TW202131757A - 陶瓷加熱器 - Google Patents

陶瓷加熱器 Download PDF

Info

Publication number
TW202131757A
TW202131757A TW109146175A TW109146175A TW202131757A TW 202131757 A TW202131757 A TW 202131757A TW 109146175 A TW109146175 A TW 109146175A TW 109146175 A TW109146175 A TW 109146175A TW 202131757 A TW202131757 A TW 202131757A
Authority
TW
Taiwan
Prior art keywords
thermocouple
ceramic plate
ceramic
curved portion
passage
Prior art date
Application number
TW109146175A
Other languages
English (en)
Other versions
TWI773053B (zh
Inventor
松下諒平
本山修一郎
Original Assignee
日商日本碍子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本碍子股份有限公司 filed Critical 日商日本碍子股份有限公司
Publication of TW202131757A publication Critical patent/TW202131757A/zh
Application granted granted Critical
Publication of TWI773053B publication Critical patent/TWI773053B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

陶瓷加熱器10係包括：陶瓷板20，係在表面具有晶圓載置面20a；電阻發熱體22、24，係被埋設於陶瓷板20；筒狀軸40，係從陶瓷板20之背面20b支撐陶瓷板20；以及熱電偶通路26，係從陶瓷板20之背面20b中被筒狀軸40包圍之軸內區域20d的起點26s至陶瓷板20之外周部的終端位置26e。熱電偶通路26係在起點26s與終端位置26e之間具有曲線部26c。

