TW202201494A - 具有擴大柵極墊的半導體封裝及其製造方法 - Google Patents

具有擴大柵極墊的半導體封裝及其製造方法 Download PDF

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TW202201494A
TW202201494A TW110120918A TW110120918A TW202201494A TW 202201494 A TW202201494 A TW 202201494A TW 110120918 A TW110120918 A TW 110120918A TW 110120918 A TW110120918 A TW 110120918A TW 202201494 A TW202201494 A TW 202201494A
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gate
metal pad
layer
source
passivation
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TW110120918A
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TWI763529B (zh
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彦迅 薛
約瑟 何
隆慶 王
曉天 張
志強 牛
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加拿大商萬國半導體國際有限合夥公司
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Abstract

本發明公開了一種半導體封裝製造方法，包括提供一個晶圓、採用一個種子層、形成一個光致抗蝕劑層、電鍍一個銅層、去除光致抗蝕劑層、去除種子層、施加研磨製程、形成金屬化和施加分離製程等步驟。本發明還公開了一種半導體封裝，包括一個矽層、一個鋁層、一個鈍化層、一個聚醯亞胺層、一個銅層和一個金屬化。在一個示例中，柵極夾片的接觸區域的面積小於柵極銅表面的面積，柵極夾片的接觸面積大於柵極鋁表面。在另一示例中，柵極引腳的接觸區域的面積大於柵極銅表面的面積，柵極引腳的接觸區域的面積大於柵極鋁表面。

Description

具有擴大柵極墊的半導體封裝及其製造方法
本發明主要涉及一種半導體封裝及其製造方法的技術領域。更確切地說，本發明涉及一種具有擴大柵極墊的半導體封裝及其製造方法。
隨著半導體製造技術的進步，功率半導體晶片在不影響其功率處理能力的前提下，不斷縮小晶片尺寸。隨著功率半導體晶片的尺寸不斷縮小，其柵極墊的尺寸也相應減小。對於需要較小物理尺寸的應用，例如移動應用來說，功率半導體晶片被封裝成3.3mm×3.3mm，或者甚至更小的封裝尺寸。夾片接合技術為功率半導體元件提供了更高的電流處理和更低的電阻的優點，但是與引線接合技術相比，其在製程中產生了更大的面積。為了充分利用晶片尺寸，需要使源極焊盤的尺寸最大化，並使柵極焊盤的尺寸最小化。人們提出了一種混合接合製程，即源極焊盤的夾片接合和柵極焊盤的引線接合。然而，這種混合接合製程增加了製程的複雜性，提高了製造成本，並增加了污染。一般來說，0.3 mm×0.3 mm或更大的柵極墊適用于夾片接合。0.1 mm x 0.1 mm的較小柵極墊必須使用引線接合。在源極焊盤的夾片接合之後的柵極焊盤的引線接合通常有可靠性問題，包括引線沒有粘在柵極焊盤上。在回流焊的過程中，用於源極墊的夾片接合中使用的焊膏溶劑會污染柵極墊。
本發明的目的是提供一種製造多個半導體封裝的方法。該方法包括提供一個晶圓、施加一個種子層、形成一個光致抗蝕劑層、塗覆一個電鍍銅層、去除光致抗蝕劑層、去除種子層、施加研磨製程、形成金屬化和施加分離製程等步驟。
本發明的另一個目的是提供一種半導體封裝，包括一個半導體層、一個鋁層、一個鈍化層、一個聚醯亞胺層、一個銅層和金屬化。在一個示例中，柵極夾片的接觸區域的面積小於柵極銅表面的面積。柵極夾片的接觸區域的面積大於柵極鋁表面。在另一示例中，柵極引腳的接觸區域的面積大於柵極銅表面的面積。柵極引腳的接觸區域的面積大於柵極鋁表面。本發明簡化了製程流程，降低了製造成本，減少了污染。
