TW202129020A - 半導體裝置用銅接合線及半導體裝置 - Google Patents
半導體裝置用銅接合線及半導體裝置 Download PDFInfo
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- wire
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- 239000010949 copper Substances 0.000 title claims abstract description 72
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 69
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000005259 measurement Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 238000001887 electron backscatter diffraction Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 22
- 239000013078 crystal Substances 0.000 abstract description 11
- 239000002019 doping agent Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 11
- 238000005491 wire drawing Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000009749 continuous casting Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 nitrogen containing hydrogen Chemical class 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 238000010525 oxidative degradation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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Abstract
本發明提供一種在大氣中之存放壽命得以提高之銅接合線。即,本發明提供一種表面之晶粒界密度為0.6(μm/μm2
)以上1.6(μm/μm2
)以下之半導體裝置用銅接合線。
Description
本發明係關於一種半導體裝置用銅接合線。進而,本發明係關於一種包含該銅接合線之半導體裝置。
半導體裝置係藉由接合線將半導體晶片上所形成之電極與引線框架或基板上之電極之間連接。目前為止,接合線之材料以金(Au)為主流,但現在以LSI(Large Scale Integration,大型積體電路)用途為中心不斷以銅(Cu)來代替(例如,專利文獻1~3)。又,於功率半導體用途中,亦因高導熱率或高熔斷電流而期待以高效率且可靠性亦較高之Cu來代替。
銅接合線係纏繞於捲線筒而成為捲裝體後,藉由阻隔氧氣或水分等之阻隔袋將該捲裝體密封而出貨。並且,於半導體裝置之製造中,阻隔袋係於即將供電極間連接之前才開封。銅接合線因大氣中之氧氣或水分等之影響而發生表面氧化且連接性容易劣化,故而開封後之存放期限一般為一週。
然而,存在開封後一週內未用盡而廢棄之情況。又,捲裝體之線長(捲繞長度)被限制為較短,於該情形時,無法避免捲裝體之更換頻率增加、每次都需停線等生產效率降低之情況。因此,要求提高銅接合線在大氣中之存放壽命。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開昭61-48543號公報