Description

陶瓷加熱器
本發明係有關於一種陶瓷加熱器。
以往，作為陶瓷加熱器，係已知被稱為2區加熱器者，該2區加熱器係在具有晶圓載置面之圓板形之陶瓷板的內周側與外周側分別獨立地埋入電阻發熱體。例如，在專利文獻1，係揭示圖10所示之陶瓷加熱器410。此陶瓷加熱器410係藉外周側熱電偶450測量陶瓷板420之外周側的溫度。熱電偶導件432係在筒狀軸440之內部從下方向上方筆直地延伸後被彎曲成圓弧形，而方向轉換90°。此熱電偶導件432係被安裝於狹縫426a，該狹縫426a係被設置於陶瓷板420之背面中被筒狀軸440包圍的區域。狹縫426a係形成熱電偶通路426的入口部分。外周側熱電偶450係被插入熱電偶導件432的筒內，並到達熱電偶通路426的終端位置。 [先行專利文獻] [專利文獻]
專利文獻1：國際公開第2012/039453號小冊(圖11)
[發明所欲解決之課題]
可是，因為熱電偶通路426係在一方向筆直地延伸，所以根據測溫位置，係會與陶瓷板420內之障礙物衝撞。因此，測溫位置的設計自由度會受到限制。
本發明係為了解決這種課題所開發者，其主要目的在於提高測溫位置之設計自由度。 [解決課題之手段]
本發明之陶瓷加熱器係， 包括： 陶瓷板，係在表面具有晶圓載置面； 電阻發熱體，係被埋設於該陶瓷板； 筒狀軸，係從該陶瓷板之背面支撐該陶瓷板；以及 熱電偶通路，係從該陶瓷板之該背面中被該筒狀軸包圍之軸內區域的起點至該陶瓷板之外周部的終端位置； 該熱電偶通路係在該起點與該終端位置之間具有曲線部。
在此陶瓷加熱器，熱電偶通路係在起點與終端位置之間具有曲線部。即使在陶瓷板內有障礙物，亦可藉曲線部迴避該障礙物。因此，測溫位置的設計自由度變高。
在本發明之陶瓷加熱器，亦可該曲線部係被設置成迴避在該陶瓷板所設置之既定部位。既定部位係例如，列舉在厚度方向貫穿陶瓷板之孔(升降銷孔、氣體孔等)或電阻發熱體被配線的部位等。
在本發明之陶瓷加熱器，亦可該曲線部係在該陶瓷板之面方向彎曲。依此方式，可易於迴避在厚度方向貫穿陶瓷板之孔等。
在本發明之陶瓷加熱器，亦可該曲線部係在該陶瓷板之厚度方向彎曲。依此方式，可易於迴避電阻發熱體，而該電阻發熱體係在陶瓷板內被埋設成與晶圓載置面大致平行。在此情況，亦可該終端位置係被設置於該陶瓷板之中埋設該電阻發熱體的面與該晶圓載置面之間。依此方式，因為是測溫位置之終端位置係接近晶圓載置面，所以熱電偶之測溫結果與晶圓之表面溫度的差變小，而可得到更實用性的測溫結果。
在本發明之陶瓷加熱器，該曲線部之曲率半徑係20mm以上較佳。依此方式，在熱電偶通路可比較圓滑地插入熱電偶。
本發明之陶瓷加熱器，係亦可更具有熱電偶，該熱電偶係被插入該熱電偶通路，並頭端的測溫部到達該終端位置。
一面參照圖面一面在以下說明本發明之適合的實施形態。圖1係陶瓷加熱器10之立體圖，圖2係圖1之A－A的剖面圖，圖3係圖1之B－B的剖面圖，圖4係從陶瓷板20之背面20b觀察熱電偶通路26時的平面圖，圖5係熱電偶導件32的正視圖。
陶瓷加熱器10係為了對被施加蝕刻或CVD等之處理的晶圓W加熱所使用，並被設置於未圖示之真空室內。此陶瓷加熱器10係包括：圓盤形之陶瓷板20，係具有晶圓載置面20a；及筒狀軸40，係與陶瓷板20之和晶圓載置面20a係相反側的面(背面)20b接合。
陶瓷板20係是由陶瓷材料所構成之圓盤形的板，該陶瓷材料係由氮化鋁或氧化鋁等所代表。陶瓷板20之直徑係無特別地限定，例如是約300mm。陶瓷板20係藉與陶瓷板20成同心圓形的虛擬邊界20c(參照圖3)被劃分成小圓形的內周側區Z1與圓環形的外周側區Z2。在陶瓷板20之內周側區Z1，係埋設內周側電阻發熱體22，而在外周側區Z2，係埋設外周側電阻發熱體24。兩電阻發熱體22、24係由以例如鉬、鎢或碳化鎢為主成分的線圈所構成。陶瓷板20係如圖2所示，藉由將上側板P1與比該上側板P1更薄的下側板P2進行面接合所製作。
筒狀軸40係與陶瓷板20一樣，由氮化鋁、氧化鋁等之陶瓷所形成。筒狀軸40係上端的凸緣部40a與陶瓷板20被進行擴散接合。
內周側電阻發熱體22係如圖3所示，以如下之方式所形成，從一對端子22a、22b的一方發端，並一面按照一筆畫之要領在複數個折回部被折回一面被配線於內周側區Z1之約整個區域後，至一對端子22a、22b的另一方。一對端子22a、22b係被設置於軸內區域20d(陶瓷板20之背面20b中筒狀軸40的內側區域)。在一對端子22a、22b，係分別金屬製(例如Ni製)之供電棒42a、42b被接合。
外周側電阻發熱體24係如圖3所示，以如下之方式所形成，從一對端子24a、24b的一方發端，並一面按照一筆畫之要領在複數個折回部被折回一面被配線於外周側區Z2之約整個區域後，至一對端子24a、24b的另一方。一對端子24a、24b係被設置於陶瓷板20之背面20b的軸內區域20d。在一對端子24a、24b，係分別金屬製(例如Ni製)之供電棒44a、44b被接合。
陶瓷板20係如圖3所示，具有在厚度方向貫穿陶瓷板20之複數個(此處係3個)升降銷孔H1~H3。3個升降銷孔H1~H3係隔著既定角度(此處係120°)被配置於與陶瓷板20同心圓上。在升降銷孔H1~H3，係未圖示之升降銷被插入成可進行上下動作。升降銷係為了使晶圓W對晶圓載置面20a進行上下動作所使用。
