TW202133455A - 積體電路裝置 - Google Patents
積體電路裝置 Download PDFInfo
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- TW202133455A TW202133455A TW109136080A TW109136080A TW202133455A TW 202133455 A TW202133455 A TW 202133455A TW 109136080 A TW109136080 A TW 109136080A TW 109136080 A TW109136080 A TW 109136080A TW 202133455 A TW202133455 A TW 202133455A
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Abstract
一種裝置,包括第一晶粒與第二晶粒。第一、第二晶粒各自包括:各自包含第一、第二電路系統的第一、第二基底;各自置於第一、第二基底的上方的第一、第二互連結構;各自置於上述第一互連結構的上方的第一、第二介電層;各自置於第一、第二介電層的上方的第一、第二連接墊。第一晶粒的第一連接墊連接於第二晶粒的第二連接墊,第一晶粒與第二晶粒的至少一個包括金屬─絕緣體─金屬電容器,金屬─絕緣體─金屬電容器包括逐一向上方堆疊的超過二層的金屬層。
Description
本發明實施例是關於積體電路技術,特別是關於積體電路裝置及其形成方法。
半導體積體電路(integrated circuitry;IC)產業已經歷快速成長。積體電路材料與設計的技術進展,使每一代的積體電路比前一代具有更小且更複雜的電路。在積體電路演進的過程中,功能密度(比如單位晶片面積的內連線裝置數目)通常隨著幾何尺寸(比如採用的製作製程所能產生的最小構件(或線))的縮小而增加。
隨著半導體裝置的尺寸持續縮減,在製造方面的挑戰亦增加。例如,用於在積體電路晶片形成電容器裝置的現有製程已經不夠簡單或不夠便宜。因此雖然現有的半導體製造方法通常符合其預期目的,但無法完全滿足所有方面的需求。
一實施例是關於一種積體電路裝置,其包括一第一晶粒與一第二晶粒。上述第一晶粒包括一第一基底、一第一互連結構、一第一介電層及複數個第一連接墊。上述第一基底包含第一電路系統,上述第一互連結構置於上述第一基底的上方,上述第一介電層置於上述第一互連結構的上方,上述第一連接墊置於上述第一介電層的上方。上述第二晶粒包括一第二基底、一第二互連結構、一第二介電層及複數個第二連接墊。上述第二基底包含第二電路系統,上述第二互連結構置於上述第二基底的上方,上述第二介電層置於上述第二互連結構的上方,上述第二連接墊置於上述第二介電層的上方。上述第一晶粒的上述第一連接墊連接於上述第二晶粒的上述第二連接墊,上述第一晶粒與上述第二晶粒的至少一個包括一金屬─絕緣體─金屬(metal-insulator-metal;MIM)電容器,上述金屬─絕緣體─金屬電容器包括逐一向上方堆疊的超過二層的金屬層。
另一實施例是關於一種積體電路裝置,其包括一第一晶粒、一第二晶粒與一電容器。上述第一晶粒與上述第二晶粒經由複數個連接墊而連接在一起,上述電容器嵌於上述第一晶粒與上述第二晶粒的至少一個。上述電容器包括超過二個金屬層,上述金屬層的一第一子集是電性且物理性連接於一第一導體構件,上述金屬層的一第二子集是電性且物理性連接於一第二導體構件,上述第二導體構件不同於上述第一導體構件。
又另一實施例是關於一種積體電路裝置的形成方法,其包括:提供一第一晶粒,上述第一晶粒包括一第一基底與一第一互連結構,上述第一互連結構形成在上述第一基底的上方;在上述第一互連結構形成一第一介電層;在上述第一介電層的上方形成一或多個第一連接墊;提供一第二晶粒,上述第二晶粒包括一第二基底與一第二互連結構,上述第二互連結構形成在上述第二基底的上方;在上述第二互連結構形成一第二介電層;在上述第二介電層的上方形成一或多個第二連接墊;以及將上述一或多個第一連接墊連接於上述一或多個第二連接墊。上述第一晶粒與上述第二晶粒的至少一個包括嵌於其中的一金屬─絕緣體─金屬(metal-insulator-metal;MIM)電容器。
要瞭解的是,以下的揭露內容提供許多不同的實施例或範例以實現本發明實施例的不同構件。以下的揭露內容敘述各個構件及其排列方式的特定實施例或範例,以簡化本發明實施例的說明。當然,這些特定的範例並非用以限定。例如,元件的尺寸並非受限於所揭露的範圍或值,但可能依存於製程條件及/或裝置所需求的性質。此外,若是本發明實施例敘述了一第一構件形成於一第二構件之上或上方,即表示其可能包括上述第一構件與上述第二構件是直接接觸的實施例,亦可能包括了有附加構件形成於上述第一構件與上述第二構件之間,而使上述第一構件與第二構件可能未直接接觸的實施例。為了簡潔,可能以任意的比例繪示各種構件。此外,本發明實施例可能會在各種實施例重複使用相同的元件符號。這樣的重複是為了敘述上的簡化與明確,而非意指所討論的不同實施例及/或結構之間的關係。
此外,空間性的相對用語如「下方」、「其下」、「較下方」、「上方」、「較上方」、或類似用語可用於簡化說明某一元件與另一元件在圖示中的相對關係。空間性的相對用語可延伸至以其他方向使用之元件,而非侷限於圖示方向。舉例來說,若翻轉圖式中的裝置,原本在其他單元或結構之下的單元將轉為在其他單元或結構之上。因此,例示性的用語「之下」可指之上與之下兩種方向。裝置亦可轉動90˚或其他角度,因此方向性用語僅用以說明圖示中的方向。
此外,當數值或數值範圍的描述有「約」、「近似」、或類似用語時,如所屬技術領域中具有通常知識者所理解,其意圖包含一合理的數值範圍,此範圍包括上述數字,例如包含所述數值的+/-10%的範圍內或其他數值。舉例來說,用語「約5 nm」包含的尺寸範圍介於4.5 nm至5.5 nm之間。
