TW202145474A - 半導體結構及其形成方法 - Google Patents
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Abstract
一種半導體結構包括第一基板、第一重分佈線墊以及第一接合墊。第一基板具有第一導電墊。第一重分佈線墊位於第一導電墊上,且第一重分佈線墊延伸至第一基板的頂面。第一接合墊位於第一重分佈線墊的第一部分上,其中第一重分佈線墊的第一部分與第一基板的頂面重疊。
Description
本揭露內容是有關於一種半導體結構以及形成半導體結構的方法。
隨著電子工業的快速發展,積體電路(IC)的發展已經實現了高效能與微型化。積體電路的材料與設計之技術進步已經產生了數代的積體電路,其中每一代都比前一代具有更小且更複雜的電路。隨著單一晶片上的電子元件的數量快速地增加,已將三維(3D)積體電路佈局或堆疊晶片設計用於某些半導體元件,以克服與二維(2D)佈局相關的特徵尺寸與密度限制。
在矽晶片的導電墊(也視為頂金屬)上執行測試製程(test process)以監測矽晶片的良率。然而,通常在測試製程與隨後的蝕刻製程中可能使導電墊的厚度減少,從而在導電墊上造成損壞。導電墊上的損壞可能導致導電墊斷裂的潛在風險,從而導致半導體元件的效能降低。
本揭露之一技術態樣為一種半導體結構。
根據本揭露一些實施方式,一種半導體結構包括第一基板、第一重分佈線墊以及第一接合墊。第一基板具有第一導電墊。第一重分佈線墊位於第一導電墊上,且第一重分佈線墊延伸至第一基板的頂面。第一接合墊位於第一重分佈線墊的第一部分上,其中第一重分佈線墊的第一部分與第一基板的頂面重疊。
在本揭露一些實施方式中,第一重分佈線墊的第一部分具有平坦頂面,且第一接合墊接觸平坦頂面。
在本揭露一些實施方式中,第一重分佈線墊更具有第二部分,第二部分鄰接第一部分且與第一導電墊重疊。第一接合墊與第一重分佈線墊的第二部分分隔。
在本揭露一些實施方式中,第一接合墊具有底部分及位於底部分上的頂部分。底部分在第一基板的頂面上的垂直投影區與第一導電墊的中央部分在第一基板的頂面上的垂直投影區分隔。
在本揭露一些實施方式中,半導體結構更包括位於第一基板上且包圍第一重分佈線墊的介電層。
在本揭露一些實施方式中,半導體結構更包括位於第一重分佈線墊上且包圍第一接合墊的介電層。
在本揭露一些實施方式中,半導體結構更包括位於第一基板上的第二基板。
在本揭露一些實施方式中,半導體結構更包括位於第一接合墊上的第二接合墊。
在本揭露一些實施方式中,半導體結構更包括位於第二基板與第二接合墊之間的第二重分佈線墊。
在本揭露一些實施方式中,第一接合墊與第二接合墊位於第一重分佈線墊與第二重分佈線墊之間。
在本揭露一些實施方式中,第一接合墊對齊於第二接合墊。
在本揭露一些實施方式中,半導體結構更包括包圍第二接合墊的介電層。
本揭露之另一技術態樣為一種形成半導體結構之方法。
根據本揭露一些實施方式,一種形成半導體結構之方法包括以下步驟。蝕刻第一基板,以形成開口,使得第一基板的第一導電墊通過開口而暴露。在第一導電墊上且延伸至第一基板的頂面上形成第一重分佈線墊。在第一重分佈線墊的第一部分上形成第一接合墊,其中第一重分佈線墊的第一部分與第一基板的頂面重疊。
在本揭露一些實施方式中,形成第一重分佈線墊被執行,使得第一重分佈線墊具有平坦頂面。形成第一接合墊被執行,使得第一接合墊接觸平坦頂面。
在本揭露一些實施方式中,形成半導體結構之方法更包括在形成第一重分佈線墊之前,在第一基板上形成介電層。
在本揭露一些實施方式中,形成半導體結構之方法更包括在形成第一接合墊之前,在第一重分佈線墊上形成介電層。
在本揭露一些實施方式中,形成半導體結構之方法更包括以下步驟。在第二基板上形成第二重分佈線墊。在第二重分佈線墊上形成第二接合墊。接合第二接合墊至第一接合墊,使得第二基板設置於第一基板上。
在本揭露一些實施方式中,形成半導體結構之方法更包括分別在第二基板與第二重分佈線墊上形成二介電層。
在本揭露一些實施方式中,接合第二接合墊至第一接合墊被執行,使得第一接合墊對齊於第二接合墊。
根據本揭露上述實施方式,由於第一接合墊位於與第一基板的頂面重疊之第一重分佈線墊的第一部分上,可抑制第一接合墊內不期望的空隙(void)之形成,從而改善第一接合墊的均勻性。如此一來,可以改善半導體結構的效能。
