JPWO2021241019A1 - - Google Patents
Info
- Publication number
- JPWO2021241019A1 JPWO2021241019A1 JP2022527554A JP2022527554A JPWO2021241019A1 JP WO2021241019 A1 JPWO2021241019 A1 JP WO2021241019A1 JP 2022527554 A JP2022527554 A JP 2022527554A JP 2022527554 A JP2022527554 A JP 2022527554A JP WO2021241019 A1 JPWO2021241019 A1 JP WO2021241019A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/7795—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020095062 | 2020-05-29 | ||
| PCT/JP2021/014716 WO2021241019A1 (ja) | 2020-05-29 | 2021-04-07 | 撮像素子および撮像装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021241019A1 true JPWO2021241019A1 (https=) | 2021-12-02 |
Family
ID=78744315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022527554A Pending JPWO2021241019A1 (https=) | 2020-05-29 | 2021-04-07 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12557415B2 (https=) |
| EP (1) | EP4160685A4 (https=) |
| JP (1) | JPWO2021241019A1 (https=) |
| KR (1) | KR20230017768A (https=) |
| CN (1) | CN115699314A (https=) |
| TW (1) | TW202147594A (https=) |
| WO (1) | WO2021241019A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI888385B (zh) * | 2019-06-26 | 2025-07-01 | 日商索尼半導體解決方案公司 | 攝像裝置 |
| JP7520867B2 (ja) * | 2019-10-30 | 2024-07-23 | ソニーグループ株式会社 | 光学式センサおよび光学式センサモジュール |
| TWI799057B (zh) | 2022-01-04 | 2023-04-11 | 力晶積成電子製造股份有限公司 | 影像感測器積體晶片及其形成方法 |
| US20250374694A1 (en) * | 2022-01-26 | 2025-12-04 | Sony Semiconductor Solutions Corporation | Photodetection device |
| US20230299109A1 (en) * | 2022-03-18 | 2023-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked image sensors and methods of manufacturing thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118412A (ja) * | 2008-11-11 | 2010-05-27 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP2016001633A (ja) * | 2014-06-11 | 2016-01-07 | ソニー株式会社 | 固体撮像素子、および電子装置 |
| JP2016178293A (ja) * | 2015-03-20 | 2016-10-06 | 株式会社東芝 | 光半導体デバイスおよびその製造方法 |
| WO2018079296A1 (ja) * | 2016-10-27 | 2018-05-03 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014053429A (ja) | 2012-09-06 | 2014-03-20 | Sony Corp | 固体撮像装置、固体撮像装置を備えた電子機器、表示装置 |
| JP2016082133A (ja) * | 2014-10-20 | 2016-05-16 | ソニー株式会社 | 固体撮像素子及び電子機器 |
| US10103514B2 (en) | 2015-03-20 | 2018-10-16 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method for manufacturing the same |
| JP6791243B2 (ja) * | 2016-03-31 | 2020-11-25 | 株式会社ニコン | 撮像素子、及び、撮像装置 |
| JP2020095062A (ja) | 2017-03-16 | 2020-06-18 | ヤマハ株式会社 | 鍵盤装置 |
| KR102490821B1 (ko) * | 2018-01-23 | 2023-01-19 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| JP2021168316A (ja) * | 2018-07-13 | 2021-10-21 | ソニーセミコンダクタソリューションズ株式会社 | センサ素子および電子機器 |
| JP7362198B2 (ja) | 2018-07-18 | 2023-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、測距モジュール、および、電子機器 |
-
2021
- 2021-04-07 EP EP21812547.4A patent/EP4160685A4/en not_active Withdrawn
- 2021-04-07 WO PCT/JP2021/014716 patent/WO2021241019A1/ja not_active Ceased
- 2021-04-07 KR KR1020227038727A patent/KR20230017768A/ko active Pending
- 2021-04-07 CN CN202180036974.3A patent/CN115699314A/zh active Pending
- 2021-04-07 US US17/998,990 patent/US12557415B2/en active Active
- 2021-04-07 JP JP2022527554A patent/JPWO2021241019A1/ja active Pending
- 2021-04-29 TW TW110115511A patent/TW202147594A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118412A (ja) * | 2008-11-11 | 2010-05-27 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP2016001633A (ja) * | 2014-06-11 | 2016-01-07 | ソニー株式会社 | 固体撮像素子、および電子装置 |
| JP2016178293A (ja) * | 2015-03-20 | 2016-10-06 | 株式会社東芝 | 光半導体デバイスおよびその製造方法 |
| WO2018079296A1 (ja) * | 2016-10-27 | 2018-05-03 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4160685A1 (en) | 2023-04-05 |
| CN115699314A (zh) | 2023-02-03 |
| WO2021241019A1 (ja) | 2021-12-02 |
| EP4160685A4 (en) | 2023-10-25 |
| US12557415B2 (en) | 2026-02-17 |
| TW202147594A (zh) | 2021-12-16 |
| KR20230017768A (ko) | 2023-02-06 |
| US20230215889A1 (en) | 2023-07-06 |
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