TW202135277A - 系統級封裝模組 - Google Patents
系統級封裝模組 Download PDFInfo
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- TW202135277A TW202135277A TW109120692A TW109120692A TW202135277A TW 202135277 A TW202135277 A TW 202135277A TW 109120692 A TW109120692 A TW 109120692A TW 109120692 A TW109120692 A TW 109120692A TW 202135277 A TW202135277 A TW 202135277A
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Abstract
一種系統級封裝模組包括:基板;特殊應用積體電路(ASIC)晶片,位於基板上;第一晶圓級封裝(WLP)記憶體,位於基板上且在平行於基板的上表面的第一方向上與特殊應用積體電路晶片間隔開;以及第二晶圓級封裝記憶體,位於基板上且在與第一方向相反的方向上與特殊應用積體電路晶片間隔開。
Description
本文中闡述的發明概念的實施例是有關於半導體封裝,且更具體而言是有關於提供改善的可靠性及改善的訊號完整性的系統級封裝模組。
系統級封裝(system-in-package,SiP)可在一個半導體封裝中包括處理器及記憶體,以實施一個系統。系統級封裝已因顯著減小系統大小的優點而被引入並用於各個領域中。
依據設置於系統級封裝內的組件的類型而定,系統級封裝的效能及可靠性可能會存在大的差異。因此,對能夠進一步改善系統級封裝的效能及可靠性的系統級封裝實施方案的研究一直是人們所期望的。
本發明概念的實施例提供一種提供改善的可靠性及訊號完整性的系統級封裝模組。
根據示例性實施例,一種系統級封裝模組包括:基板;特殊應用積體電路(application specific integrated circuit,ASIC)晶片,位於所述基板上;第一晶圓級封裝(wafer level package,WLP)記憶體,位於所述基板上且在平行於所述基板的上表面的第一方向上與所述ASIC晶片間隔開;以及第二WLP記憶體,位於所述基板上且在與所述第一方向相反的方向上與所述ASIC晶片間隔開。
根據示例性實施例,一種系統級封裝模組包括:基板;特殊應用積體電路(ASIC)晶片,位於所述基板上;第一晶圓級封裝(WLP)記憶體,位於所述基板上且在平行於所述基板的上表面的第一方向上與所述ASIC晶片間隔開;以及第二WLP記憶體,位於所述基板上且在與所述第一方向相反的方向上與所述ASIC晶片間隔開。所述ASIC晶片包括:ASIC基板;邏輯晶片,位於所述ASIC基板上;以及記憶體晶片,堆疊於所述邏輯晶片上。
根據示例性實施例,一種系統級封裝模組包括:基板;特殊應用積體電路(ASIC)晶片,經由焊料凸塊位於所述基板上;第一扇入型晶圓級封裝(fan-in wafer level package,FI-WLP)記憶體,在第一方向上與所述ASIC晶片間隔開且經由第一記憶體焊料球安裝於所述基板上,所述第一方向平行於所述基板的上表面;第二FI-WLP記憶體,在與所述第一方向相反的方向上與所述ASIC晶片間隔開且經由第二記憶體焊料球安裝於所述基板上;第三FI-WLP記憶體,在第二方向上與所述ASIC晶片間隔開且安裝於所述基板上,所述第二方向垂直於所述第一方向且平行於所述基板的所述上表面;第四FI-WLP記憶體,在與所述第二方向相反的方向上與所述ASIC晶片間隔開且安裝於所述基板上;焊料球,設置於所述基板的底表面上且電性連接至所述ASIC晶片;以及模製件,環繞所述基板、所述ASIC晶片、所述第一FI-WLP記憶體、所述第二FI-WLP記憶體、所述第三FI-WLP記憶體及所述第四FI-WLP記憶體。所述第一FI-WLP記憶體與所述ASIC晶片之間的距離小於或等於5毫米,所述第二FI-WLP記憶體與所述ASIC晶片之間的距離小於或等於5毫米,所述第三FI-WLP記憶體與所述ASIC晶片之間的距離小於或等於5毫米,且所述第四FI-WLP記憶體與所述ASIC晶片之間的距離小於或等於5毫米。
在下文中,將清楚且詳細地闡述本發明概念的實施例,以使熟習此項技術者可輕易地施行本發明概念。
圖1是示出根據本發明概念的實施例的系統級封裝模組100的透視圖。圖2是系統級封裝模組100的與第二方向及第三方向對應的平面的剖視圖。
參照圖1及圖2,系統級封裝模組100可包括基板110,基板110位於由第一方向與垂直於第一方向的第二方向形成的平面上。基板110可包括印刷電路板(printed circuit board,PCB)。
在基板110上(例如,在第三方向的上表面上)可設置有特殊應用積體電路(ASIC)晶片120。ASIC晶片120可為經由焊料凸塊電性連接至並安裝於基板110上的倒裝晶片。所述安裝可包括將ASIC晶片120在實體上排列(及固定)於基板110上,且使ASIC晶片120經由焊料凸塊與基板110電性連接。舉例而言,可藉由用於製造ASIC晶片120的製程(例如,包括沈積、遮罩或蝕刻)來製造焊料凸塊。
在基板110上(例如,在第三方向的上表面上)可設置有晶圓級封裝(WLP)記憶體130。舉例而言,WLP記憶體130可包括扇入型WLP(FI-WLP)記憶體或扇出型WLP(fan-out WLP,FO-WLP)記憶體。
在一些示例性實施例中,可假設WLP記憶體130是FI-WLP記憶體。因此,以下將提及FI-WLP記憶體130。然而,本發明概念的技術構想可等同地應用於FO-WLP記憶體。亦即,在以下的說明中,FI-WLP記憶體130可等同地替換為FO-WLP記憶體130。