為了達到上述目的，本發明提供一種用於製備多個功率半導體晶片的方法，該方法包括下列步驟： 製備一個晶圓，包括 多個功率半導體元件，其中多個功率半導體元件中的每個功率半導體元件都包括 一個第一金屬層，位於晶圓的正面，使第一金屬層形成第一源極金屬墊和第一柵極金屬墊的圖案；以及 一個鈍化層，覆蓋第一源極金屬墊和第一柵極金屬墊，所述鈍化層被圖案化，以通過所述鈍化層的一個或多個源極鈍化開口部分露出所述第一源極金屬墊的頂面，並且通過所述鈍化層的柵極鈍化開口部分露出所述第一柵極金屬墊的頂面； 將種子層沉積到晶圓的正面上； 在種子層上方設置光致抗蝕劑層並形成圖案； 在通過光致抗蝕劑層裸露出來的區域中，將第二金屬層電鍍到晶圓的正面上； 去除光致抗蝕劑層； 移除未被第二金屬層覆蓋的種子層的剩餘部分； 研磨晶圓的背面，形成薄晶圓； 在所述薄晶圓的背面上形成金屬化；以及 應用分離製程，形成所述的多個功率半導體晶片。
較佳的，電鍍所述第二金屬層的步驟，形成由所述光致抗蝕劑分隔的第二柵極金屬墊和第二源極金屬墊；其中，所述第二柵極金屬墊覆蓋所述第一柵極金屬墊；其中，所述第二源極金屬墊覆蓋所述第一源極金屬墊；並且其中，所述第二柵極金屬墊的頂表面的區域大於鈍化層的柵極鈍化開口。
較佳的，所述晶圓還具有覆蓋所述鈍化層的聚醯亞胺層；其中形成所述聚醯亞胺層的圖案，通過所述鈍化層的一個或多個源極鈍化開口部分，使所述第一源極金屬墊的頂面部分裸露出來，並且通過所述鈍化層的柵極鈍化開口，使所述第一柵極金屬墊的頂面部分裸露出來。
較佳的，第二柵極金屬墊填充第一柵極金屬墊上方的柵極鈍化開口；並且其中第二柵極金屬墊進一步延伸到鈍化層的頂面和聚醯亞胺層的頂面之上。
較佳的，第一金屬層包括一個鋁層，電鍍第二金屬層的步驟包括一個電鍍銅層的子步驟。
較佳的，多個功率半導體元件中的每個功率半導體元件還包括一個金屬-氧化物半導體場效應電晶體；並且 其中在電鍍銅層的子步驟中的第二柵極金屬墊，通過第一柵極金屬墊電連接到金屬-氧化物半導體場效應電晶體的一個柵極接觸區上。
本發明還提供一個功率半導體晶片，包括： 一個半導體基材，包括一個功率半導體元件； 一個第一金屬層，覆蓋半導體基材，第一金屬層形成圖案，包括隔開的較大區域的第一源極金屬墊和較小區域的第一柵極金屬墊，第一源極金屬墊電連接到功率半導體元件的一個源極接觸區上，第一柵極金屬墊電連接到功率半導體元件的一個柵極接觸區上； 一個鈍化層，覆蓋第一金屬層，鈍化層形成圖案，通過鈍化層的一個或多個源極鈍化開口，使第一源極金屬墊的頂面部分裸露出來，並且通過鈍化層的一個柵極鈍化開口，使第一柵極金屬墊的頂面部分裸露出來，其中一個或多個源極鈍化開口中的每個開口都至少是柵極鈍化開口面積的十倍；以及 一個第二金屬層，覆蓋鈍化層和第一金屬層，第二金屬層包括一個第二源極金屬墊和一個第二柵極金屬墊，被第二源極金屬墊隔開，第二源極金屬墊填充鈍化層的一個或多個源極鈍化開口，並且電連接到第一源極金屬墊，第二柵極金屬墊填充鈍化層的柵極鈍化開口，並且電連接到第一柵極金屬墊； 其中第二柵極金屬墊的頂面區域大於鈍化層的柵極鈍化開口。
較佳的，所述功率半導體晶片還包括覆蓋鈍化層的一個聚醯亞胺層，所述聚醯亞胺層形成圖案，通過所述鈍化層的一個或多個源極鈍化開口，使所述第一源極金屬墊的頂面部分裸露出來，並且通過所述鈍化層的柵極鈍化開口，使所述第一柵極金屬墊的頂面部分裸露出來。
較佳的，第一金屬層包括一個鋁層。
較佳的，第二金屬層包括一個銅層。
較佳的，鈍化層的柵極鈍化開口小於0.3mm×0.3mm，其中第二柵極金屬墊的頂面面積大於0.3mm×0.3mm。
較佳的，半導體元件包括一個金屬-氧化物半導體場效應電晶體，並且其中第二柵極金屬墊通過第一柵極金屬墊電連接到金屬-氧化物半導體場效應電晶體的柵極接觸區。
