CN112864046B - 基于刚度变化可选择地保持和释放对象的转移元件 - Google Patents

基于刚度变化可选择地保持和释放对象的转移元件 Download PDF

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CN112864046B
CN112864046B CN202011167810.8A CN202011167810A CN112864046B CN 112864046 B CN112864046 B CN 112864046B CN 202011167810 A CN202011167810 A CN 202011167810A CN 112864046 B CN112864046 B CN 112864046B
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transfer
substrate
objects
temperature
transfer elements
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CN112864046A (zh
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王蕴达
吕正平
Q·王
N·E·昌
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Palo Alto Research Center Inc
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Palo Alto Research Center Inc
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Abstract

本发明题为“基于刚度变化可选择地保持和释放对象的转移元件”。本发明公开了一种转移元件，所述转移元件包括粘附元件，所述粘附元件在较低温度下具有较高杨氏模量并且在较高温度下具有较低杨氏模量。加热元件可操作以响应于输入而改变每个粘附元件的操作温度。控制器被耦接以向所述加热元件提供所述输入以引起至少在所述较高温度和所述较低温度之间的温度变化。所述温度变化致使所述转移元件响应于所述转移元件的所述较高杨氏模量和所述较低杨氏模量之间的变化而可选择性地保持对象和释放所述对象。

Description

基于刚度变化可选择地保持和释放对象的转移元件
技术领域
本公开涉及基于刚度变化可选择地保持和释放对象的转移元件。
背景技术
一般地，microLED显示器由形成各个转移元件的微观LED阵列制成。与常规LCD系统相比，OLED显示器和microLED显示器两者均大幅降低能耗需求。与OLED不同，microLED基于常规GaN LED技术，该技术提供的总亮度比OLED产生的更高，以及每单位功率发射的光效率更高。它也不受到OLED寿命较短的影响。
发明内容
本公开涉及具有可选择急剧刚性到柔软转变的可选择表面粘附元件。在一个实施方案中，设备包括具有两个或更多个转移元件的转移基底。每个转移元件包括在较低温度下具有较高杨氏模量并且在较高温度下具有较低杨氏模量的粘附元件。设备包括加热元件，该加热元件可操作以响应于输入而改变粘附元件的操作温度。控制器被耦接以向两个或更多个转移元件的加热元件提供输入以引起至少在较高温度和较低温度之间的温度变化。温度变化致使转移元件响应于转移元件的较高杨氏模量和较低杨氏模量之间的变化而可选择性地将对象保持到转移基底以及从转移基底释放对象。