FI-WLP記憶體130可以環繞ASIC晶片120的形式設置。FI-WLP記憶體130可包括第一FI-WLP記憶體131、第二FI-WLP記憶體132、第三FI-WLP記憶體133及第四FI-WLP記憶體134。
舉例而言,第一FI-WLP記憶體131可設置於ASIC晶片120的第一方向的側表面上。第二FI-WLP記憶體132可設置於ASIC晶片120的與第一方向相反的方向的側表面上。第三FI-WLP記憶體133可設置於ASIC晶片120的第二方向的側表面上。第四FI-WLP記憶體134可設置於ASIC晶片120的與第二方向相反的方向的側表面上。
FI-WLP記憶體130可經由記憶體焊料球MSB電性連接至基板110。可在完成FI-WLP記憶體130的處理之後附接記憶體焊料球MSB。舉例而言,已通過高頻測試(high frequency test,HFT)的FI-WLP記憶體130可用作系統級封裝模組100的組件。
高頻測試(HFT)可為檢查記憶體速度的測試。當每一記憶體呈晶片(或晶粒)形式時,可不執行高頻測試(HFT),但當記憶體呈封裝形式時,可執行高頻測試。
亦即,當記憶體晶片用作系統級封裝模組中的組件時,記憶體晶片可能未通過高頻測試(HFT)。當記憶體晶片用作系統級封裝模組的組件時,記憶體晶片可能不滿足目標速度(或效能),且系統級封裝模組的效能可能會劣化。
根據本發明概念的示例性實施例的系統級封裝模組100包括通過高頻測試(HFT)的FI-WLP記憶體130作為組件。因此,確保了FI-WLP記憶體130的效能,且可確保系統級封裝模組100的效能。
在基板110上(例如,在第三方向的上表面上)可設置有模製件140以環繞ASIC晶片120及FI-WLP記憶體130。模製件140可保護ASIC晶片120及FI-WLP記憶體130免受外部刺激及衝擊。
在基板110下方(例如,在與第三方向相反的方向的下表面上)可設置有焊料球150。焊料球150可電性連接至基板110。另外,焊料球150可將系統級封裝模組100所附接至的外部裝置電性連接至系統級封裝模組100內的組件。
舉例而言,基板110可包括以下中的至少一者:將FI-WLP記憶體130中的至少一者電性連接至焊料球150中的至少一者的第一電性連接件EC1、將ASIC晶片120電性連接至焊料球150中的至少一者的第二電性連接件EC2及將ASIC晶片120與FI-WLP記憶體130電性連接至彼此的第三電性連接件EC3。第一電性連接件EC1、第二電性連接件EC2或第三電性連接件EC3可包括基板110的金屬配線。
舉例而言,ASIC晶片120可包括圖形處理單元(graphic processing unit,GPU)或神經處理單元(neural processing unit,NPU)。FI-WLP記憶體130可包括由ASIC晶片120用來執行操作的動態隨機存取記憶體(dynamic random access memory,DRAM)。FI-WLP記憶體130可包括圖形雙倍資料速率(graphic double data rate,GDDR)DRAM或低功率雙倍資料速率(low power double data rate,LPDDR)DRAM。
FI-WLP記憶體130具有較普通封裝(例如,精細球柵陣列(FBGA)封裝)的大小小的大小。FI-WLP記憶體130具有與記憶體晶片的大小相似的大小。由於FI-WLP記憶體130被用作系統級封裝模組100的組件,因此相較於使用FBGA封裝記憶體時,FI-WLP記憶體130與ASIC晶片120之間的距離(例如第一距離L1、第二距離L2、第三距離L3或第四距離L4)可縮短。
隨著FI-WLP記憶體130與ASIC晶片120之間的距離縮短,將FI-WLP記憶體130電性連接至ASIC晶片120的路徑的長度可縮短。因此,系統級封裝模組100的訊號完整性可得到改善且系統級封裝模組100的效能及可靠性可得到改善。
在圖1及圖2中,已闡述了其中在ASIC晶片120的四個側表面上皆設置有FI-WLP記憶體130的示例性實施例。然而,FI-WLP記憶體130可對稱地設置於ASIC晶片120的兩個側表面處。舉例而言,當FI-WLP記憶體130的數目減少時,FI-WLP記憶體130可對稱地設置於ASIC晶片120的所述兩個側表面處。
舉例而言,在圖1及圖2中,示出了FI-WLP記憶體130、記憶體焊料球MSB及焊料球150的具體數目。然而,可不受限制地改變FI-WLP記憶體130、記憶體焊料球MSB及焊料球150的數目。
圖3示出FI-WLP記憶體13x的示例性剖視圖。參照圖1及圖3,FI-WLP記憶體13x包括記憶體晶片MD、設置於記憶體晶片MD下方的記憶體重佈線層MRDL、設置於記憶體重佈線層MRDL下方的記憶體焊料球MSB以及環繞記憶體晶片MD、記憶體重佈線層MRDL及記憶體焊料球MSB的一部分的記憶體模製件MM。
記憶體重佈線層MRDL可包括將記憶體焊料球MSB電性連接至記憶體晶片MD的第四電性連接件EC4。FI-WLP記憶體13x可為基於以下結構的模製WLP(molded WLP,mWLP):在所述結構中,記憶體模製件MM局部地環繞記憶體焊料球MSB。
圖4示出FI-WLP記憶體13x的球分布圖13x_BM的實例。舉例而言,球分布圖13x_BM亦可被稱為球輸出(ball out)。參照圖1、圖3及圖4,由於FI-WLP記憶體13x用於系統級封裝模組100中,因此FI-WLP記憶體13x可不遵循基於典型DRAM標準的球分布圖,而是可具有客製的球分布圖。
舉例而言,FI-WLP記憶體13x的球分布圖13x_BM可被配置成改善系統級封裝模組100的效能或可靠性。FI-WLP記憶體13x的球分布圖13x_BM可被劃分成第一區R1、第二區R2及第三區R3。
