fabrication d'élément semi-conducteur et procédé de lavage de substrat semi-conducteur
TW202204593A (zh) 處理液的製造方法
JP2024018964A (ja) 処理液、被対象物の処理方法、及び、半導体デバイスの製造方法
JP2024045009A (ja) 処理液、被対象物の処理方法、半導体デバイスの製造方法