在另一个实施方案中，一种方法涉及向转移基底上多个转移元件施加第一输入。多个转移元件中的每个转移元件在较低温度下具有较高杨氏模量并且在较高温度下具有较低杨氏模量。第一输入致使转移元件的子集处于或高于较高温度。致使转移元件在处于或高于较高温度下接触供体基底上的相应多个对象。在与多个对象接触的同时，将转移元件冷却至处于或低于较低温度。将转移基底从供体基底移开，对象的子集粘附到转移元件子集上并且与转移基底一起移动。致使转移基底上的对象接触目标基底，并且将对象的子集从转移基底转移到目标基底。
在另一个实施方案中，一种系统包括供体基底，该供体基底具有设置在保持层上的多个对象，该保持层包含聚二甲基硅氧烷和硅树脂凝胶中的一者或多者。转移基底具有两个或更多个转移元件。每个转移元件包括在较低温度下具有较高杨氏模量并且在较高温度下具有较低杨氏模量的粘附元件。每个转移元件具有加热元件，该加热元件可操作以响应于输入而改变粘附元件的操作温度。控制器被耦接以选择性向两个或更多个转移元件的加热元件提供输入，以致使转移元件的子集响应于至少在较高温度和较低温度之间的变化而可选择地从供体基底提起对象。系统包括一个或多个致动器，该一个或多个致动器被配置为移动供体基底和转移基底中的一者或两者以促进从供体基底提起对象。
根据以下详细论述和附图，可以了解各种实施方案的这些和其他特征和方面。
附图说明
下面的论述参考以下附图，其中同一附图标记可用于识别多个附图中的类似/相同部件。图未必按比例绘制。
图1和图2为示出根据示例实施方案的组装过程的框图；
图3为根据示例实施方案的设备的侧视图；
图4和图5为根据示例实施方案的用于转移基底的切换矩阵的示意图；
图6为根据示例实施方案的转移基底的侧视图；
图7和图8为根据各种示例实施方案的转移基底的侧视图；
图9A和图9B为根据示例实施方案的方法的图；并且
图10是示出根据示例实施方案的可转移对象上的突出部的图。
具体实施方式
本公开涉及对象的操纵和组装，并且在一些实施方案中，涉及经由转移基底的微对象的质量组装。一些电子器件通过将小对象机械地盖在彼此顶部来制造。虽然微电子部件和微光学部件有时使用晶片形成技术诸如层沉积、掩模和蚀刻来制造，但是某些类别的材料彼此生长不兼容。在此类情况下，组装可涉及在第一基底上形成一类器件，并且在第二基底上形成第二类器件，然后例如经由倒装芯片或转移印刷技术将它们机械地连接在一起。
本文所述的方面涉及一种系统，该系统能够将大量微对象(例如，颗粒、小芯片、mini-LED或micro-LED管芯)从供体基底并行转移到另一个基底，同时保持各个微对象的高位置配准。该系统允许从转移基底选择性转移微对象，并且将微对象选择性放置到目的地或目标基底。该系统可用于组装器件，诸如microLED显示器。
利用microLED的单个4K电视机具有然后需要组装的约2500万个小LED子像素。小芯片的质量转移是可用于microLED制造的一种技术。以高产率将microLED快速准确地转移到目标底板将是制造商为了使microLED成为可行的大规模市场产品而需要完善的技术之一。下面所述的技术可用于microLED制造，以及大量(通常)小对象需要同时移动的其他组装过程，和可能需要选择性将此类器件的子集移动到转移介质和/或从转移介质移动的其他组装过程。此类微对象可包括但不限于，油墨、预沉积金属膜、硅芯片、集成电路芯片、光刻胶、microLED管芯、微机电系统(MEMS)结构和任何其他预制造的微结构。
能够以任意图案选择性转移小芯片对于促进microLED显示器制造的有效转移工艺、像素修复、孔/空位再填充是有用的，这将导致高工艺产率。弹性体压模已用于确定性地转移用于这类应用的微型LED芯片。然而，弹性体压模具有固定的图案，并且不能转移小芯片的任意图案。不可避免地，小芯片的一些子集将是有缺陷的，因此使用此类压模替换其中一小部分变得困难。