積體電路晶片包括複數種不同形式的微電子構件,例如電晶體、電阻器、電感器、電容器等等。對於每一種這些形式的微電子構件,可能會有各式各樣的製造方法,結果得到這些構件的不同結構。本發明實施例涉及一獨特形式的電容器——稱為超高密度金屬─絕緣體─金屬(super high-density metal-insulator-metal;SHDMIM)電容器以及如何將其整合進一封裝架構,例如小外型積體電路(Small Outline Integrated Circuitry;SOIC),後文參考圖式第1至24圖而作詳細討論。
第1~9圖顯示一積體電路結構100的一系列的示意性的局部剖面側視圖,根據本發明實施例在一實施形態的各種面向所建構。請參考第1圖,積體電路結構100包括一積體電路基底110。在一些實施形態中,積體電路基底110包括一半導體基底,例如一矽基底。積體電路基底110亦可包括各種裝置,例如場效電晶體(field-effect transistors;FETs)、記憶體單元(memory cells)、影像感測器、被動元件、其他裝置或上述之組合。在一些實施形態中,積體電路基底110包括具有例如平面場效電晶體等的各種積體電路裝置的複數個平面主動區。在一些其他的實施形態中,積體電路基底110包括複數個鰭式(舉例來說,垂直突起的)主動區,其具有形成於其上的各種積體電路裝置。作為一非限制性的例子,如第1圖所示之形成在積體電路基底110的電路系統115。電路系統115可包括平面式的電晶體或鰭式場效電晶體型式的電晶體。
積體電路基底110亦包括一互連結構120,互連結構120形成在上述半導體基底的上方。互連結構120包括各種導體構件,例如金屬線(舉例來說,複數個金屬線130)、接觸物、導孔等等,以提供水平與垂直的電路佈線。例如金屬線130等的上述複數個金屬線分布在多層金屬層中,例如一第一金屬層(舉例來說,一M1層)、一第二金屬層(舉例來說,一M2層)、……以及一頂部金屬層。除了其他事項,互連結構120的上述導體構件提供到達電路系統115的電性連接。互連結構120亦包括一介電材料140,以提供各種導體構件之間的電性隔離,以避免電路的短路。
現在請參考第2圖,在互連結構120的上方,例如在互連結構120的一頂部金屬層的上方,形成一鈍化膜150。鈍化膜150可對積體電路基底110提供保護。在一些實施形態中,鈍化膜150包括一氮化矽(SiN)膜及上述氮化矽膜上的一非摻雜的矽酸鹽玻璃(un-doped silica glass;USG)膜。這些膜是藉由一適當的沉積製程所形成,例如藉由高密度化學氣相沉積(high density plasma chemical vapor deposition;HDPCVD)等。
現在請參考第3圖,在鈍化膜150的上方形成一導體層160。在一些實施形態中,導體層160包括一金屬、一金屬合金或一金屬化合物。例如,導體層160可包括氮化鈦。導體層160的形成可使用一或多道的沉積製程,例如化學氣相沉積(chemical vapor deposition;CVD)、物理氣相沉積(physical vapor deposition;PVD)、原子層沉積(atomic layer deposition;ALD)或上述之組合。要瞭解的是,這個導體層160的一部分將作為本發明實施例之超高密度金屬─絕緣體─金屬電容器的複數個電極中的一個(或是,複數個導體片中的一個)。
現在請參考第4圖,施行一微影製程180以將導體層160導體層160圖形化。作為微影製程180的一部分,可以在導體層160的上方形成一圖形化的光阻層。使用此圖形化的光阻層作為一遮罩,可以對導體層160進行蝕刻。導體層160之未被上述圖形化的光阻層保護的部分會被蝕除,而導體層160之在上述圖形化的光阻層下的部分則受到保護而在進行上述蝕刻製程之後留下。導體層160的留下來的部分則作為上述超高密度金屬─絕緣體─金屬電容器的電極或導體片。
現在請參考第5圖,施行一沉積製程190,以在導體層160的留下來的部分的上方以及鈍化膜150的暴露的表面的上方形成一介電層200。沉積製程190可包括化學氣相沉積、物理氣相沉積、原子層沉積或上述之組合。在一些實施形態中,介電層200可包括具有高k值(high-k)的介電常數的一介電材料。例如一高k值的介電材料可以是具有大於約4 (舉例來說,大於氧化矽的介電常數)的介電常數的介電材料。作為上述高k值的介電材料的適當選項包括但不限於:氧化鉿(hafnium oxide)、氧化鋯(zirconium oxide)、氧化鋁(aluminum oxide)、二氧化鉿-氧化鋁摻合物(hafnium dioxide-alumina alloy)、氧化鉿矽(hafnium silicon oxide)、氮氧化鉿矽(hafnium silicon oxynitride)、氧化鉿鉭(hafnium tantalum oxide)、氧化鉿鈦(hafnium titanium oxide)、氧化鉿鋯(hafnium zirconium oxide)、其類似物或上述之組合。
現在請參考第6圖,在介電層200的上方形成一導體層210。在一些實施形態中,導體層210包括一金屬材料,例如具有與導體層160實質上類似的材料成分的一金屬材料。導體層210的形成可藉由使用一適當的沉積製程來沉積一導體層,之後將所沉積的導體層圖形化,以形成導體層210的各種區段。導體層210的上述各種區段亦可作為上述超高密度金屬─絕緣體─金屬電容器的電極或導體片。介電層200提供在導體層160與導體層210的區段之間的電性隔離或絕緣。
現在請參考第7圖,施行一沉積製程220以將介電層200擴張到導體層210上方。沉積製程220可包括化學氣相沉積、物理氣相沉積、原子層沉積或上述之組合。在一些實施形態中,所沉積的材料可包括一高k值介電材料。
現在請參考第8圖,在介電層200的上方形成一導體層260。在一些實施形態中,導體層260包括一金屬材料,例如具有與導體層160或210 (舉例來說,氮化鈦)實質上類似的材料成分的一金屬材料。導體層260的形成可藉由使用一適當的沉積製程來沉積一導體層,之後將所沉積的導體層圖形化,以形成導體層260的各種區段。導體層260的上述各種區段亦可作為一超高密度金屬─絕緣體─金屬電容器265的電極或導體片。介電層200的材料可作為超高密度金屬─絕緣體─金屬電容器265的介電材料。