應當瞭解前面的一般說明和以下的詳細說明都僅是示例,並且旨在提供對本揭露的進一步解釋。
以下將以圖式揭露本揭露之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本揭露。也就是說,在本揭露部分實施方式中,這些實務上的細節是非必要的,因此不應用以限制本揭露。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。另外,為了便於讀者觀看,圖式中各元件的尺寸並非依實際比例繪示。
此外,諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係,如圖所示。應當理解,相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如,如果一個附圖中的裝置翻轉,則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此,示例性術語「下」可以包括「下」和「上」的取向,取決於附圖的特定取向。類似地,如果一個附圖中的裝置翻轉,則被描述為在其它元件「下方」或「下方」的元件將被定向為在其它元件「上方」。因此,示例性術語「下面」或「下面」可以包括上方和下方的取向。
第1圖繪示根據本揭露一些實施方式之半導體結構100的剖面圖。參照第1圖,半導體結構100包括第一基板110、第一重分佈線(redistribution line;RDL)墊120以及第一接合墊130。第一基板110具有第一導電墊112。第一重分佈線墊120設置在第一導電墊112上,並且延伸至第一基板110的頂面111。第一接合墊130設置在第一重分佈線墊120的第一部分122上,並且第一重分佈線墊120的第一部分122與第一基板110的頂面111重疊。第一重分佈線墊120的第一部分122可以被視為用於第一接合墊130的著陸墊(landing pad)。透過上述的配置,可抑制或避免第一接合墊130內不期望的空隙(void)之形成,從而改善第一接合墊130的均勻性。如此一來,可以改善半導體結構100的效能。
在一些實施方式中,第一基板110可以是矽基板。在一些其他的實施方式中,第一基板110可包括其他半導體元素,例如:鍺(germanium);或包括半導體化合物,例如:碳化矽(silicon carbide)、砷化鎵(gallium arsenic)、磷化鎵(gallium phosphide)、磷化銦(indium phosphide)、砷化銦(indium arsenic)、及/或銻化銦(indium antimonide);或其他半導體合金,例如:矽鍺(SiGe)、磷化砷鎵(GaAsP)、砷化銦鋁(AlInAs)、砷化鎵鋁(AlGaAs)、砷化銦鎵(GaInAs)、磷化銦鎵(GaInP)、及/或磷砷化銦鎵(GaInAsP),以及以上之任意組合。
第一重分佈線墊120可進一步具有第二部分124,其中第二部分124鄰接第一部分122並且與第一導電墊112重疊。第一接合墊130與第一重分佈線墊120的第二部分124分隔。換句話說,第一重分佈線墊120的第一部分122設置在第一基板110上,並且第一重分佈線墊120的第二部分124設置在第一基板110中。第一接合墊130接觸第一重分佈線墊120的第一部分122,而不接觸第一重分佈線墊120的第二部分124。在一些實施方式中,第一重分佈線墊120的第一部分122具有平坦頂面121,並且第一接合墊130接觸平坦頂面121。第一重分佈線墊120的平坦頂面121實質上平行於第一基板110的頂面111。在一些實施方式中,第一重分佈線墊120可以是由銅(Cu)、鋁(Al)或其他適當的導電材料製成。
第一接合墊130可具有底部分132以及位在底部分132上的頂部分134,其中底部分132接觸第一重分佈線墊120的第一部分122。在一些實施方式中,底部分132在第一基板110的頂面111上的垂直投影區與第一導電墊112的中央部分在第一基板110的頂面111上的垂直投影區分隔。舉例來說,底部分132在第一基板110的頂面111上的垂直投影區與第一導電墊112在第一基板110的頂面111上的垂直投影區部分地重疊。在其他的實施方式中,底部分132在第一基板110的頂面111上的垂直投影區與第一導電墊112在第一基板110的頂面111上的垂直投影區分隔。在一些實施方式中,第一接合墊130是混合接合墊(hybrid bond pad)。第一接合墊130可以由銅(Cu)或其他適當的導電材料製成。