在陶瓷板20之內部，係如圖2及圖3所示，與晶圓載置面20a平行地設置用以插入外周側熱電偶50之長孔形狀的熱電偶通路26。熱電偶通路26係從陶瓷板20之背面20b中軸內區域20d的起點26s延伸至在陶瓷板20之外周側所設置的終端位置26e。終端位置26e係如圖3及圖4所示，被設置成位於通過升降銷孔H1並與陶瓷板20之半徑一致的直線70上，且比升降銷孔H1更外周側。熱電偶通路26之中，從起點26s至凸緣部40a的入口部分係成為用以嵌入熱電偶導件32之彎曲部34的頭端之長槽形狀的導入部26a。導入部26a係向軸內區域20d開口。熱電偶通路26係在起點26s與終端位置26e之間具有彎曲成大致C字形的曲線部26c。曲線部26c係在陶瓷板20之面方向彎曲，並被設置成迴避升降銷孔H1。陶瓷板20係藉由將下側板P2與上側板P1接合所製造，該下側板P2係導入部26a被設置成貫穿孔，該上側板P1係熱電偶通路26中導入部26a以外的部分被挖成曲線槽。
熱電偶導件32係如圖5所示，是具有導孔32a之金屬製(例如不銹鋼製)的筒形構件。熱電偶導件32係包括對晶圓載置面20a在垂直方向延伸的垂直部33、與從垂直方向轉換成水平方向的彎曲部34。垂直部33之外徑係比彎曲部34之外徑大，但是垂直部33之內徑係與彎曲部34之內徑相同。藉由依此方式使彎曲部34之外徑變小，可使插入彎曲部34的熱電偶通路26之導入部26a的寬度變窄。但，亦可將垂直部33之外徑與彎曲部34之外徑作成相同。彎曲部34之曲率半徑R係無特別地限定，例如是約30mm。在熱電偶導件32的導孔32a，係插入外周側熱電偶50。彎曲部34的頭端係亦可只是被嵌入導入部26a內，亦可與導入部26a內被接合或黏接。
在筒狀軸40之內部，係如圖2示，除了熱電偶導件32以外，還配置供電棒42a、42b或供電棒44a、44b，該供電棒42a、42b係與內周側電阻發熱體22之一對端子22a、22b的各個連接，該供電棒44a、44b係與外周側電阻發熱體24之一對端子24a、24b的各個連接。在筒狀軸40之內部，係亦配置內周側熱電偶48或外周側熱電偶50，而該內周側熱電偶48係用以測量陶瓷板20的中央之附近的溫度，該外周側熱電偶50係用以測量陶瓷板20的外周之附近的溫度。內周側熱電偶48係被插入在陶瓷板20之軸內區域20d所設置的凹部49，並頭端的測溫部48a與陶瓷板20接觸。凹部49係被設置於與各端子22a、22b、24a、24b或熱電偶通路26之導入部26a不會發生干涉的位置。外周側熱電偶50係護套熱電偶，並被配置成通過熱電偶導件32的導孔32a及熱電偶通路26。外周側熱電偶50之頭端的測溫部50a係通過熱電偶通路26並與終端位置26e接觸。
其次，說明陶瓷加熱器10之使用例。首先，在未圖示之真空室內設置陶瓷加熱器10，再將晶圓W載置於該陶瓷加熱器10的晶圓載置面20a。然後，將向內周側電阻發熱體22供給之電力調整成藉內周側熱電偶48所檢測出的溫度成為預定之內周側目標溫度，而且將向外周側電阻發熱體24供給之電力調整成藉外周側熱電偶50所檢測出的溫度成為預定之外周側目標溫度。藉此，晶圓W之溫度被控制成成為所要的溫度。接著，將真空室內設定成成為真空環境或降壓環境，在真空室內產生電漿，並利用該電漿對晶圓W實施CVD成膜或蝕刻。
在以上所說明之本實施形態的陶瓷加熱器10，熱電偶通路26係在起點26s與終端位置26e之間具有曲線部26c。因此，即使在陶瓷板20內有如升降銷孔H1之障礙物，亦可藉曲線部26c迴避該障礙物。因此，外周側熱電偶50之測溫位置的設計自由度變高。
又，因為曲線部26c係在陶瓷板20之面方向彎曲，所以可易於迴避在厚度方向貫穿陶瓷板20的升降銷孔H1。
進而，是外周側熱電偶50的測溫位置之熱電偶通路26的終端位置26e係被設置於升降銷孔H1的外周側。具體而言，終端位置26e係被設置成位於通過升降銷孔H1並與陶瓷板20之半徑一致的直線70上，且比升降銷孔H1更外周側。因此，無法成直線地連接軸內區域20d的起點26s與終端位置26e。因此，在熱電偶通路26設置曲線部26c的意義大。
進而又，曲線部26c之曲率半徑係20mm以上較佳。依此方式，可在熱電偶通路26比較圓滑地插入外周側熱電偶50。實際上，形成曲線部26c之曲率半徑為20mm的熱電偶通路26並插入外周側熱電偶50複數次時，在大部分的事例，外周側熱電偶50係圓滑地通過曲線部26c，但是在部分的事例，有外周側熱電偶50在曲線部26c彎曲而未圓滑地通過的情況。另一方面，形成曲線部26c之曲率半徑為30mm的熱電偶通路26並插入外周側熱電偶50複數次時，在所有的事例，外周側熱電偶50係圓滑地通過曲線部26c。因此，曲線部26c之曲率半徑係30mm以上更佳。
此外，本發明係絲毫未被限定為上述之實施形態，只要屬於本發明的技術性範圍，當然能以各種的形態實施。
在上述之實施形態，係將熱電偶通路26之終端位置26e設置於升降銷孔H1之外周側，但是，不特別地限定為此。例如，如圖6所示，亦可將熱電偶通路26之終端位置26e設置於偏離通過升降銷孔H1並與陶瓷板20之半徑一致的直線70的位置。在圖6，係在長槽形狀之導入部26a的軸線26A上設置升降銷孔H1。此處，軸線26A係作成與直線70重疊。在圖6，係對與上述之實施形態相同的構成元件，係附加相同的符號。在此情況，沿著導入部26a的軸線26A成直線地設置熱電偶通路時，該熱電偶通路係會與升降銷孔H1相撞。因此，為了迴避之，在熱電偶通路26，係設置曲線部26c。
