TW202135315A - 半導體裝置及具有半導體裝置的半導體系統 - Google Patents

半導體裝置及具有半導體裝置的半導體系統 Download PDF

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Publication number
TW202135315A
TW202135315A TW109141112A TW109141112A TW202135315A TW 202135315 A TW202135315 A TW 202135315A TW 109141112 A TW109141112 A TW 109141112A TW 109141112 A TW109141112 A TW 109141112A TW 202135315 A TW202135315 A TW 202135315A
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TW
Taiwan
Prior art keywords
semiconductor device
oxide film
aforementioned
resistance oxide
resistance
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TW109141112A
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English (en)
Chinese (zh)
Inventor
杉本雅裕
樋口安史
Original Assignee
日商Ｆｌｏｓｆｉａ股份有限公司
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Application filed by 日商Ｆｌｏｓｆｉａ股份有限公司 filed Critical 日商Ｆｌｏｓｆｉａ股份有限公司
Publication of TW202135315A publication Critical patent/TW202135315A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW109141112A 2019-11-29 2020-11-24 半導體裝置及具有半導體裝置的半導體系統 TW202135315A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019217101 2019-11-29
JP2019-217100 2019-11-29
JP2019-217101 2019-11-29
JP2019217100 2019-11-29

Publications (1)

Publication Number Publication Date
TW202135315A true TW202135315A (zh) 2021-09-16

Family

ID=76130218

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109141112A TW202135315A (zh) 2019-11-29 2020-11-24 半導體裝置及具有半導體裝置的半導體系統

Country Status (5)

Country Link
US (1) US20220293740A1 (https=)
JP (1) JP7733284B2 (https=)
CN (1) CN114747021B (https=)
TW (1) TW202135315A (https=)
WO (1) WO2021106809A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021157719A1 (ja) * 2020-02-07 2021-08-12 株式会社Flosfia 半導体素子および半導体装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
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KR20040077813A (ko) * 2002-02-19 2004-09-06 호야 가부시키가이샤 전계효과트랜지스터형 발광소자
JP5105044B2 (ja) * 2006-05-09 2012-12-19 株式会社ブリヂストン 酸化物トランジスタ及びその製造方法
JP2008226907A (ja) * 2007-03-08 2008-09-25 Ritsumeikan 窒化物半導体積層構造およびその形成方法、ならびに窒化物半導体素子およびその製造方法
US20100295042A1 (en) * 2008-01-23 2010-11-25 Idemitsu Kosan Co., Ltd. Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device
KR101932576B1 (ko) * 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2012104568A (ja) * 2010-11-08 2012-05-31 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP5948581B2 (ja) * 2011-09-08 2016-07-06 株式会社Flosfia Ｇａ２Ｏ３系半導体素子
US20140217470A1 (en) * 2011-09-08 2014-08-07 Tamura Corporation Ga2O3 SEMICONDUCTOR ELEMENT
CN103022149B (zh) * 2012-12-14 2015-06-10 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及制造方法和显示器件
JP5536920B1 (ja) * 2013-03-04 2014-07-02 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板、及びその製造方法
KR102089314B1 (ko) * 2013-05-14 2020-04-14 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
JP6284140B2 (ja) * 2013-06-17 2018-02-28 株式会社タムラ製作所 Ｇａ２Ｏ３系半導体素子
EP2942804B1 (en) * 2014-05-08 2017-07-12 Flosfia Inc. Crystalline multilayer structure and semiconductor device
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
JP2017128492A (ja) * 2016-01-15 2017-07-27 株式会社Flosfia 結晶性酸化物膜
JP7008293B2 (ja) * 2017-04-27 2022-01-25 国立研究開発法人情報通信研究機構 Ｇａ２Ｏ３系半導体素子
JP2019102652A (ja) * 2017-12-04 2019-06-24 三菱電機株式会社 薄膜トランジスタ基板および薄膜トランジスタ基板の製造方法
JP6618216B2 (ja) * 2018-10-11 2019-12-11 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
WO2020204006A1 (ja) * 2019-03-29 2020-10-08 株式会社Flosfia 結晶、結晶性酸化物半導体、結晶性酸化物半導体を含む半導体膜、結晶および／または半導体膜を含む半導体装置および半導体装置を含むシステム
US11380763B2 (en) * 2019-04-29 2022-07-05 Arizona Board Of Regents On Behalf Of Arizona State University Contact structures for n-type diamond
JPWO2021106811A1 (https=) * 2019-11-29 2021-06-03
WO2021106810A1 (ja) * 2019-11-29 2021-06-03 株式会社Flosfia 半導体装置および半導体システム

Also Published As

Publication number Publication date
JPWO2021106809A1 (https=) 2021-06-03
WO2021106809A1 (ja) 2021-06-03
CN114747021B (zh) 2026-03-17
CN114747021A (zh) 2022-07-12
JP7733284B2 (ja) 2025-09-03
US20220293740A1 (en) 2022-09-15

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