要注意的是,超高密度金屬─絕緣體─金屬電容器265是一多片電容器(multi-plate capacitor),其可包括不只二個導體片(或是,超過二個金屬層)。例如,示於第8圖的超高密度金屬─絕緣體─金屬電容器265可包括垂直逐一向上堆疊的三個導體層160、210與260。由於一電容器包括二個電極,有些導體片可電性耦合在一起而作為一個電極。例如,導體層210的一個區段可作為超高密度金屬─絕緣體─金屬電容器265的一個電極;導體層160的一個區段可電性耦合於導體層260的一個區段,一起作為超高密度金屬─絕緣體─金屬電容器265的另一個電極。也是要瞭解的是,第1至8圖僅繪示用於一超高密度金屬─絕緣體─金屬電容器265的製造過程的一非限制性的例子。示於第8圖的超高密度金屬─絕緣體─金屬電容器265的各種導體層160、210、260的排列或架構並無限定於所示情況的意思。在其他實施形態中,超高密度金屬─絕緣體─金屬電容器265可具有其他形狀或架構、或是其他數量的導體或金屬層(舉例來說,超過三個)。
現在請參考第9圖,在導體層260的上方以及在介電層200的暴露的表面的上方形成一鈍化膜270。在一些實施形態中,鈍化膜270可包括與鈍化膜150實質上類似的材料,例如鈍化膜270可包括氮化矽或非摻雜的矽酸鹽玻璃。鈍化膜270的形成,將超高密度金屬─絕緣體─金屬電容器265嵌於鈍化膜150與270中。
其後,可形成複數個導體墊290。可使用一或多道的圖形化、蝕刻及沉積製程來形成導體墊290。例如,可蝕刻出複數個開口或溝槽,以垂直穿過鈍化膜150與270及介電層200的選定區域以及導體層160、210與260的選定區域。然後,可以以一導體材料(舉例來說,鋁)填充上述開口或溝槽,以形成導體墊290。導體墊290提供到達超高密度金屬─絕緣體─金屬電容器265的各個電極或導體片的電性連接,例如到達導體層160、210與260的一子集(subset)。在所繪示的實施形態中,有些導體墊290亦電性耦合於互連結構120的金屬線130的一子集,藉此將超高密度金屬─絕緣體─金屬電容器265的電極或導體片與互連結構120電性互連。
第10~16圖顯示一系列的示意性的局部剖面側視圖,顯示如何將包含一或多個超高密度金屬─絕緣體─金屬電容器(例如超高密度金屬─絕緣體─金屬電容器265)的積體電路晶粒接合或封裝,其根據本發明實施例在一實施形態的各種面向。現在請參考第10圖,提供一晶粒300。晶粒300可以是尚未被單片化(singulate)的一晶圓的一部分。晶粒300包括一基底310。基底310可類似於前文參考第1至9圖所討論的積體電路基底110。晶粒300可包括一電路系統315。電路系統315可類似於前文參考第1至9圖所討論的電路系統115。
晶粒300亦可包括一互連結構320。互連結構320可類似於前文參考第1至9圖所討論的互連結構120。例如,互連結構320可包括複數個金屬層,複數個金屬線(例如金屬線330)形成於上述金屬層。藉由一介電材料340將金屬線330彼此電性隔離,而介電材料340可類似於前文參考第1至9圖所討論的介電材料140。
亦可形成複數個導孔或複數個接觸件,使其電性耦合於金屬線330中的一或多個。作為一範例,可形成一基底貫穿孔(through substrate via;TSV)335,使其延伸而至少部分地垂直貫穿基底310。將基底貫穿孔335的一端形成為與金屬線330中的一個有物理性接觸。如此,基底貫穿孔335可用來提供到達互連結構320的電性連接,並反過來提供到達晶粒300的裝置或構件的其餘部分(例如電路系統315) 的電性連接。作為另一個例子,可形成一導體墊390,使其與金屬線330中的另一個有電性及物理性接觸。導體墊390可類似於前文參考第9圖所討論的導體墊290。導體墊390亦可用來提供到達互連結構320的電性連接,並反過來提供到達晶粒300的裝置或構件的其餘部分(例如電路系統315) 的電性連接。
晶粒300亦可包括嵌於其中的一超高密度金屬─絕緣體─金屬電容器395。例如,可使用類似於前文參考第1至9圖所討論的製程流程來製造超高密度金屬─絕緣體─金屬電容器395。超高密度金屬─絕緣體─金屬電容器395可包括複數個金屬片(舉例來說,對應於第9圖的導體層160、210與260的上述區段的金屬片),但是為了簡化的緣故,在第10圖中並未將這些金屬片分開繪示。可將超高密度金屬─絕緣體─金屬電容器395嵌於類似於前文參考第5至9圖所討論的鈍化膜150或270之一鈍化膜,其中可將上述鈍化膜形成在互連結構320的上方。為了簡化的緣故,被超高密度金屬─絕緣體─金屬電容器395嵌入的上述鈍化膜未在此具體討論。在一個取代的方案,可將超高密度金屬─絕緣體─金屬電容器395嵌於互連結構320的介電材料340。
現在請參考第11圖,亦提供一晶粒400。在許多方面,晶粒400可實質上類似於晶粒300。例如,晶粒400亦可以是尚未被單片化的一晶圓的一部分,並可包括一基底410、電路系統415、一互連結構420 (舉例來說,包含複數個金屬線430與一介電層440)、一導體墊490與嵌入的一超高密度金屬─絕緣體─金屬電容器495,其中基底410類似於晶粒300的基底310,電路系統415類似於晶粒300的電路系統315,互連結構420類似於晶粒300的互連結構320,導體墊490類似於晶粒300的導體墊390,嵌入的超高密度金屬─絕緣體─金屬電容器495類似於晶粒300的嵌入的超高密度金屬─絕緣體─金屬電容器395。亦要瞭解的是,為了簡化的緣故,被超高密度金屬─絕緣體─金屬電容器495嵌入的鈍化膜未在此具體討論。然而,與晶粒300不同的是,晶粒400並未包括基底貫穿孔(舉例來說,晶粒300的基底貫穿孔335)。
現在請參考第12與13圖,分別在晶粒300的互連結構320的上方與晶粒400的互連結構420的上方,形成介電層500與510。在一些實施形態中,介電層500與510可各包括氧化矽材料。介電層500與510的上表面可各自歷經一平坦化製程,例如一化學機械研磨(chemical mechanical polishing;CMP)製程。其後,可分別在介電層500與510的上方,形成介電層520與530。在一些實施形態中,介電層520與530可包括氧化矽、氮化矽、碳化矽、氮氧化矽(silicon oxynitride)或上述之組合。然後,可以在介電層520與530形成複數個連接墊。例如,可以在介電層520形成複數個連接墊550,而在介電層530形成複數個連接墊560。可藉由分別在介電層520與530蝕刻出複數個溝槽,後續以例如銅、鋁、鈦、鈷或上述之組合等的一導體材料填入上述溝槽,而形成連接墊550與560。
