TW202119574A - 基於勁度變化而可選擇地固持及釋放物體的轉移元件 - Google Patents

基於勁度變化而可選擇地固持及釋放物體的轉移元件 Download PDF

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TW202119574A
TW202119574A TW109137391A TW109137391A TW202119574A TW 202119574 A TW202119574 A TW 202119574A TW 109137391 A TW109137391 A TW 109137391A TW 109137391 A TW109137391 A TW 109137391A TW 202119574 A TW202119574 A TW 202119574A
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Taiwan
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transfer
substrate
objects
temperature
modulus
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TW109137391A
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王蘊達
呂正平
謙 王
諾琳Ｅ 張
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美商帕洛阿爾托研究中心公司
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Publication of TW202119574A publication Critical patent/TW202119574A/zh

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Abstract

轉移元件包括一黏著元件，該黏著元件在一較低溫度下具有較高的楊氏模數，且在一較高溫度下具有較低的楊氏模數。加熱元件可操作以回應於一輸入而改變各黏著元件之一操作溫度。一控制器經耦合以提供該等輸入至該等加熱元件，以導致至少在該較高溫度與該較低溫度之間的溫度變化。該溫度變化回應於在轉移元件之該較高楊氏模數與該較低楊氏模數之間的變化而致使該等轉移元件可選擇地將物體固持及將該等物體釋放。

Description

基於勁度變化而可選擇地固持及釋放物體的轉移元件
本揭露係關於可選擇的表面黏著元件，其具有可選擇之剛性至柔性的急劇轉變。
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本揭露係關於可選擇的表面黏著元件，其具有可選擇之剛性至柔性的急劇轉變。在一實施例中，一種設備包括一轉移基材，該轉移基材具有二或更多個轉移元件。該等轉移元件之各者包括一黏著元件，該黏著元件在一較低溫度下具有較高的楊氏模數，且在一較高溫度下具有較低的楊氏模數。該設備包括一加熱元件，該加熱元件可操作以回應於一輸入而改變該黏著元件之一操作溫度。一控制器經耦合以提供輸入至該二或更多個轉移元件之加熱元件，以導致至少在該較高溫度與該較低溫度之間的溫度變化。該溫度變化回應於在轉移元件之較高楊氏模數與較低楊氏模數之間的變化而致使該等轉移元件可選擇地將物體固持至該轉移基材及將該等物體從該轉移基材釋放。
在另一實施例中，一種方法涉及將第一輸入施加至在一轉移基材上的複數個轉移元件。該複數個轉移元件之各者在一較低溫度下具有較高的楊氏模數，且在一較高溫度下具有較低的楊氏模數。該等第一輸入導致轉移元件之子集處於該較高溫度或高於該較高溫度。使該等轉移元件在該較高溫度或高於該較高溫度下接觸在一施體基材上的各別複數個物體。將該等轉移元件在接觸該複數個物體時冷卻至處於該較低溫度或低於該較低溫度。將該轉移基材移動遠離該施體基材，物體之子集黏附至轉移元件之該子集，並隨著該轉移基材移動。使在該轉移基材上的該等物體接觸一目標基材，並將物體之該子集從該轉移基材轉移至該目標基材。