本發明還提供一種半導體封裝，包括： 一個引線框， 一個半導體晶片，位於引線框上，該半導體晶片包括： 一個半導體基材，包括一個功率半導體元件； 一個鋁層，覆蓋半導體基材的正面，鋁層形成圖案，包括隔開的較大面積的第一源極金屬墊和較小面積的第一柵極金屬墊，第一源極金屬墊電連接到功率半導體元件的源極接觸區，第一柵極金屬墊電連接到功率半導體元件的柵極接觸區； 一個鈍化層，覆蓋鋁層； 一個聚醯亞胺層，在鈍化層上方； 一個電鍍銅層；以及 一個背面金屬，位於與半導體基材的正面相對的背面； 其中鈍化層和聚醯亞胺層形成圖案，通過一個或多個源極鈍化開口，使第一源極金屬墊的頂面部分裸露出來，並且通過一個柵極鈍化開口，使第一柵極金屬墊的頂面部分裸露出來； 其中電鍍銅層包括一個第一源極金屬墊和一個第二柵極金屬墊，與第二源極金屬墊隔開； 其中第二源極金屬墊填充鈍化層的一個或多個源極鈍化開口，並且電連接到第一源極金屬墊上； 其中第二柵極金屬墊填充鈍化層的柵極鈍化開口，並且電連接到第一柵極金屬墊上；並且 其中第二柵極金屬墊的頂面面積大於鈍化層的柵極鈍化開口。
較佳的，引線框包括相互隔開的一個晶片焊盤、一個柵極引線以及一個源極引線；並且其中半導體晶片位於晶片焊盤上，其背部金屬化電連接到晶片焊盤上。
較佳的，一個柵極導電元件將半導體晶片上的第二柵極金屬墊電連接到引線框的柵極引線上；並且其中一個源極導電元件將半導體晶片的第二源極金屬墊電連接到引線框的源極引線上。
較佳的，柵極導電元件和第二柵極金屬墊之間的接觸面積，大於通過柵極鈍化開口裸露的第一柵極金屬墊的頂面面積。
較佳的，柵極導電元件包括一個柵極夾片；並且其中源極導電元件包括一個源極夾片。
較佳的，引線框包括相互隔開的一個源極基底、一個柵極基底以及一個漏極引線；其中半導體晶片翻轉放置在引線框上，第二源極金屬墊電連接到源極基底上，第二柵極金屬墊電連接到柵極基底上；並且其中一個漏極導電元件將背面金屬化電連接到漏極引線上。
較佳的，柵極基底和第二柵極金屬墊之間的接觸面積，大於通過柵極鈍化開口裸露出來的第一柵極金屬墊的頂面面積。
較佳的，半導體元件包括一個金屬-氧化物半導體場效應電晶體，其中第二柵極金屬墊通過第一柵極金屬墊，電連接到金屬-氧化物半導體場效應電晶體的柵極接觸區上
與習知技術相比，本發明的有益效果在於： 本發明的鍍銅取代了傳統的NiPdAu鍍層。本發明的柵極墊的夾片接合和源極墊的夾片接合取代了傳統的混合接合製程，簡化了製程流程，降低了製造成本，減少了污染。
下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地描述，顯然，所描述的實施例僅僅是本發明一部分實施例，而不是全部的實施例。基於本發明中的實施例，本領域的通常知識者在沒有做出具進步性改變前提下所獲得的所有其他實施例，都屬於本發明保護的範圍。
在本發明的示例中，圖3表示製備多個半導體封裝的製程300的流程圖。
製程300可以從區塊302開始。在本發明的示例中，圖1Ai和圖1Fi表示俯視圖，圖1Aii、1B、1C、1D、1E和1Fii表示製備多個半導體封裝的製程剖面圖。為了簡便，在圖1Ai和1Fi以及圖1Aii、1B、1C、1D和1E中均只表示出了一個半導體晶片。在圖1Fii中，相鄰的半導體晶片193的一部分用虛線表示。
在區塊302中，參見圖1Ai和1Aii，晶圓100包括多個功率半導體晶片。晶圓100上的每個功率半導體晶片都包括一個半導體基材層110，其上形成有功率半導體元件、一個第一金屬層120、優選一個鋁層、一個鈍化層130和一個聚醯亞胺層140。在一個示例中，第一金屬層120佈置在半導體基材層110的前表面114上方。在另一實例中，第一金屬層120圖案化成較大面積的第一源極金屬墊120S，以及與第一源極金屬墊120S分離的較小面積的第一柵極金屬墊120G。在本發明的示例中，第一源極金屬墊120S的面積是第一柵極金屬墊120G的面積的至少五十倍。第一源極金屬墊120S電連接到功率半導體元件的一個源極接觸區（圖中沒有表示出），功率半導體元件形成在半導體基材層110的頂部，以及第一柵極金屬墊120G的頂部的電連接到功率半導體元件的柵極接觸區域（圖中沒有表示出），該功率半導體形成在半導體基材層110的頂部。鈍化層130位於第一金屬層120之上，並且部分填充分隔第一源極金屬墊120S和第一柵極金屬墊120G的第一間隙。聚醯亞胺層140位於鈍化層130上方，並且比鈍化層130厚得多。聚醯亞胺層140填充該間隙的其餘部分，以提供穿過該間隙的實質性平頂面，該間隙將第一源極金屬墊120S和第一柵極金屬墊120G分隔開。