亦在晶粒300形成一基底貫穿孔570,也在晶粒400形成一基底貫穿孔580。基底貫穿孔570垂直延伸而穿過介電層500,並電性且物理性耦合於金屬線330中的一個與連接墊550中的一個。基底貫穿孔580垂直延伸而穿過介電層510,並電性且物理性耦合於金屬線430中的一個與連接墊560中的一個。
現在請參考第14圖,例如經由一黏著材料,將包含晶粒300的上述晶圓貼附於一膜框585。然後,上述晶圓歷經一單片化製程(singulation process)(舉例來說,鋸切(sawing)或切割(dicing)),以將複數個晶粒300彼此分離。換句話說,上述單片化製程將尚未單片化的晶圓變成複數個單一的晶粒300。類似地,可以將包含晶粒400的上述晶圓單片化,以形成複數個單一的晶粒400。
現在請參考第15圖,將晶粒300與晶粒400接合在一起。例如,可以將晶粒300垂直翻轉而接合於晶粒400,而使晶粒300的連接墊550接合於晶粒400的連接墊560。當晶粒300與400的橫向尺寸不相等時,可以在晶粒300的側面上形成一填隙材料590。換句話說,填隙材料590可填充由晶粒300與晶粒400之間的尺寸差異所造成的空隙或空間。可以對晶粒300施行一研磨或蝕刻製程,以部分地移除基底310,直到露出基底貫穿孔335。亦可視需求施行另一個平坦化製程,以使基底310與基底貫穿孔335的暴露的表面平坦化。
現在請參考第16圖,可以在基底310的上方與基底貫穿孔335的上方形成一介電層600。在一些實施形態中,介電層600可包括一鈍化層,例如其可包括一材料,此材料實質上類似於前文討論的鈍化膜150或鈍化膜270。可以在介電層600形成一或多個金屬線,例如金屬線610。亦可將這些金屬線610中的一個形成為與基底貫穿孔335電性連接。亦可在介電層600形成複數個連接墊620。其後,可以在連接墊620上形成複數個導體凸塊630(或是,軟焊凸塊)。在一些實施形態中,導體凸塊630可以各包括一金屬材料,而得以使其電性接續於晶粒300與400的各種構件(舉例來說,電路系統315或415或是超高密度金屬─絕緣體─金屬電容器395或495)。
第17圖顯示包括一超高密度金屬─絕緣體─金屬電容器的一封裝結構的另一個實施形態。為了明確與一致性的緣故,出現在第16圖與第17圖的類似元件將會被賦予相同的符號。如第17圖所示,晶粒300包括一鈍化膜350,鈍化膜350是置於介電層500與互連結構320之間;而晶粒400包括一鈍化膜450,鈍化膜450是置於介電層510與互連結構420之間。鈍化膜350與450可類似於前文參考第2至9圖所討論的鈍化膜150或270。
超高密度金屬─絕緣體─金屬電容器495是嵌於鈍化膜450中。為了有助於瞭解超高密度金屬─絕緣體─金屬電容器495的結構,在第18圖顯示晶粒400之包含超高密度金屬─絕緣體─金屬電容器495的部分650的放大的剖面圖。超高密度金屬─絕緣體─金屬電容器495是嵌於鈍化膜450中,鈍化膜450可包括複數層,例如包括一鈍化膜層450A與一鈍化膜層450B,鈍化膜層450B是置於鈍化膜層450A的上方。超高密度金屬─絕緣體─金屬電容器495可以亦包括逐一向上方垂直堆疊的複數個導體層(舉例來說,複數個金屬片)。例如,超高密度金屬─絕緣體─金屬電容器495可包括一導體層700、一導體層710與一導體層720,其中導體層710形成在導體層700的上方,導體層720形成在導體層710的上方。導體層700、710與720可被形成為類似於前文參考第4至9圖所討論的導體層160、210與260。導體層700、710與720亦藉由介電層740與750而被彼此電性分離或隔離。例如,介電層740將導體層700與導體層710彼此分離,而介電層750則將導體層710與導體層720彼此分離。介電層740與750可被形成為類似於前文參考第4至9圖所討論的介電層200。例如,介電層740與750可各自包含一高k值介電材料。
要注意的是,在示於第18圖的實施形態中,導體層710是部分地形成在導體層700的上方。例如,導體層710的一個區段是形成在導體層700的一「左」部的上方,而導體層710的另一個區段則是形成在導體層700的一「右」部的上方。導體層710的這二個區段也藉由例如介電層740與750而被彼此電性隔離。還有,可將導體層720形成在導體層710的這二個區段之間。
如第18圖所示,超高密度金屬─絕緣體─金屬電容器495的導體層700與720各自電性連接於一導體墊491 (舉例來說,經由其側表面),導體墊491垂直延伸而穿過鈍化膜450。如此,導體墊491可用來提供一電性連接而到達超高密度金屬─絕緣體─金屬電容器495的一個電極——包含於導體層700與720的電極而作為其金屬片。同時,超高密度金屬─絕緣體─金屬電容器495的導體層710的「左」區段是電性連接於一導體墊490(舉例來說,經由其側表面) ,導體墊490垂直延伸而穿過鈍化膜450。如此,導體墊490可用來提供一電性連接而到達超高密度金屬─絕緣體─金屬電容器495的其他電極——包含於導體層710的電極而作為其金屬片。在這個類型,超高密度金屬─絕緣體─金屬電容器495可包括複數個金屬層或片(舉例來說,超過二個),其中上述金屬層的一第一子集(舉例來說,導體層700與720)是用來形成一個電極,而上述金屬層的一第二子集(舉例來說,導體層710)是用來形成另一個電極。在一些實施形態中,如用於第18圖的實施形態的例子,上述金屬層的上述第一子集與上述第二字集互為零交集。也要瞭解的是,類似於超高密度金屬─絕緣體─金屬電容器495的其他的超高密度金屬─絕緣體─金屬電容器可被形成來嵌於鈍化膜450。例如,可將一或多個額外的超高密度金屬─絕緣體─金屬電容器495形成至超高密度金屬─絕緣體─金屬電容器495的「左邊」或「右邊」,而使這些超高密度金屬─絕緣體─金屬電容器仍然嵌於鈍化膜450且電性連接至類似於導體墊490、491的導體墊。然而,為了簡化的緣故,這些額外的超高密度金屬─絕緣體─金屬電容器並未具體繪示於此。