在另一實施例中，一種系統包括一施體基材，該施體基材具有設置在一固持層上之複數個物體，該固持層包含聚二甲基矽氧烷及矽氧凝膠之一或多者。一種轉移基材具有二或更多個轉移元件。該等轉移元件之各者包括一黏著元件，該黏著元件在一較低溫度下具有較高的楊氏模數，且在一較高溫度下具有較低的楊氏模數。各轉移元件具有一加熱元件，該加熱元件可操作以回應於一輸入而改變該黏著元件之一操作溫度。一控制器經耦合以選擇性地提供該等輸入至該二或更多個轉移元件之該等加熱元件，以致使該等轉移元件之一子集回應於至少在該較高溫度與該較低溫度之間的變化而可選擇地將該等物體從該施體基材升起。該系統包括一或多個致動器，其經組態以移動該施體基材及轉移基材中之一或兩者，以促使將該等物體從該施體基材升起。
可鑑於下列詳細論述及附圖瞭解各種實施例的此等及其他特徵及態樣。
本揭露係關於物體的操縱與組裝，且在一些實施例中係關於經由一轉移基材之微物體的大量組裝。一些電子裝置係藉由將小型物體機械地疊置在彼此頂部上來製造。雖然有時使用晶圓形成技術（諸如層沉積、遮罩、及蝕刻）來製造微電子組件及微光學組件，但是某些類別的材料並不是彼此成長相容的。在此類情況下，該組裝可涉及在一第一基材上形成一類裝置且一第二基材上形成一第二類裝置，並接著（例如）經由覆晶或轉移印刷技術來機械地接合該等裝置。
在本文中所述之態樣係關於一種系統，其能夠將大量微物體（例如，粒子，小晶片(chiplet)，迷你/微LED晶粒）從一施體基材平行轉移至另一基材，同時維持個別微物體之高位置對齊。此系統允許從一轉移基材選擇性地轉移微物體並將該等微物體選擇性地放置至目的地或目標基材。此系統可用於組裝諸如微發光二極體(microLED)顯示器的裝置。
通常，microLED顯示器係以形成個別轉移元件之微觀LED的陣列製成。相較於習知LCD系統，OLED顯示器與microLED顯示器兩者均提供大幅減少的能量需求。不同於OLED，microLED係基於習知的GaN LED技術，其提供比OLED所產生者更高的總亮度，以及提供就每單位電力所發射的光而言更高的效率。其亦不會苦於OLED的較短壽命。
利用microLED的單一4K電視具有約2千5百萬個小型LED子像素，其接著需要組裝。小晶片之大量轉移係可用於microLED製造的一種技術。以高產率將microLED快速地且準確地轉移至一目標底板將是製造商為了使microLED成為一可行的大眾市場產品所需要完善的技術之一。下文所述之技術可用於microLED製造、以及其他組裝程序，其中大量（典型）小型物體需要同時移動，且其中可能需要選擇性地將此類裝置之一子集移動至轉移介質及/或自轉移介質移動。此類微物體可包括但不限於墨水、預沉積金屬膜、矽晶片、積體電路晶片、珠粒、microLED晶粒、微機電系統(micro-electro-mechanical system, MEMS)結構、及任何其他預製造微結構。
能夠依任意型態選擇性地轉移小晶片可用以促進用於microLED顯示器製造之有效轉移程序、像素修復、孔/空位再填充，其將導致高程序產率。已將一彈性體印模(stamp)用以針對此類型的應用決定性地轉移微尺度LED晶片。然而，彈性體印模具有固定型態且無法轉移任意型態的小晶片。不可避免地，小晶片之一些子集將是有瑕疵的，而因此變得難以使用此一印模來置換選定的少數小晶片。
在圖1及圖2中，方塊圖顯示根據一實例實施例之可使用裝置、系統、及方法來實現的一組裝程序之一實例。在圖1中，施體晶圓/施體基材100係顯示其包括一小晶片陣列101，其可已係成長或放置在基材100上。在陣列101中的陰影小晶片已係識別為有缺陷的，且當將小晶片轉移至目標基材102時，僅轉移小晶片陣列之子集101a，即無陰影的良好小晶片。此可藉由如圖2所示之轉移基材200來達成，該轉移基材在子集101a一被辨識出時，選擇性地僅將該子集從施體基材100拾取。如圖2所示，轉移基材202隨後拾取小晶片之第二集合200（例如，從一不同的施體基材）。在集合200內之小晶片的位置對應於第一施體基材100上之有缺陷的小晶片之位置。轉移基材202將此集合200移動至目標基材102，導致經定位在目標基材102上的操作性小晶片之一完整集合201。