在一些實施方式中,半導體結構100進一步包括位於第一基板110上且包圍第一重分佈線墊120的介電層140。介電層140可以由氧化矽(SiO2
)、氮化矽(SiN)、氧氮化矽(SiON)或其他適當的材料製成。在一些實施方式中,半導體結構100進一步包括在第一重分佈線墊120上且包圍第一接合墊130的介電層150。介電層150可以由氧化矽、氮化矽、氧氮化矽或其他適當的材料製成。在一些實施方式中,包圍第一重分佈線墊120的介電層140以及包圍第一接合墊130的介電層150可以由相同的材料製成。
在一些實施方式中,半導體結構100進一步包括第二基板160、第二重分佈線墊170以及第二接合墊180。第二基板160設置在第一基板110上,並且第二基板160具有第二導電墊162。第二接合墊180設置在第一接合墊130上。第二重分佈線墊170設置在第二基板160與第二接合墊180之間。此外,第二重分佈線墊170具有第一部分172以及與第一部分172鄰接且與第二導電墊162重疊的第二部分174。第二接合墊180可具有頂部分182以及位於頂部分182之下的底部分184,並且頂部分182接觸第二重分佈線墊170的第一部分172。
在一些實施方式中,半導體結構100進一步包括包圍第二重分佈線墊170的介電層190以及包圍第二接合墊180的介電層200。應理解到,第二基板160、第二重分佈線墊170、第二接合墊180、介電層190以及介電層200分別與上述的第一基板110、第一重分佈線墊120、第一接合墊130、介電層140以及介電層150之連接關係及材料類似,故在此不重複描述。
在一些實施方式中,第一接合墊130與第二接合墊180設置在第一重分佈線墊120與第二重分佈線墊170之間。換句話說,第一接合墊130與第二接合墊180之組合可從第一重分佈線墊120延伸至第二重分佈線墊170。第一接合墊130對齊於第二接合墊180,並且包圍第一接合墊130的介電層150接觸包圍第二接合墊180的介電層200。
第2圖、第3圖、第4圖、第5圖、第7圖與第8圖繪示根據本揭露一些實施方式在各個階段形成半導體結構100之方法的剖面圖。
參閱第2圖,第一導電墊112設置在第一基板110中。第一導電墊112可以由金屬或其他適當的導電材料製成。參閱第3圖,蝕刻第一基板110,以形成開口O,使得第一基板110的第一導電墊112通過開口O而暴露。
參閱第4圖,在第一基板110的第一導電墊112上執行測試製程(testing process)。舉例來說,可以在第一基板110的第一導電墊112上執行晶片探針(chip probing;CP)測試製程,以監測良率。
參閱第5圖與第6圖,第6圖繪示第5圖之一階段的半導體結構的佈局圖。換句話說,第5圖繪示沿著第6圖的線5-5的半導體結構的剖面圖。介電層140可以形成在第一基板110上。介電層140可以通過化學氣相沉積(CVD)、原子層沉積(ALD)或其他適當的方法形成。
此後,第一重分佈線墊120形成在第一導電墊112上,並且延伸至第一基板110的頂面111。舉例來說,形成第一重分佈線墊120的方法可以包括蝕刻介電層140,以形成開口,而後將導電材料填入開口中。在一些實施方式中,形成第一重分佈線墊120被執行,使得第一重分佈線墊120具有平坦頂面121。舉例來說,可以執行諸如化學機械研磨(CMP)製程的平坦化製程。
在一些實施方式中,第一重分佈線墊120可以由銅(Cu)製成。詳細來說,在形成第一重分佈線墊120之前,可以在第一導電墊112上形成阻障層與種子層,其中種子層共形地形成在阻障層上,並且第一重分佈線墊120形成在種子層。阻障層可以被配置為防止銅擴散,並且可以由鉭(Ta)、氮化鉭(TaN)、氮化鈦(TiN)或其他適當的材料製成。種子層可視為黏著層,並且包括銅合金。在一些其他的實施方式中,第一重分佈線墊120可以由鋁(Al)製成。詳細來說,在形成第一重分佈線墊120之前,可以在第一導電墊112上形成抗反射層,其中第一重分佈線墊120形成在前述的抗反射層上。抗反射層可以由鉭(Ta)、氮化鉭(TaN)、鈦(Ti)、氮化鈦(TiN)或其他適當的材料製成。