鈍化層130和聚醯亞胺層140在第一源極金屬墊120S上具有一個或多個源極鈍化開口124的圖案，並且在第一柵極金屬墊120G上形成一個柵極鈍化開口126的圖案。在本發明的示例中，一個或多個源極鈍化開口124中的每個區域至少是柵極鈍化開口126的面積的十倍。第一柵極金屬墊120G包括通過柵極鈍化開口126的外露柵極鋁表面125。柵極鈍化開口126的中心與第一柵極金屬墊120G的中心基本對準，其柵極鈍化開口126的面積小於整個第一柵極金屬墊120G的頂面面積。第一源極金屬墊120S還包括第一裸露源極鋁表面127和第二裸露源極鋁表面129通過一個或多個源極鈍化開口124。在另一示例中，聚醯亞胺層140是較佳的，鈍化層130填充間隙，以便在分隔第一源極金屬墊120S和第一柵極金屬墊120G的間隙上提供實質性的平坦頂面。區塊302後面可以進行區塊304。
在區塊304中，現在參照圖1B，將種子層150應用到晶圓100的前表面。在本發明的示例中，種子層通過物理氣相沉積（PVD）製程應用。種子層150包括第一部分152和第二部分154。種子層150的第一部分152將擴散到圖1D的第二金屬層180（在一個示例中，第二金屬層180是銅層）。在區塊312中，種子層150的第二部分154將被移除。在本公開的示例中，種子層150包括TiCu。區塊304後面可以進行區塊306。
在區塊306中，參考圖1C，在種子層150上方形成一個光致抗蝕劑層170。光致抗蝕劑層170在第一源極金屬墊120S上具有一個或多個源極光致抗蝕劑開口174，並且在第一柵極金屬墊120G上具有柵極光致抗蝕劑開口176。在本發明的示例中，一個或多個源極光致抗蝕劑開口174中的每一個的面積，是柵極光致抗蝕劑開口176面積的至少十倍。在一個示例中，一個或多個源極光致抗蝕劑開口174的邊緣基本上與一個或多個源極鈍化開口124的邊緣對齊，使得一個或多個源極光致抗蝕劑開口174基本上與一個或多個源極鈍化開口124的形狀和尺寸相同。在另一個示例中，柵極光致抗蝕劑開口176的邊緣從柵極鈍化開口126的邊緣凹陷，使得柵極光致抗蝕劑開口176的面積大於柵極鈍化開口126的面積。光致抗蝕劑層170覆蓋種子層150的第二部分154。區塊306之後可以進行區塊308。
在區塊308中，參見圖1D，在未被光致抗蝕劑層170覆蓋的種子層150的第一部分152上鍍第二金屬層180，優選銅層。在該過程中，種子層150的第一部分152擴散到銅層中。第二金屬層180包括具有由一個或多個源極光致抗蝕劑開口174限定的頂面區域的第二源極金屬墊180S，以及一個具有由柵極光致抗蝕劑開口176限定的頂面區域的第二柵極金屬墊180G。光致抗蝕劑層170將第二柵極金屬墊180G與第二源金屬墊180S分開。區塊308後面可以進行區塊310。
在區塊310中，參見圖1E，利用剝離製程，除去圖1D所示的光致抗蝕劑層170。區塊310之後可以進行區塊312。
在區塊312中，仍然參見圖1E，通過蝕刻製程，去除圖1B所示的種子層150的第二部分154。聚醯亞胺層140的前表面142的一部分通過分隔第二源極金屬墊180S和第二柵極金屬墊180G的第二間隙裸露出來。第二間隙至少與分隔第一源極金屬墊120S和第一柵極金屬墊120G的第一間隙一樣寬。在一個示例中，第二柵極金屬墊的頂面邊緣延伸超出鈍化層130的第一邊緣，和與第二柵極金屬墊接合的聚醯亞胺層140，朝向鈍化層130的第二邊緣和與第二源極金屬墊接合的聚醯亞胺層140。在另一示例中，第二源極金屬墊180S的邊緣基本上對準鈍化層130和聚醯亞胺層140的第二邊緣，聚醯亞胺層的裸露前表面142位於第一邊緣和第二邊緣之間。區塊312之後可以進行區塊314。
在區塊314中，參見圖1Fi和1Fii中，在圖1Aii的半導體基材層110的圖1Aii的晶片背面112上應用研磨製程，形成薄晶圓190。在本發明的實施例中，研磨製程前，晶圓的厚度在700µm到800µm的範圍內。減薄後的薄晶圓190的厚度在80µm到120µm的範圍內。區塊314之後可以進行區塊316。