本揭露係關於（除了其他者以外）一種具有轉移元件（例如，轉移像素）之一集合的一轉移基材，其可選擇性地固持微物體之一子集。因此，即使當所有轉移元件係與大於該子集合的微物體陣列接觸時，僅該子集將被黏附並轉移，且該子集之外的物體將被留下或以其他方式而不受影響。類似地，轉移基材可能夠選擇性地釋放目前係附接至該基材的微物體之一子集，使得僅將該子集轉移至一目標，即使所有轉移元件目前正固持一微物體。此程序係可重複且可逆的，使得不需要永久性接合以影響該等物體的選擇性固持或釋放。
在圖3中，側視圖繪示根據一實例實施例之一設備300的細節。該設備包括一轉移基材302，該轉移基材具有二或更多個轉移元件304。可以選擇性地使轉移元件304改變勁度，其可表示為製成該等元件之材料的楊氏模數。楊氏模數係一材料在線性彈性區間內之應力（每單位面積上之力）除以應變（比例變形）的一種量度。一般而言，具有較高楊氏模數（在應力σ下，應變較小）的材料比具有較低楊氏模數（在相同應力σ下，應變較大）的材料更具勁度。亦可使用其他量度來表示材料之勁度，諸如儲存模數，其亦說明材料之動態性能。可使用一些量度來表示一部件之勁度，諸如彈簧常數，其在界定部件之性能時可係功能上等效的。然而，勁度係受到定義的，轉移元件304回應於可在如下文所述之裝置轉移中使用的溫度而具有勁度變化。
轉移元件304之各者包括一黏著元件306，該黏著元件在一較低溫度下具有較高的楊氏模數（＞ 6 MPa），在一較高溫度下具有較低的楊氏模數（＜ 1 MPa）。轉移元件304之各者亦包括一熱元件308，該熱元件可操作以回應於一輸入（例如，經由輸入310）而改變黏著元件306之一溫度。一控制器312經耦合以提供輸入310至熱元件308，藉此致使轉移元件304之一子集可選擇地將物體314拾取並固持至轉移基材302及（可選地）將物體314從該轉移基材釋放。具體而言，物體314將不會在該較低溫度下黏貼至轉移元件304，但將在該較高溫度下黏貼至該等轉移元件。為了增加黏著性的可靠性，在嘗試將物體314拉離轉移基材302之前，可將該等轉移元件冷卻。
設備300可係微轉移系統之部分，該微轉移系統係用以將微物體（例如，1 µm至1 mm）從轉移基材302轉移至目標基材316的一系統。黏著元件306可由含有丙烯酸硬脂酯(stearyl acrylate, SA)為基的多聚合物所形成。在這一類情況下，該較高溫度與該較低溫度之間的差可小於20℃（或在其他情況下低於50℃），以調整黏著元件306之膠黏性，使得有明顯的表面黏著性與楊氏模數的差異，例如從在該較高溫度下係＜ 1 MPa轉變至在該較高溫度下係＞ 6 MPa。在諸如一系統中之控制器312可耦合至引起基材之間相對運動的致動器，以促進如本文所述之物體轉移。
熱元件308可包括一加熱元件及一冷卻元件中之一者或兩者。輸入310可包括電信號及/或雷射光。輸入310可經組態（例如，使用矩陣電路）使得存在比轉移元件304之總數量更少的線行進至控制器312。轉移元件304可進一步包括在黏著元件306與轉移基材302之間的熱絕緣體309。絕緣體309幫助防止熱轉移至基材302，藉此減少影響黏著元件306處之溫度改變及減少回應時間所需的能量之量。
一般而言，轉移元件304形成一中間轉移表面，其柔度(compliance)可係隨溫度而變動地調變（例如，具有剛性至柔性的急劇轉變）。此一表面可用以依受控且可選擇的方式來拾取及釋放微物體之群組。各轉移元件304可具有從數微米至數百微米之橫向尺寸W。各轉移元件304可具有從小於一微米至數百微米之總厚度T。轉移陣列之節距可從數微米變化至數毫米。在一些實施例中，熱元件308及絕緣層309係彼此非實體隔離的連續層。如此，轉移元件「像素」係其中可個別地定址及控制的加熱/冷卻元件的區域（參見圖6）。基材302材料可包括但不限於玻璃、石英、矽、聚合物、及碳化矽(SiC)。基材302可具有從數十微米至數毫米之厚度範圍及從數毫米至一公尺之橫向尺寸。