[專利文獻2]日本專利特表2018-503743號公報
[專利文獻3]國際公開第2017/221770號
[發明所欲解決之問題]
本發明之課題在於提供一種在大氣中之存放壽命得以提高之銅接合線。
[解決問題之技術手段]
本發明人等基於上述問題進行了銳意研究,結果發現藉由具有下述構成之銅接合線可解決上述問題,基於該見解進一步反覆研究而完成本發明。
即,本發明包括以下內容。
[1]一種半導體裝置用銅接合線,其表面之晶粒界密度為0.6(μm/μm2
)以上1.6(μm/μm2
)以下。
[2]如[1]中所記載之銅接合線,其表面之晶粒界密度係以如下方式算出:藉由EBSD法於測定點間隔為0.06 μm以上0.6 μm以下之條件下進行測定,於將相鄰測定點間之方位差為15°以上之邊界視為晶粒界之情形時,用晶粒界之總長度(μm)除以測定面積(μm2
)。
[3]如[2]中所記載之銅接合線,其表面之晶粒界密度以如下條件測定:以在與線長軸垂直之方向上的線之寬度之中心成為測定面之寬度之中心之方式進行定位,且測定面之寬度成為線直徑之20%以上40%以下,測定面之長度成為測定面之寬度之5倍。
[4]如[1]至[3]中任一項所記載之銅接合線,其包含純度為99.9質量%以上之銅。
[5]如[1]至[4]中任一項所記載之銅接合線,其線直徑為15 μm以上300 μm以下。
[6]如[1]至[5]中任一項所記載之銅接合線,其斷裂強度為145 MPa以上。
[7]一種半導體裝置,其包含如[1]~[6]中任一項所記載之銅接合線。
[發明之效果]
根據本發明,可提供一種在大氣中之存放壽命得以提高之銅接合線。
以下,對本發明根據其較佳實施方式進行詳細說明。
[半導體裝置用銅接合線]
本發明之半導體裝置用銅接合線之特徵在於:表面之晶粒界密度為0.6(μm/μm2
)以上1.6(μm/μm2
)以下。
作為表示接合線之結晶組織之指標,已知有平均結晶粒徑,為了實現所預期之線性狀,此前就進行了將該平均結晶粒徑調整至一定範圍之措施。例如,揭示有一種根據與線之環境抗力或連接可靠性之關聯,添加一定量之摻雜劑,並且將線之平均結晶粒徑調整至一定範圍之技術(例如,日本專利特表2018-503743號公報、國際公開說明書WO2017/221770等)。此處,本發明人等根據與銅接合線在大氣中之存放壽命之關聯,對線之平均結晶粒徑等之影響進行了研究。結果確認了在大氣中之存放壽命與線之平均結晶粒徑不一定相關。
本發明人等於為了提高銅接合線在大氣中之存放壽命而進行銳意研究之過程中發現線表面之晶粒界密度與在大氣中之存放壽命密切相關,從而完成本發明。再者,上述平均結晶粒徑如Hall-petch之經驗規律所代表般,有時用作表示多晶材料之強度特性或接合材料之接合強度等整體特性之指標,此時,該平均結晶粒徑與晶粒界密度以相同意義使用。然而,發現於以如在大氣中之存放壽命等材料之表面特性作為對象之情形時,該特性與平均結晶粒徑不一定相關,另一方面,該特性與晶粒界密度密切相關。
於本發明中,所謂晶粒界密度意指每單位面積(μm2
)中所存在之晶粒界之總長度(μm),且係表示每單位面積存在多少晶粒界之指標。
要想實現在大氣中之存放壽命得以提高之銅接合線,表面之晶粒界密度之上限為1.6(μm/μm2
)以下,較佳為1.55(μm/μm2
)以下,更佳為1.5(μm/μm2
)以下、1.45(μm/μm2
)以下或1.4(μm/μm2
)以下。
要想實現呈現充分之斷裂強度且可穩定形成所需之線弧形狀的銅接合線,表面之晶粒界密度之下限為0.6(μm/μm2
)以上,較佳為0.65(μm/μm2
)以上、0.7(μm/μm2
)以上、0.75(μm/μm2
)以上、0.8(μm/μm2
)以上或0.85(μm/μm2
)以上。