第19~20圖顯示包括一超高密度金屬─絕緣體─金屬電容器的一封裝結構的另一個實施形態。再一次,為了明確與一致性的緣故,在第19~20圖中,出現在第17~18圖的類似元件將會被賦予相同的符號。現在請參考第19圖,超高密度金屬─絕緣體─金屬電容器495是經由另一個基底貫穿孔581而電性耦合於連接墊560中的一個。再一次,在第20圖顯示晶粒400之包含超高密度金屬─絕緣體─金屬電容器495的部分650的放大的剖面圖。超高密度金屬─絕緣體─金屬電容器495包括導體層700、710與720作為其金屬片。超高密度金屬─絕緣體─金屬電容器495亦包括介電層740與750作為其介電材料。作為超高密度金屬─絕緣體─金屬電容器495的一個電極,導體層700與720電性連接於導體墊491。作為超高密度金屬─絕緣體─金屬電容器495的另一個電極,導體層710是電性連接於基底貫穿孔581。由於基底貫穿孔581是電性連接於連接墊560,連接墊560亦用來獲得到達超高密度金屬─絕緣體─金屬電容器495的電性接續。換句話說,導體墊491與基底貫穿孔581可各自作為超高密度金屬─絕緣體─金屬電容器495的一控制端子。再一次,要瞭解的是,類似於超高密度金屬─絕緣體─金屬電容器495的其他的超高密度金屬─絕緣體─金屬電容器(其包括類似於基底貫穿孔581的複數個基底貫穿孔)可被形成來嵌於鈍化膜450。例如,可將一或多個額外的超高密度金屬─絕緣體─金屬電容器495形成至超高密度金屬─絕緣體─金屬電容器495的「左邊」或「右邊」,而使這些超高密度金屬─絕緣體─金屬電容器仍然嵌於鈍化膜450且電性連接至類似於導體墊490、491的導體墊。然而,為了簡化的緣故,這些額外的超高密度金屬─絕緣體─金屬電容器並未具體繪示於此。
與示於第17~18圖的實施形態比較,示於第19~20圖的實施形態提供了控制端子面積的減少。這是因為基底貫穿孔581(作為用於超高密度金屬─絕緣體─金屬電容器495的一控制端子)可以明顯地小於導體墊490,導體墊490在示於第18圖的實施形態是用來作為用於超高密度金屬─絕緣體─金屬電容器495的一控制端子。在控制端子面積的減少可增加晶片佔用面積(chip estate)的效率及/或有助於減少整體封裝結構的尺寸,而較佳。
第21~22圖顯示包括一超高密度金屬─絕緣體─金屬電容器的一封裝結構的又另一個實施形態。再一次,為了明確與一致性的緣故,在第21~22圖中,出現在第17~18圖的類似元件將會被賦予相同的符號。現在請參考第21圖,晶粒300包括超高密度金屬─絕緣體─金屬電容器395,而晶粒400則包括超高密度金屬─絕緣體─金屬電容器495。超高密度金屬─絕緣體─金屬電容器395是嵌於鈍化膜350內並經由一基底貫穿孔571而電性耦合於連接墊550中的一個,而超高密度金屬─絕緣體─金屬電容器495則經由基底貫穿孔581而電性耦合於連接墊560中的一個。由於連接墊550與560是接合在一起,超高密度金屬─絕緣體─金屬電容器395與495是以並聯的方式電性耦合在一起。
超高密度金屬─絕緣體─金屬電容器395與超高密度金屬─絕緣體─金屬電容器495之間的並聯是更詳細地繪示於第22圖,第22圖是晶粒300與400的一部分650的一放大視圖。在晶粒400的超高密度金屬─絕緣體─金屬電容器495的排列可以是實質上類似於示於第20圖的實施形態。在晶粒300的超高密度金屬─絕緣體─金屬電容器395的排列可以是在晶粒400的超高密度金屬─絕緣體─金屬電容器495的排列的實質上的鏡像。例如,超高密度金屬─絕緣體─金屬電容器395是嵌於鈍化膜350,其中鈍化膜350可包括複數層,例如一鈍化膜層350A與一鈍化膜層350B。超高密度金屬─絕緣體─金屬電容器395可以亦包括超過二個導體層(舉例來說,金屬片),例如分別類似於導體層700、710與720的導體層800、810與820。藉由分別類似於介電層740與750之介電層840與850,亦將導體層800、810與820彼此電性分離或隔離。
作為超高密度金屬─絕緣體─金屬電容器395的一個電極,導體層800與820是電性連接於導體墊391。作為超高密度金屬─絕緣體─金屬電容器395的其他電極,導體層810是電性連接於基底貫穿孔571。由於基底貫穿孔571是連接於導體墊550且基底貫穿孔581是連接於導體墊560而且導體墊550與560是接合在一起,導體層810與710亦是電性耦合在一起。如此,超高密度金屬─絕緣體─金屬電容器395與超高密度金屬─絕緣體─金屬電容器495是以並聯的方式電性耦合在一起。
藉由超高密度金屬─絕緣體─金屬電容器395與495的並聯耦合而提供的一項效益是電容值的增加。例如,若是超高密度金屬─絕緣體─金屬電容器395與495各提供C1的電容值,然後藉由並聯耦合的超高密度金屬─絕緣體─金屬電容器395與495提供的合計電容值為約C2=2*C1。要注意的是,上述合計電容值C2並不限於2*C1,而可藉由調整超高密度金屬─絕緣體─金屬電容器395的電容值或超高密度金屬─絕緣體─金屬電容器495的電容值而彈性調配。再一次,要瞭解的是,類似於超高密度金屬─絕緣體─金屬電容器495的其他的超高密度金屬─絕緣體─金屬電容器(其包括類似於基底貫穿孔571與581的複數個基底貫穿孔)可被形成來嵌於鈍化膜450。例如,可將一或多個額外的超高密度金屬─絕緣體─金屬電容器495形成至超高密度金屬─絕緣體─金屬電容器495的「左邊」或「右邊」,而使這些超高密度金屬─絕緣體─金屬電容器仍然嵌於鈍化膜450且電性連接至類似於導體墊490與基底貫穿孔571及581的導體結構。然而,為了簡化的緣故,這些額外的超高密度金屬─絕緣體─金屬電容器並未具體繪示於此。