注意到，雖然所繪示的實施例顯示二或更多個轉移元件304，但是在一些情況中可使用單一轉移元件。例如，單一轉移元件304可係放置在機械手臂之端部處的一操縱器之部分。在此一組態中，可使用單一轉移元件304以拾取物體而不需要使用鉗子、真空、磁力等。在其他組態中，一或多個轉移元件可放置在鉗子或其他固持附加物之端部處，以協助握持而不需在所固持的該物體上施加不當的壓力。如同其他實施例，在固持及釋放操作期間，熱元件可增加改變黏著性（對應於楊氏模數之變化）。
已研究出包含丙烯酸硬脂酯(SA)之相變聚合物作為雙穩態電活性聚合物(bistable electroactive polymer, BSEP)，以用於黏著元件。BSEP聚合物係低於其玻璃轉移溫度(Tg)的剛性聚合物。高於Tg，則其變成展現大的斷裂伸長率及高介電場強度的彈性體。電力制動可在高於Tg以作用為介電質彈性體的似橡膠BSEP實行。當將該聚合物冷卻至低於Tg時，則變形被鎖定。當該聚合物經再加熱至高於Tg時，可逆轉形狀變化。
已經研究丙烯酸硬脂酯（丙烯酸十八酯，SA）為基的聚合物為形狀記憶聚合物，由於其等在硬脂基部分(stearyl moiety)的結晶狀態與熔化狀態之間的急劇相變。硬脂基部分之結晶聚集體的突然且可逆的相變導致在溫度循環期間聚合物的剛性狀態與似橡膠狀態之間的快速轉換。SA的轉變一般低於50℃，其具有小於20℃之一狹窄的相變溫度範圍。因此，SA係用於賦予剛性至橡膠狀的急劇轉變之理想組分。已進行一些初步實驗來驗證此特性。
黏著元件306可由材料製成，該等材料包括但不限於丙烯酸硬脂酯（丙烯酸十八酯，SA）為基的聚合物、丙烯酸硬脂酯與胺甲酸酯二丙烯酸酯共聚物或其他類型的聚合物。具體而言，已發現含有胺甲酸酯二丙烯酸酯及SA之共聚物具有針對此等目的之所欲特性。黏著元件306較佳地具有剛性至柔性的急劇轉變，因此黏著性可輕易地隨溫度改變而調變。熱元件308可係熱電加熱/冷卻元件、電阻加熱器、二極體加熱器、感應加熱元件、光學加熱元件等。熱元件308可包括薄膜電阻器、二極體結構、及/或高光能吸收效率材料，諸如碳黑、碳奈米管、工程奈米粒子等。熱絕緣體309可由諸如聚醯亞胺、PDMS、聚對二甲苯、玻璃、氧化矽、Alx Oy 與SxNy、及其組合的材料來製成。
在一實施例中，轉移基材302含有主動電子組件陣列，且熱元件308可在網格中與其等互連。此係示意性地顯示於圖4及圖5中。加熱元件（在這些實例中係電阻器）之2D陣列可藉由如圖4所示之二極體或如圖5所示之電晶體來控制。在圖4所示之實施例中，加熱元件R1至R9係藉由二極體D1至D9之矩陣來控制。此可稱為被動切換矩陣，其減少將加熱元件連接至控制器晶片所需的電線數目。
在此情況中，加熱元件係依逐列(row-by-row)的方式來定址。例如，R1可係偏壓至0V，而R2及R3係偏壓至5V。C1、C2及C3偏壓電壓將判定加熱元件R1、R2或R3係接通（行係偏壓至5V）或斷開（行線係偏壓至0V）。由於二極體阻斷電流流動，故所有其他加熱器均斷開。針對所有剩餘列重複該程序，針對選定列係偏壓至0V且所有其他列均係偏壓至5V。熱元件的熱時間常數將設計成比2D掃描之「框率(frame rate)」更長，以確保準恆溫係針對各可定址轉移來維持。
圖5中之示意圖顯示另一電路，其中熱元件係藉由電晶體（例如，薄膜電晶體、或TFT）而非二極體來控制，其可稱為「主動矩陣切換」。各熱元件有至少一端係連接至TFT中之一者的一汲極或一源極。使用電晶體的優點在於可達到較大的電壓範圍及較佳的隔離。在此情況中，所有未經選擇的列將係偏壓至例如-5V，以斷開電晶體。當一列經選擇時，列線係偏壓至例如20V，以接通電晶體。將該行線偏壓至特定電壓使該選定列之對應加熱元件能夠加熱至所欲溫度。類似於圖4中之實施例，將針對剩餘的其他列來重複該程序。