於本發明中,表面之晶粒界密度係以線表面作為觀察面,藉由EBSD(背向散射電子繞射、Electron Backscattered Diffraction)法進行測定、算出。詳細而言,藉由EBSD法於測定點間隔為0.06 μm以上0.6 μm以下之條件下進行測定,於將相鄰測定點間之方位差為15°以上之邊界視為晶粒界之情形時,用晶粒界之總長度(μm)除以測定面積(μm2
)而算出。此處,晶粒界之總長度係求出藉由EBSD解析軟體Aztec HKL(牛津儀器股份有限公司製造)所獲得之柱狀圖中、相鄰測定點間之方位差為15°以上之邊界之度數,對該度數乘以測定點間隔而算出。
藉由EBSD法測定、算出表面之晶粒界密度時,測定面之位置及尺寸以如下方式決定。再者,以下,所謂測定面之寬度係指測定面在與線長軸垂直之方向上之尺寸,所謂測定面之長度係指測定面在線長軸之方向上之尺寸。
首先,將供測定之銅接合線直線狀地固定於試樣架。繼而,以在與線長軸垂直之方向上的線之寬度之中心(即,在與線長軸垂直之方向上觀察線表面時線之寬度之中心)成為測定面之寬度之中心之方式進行定位,且以測定面之寬度成為線直徑之20%以上40%以下之方式決定測定面。藉由如上所述決定測定面之位置及尺寸,可抑制線表面之曲率之影響且精度良好地測定、算出表面之晶粒界密度。測定面之長度設定為測定面之寬度之5倍。又,對在線長度方向上彼此相隔1 mm以上之複數處(n≧3)測定面實施,取其平均值較佳。
本發明之銅接合線包含銅或銅合金。要想進一步享有本發明之效果,線中之銅之含量較佳為99.9質量%以上,更佳為99.99質量%以上或99.999質量%以上。
可向本發明之銅接合線中添加已知可賦予環境抗力之任意摻雜劑。作為該摻雜劑,例如可列舉:鈧(Sc)或釔(Y)等稀土類元素;磷(P)、錫(Sn)、鋅(Zn)、鎳(Ni)及矽(Si)。摻雜劑之含量可設為1質量ppm以上、3質量ppm以上、5質量ppm以上或10質量ppm以上等,該含量之上限可設為500質量ppm以下、400質量ppm以下、300質量ppm以下或200質量ppm以下等。因此,於一實施方式中,本發明之銅接合線含有1~500質量ppm之選自由稀土類元素、P、Sn、Zn、Ni及Si所組成之群中之1種以上之元素。於不添加該摻雜劑之情形或者添加量為極微量(例如100質量ppm以下、50質量ppm以下、30質量ppm以下等)之情形時,本發明之銅接合線亦可在大氣中呈現良好之存放壽命。於一較佳實施方式中,本發明之銅接合線包含銅及不可避免之雜質。
本發明之銅接合線之直徑並無特別限定,可根據具體目的適宜地決定,設為15 μm以上、18 μm以上或20 μm以上等較佳。該直徑之上限並無特別限定,例如可設為300 μm以下、250 μm以下、200 μm以下、150 μm以下、100 μm以下、80 μm以下、60 μm以下或50 μm以下等。因此,於一實施方式中,本發明之銅接合線之直徑為15 μm以上300 μm以下。
<線之製造方法>
對本發明之半導體裝置用銅接合線之製造方法之一例進行說明。
藉由連續鑄造將純度為3 N~6 N(99.9~99.9999質量%)之原料銅加工為大直徑,繼而,藉由拉線加工進行細線化直至最終線徑。
再者,於添加摻雜劑之情形時,使用含有所需濃度之摻雜劑之銅合金作為原料即可。於添加摻雜劑之情形時,可直接添加高純度之摻雜劑成分,亦可利用含有1%左右之摻雜劑成分之母合金。或者,於線製造步驟之中途,可藉由使摻雜劑成分被著於線表面而含有摻雜劑成分。於該情形時,可併入至線製造步驟之任意處,亦可併入至複數個步驟中。作為被著方法,可自(1)水溶液之塗佈乾燥熱處理、(2)鍍覆法(濕式)、(3)蒸鍍法(乾式)中選擇。
拉線加工可使用能安裝複數個經金剛石塗佈之模嘴之連續拉線裝置實施。視需要,可於拉線加工之中途階段實施熱處理。
拉線加工後進行表面改質熱處理。要想實現表面之晶粒界密度處於規定範圍之銅接合線,表面改質熱處理較佳為於高溫下短時間實施。表面改質熱處理之溫度雖亦取決於拉線加工之加工度等,但較佳為將銅之熔點設為Tm(K)時,決定為0.6 Tm~0.8 Tm之範圍。銅之熔點Tm為1358 K(=1085℃),故而表面改質熱處理之溫度較佳為540℃~820℃之範圍。又,表面改質熱處理之時間最長設定為數秒(例如7秒以下、5秒以下、4秒以下等)較佳。