第23圖顯示包括一超高密度金屬─絕緣體─金屬電容器的一封裝結構的又另一個實施形態。再一次,為了明確與一致性的緣故,在第23圖中,出現在第17~22圖的類似元件將會被賦予相同的符號。示於第23圖的實施形態與示於第17~22圖的實施形態之間的一項不同點是超高密度金屬─絕緣體─金屬電容器895是裝置在介電層600而不是在鈍化膜350或450。在形成於介電層600的上方或下方的一鈍化膜,亦可形成超高密度金屬─絕緣體─金屬電容器895。這樣的鈍化膜可以類似於鈍化膜350或450,並可包括複數個鈍化膜層。超高密度金屬─絕緣體─金屬電容器895的導體層與介電層的配置可實質上類似於示於第18圖的超高密度金屬─絕緣體─金屬電容器495。在一些實施形態中,超高密度金屬─絕緣體─金屬電容器895的至少一個電極可以電性耦合於導體凸塊630中的至少一個。因此,導體凸塊630亦可以作為超高密度金屬─絕緣體─金屬電容器895的控制端子。
第24圖是一流程圖,顯示根據本發明實施例的一實施形態的一方法1000。方法1000包括一步驟1010,步驟1010提供一第一晶粒,其包括一第一基底與形成在上述第一基底上方的一第一互連結構。在一些實施形態中,提供上述第一晶粒包括提供包含上述第一晶粒的一第一晶圓。
方法1000包括一步驟1020,步驟1020是在上述第一互連結構的上方形成一第一介電層。
方法1000包括一步驟1030,步驟1030是在上述第一介電層的上方形成一或多個第一接合墊。
方法1000包括一步驟1040,步驟1040提供一第二晶粒,其包括一第二基底與形成在上述第二基底上方的一第二互連結構。在一些實施形態中,提供上述第二晶粒包括提供包含上述第二晶粒的一第二晶圓。
方法1000包括一步驟1050,步驟1050是在上述第二互連結構的上方形成一第二介電層。
方法1000包括一步驟1060,步驟1060是在上述第二介電層的上方形成一或多個第二接合墊。
方法1000包括一步驟1070,步驟1070是將上述一或多個第一接合墊接合於上述一或多個第二接合墊。
上述第一晶粒與上述第二晶粒的至少一個包括嵌於其中的一金屬─絕緣體─金屬電容器。在一些實施形態中,上述金屬─絕緣體─金屬電容器包括一第一導體層、一第一介電材料、一第二導體層、一第二介電材料及一第三導體層,上述第一介電材料置於上述第一導體層的上方,上述第二導體層置於上述第一介電材料的上方,上述第二介電材料置於上述第二導體層的上方,上述第三導體層置於上述第二介電材料的上方。
要瞭解的是,可以在方法1000的步驟1010、1020、1030、1040、1050、1060、1070之前、過程中或之後施行額外的製程。例如,方法1000可包括在上述第一晶粒或上述第二晶粒形成上述金屬─絕緣體─金屬電容器的一步驟。作為另一個例子,方法1000可包括:將上述第一導體層與上述第三導體層,與上述第一晶粒或上述第二晶粒的一第一導體構件電性耦合的步驟;以及將上述第二導體層,與上述第一晶粒或上述第二晶粒的一第二導體構件電性耦合的步驟。上述第二導體構件不同於上述第一導體構件。作為又另一個例子,方法100可包括:在上述第一晶粒形成一第一金屬─絕緣體─金屬電容器的步驟並在上述第二晶粒形成一第二金屬─絕緣體─金屬電容器的步驟;以及以並聯的形式將上述第一金屬─絕緣體─金屬電容器與上述第二金屬─絕緣體─金屬電容器電性耦合在一起的步驟。作為又一個例子,在接合的步驟1070之前,方法1000包括將上述第一晶圓單片化與將上述第二晶圓單片化的步驟。為了簡化的緣故,在此不詳細討論其他額外步驟。
綜上所述,本發明實施例包括一封裝結構,其中將一超高密度金屬─絕緣體─金屬電容器嵌於三次元積體電路結構。例如,上述三次元積體電路結構包括接合在一起的二個晶粒,其中一基底貫穿孔可用來提供上述二個已接合的晶粒的構件之間的電性連接。上述超高密度金屬─絕緣體─金屬電容器可嵌於上述已接合的晶粒中的任一個或二者。在一些實施形態中,上述超高密度金屬─絕緣體─金屬電容器可嵌於上述已接合的晶粒的二者且可以以並聯的形式電性耦合在一起。在其他實施例中,上述超高密度金屬─絕緣體─金屬電容器可嵌於上述導體凸塊下(或是另外鄰接於上述導電凸塊)的一介電層。
基於以上的討論,可瞭解本發明實施例提供了超越傳統的鰭式場效電晶體的優點。然而,要瞭解的是,其他實施形態可提供額外的優點,且並非所有的優點都需要在此揭露,且沒有所有實施例都需要的特定優點。一項優點是,上述超高密度金屬─絕緣體─金屬電容器提供在調整一所需的電容值時的彈性,由於其多片多個介電層可獲得額外的電容值調整參數(或是自由度)。另一個優點是將上述超高密度金屬─絕緣體─金屬電容器嵌於一鈍化層,是意味著不需要額外的晶片的實際佔用面積(chip real estate)。又另一個優點是,由於一超高密度金屬─絕緣體─金屬電容器可裝置在每一個已接合的晶粒,而可達成電容值的增加。又另一個優點是,上述晶粒的不同種類的導體構件,例如連接墊、基底貫穿孔、金屬線等等,都可以用來作為上述超高密度金屬─絕緣體─金屬電容器的控制端子,在此處可達成超高密度金屬─絕緣體─金屬電容器的簡單的電性接續。其他優點包括與現有的製造及/或封裝的製程相容,而使本發明實施例不需要額外的加工且因此可容易且便宜地設置。
關於一些實施例,是提供一種積體電路裝置,其包括一第一晶粒與一第二晶粒。上述第一晶粒包括一第一基底、一第一互連結構、一第一介電層及複數個第一連接墊。上述第一基底包含第一電路系統,上述第一互連結構置於上述第一基底的上方,上述第一介電層置於上述第一互連結構的上方,上述第一連接墊置於上述第一介電層的上方。上述第二晶粒包括一第二基底、一第二互連結構、一第二介電層及複數個第二連接墊。上述第二基底包含第二電路系統,上述第二互連結構置於上述第二基底的上方,上述第二介電層置於上述第二互連結構的上方,上述第二連接墊置於上述第二介電層的上方。上述第一晶粒的上述第一連接墊連接於上述第二晶粒的上述第二連接墊,上述第一晶粒與上述第二晶粒的至少一個包括一金屬─絕緣體─金屬(metal-insulator-metal;MIM)電容器,上述金屬─絕緣體─金屬電容器包括逐一向上方堆疊的超過二層的金屬層。
在一實施例中,上述第一介電層或上述第二介電層包括一鈍化層,上述金屬─絕緣體─金屬電容器是嵌於上述鈍化層中。
在一實施例中,上述金屬─絕緣體─金屬電容器包括一第一金屬層、一第一介電材料、一第二金屬層、一第二介電材料及一第三金屬層,上述第一介電材料置於上述第一金屬層的上方,上述第二金屬層置於上述第一介電材料的上方,上述第二介電材料置於上述第二金屬層的上方,上述第三金屬層置於上述第二介電材料的上方。