在圖6中，側視圖顯示根據另一實例實施例之一轉移基材602。如圖3中之實施例，轉移基材602具有二或更多個轉移元件604，該等轉移元件各包括一黏著元件606，該黏著元件具有隨溫度而變化的表面黏著性。轉移元件604之各者亦包括一熱元件608，該熱元件可操作以回應於一輸入而改變局部黏著元件606（例如，接近熱元件608的元件之部分）的溫度。在此實例中，黏著元件604係覆蓋超過一個轉移元件604（在此情況中，所有繪示的元件604）的連續層之部分。在本文中所述之任何實施例可使用由單層所形成的一黏著元件，該單層覆蓋類似於圖6中所示者之複數個元件。
亦值得注意的是此實施例顯示在轉移元件604與基材602之間使用絕緣體609，雖然此類絕緣體609可係可選的。此外，如虛線所指示，熱元件608與絕緣體609中之一者或兩者可實施為覆蓋多於一轉移元件604之單層。在此一實施例中，個別信號線（例如，圖3中之線310及/或圖7中之波導1112）可係附接至熱元件層608，使得局部溫度改變係在界定個別轉移元件608之大小及位置的一區域內引起。
在圖7中，側視圖顯示根據另一實例實施例之一轉移基材702。如圖3中之實施例，轉移基材702具有二或更多個轉移元件704，該等轉移元件各包括一黏著元件706，該黏著元件具有隨溫度而變化的表面黏著性。轉移元件704之各者亦包括一熱元件708，該熱元件可操作以回應於一輸入而改變黏著元件706之一溫度。在此實例中，熱元件708係由雷射光710啟動，該雷射光係經由波導712而在基材702中傳遞。該光係從一或多個雷射716提供，且可經由光學切換元件714以選擇性地啟動轉移元件704，該等光學切換元件將光吸收或重導向遠離不被加熱的轉移元件。注意到可使用多個雷射716（每一轉移元件便有一個地多），該等雷射可整合在基材702中或安裝於外部。光學開關714可係電啟動的，且可按類似於圖4及圖5所示之二極體及電晶體的一矩陣來配置，以減少至控制器之線的數目。
在圖8中，側視圖顯示根據另一實例實施例之一轉移基材802。如圖3中之實施例，轉移基材802具有二或更多個轉移元件804，該等轉移元件各包括一黏著元件806，該黏著元件具有隨溫度而變化的表面黏著性。轉移元件804之各者亦包括一熱元件808，該熱元件可操作以回應於一輸入而改變黏著元件806之一溫度。轉移元件804之各者亦包括絕緣體809，該絕緣體使熱元件808與轉移基材802熱絕緣。
在此實施例中，轉移基材802係彎曲的且安裝至滾筒813，該滾筒相對於目標基材816旋轉。滾筒813及目標基材亦相對於彼此而線性移動（在此圖示中係水平地移動），使得每次只有轉移元件804之一子集（例如，單一元件804）接觸轉移基材816。轉移元件804之該子集經選擇性地啟動以固持或釋放一物體814，使得物體814之一些者係選擇性地轉移至目標基材816。應注意到，左邊的陰影物體814並未轉移至目標基材816。應注意到，滾筒813及基材802之另一部分可與施體基材（未圖示）接觸，使得物體之轉移可係一滾動轉移程序，其中物體814係從施體拾取並轉移至目標816。
滾筒813及基材802可在相同時間或不同時間下與施體基材及目標基材接觸。在此一情況中，一第二轉移基材（未圖示）可用以沉積所捨棄的物體814，且此第二轉移基材亦可使用一彎曲基材。在本文中所述之任何其他實施例可使用如圖8所示之一彎曲轉移基材及滾動轉移程序。如箭頭820、821所指示，轉移可藉由旋轉致動器820及線性致動器821來促進，該旋轉致動器使滾筒813旋轉，該線性致動器引起在滾筒813與基材802之間的相對線性運動。
在圖9A及圖9B中，一方塊圖顯示根據一實例實施例之一方法。在方塊900中，顯示一轉移基材902，其具有轉移元件904至907之一陣列。轉移基材902係顯示為定位在一施體基材908上方，使得轉移元件904至907之該陣列對準在各別物體909至912上方。如陰影所指示，物體909、911形成意欲從施體基材908轉移離開的物體909至912之一子集。轉移基材902移動朝向施體基材908，或反之亦然。此移動可經由一或多個機械致動器901、903來完成，該等機械致動器引起在基材902與基材908之間的相對運動。