如第一箭頭A1所指示,第一區R1可最靠近ASIC晶片120。如第二箭頭A2所指示,第三區R3可距ASIC晶片120最遠。第二區R2可位於第一區R1與第三區R3之間。區R1至R3的大小可相等或不相等,且可為例如矩形或者具有非線性邊界。
舉例而言,當FI-WLP記憶體13x是第一FI-WLP記憶體131中的一者時,第一箭頭A1可對應於與第一方向相反的方向。當FI-WLP記憶體13x是第二FI-WLP記憶體132中的一者時,第一箭頭A1可對應於第一方向。當FI-WLP記憶體13x是第三FI-WLP記憶體133中的一者時,第一箭頭A1可對應於與第二方向相反的方向。當FI-WLP記憶體13x是第四FI-WLP記憶體134中的一者時,第一箭頭A1可對應於第二方向。
最靠近ASIC晶片120的第一區R1的記憶體焊料球可載送在FI-WLP記憶體13x與ASIC晶片120進行通訊的訊號之中在高電平(例如,正電平)與低電平(例如,地電壓)之間雙態觸變(轉換)得最快的訊號。舉例而言,球分布圖13x_BM可被配置成使得載送資料輸入及輸出訊號DQ、時脈訊號CK及/或資料選通訊號DQS的記憶體焊料球能夠設置於第一區R1中。
距ASIC晶片120最遠的第三區R3的記憶體焊料球可接收不在高電平與低電平之間轉換的電壓輸入VI。舉例而言,球分布圖13x_BM可被配置成使得接收供電電壓VDD、地電壓VSS、輸入及輸出電源電壓VDDQ、輸入及輸出地電壓VSSQ及/或高電壓VPP的記憶體焊料球能夠設置於第三區R3中。
第二區R2的記憶體焊料球可載送較第一區R1的訊號在高電平與低電平之間轉換得慢的訊號。舉例而言,球分布圖13x_BM可被配置成使得載送命令CMD、位址ADDR及/或控制訊號CTRL的記憶體焊料球能夠設置於第二區R2中。
命令CMD可包括列位址選通訊號RAS、行位址選通訊號CAS、寫入賦能訊號WE及啟動訊號ACT中的至少一者。位址ADDR可包括晶片辨識符CID、記憶庫群組位址BG、記憶庫位址BA及位址A0至A17中的至少一者。
控制訊號CTRL可包括時脈賦能訊號CKE、晶片選擇訊號CS、晶粒上終止訊號ODT、資料遮罩訊號(data mask signal)DM、資料遮罩反相訊號DMI、資料匯流排反相訊號DBI、自動預充電訊號AP、突發突變訊號(burst chop signal)BC、重置訊號RESET及警示訊號ALERT中的至少一者。
作為另一實例,命令CMD及位址ADDR可經由第二區R2的共用焊料球進行載送且可作為例如CA0至CA6的訊號進行載送。
如參照圖4所述,當對最快雙態觸變訊號進行載送的記憶體焊料球設置於第一區R1中時,基板110上的用於在FI-WLP記憶體13x與ASIC晶片120之間傳達最快雙態觸變訊號的路徑短於基板110上的用於傳達其他訊號的路徑。因此,可進一步改善系統級封裝模組100的訊號完整性。
舉例而言,在第二區R2的訊號之中,對雙態觸變得較快的位址訊號ADDR及命令訊號CMD進行載送的記憶體焊料球可被設置成較載送控制訊號CTRL的記憶體焊料球更靠近ASIC晶片120。另外,接收電壓輸入VI的記憶體焊料球可設置於第一區R1的記憶體焊料球與第二區R2的記憶體焊料球之間,而非集中於並設置於第三區R3中,藉此提供減少訊號之間的干擾的電性屏蔽。
圖5示出FI-WLP記憶體13x的組件的排列分布圖13x_AM的實例。參照圖1、圖3、圖4及圖5,如參照圖4所述,FI-WLP記憶體13x的排列分布圖13x_AM可具有最靠近ASIC晶片120的第一區R1、距ASIC晶片120最遠的第三區R3以及位於第一區R1與第三區R3之間的第二區R2。
在第一區R1中可設置有將訊號傳達至ASIC晶片120的實體電路PHY。實體電路PHY可被配置成向ASIC晶片120傳達16個資料輸入及輸出訊號(×16)。
在第三區R3中可設置有核心電路CORE(例如,記憶體胞元)。在第二區R2中可設置有對核心電路CORE進行存取且與實體電路PHY進行通訊的周邊電路PERI。作為另一實例,在第二區R2及第三區R3中可混合有核心電路CORE與周邊電路PERI。
如參照圖5所述,當實體電路PHY設置於第一區R1中時,記憶體重佈線層MRDL上的用於在FI-WLP記憶體13x與ASIC晶片120之間傳達最快雙態觸變訊號的路徑短於記憶體重佈線層MRDL上的用於傳達其他訊號的路徑。因此,可進一步改善系統級封裝模組100的訊號完整性。
圖6示出ASIC晶片120的示例性剖視圖。參照圖1及圖6,ASIC晶片120可包括ASIC晶片主體ADB、設置於ASIC晶片主體ADB下方的ASIC重佈線層ARDL以及設置於ASIC重佈線層ARDL下方的ASIC焊料凸塊ASB。
ASIC重佈線層ARDL可包括將ASIC焊料凸塊ASB電性連接至ASIC晶片主體ADB的第五電性連接件EC5。舉例而言,ASIC晶片主體ADB可採用執行邏輯操作的邏輯組件與記憶體組件(例如,SRAM組件)的混合組件實施。
圖7示出ASIC晶片120的球分布圖120_BM的實例。舉例而言,球分布圖120_BM亦可被稱為球輸出。參照圖1、圖6及圖7,由於ASIC晶片120用於系統級封裝模組100中,因此ASIC晶片120可不遵循基於典型DRAM標準的球分布圖,而是可具有客製的球分布圖。
舉例而言,ASIC晶片120的球分布圖120_BM可被配置成改善系統級封裝模組100的效能或可靠性。ASIC晶片120的球分布圖120_BM可被劃分成第五區R5與第六區R6。第五區R5可為內側區,且第六區R6可為外側區。外側區可為例如矩形形狀或圓形形狀,但並非僅限於此,其餘的區是內側區。
在ASIC晶片120的ASIC焊料凸塊ASB之中,FI-WLP記憶體130與第六區R6的ASIC焊料凸塊之間的距離短於FI-WLP記憶體130與第五區R5的ASIC焊料凸塊之間的距離。因此,用於使記憶體通訊MEM_COM將訊號傳達至FI-WLP記憶體130的ASIC焊料凸塊可設置於第六區R6中。用於使外部通訊EX_COM將訊號傳達至外部裝置的ASIC焊料凸塊可設置於第五區R5中。