要想實現表面之晶粒界密度處於規定範圍之銅接合線,表面改質熱處理較佳為於導熱率較高之環境氣體之存在下實施。藉此,可縮短使線表面之溫度上升所需要之步驟時間,容易將表面之晶粒界密度調整至規定範圍。一般而言,分子量越小,氣體之導熱率越大,故而作為表面改質熱處理之環境氣體,較佳為含氫之惰性氣體,例如可列舉含氫之氦氣、含氫之氮氣、含氫之氬氣。含氫之惰性氣體中之氫濃度例如可設為1~20%之範圍。於一較佳實施方式中,表面改質熱處理之環境氣體為混合氣體(5%H2
-N2
)。或者,於熱處理時之溫度、時間之嚴密管理下,可使用氮氣、氬氣等惰性氣體作為環境氣體。
本發明之銅接合線由於表面之晶粒界密度處於規定範圍,故而在大氣中之存放壽命優異。又,本發明之銅接合線因線內部之結晶結構而呈現良好之強度。例如,本發明之銅接合線之斷裂強度較佳為145 MPa以上,更佳為150 MPa以上、155 MPa以上或160 MPa以上。該斷裂強度之上限並無特別限定,通常可設為250 MPa以下、200 MPa以下等。銅接合線之斷裂強度可藉由下述[斷裂強度]中所記載之方法測定。
本發明之銅接合線在製造後可藉由將該線纏繞於捲線筒而形成線捲裝體。本發明之銅接合線在大氣中之存放壽命優異,故而於捲繞為長條狀之情形時,亦不易導致氧化劣化之問題,並顯著有助於半導體裝置之生產效率之提高。
本發明之銅接合線可用於在製造半導體裝置時,將半導體晶片上之電極與引線框架或電路基板上之電極連接。與半導體晶片上之電極之第1連接(1st接合)可為球型接合,亦可為楔型接合。於球型接合中,利用電弧加熱將線前端加熱熔融,藉由表面張力形成球(FAB:Free Air Ball)後,將該球部壓接接合於經加熱之半導體元件之電極上。於楔型接合中,不形成球而藉由施加熱、超音波、壓力來將線部壓接接合於電極上。表面之晶粒界密度處於規定範圍之本發明之銅接合線即便不添加摻雜劑或者添加量為極微量,其在大氣中之存放壽命亦優異,故而可抑制由氧化物或摻雜劑所導致之球之硬質化,且可抑制球型接合時之晶片損傷。又,在大氣中之存放壽命優異的本發明之銅接合線在大氣中長期存放後亦可抑制由氧化劣化所導致之連接不良,且可確保較寬之製程窗口。與引線框架或電路基板上之電極之第2連接(2nd接合)可為楔型接合,使用本發明之銅接合線可如上所述確保較寬之製程窗口。
[半導體裝置]
使用本發明之半導體裝置用銅接合線,將半導體晶片上之電極與引線框架或電路基板上之電極連接,藉此可製造半導體裝置。
於一實施方式中,本發明之半導體裝置之特徵在於:其包括電路基板、半導體晶片及使電路基板與半導體晶片導通之銅接合線,該銅接合線為本發明之銅接合線。
於本發明之半導體裝置中,電路基板及半導體晶片並無特別限定,可使用可用於構成半導體裝置之公知之電路基板及半導體晶片。或者,可使用引線框架代替電路基板。例如,如日本專利特開2002-246542號公報中所記載之半導體裝置般,可製成包括引線框架及安裝於該引線框架之半導體晶片之半導體裝置之構成。
作為半導體裝置,可列舉供電氣製品(例如電腦、行動電話、數位相機、電視、空調、太陽能發電系統等)及交通工具(例如摩托車、汽車、電車、船舶及飛行器等)等使用之各種半導體裝置,其中,較佳為電力用半導體裝置(功率半導體裝置)。
[實施例]
以下,示出實施例對本發明進行具體說明。但,本發明並不限定於以下所示之實施例。
(樣品)