在上述之實施形態，係作為曲線部26c，舉例表示在陶瓷板20之面方向彎曲者，但是，不特別地限定為此。例如，如圖7所示，亦可將熱電偶通路126之曲線部126c設置成在起點126s與終端位置126e之間在陶瓷板20的厚度方向彎曲。曲線部126c之曲率半徑係20mm以上較佳，是30mm以上更佳。在圖7，將熱電偶通路126之終端位置126e設置於晶圓載置面20a與陶瓷板20中埋設外周側電阻發熱體24的面之間，並將外周側熱電偶150之測溫部150a配置成與終端位置126e接觸。在圖7，係對與上述之實施形態相同的構成元件，係附加相同的符號。依此方式，熱電偶通路126係藉曲線部126c可易於迴避內周側及外周側電阻發熱體22、24，而該內周側及外周側電阻發熱體22、24係在陶瓷板20內被埋設成與晶圓載置面20a大致平行。又，因為終端位置126e(測溫部150a之位置)係接近晶圓載置面20a，所以外周側熱電偶150之測溫結果與晶圓W之表面溫度的差變小，而可得到更實用性的測溫結果。在此情況，亦可作成使熱電偶通路126中通過設置電阻發熱體22、24之面的部分通過多區加熱器的加熱器區域之間(內周側區Z1與外周側區Z2之間)。依此方式，可使熱電偶通路126之對內周側及外周側電阻發熱體22、24的影響變小。
在上述之實施形態，係將從熱電偶通路26之導入部26a的端部至終端位置26e的區間整體作為曲線部26c，但是，不特別地限定為此。例如，如圖8所示，亦可熱電偶通路26中從導入部26a的端部至升降銷孔H1之正前的區間係沿著導入部26a之軸線26A設置，而只有從升降銷孔H1之正前至終端位置26e的區間，設置成成為大致C字形的曲線部26c。
在上述之實施形態，係將熱電偶通路26之曲線部26c作成大致C字形，但是，不特別地限定為此。例如，如圖9所示，在導入部26a之軸線26A上設置升降銷孔H1與氣體孔h1(在厚度方向貫穿陶瓷板20，並用以向晶圓W之背面側供給He氣的孔)的情況，亦可將曲線部26c作成大致S字形，以迴避升降銷孔H1與氣體孔h1之雙方。此外，除此以外，亦可將曲線部26c作成將S字或C字適當地組合的形狀或隨機地彎曲的形狀。
在上述之實施形態，亦可熱電偶通路26係將在陶瓷板20之面方向彎曲的曲線部與在厚度方向彎曲的曲線部組合。例如，可藉在面方向彎曲的曲線部迴避升降銷孔，且藉在厚度方向彎曲的曲線部迴避內周側及外周側電阻發熱體，並使終端位置(測溫部之位置)接近晶圓載置面。
在上述之實施形態，係將兩電阻發熱體22、24作成線圈形狀，但是不是特別地被限定為線圈形狀，例如亦可是印刷圖案，亦可是帶形狀或網孔形狀等。
在上述之實施形態，亦可在陶瓷板20，不僅內建電阻發熱體22、24，而且內建靜電電極或RF電極。
在上述之實施形態，係舉例表示所謂的2區加熱器，但是未特別地限定為2區加熱器。例如，亦可將內周側區Z1劃分成複數個內周側小區，並在各內周側小區按照一筆畫之要領到處拉電阻發熱體。又，亦可將外周側區Z2劃分成複數個外周側小區，並在各外周側小區按照一筆畫之要領到處拉電阻發熱體。內周側及外周側小區的形狀係亦可作成環形，亦可作成扇形，亦可作成其他的形狀。
在上述之實施形態，係將熱電偶導件32安裝於熱電偶通路26的導入部26a，但是亦可在將外周側熱電偶50插入熱電偶通路26時係將熱電偶導件32配置於導入部26a，而在將外周側熱電偶50插入熱電偶通路26後，係除去熱電偶導件32。或者，亦可不使用熱電偶導件32地將外周側熱電偶50插入熱電偶通路26。
在上述之實施形態，在將熱電偶通路26作成截面大致四角形之通路的情況，通路內的面與面之間的邊界(例如底面與側面的邊界)係為了避免邊緣尖銳而成為C面或R面較佳。
在上述之實施形態，外周側熱電偶50之外徑d係作成0.5mm以上且2mm以下較佳。若外徑d未滿0.5mm，係在將外周側熱電偶50插入熱電偶通路26時會彎曲，而難插入至終端位置26e。外徑d超過2mm時，因為外周側熱電偶50缺乏柔軟性，所以難將外周側熱電偶50插入至終端位置26e。
在上述之實施形態，終端位置26e係在外周側熱電偶50之測溫部50a為凸狀曲面的情況，亦可將熱電偶通路26之終端面(在終端位置26e之立壁)的立壁中測溫部50a所接觸的部分作成凹狀曲面。依此方式，因為外周側熱電偶50之測溫部50a進行面接觸或在接近面接觸之狀態接觸，所以測溫精度提高。
本專利申請係將於2020年2月3日所申請之日本專利申請第2020－016116號作為優先權主張的基礎，藉引用在本專利說明書包含其內容的全部。
10:陶瓷加熱器 20:陶瓷板 20a:晶圓載置面 20b:背面 22:內周側電阻發熱體 24:外周側電阻發熱體 22a,22b,24a,24b:端子 42a,42b,44a,44b:供電棒 40:筒狀軸 W:晶圓
[圖1] 係陶瓷加熱器10之立體圖。 [圖2] 係圖1之A－A的剖面圖。 [圖3] 係圖1之B－B的剖面圖。 [圖4] 係從陶瓷板20之背面20b觀察熱電偶通路26時的平面圖。 [圖5] 係熱電偶導件32的正視圖。 [圖6] 係從陶瓷板20之背面20b觀察熱電偶通路26之變形例時的平面圖。 [圖7] 係陶瓷加熱器10之變形例的縱向剖面圖。 [圖8] 係從陶瓷板20之背面20b觀察熱電偶通路26之變形例時的平面圖。 [圖9] 係從陶瓷板20之背面20b觀察熱電偶通路26之變形例時的平面圖。 [圖10] 係習知例的說明圖。
10:陶瓷加熱器
20:陶瓷板
20a:晶圓載置面
20b:背面
40:筒狀軸
W:晶圓