如參照圖4所述,在第六區R6中,對在高電平與低電平之間雙態觸變得最快的訊號(例如資料輸入及輸出訊號DQ、時脈訊號CK或資料選通訊號DQS)進行載送的ASIC焊料凸塊可較其他ASIC焊料凸塊更靠近外部。另外,向FI-WLP記憶體130供應電壓的ASIC焊料凸塊可相鄰於第五區R5設置或者設置於載送雙態觸變訊號的ASIC焊料凸塊之間,藉此提供電性屏蔽。因此,可進一步改善ASIC晶片120與FI-WLP記憶體130之間的訊號完整性,且可進一步改善系統級封裝模組100的效能。
如參照圖7所述,當載送與FI-WLP記憶體130進行通訊的訊號的ASIC焊料球設置於第六區R6中時,基板110上的用於將訊號傳達至FI-WLP記憶體130的路徑短於基板110上的用於傳達其他訊號的路徑。因此,可進一步改善系統級封裝模組100的訊號完整性。
圖8示出ASIC晶片120的組件的排列分布圖120_AM的實例。參照圖1、圖6、圖7及圖8,如參照圖7所述,ASIC晶片120的排列分布圖120_AM可被劃分成位於ASIC晶片120的排列分布圖120_AM的中心處的第五區R5與位於周邊的第六區R6。
在第六區R6中可設置有將訊號傳達至FI-WLP記憶體130的實體電路PHY。舉例而言,實體電路PHY的數目可等於FI-WLP記憶體130的數目。實體電路PHY中的每一者可被配置成向ASIC晶片120傳達16個(×16)資料輸入及輸出訊號。
在第五區R5中可設置有核心電路CORE(例如,執行邏輯操作的邏輯組件及記憶體組件)。當實體電路PHY如參照圖8所述般設置於第六區R6中時,ASIC重佈線層ARDL上的用於將訊號傳達至FI-WLP記憶體130的路徑短於ASIC重佈線層ARDL上的用於傳達其他訊號的路徑。因此,可進一步改善系統級封裝模組100的訊號完整性。
圖9示出FBGA封裝的特徵及FI-WLP的特徵。參照圖1及圖9,將具有兩個記憶體晶片的FBGA封裝(雙晶片FBGA封裝)與各自包括一個記憶體晶片的FI-WLP進行比較。每一記憶體晶片可具有16個資料輸入及輸出(×16)。FBGA封裝可為扇出型WLP(FO-WLP)。
雙晶片FBGA封裝的資料輸入及輸出的數目為32(×32),所述兩個FI-WLP的輸入及輸出的數目為32,是16(×16)的兩倍(×2)。亦即,雙晶片FBGA封裝與所述兩個FI-WLP可提供相同的輸入及輸出頻寬。
儘管雙晶片FBGA封裝的大小為14×12毫米,然而當採用兩個FI-WLP時的總大小為9.13×11.08毫米。所述兩個FI-WLP較雙晶片FBGA封裝佔用的面積少40%。雙晶片FBGA封裝的球分布圖取決於標準,但可對所述兩個FI-WLP的球分布圖進行客製,例如參照圖4所述。
雙晶片FBGA封裝的厚度為4.1毫米,而所述兩個FI-WLP的厚度可為2.5毫米。如上所述,相較於雙晶片FBGA封裝,所述兩個FI-WLP具有減小的大小。因此,相較於使用雙晶片FBGA封裝,當在系統級封裝模組100中使用FI-WLP時,可進一步減小ASIC晶片120與記憶體晶片之間的距離,且可改善訊號完整性。另外,藉由對球分布圖進行客製,FI-WLP可提供較雙晶片FBGA封裝佳的訊號完整性。
圖10示出以FBGA封裝實施的系統級封裝模組的特徵及以FI-WLP實施的系統級封裝模組的特徵。參照圖10,將包括一個ASIC晶片及四個FBGA封裝記憶體(例如,FO-WLP)的第一系統級封裝模組的特徵與包括一個ASIC晶片及八個FI-WLP記憶體的第二系統級封裝模組的特徵進行比較。
如參照圖9所述,所述四個FBGA FO-WLP記憶體與所述八個FI-WLP記憶體可提供相同的輸入及輸出頻寬。第一系統級封裝模組中的ASIC晶片及第二系統級封裝模組中的ASIC晶片中的每一者的大小可等於18.0毫米×15.83毫米。
第一系統級封裝模組的大小可為29.5毫米×43.8毫米,而第二系統級封裝模組的大小為23.4毫米×38.1毫米。相較於使用FBGA FO-WLP記憶體的第一系統級封裝模組,使用FI-WLP記憶體的第二系統級封裝模組的大小可減小28%。
此外,在圖10中示出對第一系統級封裝模組的訊號完整性及第二系統級封裝模組的訊號完整性進行模擬的結果。結果表明,使用所述四個FBGA FO-WLP記憶體的第一系統級封裝模組在20 Gbps下具有144毫伏特的訊號完整性。相比之下,使用所述八個FI-WLP記憶體的第二系統級封裝模組在20 Gbps下具有295毫伏特的訊號完整性,較第一系統級封裝模組改善了105%。
作為實例,295毫伏特的訊號完整性是將ASIC晶片與FI-WLP記憶體之間的距離(最短距離)指定為2.5毫米的結果。當將ASIC晶片與FI-WLP記憶體之間的距離(最短距離)指定為5毫米時,相較於第一系統級封裝模組,第二系統級封裝模組可具有改善50%的訊號完整性。
如上所述,相較於安裝有記憶體晶片的系統級封裝模組,安裝有FI-WLP記憶體的系統級封裝模組可執行高頻測試,藉此確保效能。另外,相較於安裝有FBGA FO-WLP記憶體的系統級封裝模組,安裝有FI-WLP記憶體的系統級封裝模組具有減小的大小及改善的訊號完整性。
圖11示出具有堆疊結構的ASIC晶片120a的實例。參照圖11,ASIC晶片120a可包括邏輯晶片121及堆疊於邏輯晶片121上的第一記憶體晶片22及第二記憶體晶片25。邏輯晶片121可包括矽穿孔(through silicon vias,TSV)122。第一記憶體晶片22可包括TSV 24。
邏輯晶片121可經由TSV 122電性連接至第一記憶體晶片22及第二記憶體晶片25。第一記憶體晶片22中的每一者可經由焊料凸塊23連接至設置於最下部第一記憶體晶片22下方的邏輯晶片121的TSV 122或者連接至下部第一記憶體晶片22的TSV 24。第二記憶體晶片25可經由焊料凸塊26連接至設置於第二記憶體晶片25下方的最上部第一記憶體晶片22的TSV 24。