在图1和图2中，框图示出了可使用根据示例实施方案的器件、系统和方法实现的组装过程的示例。在图1中，示出了供体晶片/基底100包括可能已生长或放置在基底100上的小芯片101的阵列。阵列101中的阴影小芯片已被识别为有缺陷的，并且当小芯片被转移到目标基底102时，仅转移小芯片阵列的子集101a，即没有阴影的良好小芯片。这可以用如图2所示的转移基底200(备注：原文错误，应为202)来实现，该转移基底一旦被识别，就可以选择性从供体基底100只拾取子集101a。如图2所示，转移基底202随后拾取小芯片的第二组200(例如，从不同的供体基底拾取)。小芯片在组200内的位置对应于有缺陷的小芯片在第一供体基底100上的位置。转移基底202将这个组200移动到目标基底102，从而导致操作小芯片的完整组201位于目标基底102上。
除了别的事物以外，本公开涉及具有转移元件(例如，转移像素)组的转移基底，该转移元件可选择性保持微对象的子集。因此，即使当所有转移元件与大于子集的微对象阵列接触时，也只有子集将被粘附和转移，并且子集外部的对象将被留下或以其他方式不受影响。类似地，转移基底可能够选择性释放当前附接到基底的微对象子集，以使得即使所有转移元件当前都保持微对象，也只有子集被转移到目标。这个过程是可重复并且可逆的，以使得不需要永久性粘结来影响对象的选择性保持或释放。
在图3中，侧视图示出了根据示例实施方案的设备300的细节。设备包括具有两个或更多个转移元件304的转移基底302。转移元件304可选择性制成改变刚度，刚度可被表示为制成元件的材料的杨氏模量。杨氏模量是处于线性弹性状态的材料中的应力(每单位面积的力)除以应变(成比例的变形)的量度。一般来讲，具有较高杨氏模量(针对应力σ存在较低应变)的材料比具有较低杨氏模量(针对相同σ存在较高应变)的材料更硬。也可使用其他度量来表示材料的刚度，诸如储能模量，其也是材料动态性能的考虑因素。一些度量可用于表示部件的刚度，诸如弹簧常数，其在功能上可等同于限定部件的性能。然而，刚度被限定，转移元件304具有响应于可用于如下所述的器件转移的温度的刚度变化。
每个转移元件304包括在较低温度下具有>6MPa的较高杨氏模量并且在较高温度下具有<1MPa的较低杨氏模量的粘附元件306。每个转移元件304还包括热元件308，该热元件308可操作以响应于输入(例如，经由输入310)而改变粘附元件306的温度。耦接控制器312以向热元件308提供输入310，从而致使转移元件304的子集可选择地拾取和保持对象314在转移基底302上并且(可选地)从转移基底302释放对象314。具体地，对象314将不在较低温度下粘着到转移元件304，而将在较高温度下粘着。为了增加粘附的可靠性，可在尝试将对象314拉离转移基底302之前冷却转移元件。
设备300可以是微转移系统的一部分，该微转移系统是用于将微对象(例如，1μm至1mm)从转移基底302转移到目标基底316的系统。粘附元件306可由包含丙烯酸硬脂基酯基(SA)的多聚合物形成。在这种情况下，较高温度和较低温度之间的差异可小于20℃(或在其他情况下小于50C℃)以便调整粘附元件306的粘着性，使得表面粘附力和杨氏模量中存在显著差异，例如，从较高温度下的<1MPa到较高温度下的>6MPa。这种系统中的控制器312可耦接到致动器，该致动器引起基底之间的相对运动以促进如本文所述的对象转移。
热元件308可包括加热元件和冷却元件中的一个或两个。输入310可包括电信号和/或激光。输入310可被配置(例如，使用矩阵电路)以使得走向控制器312的线比转移元件304的总数更少。转移元件304还可包括在粘附元件306与转移基底302之间的热绝缘体309。绝缘体309有助于防止热转移到基底302，从而减少影响粘附元件306处的温度变化所需的能量的量并且减少响应时间。
一般来讲，转移元件304形成中间转移表面，该中间转移表面的顺应性可作为温度的函数进行调节(例如，具有急剧的刚性到柔软转变)。此类表面可用于以受控和可选择的方式拾取和释放微对象组。每个转移元件304的横向尺寸W可从几微米至几百微米。每个转移元件304的总厚度T可从小于1微米至几百微米。转移阵列的节距可从几微米变化到几毫米。在一些实施方案中，热元件308和绝缘层309是彼此不物理隔离的连续层。因此，转移元件“像素”是加热/冷却元件可被单独寻址和控制的区域(参见图6)。基底302材料可包括但不限于玻璃、石英、硅、聚合物和碳化硅(SiC)。基底302的厚度范围可从几十微米至几毫米，而横向尺寸可从几毫米至一米。