Claims (7)

  1. 一種陶瓷加熱器，其係： 包括： 陶瓷板，係在表面具有晶圓載置面； 電阻發熱體，係被埋設於該陶瓷板； 筒狀軸，係從該陶瓷板之背面支撐該陶瓷板；以及 熱電偶通路，係從該陶瓷板之該背面中被該筒狀軸包圍之軸內區域的起點至該陶瓷板之外周部的終端位置； 該熱電偶通路係在該起點與該終端位置之間具有曲線部。
  2. 如請求項1之陶瓷加熱器，其中該曲線部係被設置成迴避在該陶瓷板所設置之既定部位。
  3. 如請求項1或2之陶瓷加熱器，其中該曲線部係在該陶瓷板之面方向彎曲。
  4. 如請求項1~3中任一項之陶瓷加熱器，其中該曲線部係在該陶瓷板之厚度方向彎曲。
  5. 如請求項4之陶瓷加熱器，其中該終端位置係被設置於該陶瓷板之中埋設該電阻發熱體的面與該晶圓載置面之間。
  6. 如請求項1~5中任一項之陶瓷加熱器，其中該曲線部之曲率半徑係20mm以上。
  7. 如請求項1~6中任一項之陶瓷加熱器，其中具有熱電偶，該熱電偶係被插入該熱電偶通路，並頭端的測溫部到達該終端位置。
TW109146175A 2020-02-03 2020-12-25 陶瓷加熱器 TWI773053B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020016116A JP7202322B2 (ja) 2020-02-03 2020-02-03 セラミックヒータ
JP2020-016116 2020-02-03

Publications (2)