在區塊316中，參見圖1Fii，在減薄晶圓190的背面192上形成金屬化194。在本發明的示例中，金屬化194包括一個鈦層、一個鎳層和一個銀層。金屬化194形成功率半導體元件的底部漏極。區塊316之後可以進行區塊318。
在區塊318中，仍然參見圖1Fii，分離過程198將半導體晶片191從晶圓100的相鄰半導體晶片193（以虛線表示）上分離出來，以便形成多個半導體晶片，每個半導體晶片包括一個功率半導體元件。
圖1Fii表示一種包括一個功率半導體元件的半導體晶片191。半導體晶片191包括一個半導體基材層110’、一個第一金屬層120、一個鈍化層130、一個聚醯亞胺層140和一個形成在半導體基材層110’的正面的第二金屬層180，以及一個形成在半導體基材層110′的背面上的背面金屬化194。在一個示例中，第一金屬層120包括一個鋁層。在另一實例中，第一金屬層120圖案化為與第一源極金屬墊120S分離的第一源極金屬墊120S和第一柵極金屬墊120G。第一源極金屬墊120S電連接到功率半導體元件的源極接觸區域（圖中沒有表示出），並且第一柵極金屬墊120G電連接連接到功率半導體元件的柵極接觸區域（圖中沒有表示出）。鈍化層130位於第一金屬層120上方。聚醯亞胺層140位於鈍化層130上方。鈍化層130和聚醯亞胺層140在第一源極金屬墊120S上具有一個或多個源極鈍化開口124，並且在第一柵極金屬墊120G上具有一個柵極鈍化開口126。
第二金屬層180填充第一源極金屬墊120S上的一個或多個源極鈍化開口124和第一柵極金屬墊120G上的柵極鈍化開口126。第二金屬層180進一步延伸到鈍化層130和聚醯亞胺層140的頂面之上。第二金屬層180包括一個第二柵極金屬墊180G和一個第二源極金屬墊180S，第二柵極金屬墊180G佈置在第一柵極金屬墊120G的上方。第二柵極金屬墊180G具有基本平坦的頂面，其面積大於柵極鈍化開口126，其限定了第一柵極金屬墊120G的裸露柵極鋁表面125。在另一示例中，第二金屬層180包括一個鍍銅層。
第二柵極金屬墊180G包括在提供功率半導體元件的柵極電極的半導體晶片的前表面184上的一個裸露的柵極銅表面185。第二柵極金屬墊180G通過第一柵極金屬墊120G電連接到功率半導體元件的柵極接觸區域（圖中沒有表示出）。第二柵極金屬墊180G的裸露柵極銅表面185的面積，大於第一柵極金屬墊120G的外露柵極鋁表面125的面積通過柵極鈍化開口126曝光。在一個可選實施例，第二柵極金屬墊180G的頂面面積大於第一柵極金屬墊120G的整個頂面面積。
第二源極金屬墊180S通過第一源極金屬墊120S電連接到功率半導體元件的源極接觸區域（圖中沒有表示出），提供功率半導體元件的一個源極。如圖1Fi所示，第二源極金屬墊180S還包括分別覆蓋第一裸露源極鋁表面127和第二裸露源極鋁表面129的半導體晶片的前表面上的第一裸露源極銅表面187和第二裸露源極銅表面189。
在本發明的示例中，區塊308（圖1Fi）的裸露柵極銅表面185為第一矩形。區塊302（圖1Ai）的外露柵極鋁表面125的區域是第二矩形形狀。
在半導體基材層110’的背面上形成的背面金屬化194，基本上延伸到半導體基材層110'的整個背面上。在一個示例中，半導體晶片包括一個垂直功率半導體元件，並且提供背表面金屬化194作為漏極。施加到柵極的電壓控制源極和漏極之間的電流。
在本發明的示例中，圖2Ai表示半導體封裝200的俯視圖，圖2Aii表示半導體封裝200沿CC’線的剖面圖。
在本發明的示例中，含有一個功率半導體元件的半導體晶片191沉積在一個引線框201上，引線框201的底部漏極電極（金屬化194）電連接到引線框的晶片焊盤203上。一個源極導電元件210以電氣和機械地方式，將第一裸露源極銅表面187和第二裸露源極銅表面189連接到引線框架201的源極引線212上，以及柵極導電元件220以電氣和機械地方式，將裸露柵極銅表面185連接到引線框架201的柵極引線222上。柵極引線222、源極引線212和晶片焊盤203彼此分離。較佳的漏極引線可以電連接到晶片焊盤203上。柵極引線222、源極引線212和晶片焊盤203或可選漏極引線的至少部分底面，通過封裝引線框架201、半導體晶片191、源極導電元件210和柵極導電元件220的成型封裝（圖中沒有表示出）底部裸露出來。