注意，虽然图示实施方案示出了两个或更多个转移元件304，但是在一些情况下，可使用单个转移元件。例如，单个转移元件304可以是放置在机器人臂的端部处的操纵器的一部分。在此类配置中，单个转移元件304可用于拾取对象，而无需使用钳子、真空、磁性等。在其他配置中，可将一个或多个转移元件放置在钳子或其他保持附件的端部处以帮助握持而不必对被保持的对象施加过度的压力。与其他实施方案一样，热元件可在保持操作和释放操作期间增加粘附力的变化(对应于杨氏模量的变化)。
已研究了包括丙烯酸硬脂基酯(SA)的相变聚合物作为用于粘附元件的双稳态电活性聚合物(BSEP)。BSEP聚合物为低于其玻璃化转变温度(Tg)的刚性聚合物。高于Tg时，它变成表现出大的断裂伸长率和高的介电场强度的弹性体。电致动可在高于Tg的温度下执行，其中弹性BSEP用作介电弹性体。当将聚合物冷却至Tg以下时，变形锁定。当将聚合物重新加热至Tg以上时，形状变化可逆转。
已调查了基于丙烯酸硬脂基酯(丙烯酸十八酯，SA)的聚合物作为形状记忆聚合物，因为它们在硬脂基部分的结晶状态与熔融状态之间有急剧相变。硬脂基部分的结晶聚集体的突然的和可逆的相变导致在温度循环期间聚合物在刚性与弹性状态之间的快速转变。SA的转变通常低于50℃，其中窄相变温度范围小于20℃。因此，SA是赋予急剧的刚性到弹性转变的理想组分。已完成了一些初步实验以验证这一特性。
粘附元件306可由包括但不限于丙烯酸硬脂基酯(丙烯酸十八酯，SA)基聚合物、丙烯酸硬脂基酯和氨基甲酸酯二丙烯酸酯共聚物或其他类型聚合物的材料制成。具体地，已发现包含氨基甲酸酯二丙烯酸酯和SA的共聚物具有用于这些目的的期望特性。粘附元件306优选地具有急剧的刚性到柔软转变，因此粘附力可易于用温度变化来调节。热元件308可以是热电的加热/冷却元件、电阻加热器、二极管加热器、感应加热元件、光学加热元件等。热元件308可包括薄膜电阻器、二极管结构和/或高光能吸收效率材料，诸如炭黑、碳纳米管、工程纳米粒子等。热绝缘体309可由诸如聚酰亚胺、PDMS、聚对二甲苯、玻璃、氧化硅、AlxOy和SxNy的材料以及它们的组合制成。
在一个实施方案中，转移基底302包含有源电子部件阵列，并且热元件308可以以网格与它们互连。这在图4和图5中示意性示出。热元件(这些示例中的电阻器)的2D阵列可由如图4所示的二极管或如图5所示的晶体管控制。在图4所示的实施方案中，加热元件R1-R9由二极管D1-D9的矩阵控制。这可称为无源切换矩阵，该无源切换矩阵减少了将加热元件连接到控制器芯片所需的电线数。
在这种情况下，加热元件被逐行寻址。例如，R1可偏置到0V，同时R2和R3偏置到5V。C1、C2和C3偏置电压将确定加热元件R1、R2或R3是接通的(列偏置到5V)还是关断(列线偏置到0V)的。所有其他加热器由于二极管阻断电流而关闭。对所有剩余行重复过程，所选择行偏置到0V，而所有其他行偏置到5V。热元件的热时间常数将被设计成长于2D扫描的“帧速率”，以确保针对每个可寻址转移维持准恒定温度。
图5中的示意图示出了另一个电路，其中热元件由晶体管(例如，薄膜晶体管或TFT)而非二极管控制，这可称为“有源矩阵切换”。每个热元件具有连接到TFT中的一个TFT的漏极或源极的至少一个端部。使用晶体管的优点在于可实现更大的电压范围和更好的隔离。在这种情况下，所有未选择行将偏置到例如-5V，以关断晶体管。当选择行时，行线偏置到例如20V，以接通晶体管。偏置列线到特定电压使所选择行的对应加热元件能够加热到所需温度。类似于图4中的实施方案，将对剩余的其他行重复过程。