在邏輯晶片121下方可設置有重佈線層123及焊料凸塊124(或焊料球)。重佈線層123可包括以下中的至少一者:將TSV 122連接至焊料凸塊124中的至少一者的第六電性連接件EC6及將邏輯晶片121的通訊接墊中的至少一者電性連接至焊料凸塊124中的至少一者的第七電性連接件EC7。
圖12示出以堆疊結構實施的ASIC 120b的另一實例。參照圖12,ASIC 120b可包括ASIC基板129、附接至ASIC基板129的底表面的焊料球124’以及安裝於ASIC基板129上的邏輯晶片121。
在邏輯晶片121上可設置有中介層126。中介層126的至少一個側表面可自邏輯晶片121的頂表面平行於ASIC基板129的頂表面突出。第一記憶體晶片22及第二記憶體晶片25可堆疊於中介層126上。第一記憶體晶片22與第二記憶體晶片25的堆疊結構相同於參照圖11闡述的堆疊結構。因此,不再予以贅述。
邏輯晶片121的至少一個側表面可設置有至少一個導電結構125,導電結構125將中介層126電性連接至ASIC基板129。舉例而言,導電結構125可為側通孔。中介層126可包括第八電性連接件EC8及第九電性連接件EC9,第八電性連接件EC8及第九電性連接件EC9將與第一記憶體晶片22的TSV 24連接的焊料凸塊23電性連接至導電結構125。
ASIC基板129可包括以下中的一者:將導電結構125連接至焊料球124’中的至少一者的第十電性連接件EC10、將邏輯晶片121的通訊接墊中的至少一者連接至焊料球124’中的至少一者的第十一電性連接件EC11以及將導電結構125連接至邏輯晶片121的通訊接墊中的至少一者的第十二電性連接件EC12。
作為實例,可藉由FO-WLP的製程製造ASIC 120b。ASIC 120b可更包括環繞基板129、邏輯晶片121、中介層126、導電結構125、第一記憶體晶片22及第二記憶體晶片25的模製件。作為另一實例,ASIC 120b可在沒有模製件的情況下安裝於系統級封裝模組100(參見圖1)的基板110上。
圖13示出以堆疊結構實施的ASIC 120c的又一實例。參照圖13,ASIC 120c可包括ASIC基板129、附接至ASIC基板129的底表面的焊料球124’、安裝於ASIC基板129上的邏輯晶片121以及環繞ASIC基板129及邏輯晶片121的模製件127。舉例而言,ASIC基板129、邏輯晶片121、焊料球124’及模製件127可為FO-WLP。
中介層126可設置於模製件127上。中介層126的至少一個側表面可自邏輯晶片121的頂表面平行於ASIC基板129的頂表面突出。第一記憶體晶片22及第二記憶體晶片25可堆疊於中介層126上。第一記憶體晶片22與第二記憶體晶片25的堆疊結構相同於參照圖11闡述的堆疊結構。因此,不再予以贅述。
在邏輯晶片121的至少一個側表面上可設置有至少一個導電結構128,以穿過模製件127電性連接中介層126與ASIC基板129。舉例而言,導電結構128可為側通孔或模製穿孔(through mold via,TMV)。中介層126可包括第十三電性連接件EC13及第十四電性連接件EC14,第十三電性連接件EC13及第十四電性連接件EC14將與第一記憶體晶片22的TSV 24連接的焊料凸塊23電性連接至導電結構128。
ASIC基板129可更包括以下中的至少一者:將導電結構128連接至焊料球124’中的至少一者的第十五電性連接件EC15、將邏輯晶片121的通訊接墊中的至少一者連接至焊料球124’中的至少一者的第十六電性連接件EC16以及將導電結構128連接至邏輯晶片121的通訊接墊中的至少一者的第十七電性連接件EC17。
ASIC 120c可更包括環繞模製件127、中介層126、第一記憶體晶片22及第二記憶體晶片25的模製件。作為另一實例,ASIC 120c可在沒有模製件的情況下安裝於系統級封裝模組100(參見圖1)的基板110上。
圖14示出根據另一實施例的系統級封裝模組200。參照圖14,系統級封裝模組200包括基板210、安裝於基板210上的ASIC晶片220、堆疊於ASIC晶片220上的中介層260以及安裝於中介層260上的FI-WLP記憶體230。
ASIC晶片220可為藉由對邏輯組件與記憶體組件進行混合來實施的倒裝晶片,如參照圖1至圖10所述。作為另一實例,可藉由在邏輯晶片上堆疊記憶體晶片來實施ASIC晶片220,如參照圖11所述。作為又一實例,ASIC晶片220可以包括ASIC基板的封裝或半封裝的形式實施,如參照圖12及圖13所述。
中介層260的至少一個側表面可自ASIC晶片220的頂表面平行於基板210的頂表面突出。在ASIC晶片220的至少一個側表面上,至少一個導電結構270將中介層260電性連接至基板210。
FI-WLP記憶體230可經由記憶體焊料球MSB安裝至中介層260。中介層260可包括將FI-WLP記憶體230電性連接至導電結構270的第十八電性連接件EC18及第十九電性連接件EC19。
在基板210的底表面上可設置有焊料球250。基板210可包括以下中的至少一者:將導電結構270電性連接至焊料球250中的至少一者的第二十電性連接件EC20、將ASIC晶片220的通訊焊料凸塊(或焊料球)中的至少一者電性連接至焊料球250中的至少一者的第二十一電性連接件EC21以及將ASIC晶片220的通訊焊料凸塊(或焊料球)中的至少一者電性連接至導電結構270的第二十二電性連接件EC22。
系統級封裝模組200可更包括環繞基板210、ASIC晶片220、FI-WLP記憶體230、中介層260及導電結構270的模製件240。舉例而言,系統級封裝模組200可為FO-WLP。