首先,對樣品之製作方法進行說明。成為線之原材料之Cu使用純度為99.9質量%(3N)以上~99.999質量%(5N)以上且其餘部分包含不可避免之雜質者。該規定純度之銅以藉由連續鑄造成為數mm之線徑之方式製造。又,於添加摻雜劑Sn、P、Ni之情形時,Sn、P、Ni使用純度為99質量%以上且其餘部分包含不可避免之雜質者,或者Cu中以高濃度調配有摻雜劑之母合金。並且,以摻雜劑含量成為目標值之方式將摻雜劑添加於上述規定純度之銅中,以藉由連續鑄造成為數mm之線徑之方式製造。對所獲得之線材進行拉拔加工,從而製作線徑0.3~1.4 mm之線。拉線使用市售之潤滑液,拉線速度設為20~150 m/分鐘。又,拉線係在為了去除線表面之氧化膜而利用鹽酸等進行酸洗處理後,使用縮面率處於10~26%之範圍之複數個模嘴(其中一半以上之模嘴之縮面率為18%以上)進行拉線加工,加工至最終線徑。視需要,於拉線加工中途,將200~600℃、5~15秒之熱處理進行0~2次。此處,最終線徑為直徑20 μm(實施例1~11、15~17及比較例1~4、7)、30 μm(實施例12~14及比較例5~6)。加工後,實施例1~17之製造中,於540~820℃下進行最長數秒之表面改質熱處理。另一方面,比較例1、4及5之製造中,於500~650℃下進行10秒以上之調質熱處理,又,比較例2、3、6及7之製造中,於350~600℃下進行1~10秒之調質熱處理。熱處理係一面連續對線進行掃掠一面進行,且於混合氣體(5%H2
-N2
)之流通下進行。
(試驗、評價方法)
以下,對試驗、評價方法進行說明。
[表面之晶粒界密度]
以線之表面作為觀察面,藉由EBSD法以如下方式測定晶粒界並算出晶粒界密度。
將供測定之接合線直線狀地固定於試樣架。繼而,以在與線長軸垂直之方向上的線之寬度之中心成為測定面之寬度之中心之方式進行定位,且以測定面之寬度成為線直徑之20%以上40%以下之方式決定測定面。測定面之長度設為測定面之寬度之5倍。並且,使用EBSD測定裝置(牛津儀器股份有限公司製造之Aztec EBSD系統),以加速電壓15 kV、測定點間隔0.06~0.6 μm進行測定,藉由EBSD解析軟體(牛津儀器股份有限公司製造之AZtec HKL)進行解析,將相鄰測定點間之方位差為15°以上之邊界視為晶粒界從而求出晶粒界之總長度(μm)。詳細而言,求出所獲得之柱狀圖中相鄰測定點間之方位差為15°以上之邊界之度數,向該度數乘以測定點間隔從而算出晶粒界之總長度(μm)。用所獲得之晶粒界之總長度(μm)除以測定面積(μm2
),從而算出表面之晶粒界密度(μm/μm2
)。
再者,對於在線長度方向上彼此相隔1 mm以上之3處測定面利用EBSD法實施測定,取其平均值。
[斷裂強度]
線之斷裂強度係使用Instron製造之拉伸試驗機,於標距100 mm、拉伸速度10 mm/分鐘、荷重元之額定荷重5 N之條件下進行拉伸、測定。於本試驗中,將用使線斷裂之荷重除以初始(試驗前)之線截面積而得之值設為斷裂荷重。測定實施5次,取其平均值作為該樣品之斷裂強度。
[2nd接合窗口]
2nd接合窗口試驗如下:線徑為20 μm時如表1所示,在橫軸上將2nd接合時之超音波電流自50 mA至100 mA以10 mA為單位共設置6個階段,在縱軸上將2nd接合時之荷重自40 gf至90 gf以10 gf為單位共設置6個階段;線徑為30 μm時如表2所示,在橫軸上自130 mA至180 mA以10 mA為單位共設置6個階段,在縱軸上自90 gf至140 gf以10 gf為單位共設置6個階段,基於全部36個2nd接合條件求出可接合之條件之數量。
[表1]
(表1) | |||||||
超音波電流(mA) | |||||||
50 | 60 | 70 | 80 | 90 | 100 | ||
荷重(gf) | 40 | ||||||
50 | |||||||
60 | |||||||
70 | |||||||
80 | |||||||
90 |
[表2]
(表2) | |||||||
超音波電流(mA) | |||||||
130 | 140 | 150 | 160 | 170 | 180 | ||
荷重(gf) | 90 | ||||||
100 | |||||||
110 | |||||||
120 | |||||||
130 | |||||||
140 |