參閱第7圖,在形成第一重分佈線墊120之後,可在第一重分佈線墊120上形成介電層150。介電層150可以通過化學氣相沉積(CVD)、原子層沉積(ALD)或其他適當的方法形成。
此後,第一接合墊130形成在第一重分佈線墊120的第一部分122上,其中第一重分佈線墊120的第一部分122與第一基板110的頂面111重疊。舉例來說,形成第一接合墊130的方法可以包括蝕刻介電層150與介電層140的一部分,以形成開口,而後將導電材料填入開口中。前述的開口可以通過大馬士革(damascene)製程形成。在一些實施方式中,第一接合墊130具有位於介電層140中的一部分,並且其他部分位於介電層150中。在一些實施方式中,形成第一接合墊130被執行,使得第一接合墊130接觸第一重分佈線墊120的平坦頂面121。因為第一接合墊130形成在第一重分佈線墊120的平坦頂面121上,故在形成第一接合墊130時,可抑制或避免不期望的空隙形成於第一接合墊130中,從而改善第一接合墊130的均勻性。此外,第一重分佈線墊120的第一部分122可視為用於第一接合墊130的著陸墊,並且第一重分佈線墊120的第一部分122可有利於第一接合墊130接合在平坦的金屬(亦即,第一重分佈線墊120的第一部分122)上。舉例來說,相較於第一導電墊112形成第一接合墊130,在第一重分佈線墊120的第一部分122上形成第一接合墊130可以防止第一導電墊112破裂的潛在風險,因為可能在第一導電墊112上執行額外的蝕刻製程,此可能會嚴重損壞第一導電墊112。
在一些實施方式中,第一接合墊130可以由銅製成。詳細來說,在形成第一接合墊130之前,可以在第一重分佈線墊120上形成阻障層與種子層,其中種子層共形地形成在阻障層上方,並且第一接合墊130形成在種子層上。阻障層可以被配置為防止銅擴散,並且可以由鉭(Ta)、氮化鉭(TaN)、氮化鈦(TiN)或其他適當的材料製成。種子層可視為黏著層,並且可包括銅合金。
參閱第7圖與第8圖,第8圖的結構類似於第7圖的結構。在第二基板160上形成第二重分佈線墊170,而後在第二重分佈線墊170上形成第二接合墊180。在一些實施方式中,在第二基板160上形成介電層190,並且在第二重分佈線墊170上形成介電層200。應理解到,形成第二重分佈線墊170、第二接合墊180、介電層190以及介電層200之方法分別類似於形成第一重分佈線墊120、第一接合墊130、介電層140以及介電層150之方法,故在此不重複描述。
回到第1圖,而後將第8圖的第二接合墊180接合至第一接合墊130,使得第二基板160設置在第一基板110上。在一些實施方式中,將第二接合墊180接合至第一接合墊130之方法可以包括混合接合(hybrid bonding)製程。混合接合製程涉及至少兩種類型的接合,包括金屬對金屬(metal-to-metal)接合以及非金屬對非金屬(non-metal-to-non-metal)接合。舉例來說,第一接合墊130與第二接合墊180可通過執行金屬對金屬接合而接合,並且介電層150與介電層200可通過執行非金屬對非金屬接合而接合。如第1圖所示,第一接合墊130與第二接合墊180之組合在第一接合墊130與第二接合墊180之間具有金屬接合界面BI,但是由於回流(reflowing)製程,在介電層150與介電層200之間可能沒有明顯的非金屬界面。在一些實施方式中,第一接合墊130對齊(對準)第二接合墊180。如此一來,可以獲得如第1圖所示的半導體結構100(3DIC堆疊結構)。
雖然本揭露已經將實施方式詳細地揭露如上,然而其他的實施方式也是可能的,並非用以限定本揭露。因此,所附之權利要求的精神及其範圍不應限於本揭露實施方式之說明。
本領域任何熟習此技藝者,在不脫離本揭露之精神和範圍內,當可作各種之改變或替換,因此所有的這些改變或替換都應涵蓋於本揭露所附權利要求的保護範圍之內。
100:半導體結構
110:第一基板
111:頂面
112:第一導電墊
120:第一重分佈線墊
121:平坦頂面
122:第一部分
124:第二部分
130:第一接合墊
132:底部分
134:頂部分
140:介電層