在图6中，侧视图示出了根据另一个示例实施方案的转移基底602。与图3中的实施方案一样，转移基底602具有两个或更多个转移元件604，每个转移元件包括具有随温度变化的表面粘附力的粘附元件606。每个转移元件604还包括热元件608，该热元件可操作以响应于输入而改变区域粘附元件606(例如，热元件608附近元件的一部分)的温度。在这个示例中，粘附元件604是覆盖不止一个转移元件604(在这种情况下，所有图示的元件604)的连续层的一部分。本文所述的任一个实施方案可使用由单层形成的粘附元件，该单层覆盖类似于图6所示的多个元件。
还注意到，这个实施方案示出了绝缘体609在转移元件604与基底602之间的使用，尽管此类绝缘体609可以是可选的。而且，如虚线所示，热元件608和绝缘体609中的一个或两个可实现为覆盖不止一个转移元件604的单层。在此类实施方案中，各个信号线(例如，图3中的线310和/或图7中的波导1112)可附接到热元件层608，以使得在限定各个转移元件608的尺寸和位置的区域内引起局部温度变化。
在图7中，侧视图示出了根据另一个示例实施方案的转移基底702。与图3中的实施方案一样，转移基底702具有两个或更多个转移元件704，每个转移元件包括具有随温度变化的表面粘附力的粘附元件706。每个转移元件704还包括热元件708，该热元件可操作以响应于输入而改变粘附元件706的温度。在这个示例中，热元件708由激光710激活，该激光经由基底702中的波导712递送。光从一个或多个激光器716提供，并且可经由光学切换元件714选择性激活转移元件704，该光学切换元件吸收或重定向来自未加热的转移元件的光。注意，可使用多个激光器716，每个转移元件多达一个，并且它们可集成在基底702中或安装在外部。光开关714可被电激活，并且可被布置成类似于图4和图5所示的二极管和晶体管的矩阵，以减少到控制器的线数。
在图8中，侧视图示出了根据另一个示例实施方案的转移基底802。与图3中的实施方案一样，转移基底802具有两个或更多个转移元件804，每个转移元件包括具有随温度变化的表面粘附力的粘附元件806。每个转移元件804还包括热元件808，该热元件可操作以响应于输入而改变粘附元件806的温度。每个转移元件804还包括绝缘体809，该绝缘体使热元件808与转移基底802热绝缘。
在这个实施方案中，转移基底802弯曲并且安装到相对于目标基底816旋转的辊813上。辊813和目标基底也相对于彼此线性地(在这个例示中水平地)移动，以使得一次仅转移元件804的子集(例如，单一元件804)接触转移基底816。转移元件804的子集被选择性激活以保持或释放对象814，以使得一些对象814被选择性转移到目标基底816。注意，左侧的阴影对象814未被转移到目标基底816。注意，辊813和基底802的另一部分可与供体基底(未示出)接触，以使得对象的转移可以是滚动转移过程，其中对象814从供体拾取并且转移到目标816。
辊813和基底802可同时或不同时接触供体基底和目标基底。在此类情况下，第二转移基底(未示出)可用于沉积丢弃的对象814，并且这个第二转移基底也可使用弯曲基底。本文所述的任一个其他实施方案可使用如图8所示的弯曲转移基底和滚动转移过程。如箭头820、821所指示，可通过使辊813旋转的旋转致动器820以及引起辊813和基底802之间的相对线性运动的线性致动器821来促进转移。
在图9A和图9B中，框图示出了根据示例实施方案的方法。在框900中，转移基底902被示出为具有转移元件904-907的阵列。转移基底902被示出为定位在供体基底908上方，以使得转移元件904-907的阵列在相应对象909-912上方对齐。如阴影化所指示，对象909、911形成对象909-912的子集，该子集旨在从供体基底908转移开。转移基底902朝向供体基底908移动，反之亦然。该移动可经由引起基底902、908之间的相对运动的一个或多个机械致动器901、903来实现。