本試驗係於下述不同的5個時期對實施例及比較例之各線實施:(i)線之製造當日、線製造後(ii)在大氣中存放1週後、(iii)在大氣中存放2週後、(iv)在大氣中存放3週後、(v)在大氣中存放4週後。詳細而言,使用市售之焊線機,基於各條件分別將200根線接合於引線框架之引線部分。引線框架使用實施了Ag鍍覆之引線框架,於載台溫度200℃、混合氣體(5%H2
-N2
)0.5 l/分鐘之流通下進行接合。並且,求出在沒有未接合或者接合停止之問題之情況下可連續接合之條件之數量,按照以下基準進行評價。
評價基準:
◎:33個條件以上
○:30~32個條件
△:26~29個條件
×:25個條件以下
[線弧形狀穩定性]
線弧形狀穩定性(線弧輪廓之再現性)係以線長成為3 mm、線弧高度成為250 μm之方式連接40根梯形線弧,根據高度之標準偏差進行評價。測定高度時,使用光學顯微鏡,且於線弧之最頂點之附近及線弧之中央部2處位置進行測定。若線弧高度之標準偏差為線徑之1/2以上,則判斷偏差較大,若未達1/2,則判斷偏差較小、線弧形狀穩定性良好。並且,按照表3所示之基準進行評價。
[表3]
(表3) | |||
最頂點 | |||
偏差大 | 偏差小 | ||
中央 | 偏差大 | × | ○ |
偏差小 | ○ | ◎ |
將實施例及比較例之評價結果示於表4。
[表4]
(表4) | ||||||||||||
No. | 線徑 | 銅之純度 | 摻雜劑 | 表面之晶粒界密度 | 斷裂強度 | 2nd接合窗口評價 | 線弧形狀穩定性 | |||||
μm | wt% | wtppm | μm/μm2 | MPa | 製造當日 | 1週後 | 2週後 | 3週後 | 4週後 | |||
實施例 | 1 | 20 | 99.99 | - | 1.01 | 176 | ◎ | ◎ | ◎ | ○ | △ | ◎ |
2 | 20 | 99.99 | - | 0.91 | 167 | ◎ | ◎ | ◎ | ○ | ○ | ◎ | |
3 | 20 | 99.99 | - | 0.60 | 145 | ◎ | ◎ | ◎ | ○ | ○ | ○ | |
4 | 20 | 99.99 | - | 0.62 | 148 | ◎ | ◎ | ◎ | ○ | ○ | ○ | |
5 | 20 | 99.9 | - | 1.29 | 192 | ◎ | ◎ | ◎ | ○ | △ | ◎ | |
6 | 20 | 99.99 | - | 0.94 | 164 | ◎ | ◎ | ◎ | ○ | ○ | ◎ | |
7 | 20 | 99.999 | - | 1.46 | 202 | ○ | ○ | ○ | △ | △ | ◎ | |
8 | 20 | 99.99 | - | 1.59 | 214 | ○ | ○ | ○ | △ | △ | ◎ | |
9 | 20 | 99.9 | - | 1.27 | 189 | ◎ | ◎ | ◎ | ○ | △ | ◎ | |
10 | 20 | 99.999 | - | 0.80 | 158 | ◎ | ◎ | ◎ | ○ | ○ | ○ | |
11 | 20 | 99.99 | - | 0.91 | 164 | ◎ | ◎ | ◎ | ○ | △ | ◎ | |
12 | 30 | 99.99 | - | 0.87 | 161 | ◎ | ◎ | ◎ | ○ | ○ | ○ | |
13 | 30 | 99.999 | - | 1.31 | 195 | ◎ | ◎ | ◎ | ○ | △ | ◎ | |
14 | 30 | 99.99 | - | 1.48 | 205 | ○ | ○ | ○ | △ | △ | ◎ | |
15 | 20 | 99.99 | Sn 20 | 1.11 | 180 | ◎ | ◎ | ◎ | ○ | △ | ◎ | |
16 | 20 | 99.99 | P 30 | 0.97 | 176 | ◎ | ◎ | ◎ | ○ | △ | ◎ | |
17 | 20 | 99.9 | Ni 120 | 1.22 | 192 | ◎ | ◎ | ◎ | ○ | △ | ◎ | |