在一實施例中,上述第二金屬層置於上述第一金屬層的一部分的上方,但非上述第一金屬層的全部的上方。
在一實施例中,上述第一晶粒或上述第二晶粒包括一第一導體墊與一第二導體墊,上述金屬─絕緣體─金屬電容器的上述第一金屬層與上述第三金屬層均電性耦合於上述第一導體墊,上述金屬─絕緣體─金屬電容器的上述第二金屬層電性耦合於上述第二導體墊。
在一實施例中,上述第一晶粒或上述第二晶粒包括一導體墊與一基底貫穿導孔(through substrate via;TSV),上述金屬─絕緣體─金屬電容器的上述第一金屬層與上述第三金屬層均電性耦合於上述導體墊,上述金屬─絕緣體─金屬電容器的上述第二金屬層電性耦合於上述基底貫穿導孔。
在一實施例中,上述金屬─絕緣體─金屬電容器是嵌於上述第一晶粒的一第一金屬─絕緣體─金屬電容器,上述第二晶粒包括一第二金屬─絕緣體─金屬電容器。在本實施例中,上述第二金屬─絕緣體─金屬電容器包括一第四金屬層、一第五金屬層及一第六金屬層,上述第五金屬層置於上述第四金屬層的上方,上述第六金屬層置於上述第五金屬層的上方。在本實施例中,上述第一金屬─絕緣體─金屬電容器與上述第二金屬─絕緣體─金屬電容器是以並聯的方式電性耦合。
在一實施例中,上述第一晶粒更包括一第一導體墊與一第一基底貫穿導孔(through substrate via;TSV),上述第二晶粒更包括一第二導體墊與一第二基底貫穿導孔,上述第一金屬─絕緣體─金屬電容器的上述第一金屬層與上述第三金屬層均電性耦合於上述第一導體墊,上述第一金屬─絕緣體─金屬電容器的上述第二金屬層電性耦合於上述第一基底貫穿導孔,上述第二金屬─絕緣體─金屬電容器的上述第四金屬層與上述第六金屬層均電性耦合於上述第二導體墊,上述第一金屬─絕緣體─金屬電容器的上述第五金屬層電性耦合於上述第二基底貫穿導孔,上述第一基底貫穿導孔與上述第二基底貫穿導孔電性耦合在一起。
在一實施例中,上述積體電路裝置更包括一第三介電層與複數個導體凸塊。在本實施例中,上述第三介電層置於上述第一基底的上方,上述第一互連結構置於上述第一基底的兩側。在本實施例中,上述複數個導體凸塊置於上述第三介電層的上方。在本實施例中,上述金屬─絕緣體─金屬電容器嵌於上述第三介電層中。
關於一些實施例,是提供一種積體電路裝置,其包括一第一晶粒、一第二晶粒與一電容器。上述第一晶粒與上述第二晶粒經由複數個連接墊而連接在一起,上述電容器嵌於上述第一晶粒與上述第二晶粒的至少一個。上述電容器包括超過二個金屬層,上述金屬層的一第一子集是電性且物理性連接於一第一導體構件,上述金屬層的一第二子集是電性且物理性連接於一第二導體構件,上述第二導體構件不同於上述第一導體構件。
在一實施例中,上述第一導體構件與上述第二導體構件的至少一個包括一導體墊。
在一實施例中,上述第一導體構件與上述第二導體構件的至少一個包括一基底貫穿導孔(through substrate via;TSV)。
在一實施例中,上述電容器是嵌於上述第一晶粒的一鈍化層或上述第二晶粒的一鈍化層。
在一實施例中,上述金屬層的上述第一子集與上述第二子集互為零交集。
在一實施例中,上述電容器是嵌於上述第一晶粒的一第一電容器。在本實施例中,上述積體電路裝置更包括一第二電容器,上述第二電容器嵌於上述第二晶粒。在本實施例中,上述第一電容器與上述第二電容器是以並聯的方式電性耦合。
關於一些實施例,是提供一種積體電路裝置的形成方法,其包括:提供一第一晶粒,上述第一晶粒包括一第一基底與一第一互連結構,上述第一互連結構形成在上述第一基底的上方;在上述第一互連結構形成一第一介電層;在上述第一介電層的上方形成一或多個第一連接墊;提供一第二晶粒,上述第二晶粒包括一第二基底與一第二互連結構,上述第二互連結構形成在上述第二基底的上方;在上述第二互連結構形成一第二介電層;在上述第二介電層的上方形成一或多個第二連接墊;以及將上述一或多個第一連接墊連接於上述一或多個第二連接墊。上述第一晶粒與上述第二晶粒的至少一個包括嵌於其中的一金屬─絕緣體─金屬(metal-insulator-metal;MIM)電容器。
在一實施例中,上述積體電路裝置的形成方法更包括將上述金屬─絕緣體─金屬電容器形成在上述第一晶粒或上述第二晶粒。在本實施例中,上述金屬─絕緣體─金屬電容器包括一第一導體層、一第一介電材料、一第二導體層、一第二介電材料及一第三導體層,上述第一介電材料形成在上述第一導體層的上方,上述第二導體層形成在上述第一介電材料的上方,上述第二介電材料形成在上述第二導體層的上方,上述第三導體層形成在上述第二介電材料的上方。
在一實施例中,上述積體電路裝置的形成方法更包括:以上述第一晶粒或上述第二晶粒的一第一導體構件電性耦合上述第一導體層與上述第三導體層;以及以上述第一晶粒或上述第二晶粒的一第二導體構件電性耦合上述第二導體層。在本實施例中,上述第二導體層不同於上述第一導體層。
在一實施例中,上述積體電路裝置的形成方法更包括在上述第一晶粒形成一第一金屬─絕緣體─金屬電容器,在上述第二晶粒形成一第二金屬─絕緣體─金屬電容器;以及將上述第一電容器與上述第二電容器以並聯的方式電性耦合。
在一實施例中,上述第一晶粒的提供包括提供包含上述第一晶粒的一第一晶圓,上述第二晶粒的提供包括提供包含上述第二晶粒的一第二晶圓。在本實施例中,上述積體電路裝置的形成方法更包括在接合之前,將上述第一晶圓單片化以及將上述第二晶圓單片化。
前述內文概述了許多實施例的特徵,使所屬技術領域中具有通常知識者可以從各個方面更佳地了解本發明實施例。所屬技術領域中具有通常知識者應可理解,且可輕易地以本發明實施例為基礎來設計或修飾其他製程及結構,並以此達到相同的目的及/或達到與在此介紹的實施例等相同之優點。所屬技術領域中具有通常知識者也應了解這些均等的結構並未背離本發明實施例的發明精神與範圍。在不背離本發明實施例的發明精神與範圍之前提下,可對本發明實施例進行各種改變、置換或修改。
100:積體電路結構
110:積體電路基底
115,315,415:電路系統
120,320,420:互連結構
130,330,430,610:金屬線
140:介電材料
150,270,350,450:鈍化膜