如在方塊916中所見，當在轉移元件904至907與物體909至912之間進行接觸時，電輸入便已被施加至轉移元件904、906之一子集，如元件904、906的陰影所指示。該等輸入導致在該子集中的各轉移元件904、906處於或高於一高溫（例如，介於30℃與65℃之間），使得在該子集中的各轉移元件904、906之一黏著元件達成一較低的楊氏模數（例如，＜ 1 MPa）。此輸入可在轉移元件904、906之該子集接觸物體909、911之各別子集之前或之後施加。物體909、911之該子集被吸引至（例如，因為凡得瓦力在該較低的楊氏模數下增加）在對應於較高溫度範圍之該較低楊氏模數下的轉移元件904、906之該子集。在此操作期間，致動器902、903可經組態以施加壓力。
應注意到，不位於轉移元件904、906之該子集中的其他轉移元件905、907可處於或低於一較低溫度（例如，介於0℃與30℃之間），該較低溫度導致轉移元件905、907具有一較高的楊氏模數（例如＞ 6 MPa，及在一些情況下係＞ 10 MPa）。在此第二楊氏模數下，例如由於低凡得瓦力的緣故，其他轉移元件905、907將不會被吸引至各別物體910、912。注意到在方塊900中所示之先前步驟中，轉移元件904至907可處於任何溫度。
如在方塊918中所見，轉移元件904、906之該子集已設定成處於或低於該較低溫度，但仍同時與將被轉移離開基材908的物體909、911之子集保持良好接觸。已發現到，此可增加轉移元件904、906與物體909、911之間的吸引力。此吸引力可藉由加入突起部至物體909、911而進一步增強，該等突起部從物體909、911面向轉移元件904的一表面延伸。
如在方塊919中所見，轉移基材902係藉由致動器901、903之一或多者來移動遠離施體基材，使物體909、911之該子集從施體基材908分離，而其他物體910、912仍留在施體基材上。如在圖9B中之方塊920中所見，轉移基材902係藉由致動器921、923來對準並移動朝向目標基材922，該等致動器可與圖9A中之致動器901、903相同或不同。如在方塊924中所見，轉移基材902上的物體909、911之該子集接觸目標基材922。
可選地，在方塊924、926中之一或兩者中，可施加第二輸入至轉移元件904、906之該子集，導致在該子集中的各轉移元件達到或超過該較高溫度。在物體909、911之該子集與目標基材922之間可能有固有的或主動產生的吸引，使得物體909、911可在該較高溫度或該較低溫度下釋放。例如，可從目標基材922施加反作用力，該反作用力包括但不限於黏著力、電力、磁力、及由真空產生的力。
如上所述，所轉移物體可包括增加在從施體基材移除時的黏著性之特徵。在圖10中，圖顯示根據實例實施例之物體1000至1002的特徵。物體1000至1002係顯示在各別基材1004至1006上。物體1000至1002之各者各具有一或多個各別突起部1000a至1002a，該等突起部延伸於平坦表面1000b至1002b上方。如所示，該等突起部可包括柱體、角錐體、梯形體，且可包括任何其他類型的突起結構，諸如鉤、環、凸塊等。突起部1000a至1002a之最高點可介於在平坦表面1000b至1002b上方1 µm與20 µm之間。突起部1000a至1002a可由與物體1000至1002之材料相同或不同之材料製成，諸如矽、GaN、SiO2、SiN、金屬、SU8、聚醯亞胺或其他聚合物。
基材1004至1006可係具有固持層1004a至1006a之施體基材，該等固持層經組態以暫時固持物體1000至1002。臨時性的固持層1004a至1006a可包括一彈性體材料，諸如聚二甲基矽氧烷(PDMS)、矽氧凝膠等，且可具有＜ 2 MPa之楊氏模數。層1004a至1006a之厚度可在1 µm至100 µm的範圍。
除非另有指明，否則說明書及申請專利範圍中用以表達特徵之尺寸、數量以及物理特性的所有數字，皆應理解為在所有情況下以「約（about）」一詞修飾之。因此，除非另有相反指示，否則在前述說明書以及隨附申請專利範圍中所提出的數值參數取決於所屬技術領域中具有通常知識者運用本文所揭示之教示所獲得的所欲特性而有所不同。藉由端點使用數值範圍包括在該範圍內的所有數字（例如1至5包括1、1.5、2、2.75、3、3.80、4、及5）以及該範圍內的任何範圍。