如框916所示，当在转移元件904-907和对象909-912之间进行接触时，已将电输入施加到转移元件904、906的子集，如元件904、906的阴影所指示。输入致使子集中的每个转移元件904、906处于或高于高温(例如，介于30℃和65℃之间)，使得该子集中的每个转移元件904、906的粘附元件实现较低杨氏模量(例如，<1MPa)。这个输入可在转移元件904、906的子集接触对象909、911的相应子集之前或之后施加。对象909、911的子集被吸引到(例如，由于在较低杨氏模量下增加的范德华力)处于与较高温度范围相对应的较低杨氏模量的转移元件904、906的子集。致动器902、903可被配置为在该操作期间施加压力。
注意，不在转移元件904、906的子集中的其他转移元件905、907可等于或低于导致转移元件905、907具有较高杨氏模量(例如，>6MPa，并且在一些情况下，>10MPa)的较低温度(例如，介于0℃和30℃之间)。在该第二杨氏模量下，其他转移元件905、907将不会例如由于低范德华力而被吸引到相应对象910、912。注意，在框900所示的先前步骤中，转移元件904-907可处于任何温度下。
如框918所示，转移元件904、906的子集已被设置为等于或低于较低温度，同时仍与将从基底908转移的对象909、911的子集保持良好接触。已发现，这可增加转移元件904、906和对象909、911之间的吸引力。可通过向对象909、911添加面向转移元件904的从对象909、911的表面延伸的突出部来进一步增强该吸引。
如框919所示，通过致动器901、903中的一者或多者将转移基底902移出供体基底，从而致使对象909、911的子集与供体基底908分开，而其他对象910、912则保留在供体基底上。如图9B中的框920所示，转移基底902通过致动器921、923与目标基底922对齐并朝目标基底移动，该致动器可与图9A中的致动器901、903相同或不同。如框924所示，转移基底902上的对象909、911的子集接触目标基底922。
任选地，在框924、926中的一者或两者中，可将第二输入施加到转移元件904、906的子集，从而致使子集中的每个转移元件实现或超过较高温度。在对象909、911的子集和目标基底922之间可存在固有的或主动生成的吸引，使得对象909、911可在较高温度或较低温度下释放。例如，可从目标基底922施加反作用力，该反作用力包括但不限于粘附力、电力、磁力和真空产生的力。
如上所述，被转移对象可以包括在从供体基底移除时增加粘附力的结构。在图10中，图示出了根据示例性实施方案的对象1000-1002的特征。对象1000-1002被示为在相应基底1004-1006上。对象1000-1002中的每个对象各自具有在平坦表面1000b-1002b上方延伸的一个或多个相应突出部1000a-1002a。如图所示，突出部可包括柱、棱锥、梯形，并且可包括任何其他类型的突出结构，诸如钩环、凸块等。突出部1000a-1002a的最高点可处于平坦表面1000b-1002b上方的1μm和20μm之间。突出部1000a-1002a可由与对象1000-1002的材料相同或不同的材料制成，诸如硅、GaN、SiO2、SiN、金属、SU8、聚酰亚胺或其他聚合物。
基底1004-1006可以是具有被配置为暂时保持对象1000-1002的保持层1004a-1006a的供体基底。临时保持层1004A-1006A可包括弹性体材料，诸如聚二甲基硅氧烷(PDMS)、硅树脂凝胶等，并且可具有<2MPa的杨氏模量。层1004a-1006a的厚度可在1μm至100μm的范围内。
除非另有说明，否则本说明书和权利要求书中使用的表达特征尺寸、数量和物理特性的所有数字应被理解为在所有情况下均被术语“约”修饰。因此，除非另有说明，否则上述说明书和所附权利要求书中列出的数值参数为近似值，近似值可根据本领域技术人员利用本文所公开的教导所寻求获得的所需特性而变化。带端点的数值范围的使用包括该范围内的所有数字(例如，1至5包括1、1.5、2、2.75、3、3.80、4和5)以及该范围内的任何范围。