在上述實施例中,已使用例如「第一(first)」、「第二(second)」、「第三(third)」等用語闡述了系統級封裝模組100或200的組件。然而,例如「第一」、「第二」、「第三」等用語僅用於將各個組件彼此區分開,且不並限制本發明概念。舉例而言,例如「第一」、「第二」、「第三」等用語並不意味著數值次序或任何形式的數值含義。
在本說明書中,當結合數值使用用語「大約(about)」或「實質上(substantially)」時,其意指相關聯的數值包括相對於規定數值的製造容差或操作容差(例如,±10%)。另外,當結合幾何形狀使用措詞「一般而言(generally)」或「實質上」時,其意指不對幾何形狀的精度作出要求,但對形狀的寬容度亦處於本揭露的範圍內。此外,應理解,不論數值或形狀被潤飾成「大約」還是「實質上」,該些數值及形狀皆應被視為包括相對於規定數值或形狀的製造容差或操作容差(例如,±10%)。儘管在示例性實施例的說明中使用用語「相同(same)」或「等同(identical)」,然而應理解,可存在一定的不精確度。因此應理解,當稱一個元件與另一元件相同時,一元件或值是在期望的製造容差範圍或操作容差範圍(例如,±10%)內與另一元件相同。
根據本發明概念,系統級封裝可包括以晶圓級封裝(WLP)實施的記憶體。因此,確保了系統級封裝模組的記憶體的效能。另外,WLP記憶體被設置成靠近特殊應用積體電路(ASIC)晶片。因此,改善了系統級封裝模組的訊號完整性。
以上說明是用於實踐本發明概念的具體實施例。本發明概念將不僅包括上述實施例,且亦包括能夠在設計上簡單改變或輕易改變的實施例。另外,本發明概念亦將包括能夠使用實施例輕易地修改及實踐的技術。因此,本發明概念的範圍不應僅限於上述實施例,而是應由本發明概念的申請專利範圍的等效內容以及以下申請專利範圍來界定。
13x、230:扇入型晶圓級封裝(FI-WLP)記憶體
13x_AM、120_AM:排列分布圖
13x_BM、120_BM:球分布圖
22:第一記憶體晶片
23、26、124:焊料凸塊
24、122:矽穿孔(TSV)
25:第二記憶體晶片
100、200:系統級封裝模組
110、210:基板
120、120a、220:特殊應用積體電路(ASIC)晶片
120b、120c:ASIC
121:邏輯晶片
123:重佈線層
124’、150、250:焊料球
125、128、270:導電結構
126、260:中介層
127、140、240:模製件
129:ASIC基板/基板
130:晶圓級封裝(WLP)記憶體/FI-WLP記憶體/扇出型晶圓級封裝(FO-WLP)記憶體
131:第一FI-WLP記憶體
132:第二FI-WLP記憶體
133:第三FI-WLP記憶體
134:第四FI-WLP記憶體
A1:第一箭頭
A2:第二箭頭
ADB:ASIC晶片主體
ADDR:位址
ARDL:ASIC重佈線層
ASB:ASIC焊料凸塊
CK:時脈訊號
CMD:命令
CORE:核心電路
CTRL:控制訊號
DQ:資料輸入及輸出訊號
DQS:資料選通訊號
EC1:第一電性連接件
EC2:第二電性連接件
EC3:第三電性連接件
EC4:第四電性連接件
EC5:第五電性連接件
EC6:第六電性連接件
EC7:第七電性連接件
EC8:第八電性連接件
EC9:第九電性連接件
EC10:第十電性連接件
EC11:第十一電性連接件
EC12:第十二電性連接件
EC13:第十三電性連接件
EC14:第十四電性連接件
EC15:第十五電性連接件
EC16:第十六電性連接件
EC17:第十七電性連接件
EC18:第十八電性連接件
EC19:第十九電性連接件
EC20:第二十電性連接件
EC21:第二十一電性連接件
EC22:第二十二電性連接件
L1:第一距離
L2:第二距離
L3:第三距離
L4:第四距離
MD:記憶體晶片
MEM_COM:記憶體通訊
MM:記憶體模製件
MRDL:記憶體重佈線層
MSB:記憶體焊料球
PERI:周邊電路
PHY:實體電路
R1:第一區/區
R2:第二區/區
R3:第三區/區
R5:第五區
R6:第六區
VI:電壓輸入
藉由參照附圖詳細闡述本發明概念的示例性實施例,本發明概念的上述及其他目的及特徵將變得顯而易見。
圖1是示出根據本發明概念的實施例的系統級封裝模組的透視圖。
圖2是系統級封裝模組的與第二方向及第三方向對應的平面的剖視圖。
圖3示出FI-WLP記憶體的示例性剖視圖。
圖4示出FI-WLP記憶體的球分布圖(ball map)的實例。
圖5示出FI-WLP記憶體的組件的排列分布圖(arrangement map)的實例。
圖6示出ASIC晶片的示例性剖視圖。
圖7示出ASIC晶片的球分布圖的實例。
圖8示出ASIC晶片的組件的排列分布圖的實例。
圖9示出精細球柵陣列(fine ball grid array,FBGA)封裝的特徵及FI-WLP的特徵。
圖10示出使用FBGA封裝實施的系統級封裝模組的特徵及使用FI-WLP實施的系統級封裝模組的特徵。
圖11示出具有堆疊結構的ASIC晶片的實例。
圖12示出以堆疊結構實施的ASIC的另一實例。
圖13示出以堆疊結構實施的ASIC的又一實例。
圖14示出根據另一實施例的系統級封裝模組。
100:系統級封裝模組
110:基板
120:特殊應用積體電路(ASIC)晶片
130:晶圓級封裝(WLP)記憶體/FI-WLP記憶體/扇出型晶圓級封裝(FO-WLP)記憶體
131:第一FI-WLP記憶體
132:第二FI-WLP記憶體
133:第三FI-WLP記憶體
134:第四FI-WLP記憶體
140:模製件
150:焊料球
L1:第一距離
L2:第二距離
L3:第三距離
L4:第四距離
Claims (20)
