TW202147594A - 攝像元件及攝像裝置 - Google Patents

攝像元件及攝像裝置 Download PDF

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Publication number
TW202147594A
TW202147594A TW110115511A TW110115511A TW202147594A TW 202147594 A TW202147594 A TW 202147594A TW 110115511 A TW110115511 A TW 110115511A TW 110115511 A TW110115511 A TW 110115511A TW 202147594 A TW202147594 A TW 202147594A
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TW
Taiwan
Prior art keywords
light
pixel
layer
imaging
semiconductor substrate
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TW110115511A
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English (en)
Chinese (zh)
Inventor
吉田遼人
熊谷至通
大澤尚幸
永田健悟
坂東雅史
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日商索尼半導體解決方案公司
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Publication of TW202147594A publication Critical patent/TW202147594A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW110115511A 2020-05-29 2021-04-29 攝像元件及攝像裝置 TW202147594A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-095062 2020-05-29
JP2020095062 2020-05-29

Publications (1)

Publication Number Publication Date
TW202147594A true TW202147594A (zh) 2021-12-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW110115511A TW202147594A (zh) 2020-05-29 2021-04-29 攝像元件及攝像裝置

Country Status (7)

Country Link
US (1) US12557415B2 (https=)
EP (1) EP4160685A4 (https=)
JP (1) JPWO2021241019A1 (https=)
KR (1) KR20230017768A (https=)
CN (1) CN115699314A (https=)
TW (1) TW202147594A (https=)
WO (1) WO2021241019A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI799057B (zh) * 2022-01-04 2023-04-11 力晶積成電子製造股份有限公司 影像感測器積體晶片及其形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI888385B (zh) * 2019-06-26 2025-07-01 日商索尼半導體解決方案公司 攝像裝置
JP7520867B2 (ja) * 2019-10-30 2024-07-23 ソニーグループ株式会社 光学式センサおよび光学式センサモジュール
US20250374694A1 (en) * 2022-01-26 2025-12-04 Sony Semiconductor Solutions Corporation Photodetection device
US20230299109A1 (en) * 2022-03-18 2023-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked image sensors and methods of manufacturing thereof

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JP2010118412A (ja) 2008-11-11 2010-05-27 Panasonic Corp 固体撮像装置及びその製造方法
JP2014053429A (ja) 2012-09-06 2014-03-20 Sony Corp 固体撮像装置、固体撮像装置を備えた電子機器、表示装置
JP2016001633A (ja) 2014-06-11 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
JP2016082133A (ja) * 2014-10-20 2016-05-16 ソニー株式会社 固体撮像素子及び電子機器
JP6581022B2 (ja) * 2015-03-20 2019-09-25 株式会社東芝 半導体発光デバイスおよび光半導体デバイス
US10103514B2 (en) 2015-03-20 2018-10-16 Kabushiki Kaisha Toshiba Optical semiconductor device and method for manufacturing the same
JP6791243B2 (ja) * 2016-03-31 2020-11-25 株式会社ニコン 撮像素子、及び、撮像装置
US11101305B2 (en) 2016-10-27 2021-08-24 Sony Semiconductor Solutions Corporation Imaging element and electronic device
JP2020095062A (ja) 2017-03-16 2020-06-18 ヤマハ株式会社 鍵盤装置
KR102490821B1 (ko) * 2018-01-23 2023-01-19 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2021168316A (ja) * 2018-07-13 2021-10-21 ソニーセミコンダクタソリューションズ株式会社 センサ素子および電子機器
JP7362198B2 (ja) 2018-07-18 2023-10-17 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI799057B (zh) * 2022-01-04 2023-04-11 力晶積成電子製造股份有限公司 影像感測器積體晶片及其形成方法
US12376406B2 (en) 2022-01-04 2025-07-29 Powerchip Semiconductor Manufacturing Corporation Image sensor having a reflective layer overlapping with image sensing element

Also Published As

Publication number Publication date
JPWO2021241019A1 (https=) 2021-12-02
EP4160685A1 (en) 2023-04-05
CN115699314A (zh) 2023-02-03
WO2021241019A1 (ja) 2021-12-02
EP4160685A4 (en) 2023-10-25
US12557415B2 (en) 2026-02-17
KR20230017768A (ko) 2023-02-06
US20230215889A1 (en) 2023-07-06

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