上述各種實施例可使用互動以提供具體結果之電路系統、韌體及/或軟體模組來實施。所屬技術領域中具有通常知識者可輕易地使用所屬技術領域中通常已知的知識來實施此類所描述的功能，無論以模組等級或整體。例如，在本文中所繪示之流程圖及控制圖可用以產生用於由一處理器執行的電腦可讀取指令/碼。此類指令可儲存在非暫時性電腦可讀取媒體上，並轉移至處理器以用於執行，如所屬技術領域中已知者。以上所示之結構及程序僅係可用以提供在上文中所描述之功能的實施例之一代表性實例。
為了說明及描述的目的，已經提供了實例實施例的前述說明。其並非旨在窮舉或限制實施例為所揭示的精確形式。鑑於上述教示，許多修改及變型係可行的。所揭示實施例之任何或所有特徵可個別或以任何組合施加，並非意欲係限制性的，而純係例示性的。旨在使本發明之範圍並非以此實施方式限制，而是由隨附申請專利範圍所判定。
100:施體晶圓/施體基材/基材 101:陣列 101a:子集 102:目標基材 200:轉移基材/集合 201:集合 202:轉移基材 300:設備 302:轉移基材/基材 304:轉移元件 306:黏著元件 308:熱元件 309:熱絕緣體/絕緣層 310:輸入/線 312:控制器 314:物體 316:目標基材 602:轉移基材/基材 604:轉移元件/黏著元件/元件 606:黏著元件 608:熱元件/熱元件層/轉移元件 609:絕緣體 702:轉移基材/基材 704:轉移元件 706:黏著元件 708:熱元件 710:雷射光 712:波導 714:光學切換元件/光學開關 802:轉移基材/基材 804:轉移元件/元件 806:黏著元件 808:熱元件 809:絕緣體 813:滾筒 814:物體 816:目標基材/轉移基材/基材/目標 820:箭頭/旋轉致動器 821:箭頭/線性致動器 900:方塊 901:機械致動器/致動器 902:轉移基材/基材/致動器 903:機械致動器/致動器 904:轉移元件/元件 905:轉移元件 906:轉移元件/元件 907:轉移元件 908:施體基材/基材 909:物體 910:物體 911:物體 912:物體 916:方塊 918:方塊 919:方塊 920:方塊 921:致動器 922:目標基材 923:致動器 924:方塊 926:方塊 1000-1002:物體 1000a-1002a:突起部 1000b-1002b:平坦表面 1004-1006:基材 1004a-1006a:固持層/層 1112:波導 D1-D9:二極體 R1-R9:加熱元件
下文參照下列圖式進行論述，其中可使用相同的元件符號以識別多個圖中的相似/相同組件。圖式非必然按比例繪製。 〔圖1〕及〔圖2〕係顯示根據一實例實施例之組裝程序的方塊圖； 〔圖3〕係根據一實例實施例之一設備的側視圖； 〔圖4〕及〔圖5〕係根據實例實施例之用於一轉移基材之切換矩陣的示意圖； 〔圖6〕係根據一實例實施例之一轉移基材的側視圖； 〔圖7〕及〔圖8〕係根據各種實例實施例之轉移基材的側視圖； 〔圖9A〕及〔圖9B〕係根據一實例實施例之一方法的圖；及 〔圖10〕係根據實例實施例之顯示在可轉移物體上之突起部的圖。
100:施體晶圓/施體基材/基材
101:陣列
101a:子集
102:目標基材

Claims (22)

  1. 一種設備，其包含： 一轉移基材，其包含二或更多個轉移元件，該等轉移元件之各者包含： 一黏著元件，其在一較低溫度下具有較高的楊氏模數，且在一較高溫度下具有較低的楊氏模數； 一加熱元件，其可操作以回應於一輸入而改變該黏著元件之一操作溫度；及 一控制器，其經耦合以提供該等輸入至該二或更多個轉移元件之該等加熱元件，以導致至少在該較高溫度與該較低溫度之間的溫度變化，該溫度變化致使該等轉移元件回應於在轉移元件之該較高楊氏模數與該較低楊氏模數之間的變化而可選擇地將物體固持至該轉移基材及將該等物體從該轉移基材釋放。
  2. 如請求項1之設備，其中該楊氏模數在該較低溫度下係＞ 6 MPa，在該較高溫度下係＜ 1 MPa，且其中該較低溫度與該較高溫度之間的該差小於50℃。