在本發明的示例中，半導體晶片191包括一個半導體電晶體，例如一個金屬氧化物半導體場效應電晶體（MOSFET）。區塊308的裸露柵極銅表面185（圖1Fi）電連接到區塊302的裸露柵極鋁表面125（圖1Ai）。施加在柵極引線上的電壓，控制源極引線和漏極引線之間的電流。
在本發明的優選示例中，柵極導電元件220可以是通過導電粘合劑（例如焊料或導電環氧樹脂）連接到第二柵極金屬墊180G的裸露柵極銅表面185的金屬夾片。在另一優選示例中，柵極導電元件220包括一個連接到裸露柵極銅表面185的金屬帶，該金屬帶使用或不使用粘合劑。導電元件220和裸露柵極銅表面185之間的接觸面積225，小於裸露柵極銅表面185的面積。通過區塊302的柵極鈍化開口126，柵極導電元件220和裸露柵極銅表面185之間的接觸區域225，大於裸露柵極鋁表面125（圖1Ai）。
在本發明的示例中，圖2B表示半導體封裝250的剖面圖。
在本發明的示例中，包括一個功率半導體元件的半導體晶片191翻轉並佈置在引線框251上，第二源極金屬墊180S電連接到引線框架251的源極基座260上，第二柵極金屬墊180G電連接到引線框251的柵極基座240上。漏極導電元件253以電氣和機械地方式，將半導體晶片191的底部漏極電極（金屬化194）連接到引線框251的漏極引線上（圖中沒有表示出）。柵極基座240、源極基座260和漏極引線彼此分離。柵極基座240可以連接到柵極引線上（圖中沒有表示出），並且源極基座260可以連接到源極引線上。柵極引線、源極引線和漏極引線的至少部分的底部表面，通過封裝引線框251、半導體晶片191和漏極導電元件253的成型封裝（圖中沒有表示出）的底部裸露出來。
在本發明的示例中，半導體晶片191包括一個半導體電晶體，例如MOSFET。裸露柵極銅表面185電連接到區塊302（圖1Ai）的裸露柵極鋁表面125上。施加到柵極基極的電壓，控制源極引線和漏極引線之間的電流。
在本發明的優選示例中，第二柵極金屬墊180G的裸露柵極銅表面185可通過導電粘合劑（例如焊料或導電環氧樹脂）連接到柵極基座240上。通過區塊302的柵極鈍化開口126（圖1Ai），柵極基座240和裸露柵極銅表面185之間的接觸區域245，大於裸露柵極鋁表面125。
在本發明的示例中，半導體晶片191包括一種金屬氧化物半導體場效應電晶體（MOSFET），其具有柵極和設置在前表面上的源極以及背面的漏極。半導體晶片191可包括具有控制電極的其他類型的垂直半導體元件，該控制電極佈置在半導體晶片的主表面上，以控制流過半導體晶片的相反主表面的電流，例如絕緣柵極控制電晶體（IGBT）。
本領域的通常知識者可以認識到，本發明公開的實施例的修改是可能的。例如，裸露柵極銅表面185的區域的大小可以改變。本領域的通常知識者可以進行其他修改，並且所有這些修改都被認為屬於本發明的範圍，如同申請專利範圍所限定的那樣。
以上所述，僅為本發明的具體實施方式，但本發明的保護範圍並不局限於此，任何熟悉本技術領域的通常知識者在本發明揭露的技術範圍內，可輕易想到各種等效的修改或替換，這些修改或替換都應涵蓋在本發明的保護範圍之內。因此，本發明的保護範圍應以申請專利範圍的保護範圍為原則。
100:晶圓 110, 110’:半導體基材層 114:半導體基材層的前表面 120:第一金屬層 120S:第一源極金屬墊 120G:第一柵極金屬墊 124:源極鈍化開口 125:外露柵極鋁表面 126:柵極鈍化開口 127:第一裸露源極鋁表面 129:第二裸露源極鋁表面 130:鈍化層 140:聚醯亞胺層 142:聚醯亞胺層的前表面 150:種子層 152:第一部分 154:第二部分 170:光致抗蝕劑層 174:源極光致抗蝕劑開口 176:柵極光致抗蝕劑開口 180:第二金屬層 180S:第二源極金屬墊 180G:第二柵極金屬墊 185:裸露柵極銅表面 187:第一裸露源極銅表面 189:第二裸露源極銅表面 190:薄晶圓 191, 193:半導體晶片 192:薄晶圓的背面 194:金屬化 198:分離過程 200:半導體封裝 201:引線框 203:晶片焊盤 210:源極導電元件 212:源極引線 220:柵極導電元件 222:柵極引線 240:柵極基座 245:柵極基座的接接觸區域 300:製程 302, 304, 306, 308, 310, 312, 314, 316, 318:區塊