上述各种实施方案可使用交互以提供特定结果的电路、固件和/或软件模块来实现。本领域技术人员可使用本领域公知的知识易于实现此类所述的功能，无论是在模块化级别上还是在整体上。例如，本文所示的流程图和控制图可用于创建计算机可读指令/代码以供处理器执行。此类指令可存储在非暂态计算机可读介质上并且传输到处理器以用于执行，如本领域已知。以上所示的结构和程序仅为可用于提供上文所述功能的实施方案的代表性示例。
对示例实施方案的前述描述已经为了说明和描述的目的而呈现。并非旨在穷举或者将实施方案限制为所公开的精确形式。按照上述教导内容，许多修改形式和变型形式是可能的。所公开的实施方案的任何或所有特征可单独或者以任何组合应用，并不意味着是限制性的，而是纯粹说明性的。本发明的范围旨在不受这个具体实施方式的限制，而是由本文所附的权利要求确定。

Claims (18)

1.一种用于转移元件的设备，所述设备包括：
转移基底，所述转移基底包括第一多个转移元件，每个所述第一多个转移元件包括：
粘附元件，所述粘附元件在较低温度下具有较高杨氏模量并且在较高温度下具有较低杨氏模量，其中，所述粘附元件包括丙烯酸硬脂基酯；
加热元件，所述加热元件可操作以响应于输入而改变所述粘附元件的操作温度；以及
控制器，所述控制器被耦接以向所述第一多个转移元件的每个加热元件提供所述输入以引起至少在所述较高温度和所述较低温度之间的温度变化，所述温度变化致使所述第一多个转移元件响应于所述第一多个转移元件的所述较高杨氏模量和所述较低杨氏模量之间的变化而可选择性地将第一多个对象保持到所述转移基底以及从所述转移基底释放第一多个对象，其中，所述第一多个转移元件对所述第一多个对象的可选择性保持和释放是可重复并且可逆的；
所述转移基底还包括第二多个转移元件，并且所述设备被配置为致使所述第二多个转移元件接触供体基底上的第二多个对象，同时所述第二多个转移元件低于所述较高温度，使得所述第二多个对象不粘附到所述转移基底并且不与所述转移基底一起移动，
其中所述对象包括GaN微发光二极管(LED)芯片，所述GaN微LED芯片具有面向所述转移基底的平坦表面，并且其中所述GaN微LED芯片包括在所述平坦表面上方延伸的突出部。
2.根据权利要求1所述的设备，其中所述转移基底包括玻璃和碳化硅中的一者或多者。
3.根据权利要求1所述的设备，其中所述对象包括亚毫米电子器件。
4.根据权利要求1所述的设备，其中所述粘附元件由包含氨基甲酸酯二丙烯酸酯和丙烯酸硬脂基酯的共聚物形成。
5.根据权利要求1所述的设备，其中所述加热元件包括电阻加热元件。
6.根据权利要求1所述的设备，所述设备还包括多个有源电子部件，所述多个有源电子部件耦接到所述控制器并且被配置为独立地激活所述加热元件中的相应加热元件。
7.根据权利要求6所述的设备，其中所述有源电子部件包括二极管，每个加热元件具有连接到所述二极管中的一者的至少一个端部。
8.根据权利要求6所述的设备，其中所述有源电子部件包括薄膜晶体管，每个加热元件具有连接到所述薄膜晶体管中的一个薄膜晶体管的漏极或源极的至少一个端部。
9.根据权利要求1所述的设备，其中所述突出部的最高点处于所述平坦表面上方的1um和20um之间。
10.根据权利要求1所述的设备，其中所述突出部由硅、GaN、SiO2、SiN、金属、SU8、聚酰亚胺或其他聚合物中的至少一者制成。
11.一种用于转移元件的方法，所述方法包括：
向转移基底上的第一多个转移元件施加第一输入，所述第一多个转移元件中的每一个转移元件在较低温度下具有较高杨氏模量并且在较高温度下具有较低杨氏模量，所述第一输入致使所述第一多个转移元件处于或高于所述较高温度，其中，所述第一多个转移元件由丙烯酸硬脂基酯形成；
致使所述第一多个转移元件在处于或高于所述较高温度下接触供体基底上的相应第一多个对象；