  3. 如請求項1之設備，其中該基材包含玻璃及碳化矽之一或多者。
  4. 如請求項1之設備，其中該等物體包含次毫米電子裝置。
  5. 如請求項1之設備，其中該黏著元件係由含有胺甲酸酯二丙烯酸酯、丙烯酸硬脂酯、聚(降莰烯)、聚(胺甲酸酯)、及聚(苯乙烯-丁二烯)中之至少一者的共聚物所形成。
  6. 如請求項1之設備，其中該加熱元件包含一電阻加熱元件。
  7. 如請求項1之設備，其進一步包含複數個主動電子組件，該複數個主動電子組件耦合至該控制器且經組態以獨立地啟動該等加熱元件之各別者。
  8. 如請求項7之設備，其中該等主動電子組件包含二極體，各加熱元件有至少一端係連接至該等二極體中之一者。
  9. 如請求項7之設備，其中該等主動電子組件包含薄膜電晶體，各加熱元件有至少一端係連接至該等薄膜電晶體中之一者的一汲極或一源極。
  10. 如請求項1之設備，其中該等物體包含具有面向該轉移基材之一平坦表面的GaN微發光二極體(LED)晶片。
  11. 如請求項10之設備，其中該等GaN微LED晶片包含一或多個突起部，該等突起部延伸於該平坦表面上方。
  12. 如請求項11之設備，其中該等突起部之一最高點介於在該平坦表面上方1um與20um之間。
  13. 如請求項11之設備，其中該等突起部係由矽、GaN、SiO2、SiN、金屬、SU8、聚醯亞胺或其他聚合物中之至少一者製成。
  14. 一種方法，其包含： 將第一輸入施加至在一轉移基材上的複數個轉移元件，該複數個轉移元件之各者在一較低溫度下具有較高的楊氏模數，且在一較高溫度下具有較低的楊氏模數，該等第一輸入導致轉移元件之該子集處於該較高溫度或高於該較高溫度； 使該等轉移元件在該較高溫度或高於該較高溫度下接觸在一施體基材上的各別複數個物體； 將該等轉移元件在接觸該複數個物體時冷卻至處於該較低溫度或低於該較低溫度； 將該轉移基材移動遠離該施體基材，使物體之該子集黏附至轉移元件之該子集，並隨著該轉移基材移動； 使在該轉移基材上的該等物體接觸一目標基材；及 將物體之該子集從該轉移基材轉移至該目標基材。
  15. 如請求項14之方法，其中使該等轉移元件接觸該等物體包含：在第二複數個轉移元件低於該較高溫度時，致使在該轉移基材上的該第二複數個轉移元件接觸在該施體基材上的第二複數個物體，使得該第二複數個物體不黏附至該轉移基材，且不隨著該轉移基材移動。
  16. 如請求項14之方法，其中該較高溫度介於30℃與65℃之間。
  17. 如請求項14之方法，其中該較低溫度介於0℃與30℃之間。
  18. 如請求項14之方法，其中該等物體包含具有面向該轉移基材之一平坦表面的GaN微發光二極體(LED)晶片。
  19. 如請求項18之方法，其中該等GaN微LED晶片包含一或多個突起部，該等突起部延伸於該平坦表面上方，且其中該等突起部的一最高點介於在該平坦表面上方1um與20um之間。
  20. 如請求項19之方法，其中該等突起部係以矽、GaN、SiO2、SiN、金屬、SU8、聚醯亞胺或其他聚合物中之至少一者製成。
  21. 一種系統，其包含： 一施體基材，其包含設置在一固持層上之複數個物體，該固持層包含具有＜ 2 MPa之楊氏模數的一或多種材料。 一轉移基材，其包含二或更多個轉移元件，該等轉移元件之各者包含： 一黏著元件，其在一較低溫度下具有較高的楊氏模數，且在一較高溫度下具有較低的楊氏模數；及 一加熱元件，其可操作以回應於一輸入而改變該黏著元件之一操作溫度； 一控制器，其經耦合以選擇性地提供該等輸入至該二或更多個轉移元件之該等加熱元件，以致使該等轉移元件之一子集回應於至少在該較高溫度與該較低溫度之間的變化而可選擇地將該等物體從該施體基材升起；及 一或多個致動器，其經組態以移動該施體基材及轉移基材中之一或兩者，以促使將該等物體從該施體基材升起。
  22. 如請求項21之系統，其中該固持層係由聚二甲基矽氧烷及矽氧凝膠中之至少一者製成，且具有1 µm至100 µm的厚度。
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