Publication Number Publication Date
TW202131757A true TW202131757A (zh) 2021-08-16
TWI773053B TWI773053B (zh) 2022-08-01

Family

ID=77062154

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109146175A TWI773053B (zh) 2020-02-03 2020-12-25 陶瓷加熱器

Country Status (5)

Country Link
US (1) US20210242053A1 (zh)
JP (1) JP7202322B2 (zh)
KR (1) KR102597235B1 (zh)
CN (1) CN113286385B (zh)
TW (1) TWI773053B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7566185B1 (ja) 2023-11-20 2024-10-11 ミコ セラミックス リミテッド セラミックヒーター

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001135715A (ja) * 1999-08-24 2001-05-18 Ibiden Co Ltd 測温素子および半導体製造装置用セラミック基材
US20030098299A1 (en) * 2000-03-06 2003-05-29 Ibiden Co., Ltd. Ceramic heater
JP3516392B2 (ja) * 2000-06-16 2004-04-05 イビデン株式会社 半導体製造・検査装置用ホットプレート
US20060157472A1 (en) * 2002-08-20 2006-07-20 Kazutaka Mashima Metal heater
US20060127067A1 (en) * 2004-12-13 2006-06-15 General Electric Company Fast heating and cooling wafer handling assembly and method of manufacturing thereof
US9275887B2 (en) * 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
JP2009074978A (ja) * 2007-09-21 2009-04-09 Fenwall Controls Of Japan Ltd 温度センサ及び温度センサの製造方法
KR101456892B1 (ko) * 2008-07-01 2014-10-31 브룩스 오토메이션, 인크. 극저온 펌프에 대한 온도 제어를 제공하기 위한 방법 및 장치
JP5791412B2 (ja) * 2010-07-26 2015-10-07 日本碍子株式会社 セラミックヒーター
TWI501339B (zh) * 2010-09-24 2015-09-21 Ngk Insulators Ltd Semiconductor manufacturing device components
JP2012080103A (ja) * 2010-10-01 2012-04-19 Ngk Insulators Ltd サセプター及びその製法
WO2012056807A1 (ja) * 2010-10-25 2012-05-03 日本碍子株式会社 セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材
JP2012160368A (ja) * 2011-02-01 2012-08-23 Nihon Ceratec Co Ltd セラミックスヒータ及びその製造方法
JP5980551B2 (ja) * 2011-07-13 2016-08-31 株式会社日立国際電気 温度検出部、基板処理装置、及び半導体装置の製造方法
WO2013162000A1 (ja) * 2012-04-27 2013-10-31 日本発條株式会社 基板支持装置及び基板支持装置に熱電対を配設する方法
US9984866B2 (en) * 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
KR102171734B1 (ko) * 2013-03-15 2020-10-29 컴포넌트 알이-엔지니어링 컴퍼니, 인코포레이티드 멀티플 존 히터
US10840117B2 (en) * 2016-09-12 2020-11-17 Ngk Spark Plug Co., Ltd. Holding apparatus
JP6704837B2 (ja) * 2016-10-31 2020-06-03 日本特殊陶業株式会社 保持装置
WO2019157023A1 (en) * 2018-02-09 2019-08-15 Applied Materials, Inc. Semiconductor processing apparatus having improved temperature control
KR102078157B1 (ko) * 2018-04-16 2020-02-17 세메스 주식회사 기판 가열 유닛 및 이를 갖는 기판 처리 장치

Also Published As

Publication number Publication date
CN113286385A (zh) 2021-08-20
JP7202322B2 (ja) 2023-01-11
JP2021125500A (ja) 2021-08-30
CN113286385B (zh) 2024-03-29
KR102597235B1 (ko) 2023-11-03
KR20210098859A (ko) 2021-08-11
US20210242053A1 (en) 2021-08-05
TWI773053B (zh) 2022-08-01

Similar Documents

Publication Publication Date Title
TWI767164B (zh) 陶瓷加熱器
TW202131757A (zh) 陶瓷加熱器
JP7348877B2 (ja) セラミックヒータ及びその製法
TWI730547B (zh) 陶瓷加熱器
TW202133681A (zh) 陶瓷加熱器以及其製造方法
TW202133679A (zh) 陶瓷加熱器
TW202137810A (zh) 陶瓷加熱器以及熱電偶導件
TWI798712B (zh) 熱電偶導件以及陶瓷加熱器
TW202133680A (zh) 陶瓷加熱器
CN111656860B (zh) 陶瓷加热器
KR102594930B1 (ko) 열전대 가이드 및 세라믹 히터