為了更清楚地說明本發明技術方案，下面將對描述中所需要使用的附圖作簡單地介紹，顯而易見地，下面描述中的附圖是本發明的一個實施例，對於本領域的通常知識者來講，在不付出具進步性改變的前提下，還可以根據這些附圖獲得其他的附圖： 圖1Ai和圖1Fi表示在本發明的示例中，製備多個半導體封裝的製程步驟的俯視圖； 圖1Aii、1B、1C、1D、1E和圖1Fii表示該製程步驟的剖面圖； 圖1Aii表示圖1Ai沿AA’線的剖面圖； 圖1Fii表示圖1Fi沿BB’線的剖面圖； 圖2Ai表示在本發明的示例中，半導體封裝的俯視圖； 圖2Aii表示圖2Ai半導體封裝的剖面圖； 圖2B表示在本發明的示例中，另一種半導體封裝的剖面圖； 圖3表示在本發明的示例中，製備多個半導體封裝的一種製程流程圖。
300:製程
302,304,306,308,310,312,314,316,318:區塊

Claims (20)

  1. 一種用於製備多個功率半導體晶片的方法，其中，該方法包括下列步驟： 製備一個晶圓，包括： 多個功率半導體元件，其中該多個功率半導體元件中的每個該功率半導體元件都包括： 一個第一金屬層，位於該晶圓的正面，使該第一金屬層形成一第一源極金屬墊和一第一柵極金屬墊的圖案；及 一個鈍化層，覆蓋該第一源極金屬墊和該第一柵極金屬墊，該鈍化層被圖案化，以通過該鈍化層的一個或多個源極鈍化開口部分露出該第一源極金屬墊的頂面，並且通過該鈍化層的柵極鈍化開口部分露出該第一柵極金屬墊的頂面； 將一種子層沉積到該晶圓的正面上； 在該種子層上方設置一光致抗蝕劑層並形成圖案； 在通過該光致抗蝕劑層裸露出來的區域中，將一第二金屬層電鍍到該晶圓的正面上；及 去除該光致抗蝕劑層； 移除未被該第二金屬層覆蓋的該種子層的剩餘部分； 研磨該晶圓的背面，形成薄晶圓； 在該薄晶圓的背面上形成金屬化；以及 應用分離製程，形成該多個功率半導體晶片。
  2. 如請求項1所述的用於製備多個功率半導體晶片的方法，其中，電鍍該第二金屬層的步驟，形成由該光致抗蝕劑分隔的一第二柵極金屬墊和一第二源極金屬墊；其中，該第二柵極金屬墊覆蓋該第一柵極金屬墊；其中，該第二源極金屬墊覆蓋該第一源極金屬墊；並且其中，該第二柵極金屬墊的頂表面的區域大於該鈍化層的柵極鈍化開口。
  3. 如請求項2所述的用於製備多個功率半導體晶片的方法，其中，該晶圓還具有覆蓋該鈍化層的一聚醯亞胺層；其中形成該聚醯亞胺層的圖案，通過該鈍化層的一個或多個源極鈍化開口部分，使該第一源極金屬墊的頂面部分裸露出來，並且通過該鈍化層的柵極鈍化開口，使該第一柵極金屬墊的頂面部分裸露出來。
  4. 如請求項3所述的用於製備多個功率半導體晶片的方法，其中，該第二柵極金屬墊填充該第一柵極金屬墊上方的該柵極鈍化開口；並且其中該第二柵極金屬墊進一步延伸到該鈍化層的頂面和該聚醯亞胺層的頂面之上。
  5. 如請求項4所述的用於製備多個功率半導體晶片的方法，其中，該第一金屬層包括一個鋁層，電鍍該第二金屬層的步驟包括一個電鍍銅層的子步驟。
  6. 如請求項5所述的用於製備多個功率半導體晶片的方法，其中，該多個功率半導體元件中的每個該功率半導體元件還包括一個金屬-氧化物半導體場效應電晶體；並且 其中在該電鍍銅層的子步驟中的該第二柵極金屬墊，通過該第一柵極金屬墊電連接到該金屬-氧化物半導體場效應電晶體的一個柵極接觸區上。
  7. 一個功率半導體晶片，其中，包括： 一個半導體基材，包括一個功率半導體元件； 一個第一金屬層，覆蓋該半導體基材，該第一金屬層形成圖案，包括隔開的較大區域的一第一源極金屬墊和較小區域的一第一柵極金屬墊，該第一源極金屬墊電連接到該功率半導體元件的一個源極接觸區上，該第一柵極金屬墊電連接到該功率半導體元件的一個柵極接觸區上； 一個鈍化層，覆蓋該第一金屬層，該鈍化層形成圖案，通過該鈍化層的一個或多個源極鈍化開口，使該第一源極金屬墊的頂面部分裸露出來，並且通過該鈍化層的一個柵極鈍化開口，使該第一柵極金屬墊的頂面部分裸露出來，其中一個或多個源極鈍化開口中的每個開口都至少是柵極鈍化開口面積的十倍；以及 一個第二金屬層，覆蓋該鈍化層和該第一金屬層，該第二金屬層包括一個第二源極金屬墊和一個第二柵極金屬墊，被該第二源極金屬墊隔開，該第二源極金屬墊填充該鈍化層的一個或多個源極鈍化開口，並且電連接到該第一源極金屬墊，該第二柵極金屬墊填充該鈍化層的柵極鈍化開口，並且電連接到該第一柵極金屬墊； 其中該第二柵極金屬墊的頂面區域大於該鈍化層的柵極鈍化開口。