- 一種系統級封裝模組,包括: 基板; 特殊應用積體電路(ASIC)晶片,位於所述基板上; 第一晶圓級封裝(WLP)記憶體,位於所述基板上且在平行於所述基板的上表面的第一方向上與所述特殊應用積體電路晶片間隔開;以及 第二晶圓級封裝記憶體,位於所述基板上且在與所述第一方向相反的方向上與所述特殊應用積體電路晶片間隔開。
- 如請求項1所述的系統級封裝模組,其中所述第一晶圓級封裝記憶體與所述特殊應用積體電路晶片之間在所述基板上的距離以及所述第二晶圓級封裝記憶體與所述特殊應用積體電路晶片之間在所述基板上的距離小於或等於2.5毫米。
- 如請求項1所述的系統級封裝模組,其中所述第一晶圓級封裝記憶體與所述特殊應用積體電路晶片之間在所述基板上的距離以及所述第二晶圓級封裝記憶體與所述特殊應用積體電路晶片之間在所述基板上的距離小於或等於5毫米。
- 如請求項1所述的系統級封裝模組,其中所述特殊應用積體電路晶片包括經由焊料凸塊安裝至所述基板的倒裝晶片。
- 如請求項1所述的系統級封裝模組,其中 所述第一晶圓級封裝記憶體包括第一扇入型晶圓級封裝(FI-WLP)記憶體,且 所述第二晶圓級封裝記憶體包括第二扇入型晶圓級封裝(FI-WLP)記憶體, 其中所述第一扇入型晶圓級封裝記憶體及所述第二扇入型晶圓級封裝記憶體中的每一者包括 第一區,最靠近所述特殊應用積體電路晶片且包括第一焊料球,所述第一焊料球被配置成傳達第一訊號,所述第一訊號在高電平與低電平之間雙態觸變; 第二區,在所述第一區之後第二最靠近所述特殊應用積體電路晶片且包括第二焊料球,所述第二焊料球被配置成傳達第二訊號,所述第二訊號雙態觸變慢於所述第一訊號;以及 第三區,距所述特殊應用積體電路晶片最遠且包括第三焊料球,所述第三焊料球被配置成接收電壓。
- 如請求項5所述的系統級封裝模組,其中所述第一訊號包括資料輸入及輸出訊號、時脈訊號、及資料選通訊號中的至少一者。
- 如請求項5所述的系統級封裝模組,其中所述第二訊號包括命令訊號、位址訊號、及控制訊號中的至少一者。
- 如請求項5所述的系統級封裝模組,其中所述電壓包括電源供應電壓、地電壓、資料輸入及輸出電源供應電壓、資料輸入及輸出地電壓中的至少一者。
- 如請求項5所述的系統級封裝模組,其中所述第一扇入型晶圓級封裝記憶體及所述第二扇入型晶圓級封裝記憶體中的每一者更包括: 實體電路,位於所述第一區中且被配置成經由所述第一焊料球或所述第二焊料球而與所述特殊應用積體電路晶片進行通訊; 核心電路,位於所述第二區或所述第三區中且包括記憶體胞元,所述記憶體胞元被配置成儲存資料;以及 周邊電路,位於所述第二區或所述第三區中且被配置成因應於經由所述實體電路接收到的命令訊號及位址訊號而存取所述核心電路。
- 如請求項1所述的系統級封裝模組,其中所述第一晶圓級封裝記憶體包括 第一扇入型晶圓級封裝(FI-WLP)記憶體,且 所述第二晶圓級封裝記憶體包括第二扇入型晶圓級封裝(FI-WLP)記憶體;且 其中所述特殊應用積體電路晶片包括 第一焊料凸塊,位於所述特殊應用積體電路晶片的外側區中,所述第一焊料凸塊被配置成經由所述基板而與所述第一扇入型晶圓級封裝記憶體及所述第二扇入型晶圓級封裝記憶體進行通訊;以及 第二焊料凸塊,位於所述特殊應用積體電路晶片的所述外側區以內的內側區中,所述第二焊料凸塊被配置成經由所述基板而與外部裝置進行通訊。
- 如請求項10所述的系統級封裝模組,其中所述特殊應用積體電路晶片更包括: 實體電路,位於所述特殊應用積體電路晶片的所述外側區中,連接至所述第一焊料凸塊,且被配置成與所述第一扇入型晶圓級封裝記憶體及所述第二扇入型晶圓級封裝記憶體進行通訊。
- 如請求項11所述的系統級封裝模組,其中所述特殊應用積體電路晶片更包括: 核心電路,被配置成經由所述實體電路而與所述第一扇入型晶圓級封裝記憶體及所述第二扇入型晶圓級封裝記憶體進行通訊,被配置成經由所述第二焊料凸塊而與所述外部裝置進行通訊,且被配置成基於所述外部裝置的請求而執行圖形操作或神經網路操作。
- 如請求項1所述的系統級封裝模組,更包括: 第三晶圓級封裝記憶體,在垂直於所述第一方向的第二方向上與所述特殊應用積體電路晶片間隔開且位於所述基板上;以及 第四晶圓級封裝記憶體,位於所述基板上且在與所述第二方向相反的方向上與所述特殊應用積體電路晶片間隔開。
- 如請求項1所述的系統級封裝模組,其中所述特殊應用積體電路晶片包括: 邏輯晶片,經由邏輯焊料凸塊電性連接至所述基板;以及 記憶體晶片,堆疊於所述邏輯晶片上且藉由矽穿孔(TSV)電性連接至所述邏輯晶片。
- 如請求項1所述的系統級封裝模組,更包括: 焊料球,位於所述基板的底表面上且電性連接至所述特殊應用積體電路晶片。
- 如請求項1所述的系統級封裝模組,更包括: 模製件,環繞所述基板、所述特殊應用積體電路晶片、所述第一晶圓級封裝記憶體及所述第二晶圓級封裝記憶體。
- 一種系統級封裝模組,包括: 基板; 特殊應用積體電路(ASIC),位於所述基板上; 第一晶圓級封裝(WLP)記憶體,位於所述基板上且在平行於所述基板的上表面的第一方向上與所述特殊應用積體電路間隔開;以及 第二晶圓級封裝記憶體,位於所述基板上且在與所述第一方向相反的方向上與所述特殊應用積體電路間隔開; 其中所述特殊應用積體電路包括 特殊應用積體電路基板; 邏輯晶片,位於所述特殊應用積體電路基板上;以及 記憶體晶片,堆疊於所述邏輯晶片上。
- 如請求項17所述的系統級封裝模組,其中所述特殊應用積體電路更包括: 中介層,位於所述邏輯晶片與所述記憶體晶片之間;以及 至少一個導電結構,在所述邏輯晶片的至少一個側中將所述基板電性連接至所述中介層, 其中所述中介層將所述記憶體晶片電性連接至所述至少一個導電結構。
- 如請求項17所述的系統級封裝模組,其中所述特殊應用積體電路更包括: 特殊應用積體電路模製件,在所述特殊應用積體電路基板上環繞所述邏輯晶片; 中介層,位於所述特殊應用積體電路模製件與所述記憶體晶片之間;以及 至少一個導電結構,在所述邏輯晶片的至少一個側中穿過所述特殊應用積體電路模製件將所述基板電性連接至所述中介層, 其中所述中介層將所述記憶體晶片電性連接至所述導電結構。