150:介電層
160:第二基板
162:第二導電墊
170:第二重分佈線墊
172:第一部分
174:第二部分
180:第二接合墊
182:頂部分
184:底部分
190:介電層
200:介電層
BI:金屬接合界面
O:開口
5-5:線
本揭露之態樣可從以下實施方式的詳細說明及隨附的圖式理解。
第1圖繪示根據本揭露一些實施方式之半導體結構的剖面圖。
第2圖、第3圖、第4圖、第5圖、第7圖與第8圖繪示根據本揭露一些實施方式在各個階段形成半導體結構之方法的剖面圖。
第6圖繪示第5圖之一階段的半導體結構的佈局圖。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
100:半導體結構
110:基板
111:頂面
112:第一導電墊
120:第一重分佈線墊
121:平坦頂面
122:第一部分
124:第二部分
130:第一接合墊
132:底部分
134:頂部分
140:介電層
150:介電層
160:第二基板
162:第二導電墊
170:第二重分佈線墊
172:第一部分
174:第二部分
180:第二接合墊
182:頂部分
184:底部分
190:介電層
200:介電層
BI:金屬接合界面
Claims (19)
- 一種半導體結構,包含: 一第一基板,具有一第一導電墊; 一第一重分佈線墊,位於該第一導電墊上,且該第一重分佈線墊延伸至該第一基板的一頂面;以及 一第一接合墊,位於該第一重分佈線墊的一第一部分上,其中該第一重分佈線墊的該第一部分與該第一基板的該頂面重疊。
- 如請求項1所述之半導體結構,其中該第一重分佈線墊的該第一部分具有一平坦頂面,且該第一接合墊接觸該平坦頂面。
- 如請求項1所述之半導體結構,其中該第一重分佈線墊更具有一第二部分,該第二部分鄰接該第一部分且與該第一導電墊重疊,以及該第一接合墊與該第一重分佈線墊的該第二部分分隔。
- 如請求項1所述之半導體結構,其中該第一接合墊具有一底部分及位於該底部分上的一頂部分,以及該底部分在該第一基板的該頂面上的一垂直投影區與該第一導電墊的一中央部分在該第一基板的該頂面上的一垂直投影區分隔。
- 如請求項1所述之半導體結構,更包含: 一介電層,位於該第一基板上且包圍該第一重分佈線墊。
- 如請求項1所述之半導體結構,更包含: 一介電層,位於該第一重分佈線墊上且包圍該第一接合墊。
- 如請求項1所述之半導體結構,更包含: 一第二基板,位於該第一基板上。
- 如請求項7所述之半導體結構,更包含: 一第二接合墊,位於該第一接合墊上。
- 如請求項8所述之半導體結構,更包含: 一第二重分佈線墊,位於該第二基板與該第二接合墊之間。
- 如請求項9所述之半導體結構,其中該第一接合墊與該第二接合墊位於該第一重分佈線墊與該第二重分佈線墊之間。
- 如請求項8所述之半導體結構,其中該第一接合墊對齊於該第二接合墊。
- 如請求項8所述之半導體結構,更包含: 一介電層,包圍該第二接合墊。
- 一種形成半導體結構之方法,包含: 蝕刻一第一基板,以形成一開口,使得該第一基板的一第一導電墊通過該開口而暴露; 形成一第一重分佈線墊,於該第一導電墊上且延伸至該第一基板的一頂面;以及 形成一第一接合墊,於該第一重分佈線墊的一第一部分上,其中該第一重分佈線墊的該第一部分與該第一基板的該頂面重疊。
- 如請求項13所述之形成半導體結構之方法,其中形成該第一重分佈線墊被執行,使得該第一重分佈線墊具有一平坦頂面,以及形成該第一接合墊被執行,使得該第一接合墊接觸該平坦頂面。
- 如請求項13所述之形成半導體結構之方法,更包含: 在形成該第一重分佈線墊之前,在該第一基板上形成一介電層。
- 如請求項13所述之形成半導體結構之方法,更包含: 在形成該第一接合墊之前,在該第一重分佈線墊上形成一介電層。
- 如請求項13所述之形成半導體結構之方法,更包含: 形成一第二重分佈線墊,於一第二基板上; 形成一第二接合墊,於該第二重分佈線墊上;以及 接合該第二接合墊至該第一接合墊,使得該第二基板設置於該第一基板上。
- 如請求項17所述之形成半導體結構之方法,更包含: 分別形成二介電層,於該第二基板與該第二重分佈線墊上。
- 如請求項18所述之形成半導體結構之方法,其中接合該第二接合墊至該第一接合墊被執行,使得該第一接合墊對齊於該第二接合墊。