  8. 如請求項7所述的功率半導體晶片，其中，還包括覆蓋該鈍化層的一個聚醯亞胺層，該聚醯亞胺層形成圖案，通過該鈍化層的一個或多個源極鈍化開口，使該第一源極金屬墊的頂面部分裸露出來，並且通過該鈍化層的柵極鈍化開口，使該第一柵極金屬墊的頂面部分裸露出來。
  9. 如請求項8所述的功率半導體晶片，其中，該第一金屬層包括一個鋁層。
  10. 如請求項9所述的功率半導體晶片，其中，該第二金屬層包括一個銅層。
  11. 如請求項10所述的功率半導體晶片，其中，該鈍化層的柵極鈍化開口小於0.3mm×0.3mm，其中該第二柵極金屬墊的頂面面積大於0.3mm×0.3mm。
  12. 如請求項10所述的功率半導體晶片，其中，該功率半導體元件包括一個金屬-氧化物半導體場效應電晶體，並且其中該第二柵極金屬墊通過該第一柵極金屬墊電連接到該金屬-氧化物半導體場效應電晶體的柵極接觸區。
  13. 一種半導體封裝，其中，包括： 一個引線框； 一個半導體晶片，位於該引線框上，該半導體晶片包括： 一個半導體基材，包括一個功率半導體元件； 一個鋁層，覆蓋該半導體基材的正面，該鋁層形成圖案，包括隔開的較大面積的一第一源極金屬墊和較小面積的一第一柵極金屬墊，該第一源極金屬墊電連接到該功率半導體元件的源極接觸區，該第一柵極金屬墊電連接到該功率半導體元件的柵極接觸區； 一個鈍化層，覆蓋該鋁層； 一個聚醯亞胺層，在該鈍化層上方； 一個電鍍銅層；以及 一個背面金屬，位於與該半導體基材的正面相對的背面； 其中該鈍化層和該聚醯亞胺層形成圖案，通過一個或多個源極鈍化開口，使該第一源極金屬墊的頂面部分裸露出來，並且通過一個柵極鈍化開口，使該第一柵極金屬墊的頂面部分裸露出來； 其中該電鍍銅層包括一個第一源極金屬墊和一個第二柵極金屬墊，與該第二源極金屬墊隔開； 其中該第二源極金屬墊填充該鈍化層的一個或多個源極鈍化開口，並且電連接到該第一源極金屬墊上； 其中該第二柵極金屬墊填充該鈍化層的柵極鈍化開口，並且電連接到該第一柵極金屬墊上；並且 其中該第二柵極金屬墊的頂面面積大於該鈍化層的柵極鈍化開口。
  14. 如請求項13所述的半導體封裝，其中，該引線框包括相互隔開的一個晶片焊盤、一個柵極引線以及一個源極引線；並且其中該半導體晶片位於該晶片焊盤上，其該背部金屬化電連接到該晶片焊盤上。
  15. 如請求項14所述的半導體封裝，其中，一個柵極導電元件將該半導體晶片上的該第二柵極金屬墊電連接到該引線框的該柵極引線上；並且其中一個源極導電元件將該半導體晶片的該第二源極金屬墊電連接到該引線框的該源極引線上。
  16. 如請求項15所述的半導體封裝，其中，該柵極導電元件和該第二柵極金屬墊之間的接觸面積，大於通過柵極鈍化開口裸露的該第一柵極金屬墊的頂面面積。
  17. 請求項16所述的半導體封裝，其中，該柵極導電元件包括一個柵極夾片；並且其中該源極導電元件包括一個源極夾片。
  18. 如請求項13所述的半導體封裝，其中，該引線框包括相互隔開的一個源極基底、一個柵極基底以及一個漏極引線；其中該半導體晶片翻轉放置在該引線框上，該第二源極金屬墊電連接到該源極基底上，該第二柵極金屬墊電連接到該柵極基底上；並且其中一個漏極導電元件將該背面金屬化電連接到該漏極引線上。
  19. 如請求項18所述的半導體封裝，其中，該柵極基底和該第二柵極金屬墊之間的接觸面積，大於通過柵極鈍化開口裸露出來的該第一柵極金屬墊的頂面面積。
  20. 如請求項13所述的半導體封裝，其中，半導體元件包括一個金屬-氧化物半導體場效應電晶體，其中該第二柵極金屬墊通過該第一柵極金屬墊，電連接到該金屬-氧化物半導體場效應電晶體的柵極接觸區上。
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