在与所述第一多个对象接触的同时将所述第一多个转移元件冷却至处于或低于所述较低温度，从而致使所述第一多个转移元件保持所述相应第一多个对象；
移动所述供体基底和所述转移基底中的一者或二者以促进从所述供体基底提起所述第一多个对象；
致使所述转移基底上的所述第一多个对象接触目标基底；以及
将所述第一多个转移元件加热到所述较高温度以释放所述第一多个对象并且将所述第一多个对象从所述转移基底转移到所述目标基底，其中，所述第一多个转移元件对所述第一多个对象的保持和释放是可重复并且可逆的，
致使所述转移基底上的第二多个转移元件接触所述供体基底上的第二多个对象，同时所述第二多个转移元件低于所述较高温度，使得所述第二多个对象不粘附到所述转移基底并且不与所述转移基底一起移动，
其中所述对象包括GaN微发光二极管(LED)芯片，所述GaN微LED芯片具有面向所述转移基底的平坦表面，并且其中所述GaN微LED芯片包括在所述平坦表面上方延伸的一个或多个突出部。
12.根据权利要求11所述的方法，其中所述较高温度介于30℃和65℃之间，并且所述较低温度介于0℃和30℃之间，所述较高温度和所述较低温度与较高杨氏模量和较低杨氏模量之间的相变温度范围相关联，所述相变温度范围小于20℃。
13.根据权利要求11所述的方法，其中所述突出部的最高点处于所述平坦表面上方的1um和20um之间。
14.根据权利要求13所述的方法，其中所述突出部由硅、GaN、SiO2、SiN、金属、SU8、聚酰亚胺或其他聚合物中的至少一者制成。
15.一种用于转移元件的设备，包括：
转移基底，所述转移基底包括第一多个转移元件，每个所述第一多个转移元件包括：
粘附元件，所述粘附元件在较低温度下具有较高杨氏模量并且在较高温度下具有较低杨氏模量，在所述较低温度和所述较高温度之间的转变发生在50℃以下，并且与所述较高温度和所述较低温度相关联的相变温度范围小于20℃；以及
加热元件，所述加热元件可操作以响应于输入而改变所述粘附元件的操作温度；
控制器，所述控制器被耦接以选择性向所述第一多个转移元件的所述加热元件提供所述输入，以致使所述第一多个转移元件响应于至少在所述较高温度和所述较低温度之间的变化而可选择地从供体基底保持和提起第一多个对象；
一个或多个致动器，所述一个或多个致动器被配置为移动所述供体基底和所述转移基底中的一者或两者以促进从所述供体基底提起所述第一多个对象并且致使所述转移基底上的第一多个对象接触目标基底；以及
所述控制器将所述第一多个转移元件加热到所述较高温度以释放第一多个对象并且将第一多个对象从所述转移基底转移到所述目标基底，其中，所述第一多个转移元件对第一多个对象的可选择性保持和释放是可重复并且可逆的；
所述转移基底还包括第二多个转移元件，并且所述设备被配置为致使所述第二多个转移元件接触所述供体基底上的第二多个对象，同时所述第二多个转移元件低于所述较高温度，使得所述第二多个对象不粘附到所述转移基底并且不与所述转移基底一起移动，
其中所述对象包括GaN微发光二极管(LED)芯片，所述GaN微LED芯片具有面向所述转移基底的平坦表面，并且其中所述GaN微LED芯片包括在所述平坦表面上方延伸的一个或多个突出部。
16.根据权利要求15所述的设备，其中，对象设置在保持层上，所述保持层包括杨氏模量<2MPa的一种或多种材料，其中，所述保持层由聚二甲基硅氧烷和硅树脂凝胶中的至少一者制成并且具有1μm至100μm的厚度。
17.根据权利要求15所述的设备，其中所述较高杨氏模量在所述较低温度下为>6MPa并且所述较低杨氏模量在所述较高温度下为<1MPa。
18.根据权利要求15所述的设备，其中所述粘附元件由包含氨基甲酸酯二丙烯酸酯、丙烯酸硬脂基酯、聚(降冰片烯)、聚(氨基甲酸酯)和聚(苯乙烯-丁二烯)中的至少一者的共聚物形成。
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