160,210,260,700,710,720,800,810,820:導體層
180:微影製程
190,220:沉積製程
200:介電層
265,395,495,895:超高密度金屬─絕緣體─金屬電容器
290,390,490,491:導體墊
300,400:晶粒
310,410:基底
335,570,571,580,581:基底貫穿孔
340,440,500,510,520,530,600,740,750,840,850:介電層
380A,380B,480A,480B:鈍化膜層
550,560,620:連接墊
585:膜框
590:填隙材料
630:導體凸塊
650:部分
1000:方法
1010,1020,1030,1040,1050,1060,1070:步驟
根據以下的詳細說明並配合所附圖式做完整揭露。應注意的是,根據本產業的一般作業,圖示並未必按照比例繪製。事實上,可能任意的放大或縮小元件的尺寸,以做清楚的說明。
第1圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第2圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第3圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第4圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第5圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第6圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第7圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第8圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第9圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第10圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第11圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第12圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第13圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第14圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第15圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第16圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第17圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第18圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第19圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第20圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第21圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第22圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第23圖是一積體電路裝置(或其一部分)的一剖面側視圖,根據本發明實施例的各種面向,在各種製造階段所建構。
第24圖是製造一積體電路裝置的方法的一流程圖,根據本發明實施例的一實施形態。
315,415:電路系統
320,420:互連結構
330,430:金屬線
395,495:超高密度金屬一絕緣體一金屬電容器
390,490:導體墊
300,400:晶粒
310,410:基底
335:基底貫穿孔
340,440,500,510,520,530:介電層
550,560:連接墊
570,580:基底貫穿孔
590:填隙材料
Claims (1)
- 一種積體電路裝置,包括: 一第一晶粒,其包括一第一基底、一第一互連結構、一第一介電層及複數個第一連接墊,該第一基底包含第一電路系統,該第一互連結構置於該第一基底的上方,該第一介電層置於該第一互連結構的上方,該些第一連接墊置於該第一介電層的上方;以及 一第二晶粒,其包括一第二基底、一第二互連結構、一第二介電層及複數個第二連接墊,該第二基底包含第二電路系統,該第二互連結構置於該第二基底的上方,該第二介電層置於該第二互連結構的上方,該些第二連接墊置於該第二介電層的上方;其中 該第一晶粒的該些第一連接墊連接於該第二晶粒的該些第二連接墊; 該第一晶粒與該第二晶粒的至少一個包括一金屬─絕緣體─金屬(metal-insulator-metal;MIM)電容器;以及 該金屬─絕緣體─金屬電容器包括逐一向上方堆疊的超過二層的金屬層。
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US16/697,797 US11133304B2 (en) | 2019-11-27 | 2019-11-27 | Packaging scheme involving metal-insulator-metal capacitor |
US16/697,797 | 2019-11-27 |
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US20210159224A1 (en) | 2021-05-27 |
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