- 一種系統級封裝模組,包括: 基板; 特殊應用積體電路(ASIC)晶片,經由焊料凸塊位於所述基板上; 第一扇入型晶圓級封裝(FI-WLP)記憶體,在第一方向上與所述特殊應用積體電路晶片間隔開且經由第一記憶體焊料球安裝於所述基板上,所述第一方向平行於所述基板的上表面; 第二扇入型晶圓級封裝記憶體,在與所述第一方向相反的方向上與所述特殊應用積體電路晶片間隔開且經由第二記憶體焊料球安裝於所述基板上; 第三扇入型晶圓級封裝記憶體,在第二方向上與所述特殊應用積體電路晶片間隔開且安裝於所述基板上,所述第二方向垂直於所述第一方向且平行於所述基板的所述上表面; 第四扇入型晶圓級封裝記憶體,在與所述第二方向相反的方向上與所述特殊應用積體電路晶片間隔開且安裝於所述基板上; 焊料球,位於所述基板的底表面上且電性連接至所述特殊應用積體電路晶片;以及 模製件,環繞所述基板、所述特殊應用積體電路晶片、所述第一扇入型晶圓級封裝記憶體、所述第二扇入型晶圓級封裝記憶體、所述第三扇入型晶圓級封裝記憶體及所述第四扇入型晶圓級封裝記憶體, 其中所述第一扇入型晶圓級封裝記憶體與所述特殊應用積體電路晶片之間的距離小於或等於5毫米,所述第二扇入型晶圓級封裝記憶體與所述特殊應用積體電路晶片之間的距離小於或等於5毫米,所述第三扇入型晶圓級封裝記憶體與所述特殊應用積體電路晶片之間的距離小於或等於5毫米,且所述第四扇入型晶圓級封裝記憶體與所述特殊應用積體電路晶片之間的距離小於或等於5毫米。
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US16/883,153 US11398454B2 (en) | 2019-10-18 | 2020-05-26 | System-in-package module |
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TWM472946U (zh) | 2013-01-16 | 2014-02-21 | Standard Technology Service Inc | 晶粒封裝結構 |
US9601463B2 (en) * | 2014-04-17 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out stacked system in package (SIP) and the methods of making the same |
KR20150141418A (ko) | 2014-06-10 | 2015-12-18 | 삼성전기주식회사 | 금속의 허메틱 실을 갖는 관성센서모듈 및 그를 사용한 다축센서 |
US20160111406A1 (en) * | 2014-10-17 | 2016-04-21 | Globalfoundries Inc. | Top-side interconnection substrate for die-to-die interconnection |
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US10784121B2 (en) * | 2016-08-15 | 2020-09-22 | Xilinx, Inc. | Standalone interface for stacked silicon interconnect (SSI) technology integration |
WO2018058416A1 (en) | 2016-09-29 | 2018-04-05 | Intel Corporation | Prepackaged stair-stacked memory module in a chip scale system in package, and methods of making same |
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JP2018152147A (ja) * | 2017-03-10 | 2018-09-27 | 東芝メモリ株式会社 | 半導体記憶装置及び方法 |
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US10497689B2 (en) * | 2017-08-04 | 2019-12-03 | Mediatek Inc. | Semiconductor package assembly and method for forming the same |
US10453821B2 (en) * | 2017-08-04 | 2019-10-22 | Samsung Electronics Co., Ltd. | Connection system of semiconductor packages |
US10468384B2 (en) | 2017-09-15 | 2019-11-05 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming embedded die substrate, and system-in-package modules with the same |
CN107768349B (zh) | 2017-09-25 | 2019-11-01 | 江苏长电科技股份有限公司 | 双面SiP三维封装结构 |
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