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US16/882,561 US20210366852A1 (en) | 2020-05-25 | 2020-05-25 | Semiconductor structure and method of forming the same |
US16/882,561 | 2020-05-25 |
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KR100475716B1 (ko) * | 2002-08-13 | 2005-03-10 | 매그나칩 반도체 유한회사 | 복합 반도체 장치의 멀티 반도체 기판의 적층 구조 및 그방법 |
US20080246152A1 (en) * | 2007-04-04 | 2008-10-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with bonding pad |
US7829450B2 (en) * | 2007-11-07 | 2010-11-09 | Infineon Technologies Ag | Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element |
US8343809B2 (en) * | 2010-03-15 | 2013-01-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming repassivation layer with reduced opening to contact pad of semiconductor die |
US9806042B2 (en) * | 2012-04-16 | 2017-10-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strain reduced structure for IC packaging |
US9293437B2 (en) * | 2014-02-20 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Functional block stacked 3DIC and method of making same |
WO2015199030A1 (ja) * | 2014-06-26 | 2015-12-30 | 凸版印刷株式会社 | 配線基板、半導体装置及び半導体装置の製造方法 |
TWI607539B (zh) * | 2015-02-16 | 2017-12-01 | 精材科技股份有限公司 | 晶片封裝體及其製造方法 |
US10217716B2 (en) * | 2016-09-12 | 2019-02-26 | Mediatek Inc. | Semiconductor package and method for fabricating the same |
US10269773B1 (en) * | 2017-09-29 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packages and methods of forming the same |
US10573602B2 (en) * | 2018-06-22 | 2020-02-25 | Nanya Technology Corporation | Semiconductor device and method of forming the same |
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US20210366852A1 (en) | 2021-11-25 |
CN113725184A (zh) | 2021-11-30 |
US20220102304A1 (en) | 2022-03-31 |
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