比較例 | 1 | 20 | 99.99 | - | 0.41 | 139 | ◎ | ◎ | ◎ | ○ | ○ | × |
2 | 20 | 99.99 | - | 1.69 | 227 | ○ | ○ | △ | × | × | ◎ | |
3 | 20 | 99.99 | - | 2.10 | 243 | × | × | × | × | × | ◎ | |
4 | 20 | 99.9 | - | 0.33 | 126 | ◎ | ◎ | ◎ | ○ | ○ | × | |
5 | 30 | 99.99 | - | 0.53 | 132 | ◎ | ◎ | ◎ | ○ | ○ | × | |
6 | 30 | 99.999 | - | 2.10 | 236 | × | × | × | × | × | ◎ | |
7 | 20 | 99.99 | Ag 15 | 1.81 | 227 | ○ | ○ | △ | × | × | ◎ |
實施例No.1~17中均可確認,線表面之晶粒界密度處於本發明範圍內,在大氣中存放後亦可抑制由氧化劣化所導致之連接不良,且可確保較寬之製程窗口。進而,實施例No.1~17中均可確認,線弧輪廓之再現性優異,呈現良好之線弧形狀穩定性。再者,線之表面經SEM(scanning electron microscope,掃描式電子顯微鏡)觀察(倍率為10,000倍;二次電子圖像)時,實施例No.1~6、9~13、15~17中並未觀察到表面缺陷,又,實施例No.7、8及14中觀察到若干表面缺陷。再者,所謂表面缺陷係電子顯微鏡可觀察到之微小缺陷,而非光學顯微鏡可見之劃痕、刮痕。一般認為表面缺陷主要是在拉線時因與模嘴接觸而形成。
另一方面,比較例No.1~7中可確認,線表面之晶粒界密度在本發明範圍外,因氧化劣化而產生連接不良,結果導致製程窗口狹窄,且線弧形狀穩定性較差。再者,線之表面經SEM觀察(倍率為10,000倍;二次電子圖像)時,比較例No.1、4、5中並未觀察到表面缺陷,比較例No.2、7中觀察到若干表面缺陷,比較例No.3、6中觀察到較多表面缺陷。
又,可確認,若線之表面之晶粒界密度處於本發明範圍內,則線徑為100 μm、200 μm等之線亦顯示出與上述實施例相同之行為。
Claims (7)
- 一種半導體裝置用銅接合線,其表面之晶粒界密度為0.6(μm/μm2 )以上1.6(μm/μm2 )以下。
- 如請求項1之銅接合線,其表面之晶粒界密度係以如下方式算出:藉由EBSD法於測定點間隔為0.06 μm以上0.6 μm以下之條件下進行測定,於將相鄰測定點間之方位差為15°以上之邊界視為晶粒界之情形時,用晶粒界之總長度(μm)除以測定面積(μm2 )。
- 如請求項2之銅接合線,其表面之晶粒界密度以如下條件測定:以在與線長軸垂直之方向上的線之寬度之中心成為測定面之寬度之中心之方式進行定位,且測定面之寬度成為線直徑之20%以上40%以下,測定面之長度成為測定面之寬度之5倍。
- 如請求項1之銅接合線,其包含純度為99.9質量%以上之銅。
- 如請求項1之銅接合線,其線直徑為15 μm以上300 μm以下。
- 如請求項1之銅接合線,其斷裂強度為145 MPa以上。
- 一種半導體裝置,其包含如請求項1至6中任一項之銅接合線。
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JP5053456B1 (ja) * | 2011-12-28 | 2012-10-17 | 田中電子工業株式会社 | 半導体装置接続用高純度銅細線 |
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EP4071256A1 (en) | 2022-10-12 |
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